NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. , groups, C and D, according to its DC current gain. As complementary type the PNP transistor HN 8550 is , owned subsidiary of HQNEV TECHNOLOGY LTD. ) HN 8050 Characteristics at Tamb = 25 °C Symbol Min. Typ. , 50 mA VBEsat - - 1.2 V Collector Emitter Breakdown Voltage at lc = 2 mA V(BR)CEO 25 - - V Collector Base Breakdown Voltage at lc = 10 nA V(BR)CBO 40 - - V Emitter Base Breakdown Voltage at lE = 100 nA V ... | OCR Scan |
5 pages, |
8050 transistor D 8050 S 8050 transistor 8050 d npn 8050 transistor S 8050 8050D 8050c transistor b 8050 S 8050 transistor NPN transistor 8050d NPN transistor 8050 C 8050 d TRANSISTOR c 8050 datasheet abstract |
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| Abstract: HN 8050 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. , groups, C and D, according to its DC current gain. As complementary type the PNP transistor HN 8550 is , HQNEV TECHNOLOGY LTD. ) HN 8050 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit DC , 1.2 V Collector Emitter Breakdown Voltage at le = 2 mA V(BR)CEO 25 - - V Collector Base Breakdown Voltage at le = 10 nA V(BR)CB0 40 - - V Emitter Base Breakdown Voltage at lE = 100 nA V(BR)EBO 6 - - V ... | OCR Scan |
5 pages, |
C 8050 d TRANSISTOR c 8050 8050 d h 8050 transistor 8050 transistor br 8050 NPN transistor 8050d s 8550 transistors NPN transistor 8050 8050 pnp transistor transistor S 8050 8050 TRANSISTOR PNP hFE 8050 datasheet abstract |
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| Abstract: ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ST 8050 (1.5A , 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - - ... | Original |
2 pages, |
npn 8050 8050d transistor st 8050C 8550 pnp transistor he 8050d transistor 8050c BR 8550 D br 8550 NPN Transistor 8050 TRANSISTOR PNP 8550 NPN Transistor BR 8050 transistor 8050d 8050C datasheet abstract |
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| Abstract: ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. , two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , ST 8050 (1.5A) Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 45 , V VBE(sat) - 0.98 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - - V VBE - 0.66 1 V fT 120 200 - MHz ... | Original |
2 pages, |
BR 8550 TRANSISTOR 8050D st 8050d s 8550 transistors S 8050 transistor s 8050 d 8550 NPN Transistor BR 8050c 8050 pnp transistor D 8050 he 8050d transistor S 8050 BR 8050D datasheet abstract |
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| Abstract: ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 07/12/2002 ST 8050 (1.5A) Characteristics , 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - - ... | Original |
2 pages, |
npn 8050 NPN transistor 8050 8050-C BR 8550 D 8550 NPN Transistor 8050d transistor 8050c transistor br 8550 c he 8050d transistor 8050 d ic 8050 BR 8050D 8050d datasheet abstract |
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| Abstract: ST 8050 (2A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , Hong Kong Stock Exchange, Stock Code: 724) R Dated : 05/01/2005 ST 8050 (2A) Characteristics , 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - - ... | Original |
2 pages, |
br 8550 NPN Transistor transistor br 8050 BR 8050D 8050d transistor NPN transistor 8050 8550 NPN Transistor BR 8550 D 8050c transistor transistor 8550 he 8050d 8050d 8050c 8050 pnp transistor datasheet abstract |
