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Part Manufacturer Description Datasheet BUY
130098 TE Connectivity Ltd TERM PLASTI-GRIP visit Digikey
130090 TE Connectivity (130090) PIDG RING TONGUE visit TE Connectivity
130094 TE Connectivity (130094) PIDG RING visit TE Connectivity
1413009-9 TE Connectivity (1413009-9) V23086C2001A403 visit TE Connectivity

BR 13009

Catalog Datasheet MFG & Type PDF Document Tags

D 13009 K

Abstract: e 13009 f ^ OOO'îbMT 0 TE 13008 TE 13009 Silicon NPN Power Transistors Applications: Switching mode power supply , thermal resistance Junction case TE 13008 TE 13009 Collector-emitter voltage ^ceo 300 400 V ^ces 600 , K/W T1.2/1999.0888 E 2786 Câ'"09 265 TELEFUNKEN ELECTRONIC TE 13008 â'¢ TE 13009 17E D , cut-off current 850 V TE 13008 VCE= 1000 V TE 13009 VCE = 1000 V TE 13009 Collector-emitter breakdown voltage /c = 0.5A,ix=125mH TE 13008 TE 13009 Emitter-base breakdown voltage /E«1 mA Collector-emitter
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SR 13009

Abstract: E 13009 ' C Ic = 0.5 A; L = 125 mH; Imeasure = 100 mA V CE Type T E 13008 T E 13009 TE 13008 TE 13009 TE 13008 T E 13009 Symbol ·c e s ces Ic e s ICES V(BRICEO V(BR)CEO V(BR)EBO Min iy p Max 0.5 , Collector-emitter voltage Test Conditions Type T E 13008 TE 13009 T E 13008 TE 13009 Symbol VcEO VcEO VCES VcES V
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NEOREC30UX

Abstract: MIL202F-106E (2/31) (BH)max 49MGOe58 7.4g/cm3 10%(VCM) MRI SmNd (BH)max Br HCJ Br HCJ C// (0100°C) C (0100°C) 25kOe NdFe NdFeB , Nd1.1Fe4B4 Nd2O3 Nd2C3 NEOREC % B-rich (%) Br (kG) 38's 84 , ­H 0 ­5 500 250 0 Br HCB HCJ (BH)max [mT] (kG) [kA/m] (kOe) [kA/m , ] ­15 1500 1250 ­10 1000 750 ­H 0 ­5 500 250 0 Br HCB HCJ (BH
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diode D45C

Abstract: JE 800 transistor 80 It lhfel @ 1 MHz, ## Darlington (continued) * V(BR)CEV â' Switching tests performed w , * 16/36 2 300 MJE13008 6/30 8 3 400 M JE 13009 6/30 8 50 typ 50
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diode D45C JE 800 transistor L146 IC BD800 340B-03 JF16006A JF10012 JF16212 JF16018 JF16206

HCJ crystal

Abstract: crystal HCJ . 1 Features/Applications . 2 Br , Magnetic characteristics Maximum energy product (BH)max Residual flux density Br Intrinsic coercive force HCJ Recoil permeability Reversible temperature coefficient of Br Temperature coefficient of HCJ , . 002-02 / 20100523 / e331.fm (3/33) Br/HCJ CHARACTERISTICS DISTRIBUTION [T] ( kG) 1.5 15 , 34SH 30EV Residual flux density Br 30UX 32A 1.1 31UH 32AH 30 27UX 11 26 24
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HCJ crystal crystal HCJ NEOREC46HF crystal hcj 30 NEOREC45SH motor 42SH 2002/95/EC NEOREC53B NEOREC50H NEOREC52A NEOREC50B NEOREC50F

