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BR 13003

Catalog Datasheet MFG & Type PDF Document Tags

HF 13003

Abstract: 13003 Ã^SOQSb ODOSb'S? 1 TE 13002 TE 13003 Silicon NPN Power Transistors Applications: Switching mode power , 'CM â'¢to TE 13002 300 600 TE 13003 400 700 9 1,5 3 0.75 0.75 38 150 -65.+150 3.3 V V , - â'" TELEFUNKEN ELECTRONIC 17E D â  OOOIbSA TE 13002 â'¢ TE 13003 ~ T-33-11 Characteristics ,   VCE = 700 V TE 13003 T . = 150°C, Vr. = 600 V TE 13002 C4S0 Lc â'¢ VCE = 700 V TE 13003 Collector-emitter breakdown voltage /c= 100 mA, Lc = 125 mH TE 13002 Fig. 1,2 TE 13003 Emitter-base breakdown
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HF 13003 13003 electronic ballast 13003 13002 sw 13003 LB 13002 OQDU33

transistor 13002

Abstract: 13003 TRANSISTOR 13003 Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 , hFE 10 - 70 V(BR)CBO 600 - - V V(BR)CEO 400 - - V V(BR)EBO , at VCE=10V, IC=100mA Collector Base Breakdown Voltage at IC=1mA 13002 at IC=5mA 13003 , Current at VCB=600V 13002 at VCB=700V 13003 Emitter Cutoff Current at VEB=9V Collector Emitter Saturation Voltage at IC=0.1A, IB=20mA 13003 VCE(sat) - - 0.4 V at IC
Semtech Electronics
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SD13002 transistor 13002 13003 TRANSISTOR 13002 TRANSISTOR transistor 13003 13002 and 13003 power transistor BR 13003 SD13003

13002

Abstract: 13003 13003 Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 , Min. Typ. Max. Unit hFE 10 - 70 V(BR)CBO 600 - - V V(BR)CEO 400 - - V V(BR)EBO 9 - - V ICBO - - 100 nA IEBO - - , =1mA 13002 at IC=5mA 13003 Collector Emitter Breakdown Voltage at IC=5mA Emitter Base Breakdown Voltage at IE=1mA Collector Cutoff Current at VCB=600V 13002 at VCB=700V 13003 Emitter
Semtech Electronics
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transistor 13003 A c s 13003 TRANSISTOR transistors 13003 NPN Transistor 600V 13003 npn 13003 TRANSISTOR npn

13002 TRANSISTOR

Abstract: transistor 13002 13003 Unit Collector Base Voltage VCBO 600 V Collector Emitter Voltage VCEO 400 , . Typ. Max. Unit hFE 10 - 70 V(BR)CBO 600 - - V V(BR)CEO 400 - - V V(BR)EBO 9 - - V ICBO - - 100 nA IEBO - - 100 µA , =5mA 13003 Collector Emitter Breakdown Voltage at IC=5mA Emitter Base Breakdown Voltage at IE=1mA Collector Cutoff Current at VCB=600V 13002 at VCB=700V 13003 Emitter Cutoff Current at VEB
Semtech Electronics
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W 13003 TRANSISTOR 13002 power transistor c s 13002 TRANSISTOR w 13002 g 13003 13003 w

E 13003 TRANSISTOR

Abstract: c s 13003 TRANSISTOR TE 13003 a^QO'te DDORb'S? : AL GG Silicon NPN Power Transistors Applications: Switching , ^EBO *c ^ C M T E 13002 300 600 9 1,5 3 0.75 0.75 38 150 - 6 5 .+ 1 5 0 T E 13003 400 700 V V V A A A , TELEFUNKEN ELECTRONIC 17E D ODOUEfl 3 AL(S6 T-33-11 Min. Typ. Max. TE 13002 · TE 13003 , = 150°C, Vr 4S0 Lc. = 60 0 V · VCE = 70 0 V TE 13002 TE 13003 TE 13002 TE 13003 'CES 'cES , Collector-emitter breakdown voltage /c = 100 mA, i.c = 125 mH TE 13002 Fig. 1,2 TE 13003 Emitter-base breakdown
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E 13003 TRANSISTOR LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 transistor 13003 k T-33-II 0IN41 I3-75 15A3DIN