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| Abstract: ST 8050 (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. , two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , ST 8050 (1.5A) Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 45 , V VBE(sat) - 0.98 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - - V VBE - 0.66 1 V fT 120 200 - MHz ... | Original |
2 pages, |
BR 8550 BR 8550 D s 8550 d st 8050 transistor 8050 d BR 8050D 8050d br 8550 NPN Transistor 8550 NPN Transistor 8050 TRANSISTOR PNP transistor br 8050 transistor S 8050 BR 8050 8050c transistor datasheet abstract |
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| Abstract: ST 8050 (2A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor ST , the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 05/01/2005 ST 8050 (2A , 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - - ... | Original |
2 pages, |
8550 transistor 8050 npn br 8550 NPN Transistor 8050 TRANSISTOR PNP 8050 pnp transistor 8550 NPN Transistor BR 8550 ic st 8050 npn 8050 NPN transistor 8050 transistor 8550 8050c 8050d datasheet abstract |
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| Abstract: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. , four groups, B, C, D and E, according to its DC current gain. As complementary type the PNP , ST 8050 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit ST 8050B 8050B hFE , nA VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - - V fT - 100 - MHz ... | Original |
5 pages, |
8050c transistor 8050c he 8050d NPN transistor 8050 npn 8050 8050e 8050 npn BR 8050 D 8050d transistor 8050d NPN transistor 8050d transistor b 8050 BR 8050 st 8050 datasheet abstract |
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| Abstract: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. , four groups, B, C, D and E, according to its DC current gain. As complementary type the PNP , ) Dated : 01/09/2003 ST 8050 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit , - - 100 nA VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V V(BR)CEO 25 - - V V(BR)CBO 40 - - V V(BR)EBO 6 - - V fT - 100 ... | Original |
5 pages, |
NPN 8550 NPN transistor 8050 8050 D transistor br 8050 transistor b 8050 8550 NPN Transistor 8550 pnp transistor npn 8050 8050c st 8050C 8050 pnp transistor 8050B BR 8050 D datasheet abstract |
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| _SMP80_50VTT NPN * .model npn_smp80_50vtt npn + IS=0.74E-16 74E-16 74E-16 74E-16 BF=15 BR=2 TF=0.3E-9 TR=0.5E-9 vaf=80 var=30 $+ IS=0.8E-16 8E-16 8E-16 8E-16 BF=15 BR=2 TF=1E-10 1E-10 1E-10 1E-10 TR=1.5E-10 5E-10 5E-10 5E-10 vaf=80 var=30 $saram $ * N+ resistor .model rx_smp80_50vtt r $ res=600 tc1r=1.5882063m tc2r=8.754806e-07 w=30u l=300u + tc1r=1.5882063m tc2r=8.754806e-07 $ * P+ resistor .model rr_smp80_50vtt r $ res=1200 tc www.datasheetarchive.com/download/5879599-140031ZC/wcd00d28.tar |
IDT | 27/12/1999 | 80 Kb | TAR | wcd00d28.tar |
| _SMP80_50VTT NPN * .model npn_smp80_50vtt npn + IS=0.74E-16 74E-16 74E-16 74E-16 BF=15 BR=2 TF=0.3E-9 TR=0.5E-9 vaf=80 var=30 $+ IS=0.8E-16 8E-16 8E-16 8E-16 BF=15 BR=2 TF=1E-10 1E-10 1E-10 1E-10 TR=1.5E-10 5E-10 5E-10 5E-10 vaf=80 var=30 $saram $ * N+ resistor .model rx_smp80_50vtt r $ res=600 tc1r=1.5882063m tc2r=8.754806e-07 w=30u l=300u + tc1r=1.5882063m tc2r=8.754806e-07 $ * P+ resistor .model rr_smp80_50vtt r $ res=1200 tc www.datasheetarchive.com/download/4218555-140204ZC/wcd00d97.tar |
IDT | 27/12/1999 | 120 Kb | TAR | wcd00d97.tar |