crystal HCJ

Abstract: HCJ crystal . 1 Features/Applications . 2 Br , Magnetic characteristics Maximum energy product (BH)max Residual flux density Br Intrinsic coercive force HCJ Recoil permeability Reversible temperature coefficient of Br Temperature coefficient of HCJ , . 001-02 / 20081209 / e331.fm (3/31) Br/HCJ CHARACTERISTICS DISTRIBUTION OF NEOREC MAGNETS [mT , Residual flux density Br 27UX 26 26A 1000 10 24 22 REC(Sm-Co) 18 Transverse
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si 13003 br optical pickup unit power supply for magnetron iron bh curve hdd motor hitachi hitachi optical pickup NEOREC47B NEOREC45F NEOREC27UX

cce 7100

Abstract: 85500 transistor 0.831 0.998 1.118 1.253 21.800 15.831 13.009 12.063 10.534 9.326 8.624 5.724 3.601 , Parameter time capacitance inductance resistance voltage current 0 ISE UNITS 2e-12 BR , UNITS 2.0e-12 BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4 ITF 0.011 , NE 2.19 TF 2e-12 BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4 ITF , TF 2e-12 BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4 ITF 0.011
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NE685 NE68518 2SC5015 NE68519 2SC5010 NE68530 cce 7100 85500 transistor 2SC4955 cce 7100 1027 2SC4959

cce 7100

Abstract: 85500 transistor 0.108 0.172 0.347 0.440 0.634 0.831 0.998 1.118 1.253 21.800 15.831 13.009 12.063 10.534 , resistance voltage current 0 ISE UNITS 2e-12 BR 1 XTF 5.2 NR 1.08 VTF , inductance resistance voltage current 0 ISE UNITS 2.0e-12 BR 1 XTF 5.2 NR , volts ISE 7.9e-13 FC 0.5 current amps NE 2.19 TF 2e-12 BR 1 XTF , 7.9e-13 FC 0.5 NE 2.19 TF 2e-12 BR 1 XTF 5.2 NR 1.08 VTF 4.58
NEC
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NE68533 cce 7100 0913 br 8764 transistor d 13009 539r P 13009 0803 BF109 NE68539/39R 2SC4957 NE68518-T1 NE68519-T1 NE68530-T1

HE 85500

Abstract: st 85500 0.610 0.789 0.944 1.102 1.207 21.800 15.831 13.009 12.063 10.534 9.326 8.624 5.724 3.601 22.844 , BJT NONLINEAR MODEL PARAMETERS 0 ) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM , BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7.0e-16 109 1 15 , PARAMETERS < 1 > Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC , NONLINEAR MODEL SCHEMATIC BJT NONLINEAR MODEL PARAMETERS < 1 > Parameters IS BF NF VAF IKF ISE NE BR
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HE 85500 st 85500 EN 123400 ha 14052 HE 85500 TRANSISTOR bf 0252 NE68533-T1 NE68539-T1 NE68539R-T1

014e1

Abstract: cce 7100 0.831 0.998 1.118 1.253 0.103 0.174 0.345 0.419 0.610 0.789 0.944 1.102 1.207 21.800 15.831 13.009 , VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 109 1 15 0.19 , Collector BJT NONLINEAR MODEL PARAMETERS < 1) Parameters IS BF NF VA F IKF ISE NE BR NR VAR IKR ISC NC , ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 109 1 15 0.19 7.9e-13 2.19 1 , MODEL PARAMETERS < 1 > Parameters IS BF NF VA F IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE
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014e1 CD 5888 cb ic transistor j 13009 CD 5888 CB E68530-T1

cce 7100

Abstract: 85500 transistor 21.800 15.831 13.009 12.063 10.534 9.326 8.624 5.724 3.601 3.465 3.301 2.949 2.743 2.275 , resistance voltage current 0 ISE UNITS 2e-12 BR 1 XTF 5.2 NR 1.08 VTF , inductance resistance voltage current 0 ISE UNITS 2.0e-12 BR 1 XTF 5.2 NR , ISE 7.9e-13 FC 0.5 current amps NE 2.19 TF 2e-12 BR 1 XTF 5.2 , amps NE 2.19 TF 2e-12 BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4
NEC
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tr 13009 0-834-10 BJT BF 167 BJT IC Vce