| * .SUBCKT PSS8050D 1 2 3 * * housing parasitics LBlead 2 22 9E-010 9E-010 9E-010 9E-010 LE 3 333 2.3E-009 3E-009 3E-009 3E-009 LC 1 11 1.7E-012 7E-012 7E-012 7E-012 LBbond 22 222 9E-010 9E-010 9E-010 9E-010 CBCG 222 11 3.53E-013 53E-013 53E-013 53E-013 CBEG 222 333 1.81E-013 81E-013 81E-013 81E-013 CCEG 11 333 2 reverse * mode of operation. * Q1 11 222 333 PSS8050D D1 222 11 DIODE * .MODEL PSS8050D NPN + IS = 74 + NR = 0.9841 + ISC = 1E-013 1E-013 1E-013 1E-013 + NC = 1.741 + BR = 48 + IKR = 2.5 + VAR = 63 + RB = 10 + VJS = 0.75 + MJS = 0.333 + FC = 0.78 .MODEL DIODE D + IS = 4.666E-015 666E-015 666E-015 666E-015 + N = 1 + BV = 1000 www.datasheetarchive.com/files/spicemodels/misc/models/philips_smallsignaltransistors/pss8050d.prm |
Spice Models | 26/11/2003 | 1.13 Kb | PRM | pss8050d.prm |
| JAN1N6170A JAN1N6170A JAN1N6170A JAN1N6170A (#8050) Transient Voltage Suppressor Division Santa Ana Datasheet SA4-13 SA4-13 SA4-13 SA4-13.PDF Mil-Spec MIL-PRF-19500/516 MIL-PRF-19500/516 MIL-PRF-19500/516 MIL-PRF-19500/516 Prod BR =8 uA) V BR 142.5 V Reverse Leakage Current (Vwm=114 V) I D www.datasheetarchive.com/files/microsemi/products/8050-v1.htm |
Microsemi | 08/12/1999 | 8.82 Kb | HTM | 8050-v1.htm |
| reverse * mode of operation. * Q1 11 222 333 PSS8050C D1 222 11 DIODE * .MODEL PSS8050C NPN + IS * .SUBCKT PSS8050C 1 2 3 * * housing parasitics LBlead 2 22 9E-010 9E-010 9E-010 9E-010 LE 3 333 2.3E-009 3E-009 3E-009 3E-009 LC 1 11 1.7E-012 7E-012 7E-012 7E-012 LBbond 22 222 9E-010 9E-010 9E-010 9E-010 CBCG 222 11 3.53E-013 53E-013 53E-013 53E-013 CBEG 222 333 1.81E-013 81E-013 81E-013 81E-013 CCEG 11 333 2 = 74 + NR = 0.9886 + ISC = 1E-013 1E-013 1E-013 1E-013 + NC = 1.741 + BR = 46 + IKR = 3 + VAR = 63 + RB = 9 + VJS = 0.75 + MJS = 0.333 + FC = 0.78 .MODEL DIODE D + IS = 5.5E-015 5E-015 5E-015 5E-015 + N = 1 + BV = 1000 www.datasheetarchive.com/files/spicemodels/misc/models/philips_smallsignaltransistors/pss8050c.prm |
Spice Models | 26/11/2003 | 1.12 Kb | PRM | pss8050c.prm |
| -11-548-5366 chimura@hastec.com.br vagner@hastec.com.br Canada Har Scantec GmbH Behringstrasse 10 D-82152 Planegg, Germany (089) 859 ://www.scantec.de Germany, Scantec GmbH Eulenrain 4 D-73230 Kircheim, Germany (49) 7021 , Scantec GmbH Fliedersteig 28 D-90607 Rueckersdorf, Germany 49 -3211 bsicts@unitel.co.kr Malaysia Serial System (M) SDN BHD 253-D www.datasheetarchive.com/files/scantec/simtek/simtekinternationaldist.htm |
Scantec | 11/05/1998 | 31.24 Kb | HTM | simtekinternationaldist.htm |
| /3 Freq. MHz Power Output dBm Tuning Voltage V Phase Noise dBc/Hz SSB at offset frequencies: Typ. Pulling MHz pk-pk @ 12 dBr Pushing MHz/V Tuning Sensitivity MHz/V Harmonics dBc 3dB Modulation . A B C D E Tuning Characteristics MHz/V Power Output dBm Harmonics Suppression www.datasheetarchive.com/files/mini-circuits/html2/jtos-ed6281-3.htm |
Mini-Circuits | 18/02/2002 | 46.49 Kb | HTM | jtos-ed6281-3.htm |
| /D BFR96/D BFS17LT1/D BFW92A/D BFX89/D BR101/D BR107/D BR1100/D BR1101/D BR1104/D BR1105/D BR1107/D BR1108/D BR1109/D BR1111/D BR1112/D BR1114/D BR1115/D BR1116/D BR1118/D BR1119/D BR1125/D BR1126/D BR1128/D BR1130/D BR1131/D BR1132/D BR1133/D BR1134/D BR1136/D www.datasheetarchive.com/files/motorola/design-n/lit/ldc_inv.htm |
Motorola | 25/11/1996 | 72.96 Kb | HTM | ldc_inv.htm |
| ,> 4LR25-X 4LR25-X www.datasheetarchive.com/files/duracell/amipro/docs/designer/pc908s.sam |
Duracell | 25/10/1996 | 782.76 Kb | SAM | pc908s.sam |
| www.datasheetarchive.com/files/duracell/amipro/docs/designer/pc915s.sam |
Duracell | 26/07/1994 | 483.13 Kb | SAM | pc915s.sam |