85500 transistor

Abstract: NPN Transistor 13009 17.827 12.151 9.237 8.325 7.042 6.200 5.757 3.431 21.800 15.831 13.009 12.063 10.534 9.326 8.624 5.724 , CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR , ) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7.0e-16 109 1 , ) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 109 1 , BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM
California Eastern Laboratories
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NPN Transistor 13009 transistor MJE 13009 k 13009 transistor E 13009 c 5929 transistor BR 13009 8539R NE68518-T1-A NE68519-T1-A NE68530-T1-A NE68533-T1-A NE68539-T1-A

cce 7100

Abstract: transistor d 13009 0.108 0.172 0.347 0.440 0.634 0.831 0.998 1.118 1.253 21.800 15.831 13.009 12.063 10.534 , ohms volts amps 0.5 NE UNITS 2e-12 BR 1 XTF 5.2 NR 1.08 VTF 4.58 , inductance resistance voltage current 0 ISE UNITS 2.0e-12 BR 1 XTF 5.2 NR , volts ISE 7.9e-13 FC 0.5 current amps NE 2.19 TF 2e-12 BR 1 XTF , 7.9e-13 FC 0.5 NE 2.19 TF 2e-12 BR 1 XTF 5.2 NR 1.08 VTF 4.58
California Eastern Laboratories
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BJT BF 331 TRANSISTOR Bf 522
Abstract: MHz, FIN2 = 46.09 MHz, -7 dBFS each tone FIN1 = 130.09 MHz, FIN2 = 125.09 MHz, -7 dBFS each tone 30 , ) INTERMODULATION DISTORTION (IMD) vs FREQUENCY 0 -20 FIN1 = 130.09 MHz, -7 dBFS, FIN2 = 125.09 MHz, -7 dBFS, 2 Texas Instruments
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ADS5545 SLWS180B 14-BIT 70-MH 48-QFN 170-MSPS
Abstract: recovery time PSRR FIN1 = 134.99 MHz, FIN2 = 130.09 MHz, -7 dBFS each tone Recovery to 1% (of final Texas Instruments
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ADS5525 SLWS191A 12-BIT
Abstract: FIN1 = 134.99 MHz, FIN2 = 130.09 MHz, -7 dBFS each tone 30 MHz, 200 mVPP signal on 3.3-V supply , ) INTERMODULATION DISTORTION (IMD) vs FREQUENCY 0 -20 fIN1 = 134.99 MHz, -7 dBFS, fIN2 = 130.09 MHz, -7 dBFS, 2 Texas Instruments
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SLWS191B
Abstract: 3.3-V supply 35 dBc Voltage overload recovery time PSRR FIN1 = 130.09 MHz, FIN2 = Texas Instruments
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SLWS180C

ADS5545

Abstract: ADS5545IRGZR recovery time PSRR FIN1 = 130.09 MHz, FIN2 = 125.09 MHz, -7 dBFS each tone Recovery to 1% (of final
Texas Instruments
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ADS5545IRGZR ADS5545IRGZT AZ5545 QFN-48
Abstract: MHz, FIN2 = 46.09 MHz, -7 dBFS each tone FIN1 = 134.99 MHz, FIN2 = 130.09 MHz, -7 dBFS each tone 30 , FREQUENCY 0 -20 fIN1 = 134.99 MHz, -7 dBFS, fIN2 = 130.09 MHz, -7 dBFS, 2-Tone IMD, 90 dBFS SFDR vs Texas Instruments
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Abstract: MHz, FIN2 = 46.09 MHz, -7 dBFS each tone FIN1 = 134.99 MHz, FIN2 = 130.09 MHz, -7 dBFS each tone 30 , FREQUENCY 0 -20 fIN1 = 134.99 MHz, -7 dBFS, fIN2 = 130.09 MHz, -7 dBFS, 2-Tone IMD, 90 dBFS SFDR vs Texas Instruments
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