X 13003

Abstract: 13002 13002 TE 13003 Silicon NPN Power Transistors Applicatipns: Switching mode power supply, electronic , case 'CES TE 13002 300 600 TE 13003 400 700 9 1.5 3 0.75 0.75 38 150 -65.+ 150 3.3 V V , â'¢ TE 13003 T-33-11 Characteristics Min. Typ. Tcm(= 25 °C, unless otherwise specified Collector cut-off current Vce=600V Vce=700V r«â'ž=150OC' Vce = 600V Vce = 700V TE 13002 TE 13003 TE 13002 TE 13003 Collector-emitter breakdown voltage /c= 100 mA, Lc= 125 mH TE 13002 Fig. 1.2 TE 13003
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X 13003 d 13003 x 13003 d sa 13002 13003 h F 13003 000U5S

transistor sw 13003

Abstract: sw 13003 V; lc = 1 A Vn .; = 10 V; Ic = 100 mA; f - 1 M il/ Type T D 13002 T D 13003 T D 13002 T D 13003 TD 13002 T D 13003 Symbol Ices Icks Ices Ices V(BR)CEO V(BR)CEO V(BR)EBO VCEsal VCEsal VßEsat hEE hEE fT 8 , Applications Electronic lam p ballast circuits Sw itch-m ode pow er supplies T D 1 3002 · T D 13003 1 B a s , ollector-em itter voltage Test C onditions type TD 13002 TD 13003 T D 13002 TD 13003 E m itter-base voltage C
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transistor sw 13003 Sw 13003 c transistor x 13002 T 13003 transistor E 13003 b TRANSISTOR transistor switch 13003 TD13002 TD13003 T0252

13003 TRANSISTOR

Abstract: E 13003 TRANSISTOR 13003 Transistor (NPN) www.hsin.com.sg HSiN Semiconductor Pte Ltd 13003 TO-220 TRANSISTOR NPN FEATURES Power dissipation PCM : 1.5 WTamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J T stg: -55 to , Collector-base breakdown voltage V(BR)CBO Ic= 1000 µAIE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1000 µAIC
HSiN Semiconductor
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13003 NPN Transistor features HSiN Semiconductor Pte transistor D 1710 13003TRANSISTOR 13003 L 13003 to-220 100TYP 540TYP

13003

Abstract: X 13003 Optoway PDA-1300-3 * PDA-1300-3 3 GHz InGaAs PIN Photodiode Module for CATV/Wireless/SAT Receiver * DESCRIPTION PDA-1300-3 InGaAs PIN Photodiode series are high quality 3 GHz analog photodetectors designed for , /W Note (1*) -70 dBc BR 2 Order Intermodulation Modulation Back Reflection = 1550 , 4/9/2009 V2.0 Optoway PDA-1300-3
OPTOWAY Technology
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PDA-1300-3 PIN Photodiode For CATV Receiver 1550nm catv receiver PDA-1300 PIN Photodiode 1550nm InGaAs Photodiode 1550nm

NEOREC-41

Abstract: NEOREC-32H (1/1) 001-01 / 20010903 / e331.fm Magnets NEOREC Series NdFeB Type Rare Earth Magnets MAGNETIC CHARACTERISTICS Press method Axial press Transverse press Material Remanent flux density Br(T) Coercive force HcB(kA/m) HcJ(kA/m) NEOREC-50 NEOREC-47B NEOREC-45 NEOREC , -31UH 1.43±0.03 1.39±0.03 1.36±0.03 1.36±0.03 1.33±0.03 1.3±0.03 1.26±0.03 1.26±0.03 1.21±0.03 1.2±0.03 1.36±0.03 1.33±0.03 1.3±0.03 1.3±0.03 1.24±0.03 1.24±0.03 1.18±0.03 1.18±0.03 1.15±0.03 1.15±0.03
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NEOREC-44H NEOREC-41 NEOREC-35SH NEOREC-42B NEOREC-40 NEOREC-37H NEOREC-32H NEOREC Nd-Fe-B NEOREC-41H NEOREC-38H NEOREC-38SH

13003 TRANSISTOR

Abstract: st 13003 TRANSISTOR npn ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic , , IB = 250 mA Symbol Min. Max. Unit hFE 10 70 - V(BR)CBO 600 - V V(BR)CEO 400 - V V(BR)EBO 9 - V ICBO - 100 nA IEBO - 100 , Code: 724) R Dated : 22/03/2006 ST 13003 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD
Semtech Electronics
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st 13003 TRANSISTOR npn ST 13003 w transistor ST 13003 w transistor ST 13003 w, TO-220 13003 to220 13003 power transistor

REGULATOR sw 13003

Abstract: transistor sw 13003 Ordering number : ENA1219 NMP13003(13003 series) SANYO Semiconductors DATA SHEET NMP13003 (13003 series) Features · · · · NPN Triple Diffused Planar Silicon Transistor Switching , . A1219-1/4 NMP13003(13003 series) Continued from preceding page. Parameter Gain-Bandwidth Product , Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=10V, IC=0.1A VCB=10V, f=1MHz IC=0.5A, IB=0.1A IC
SANYO Electric
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REGULATOR sw 13003 PC 13003 TRANSISTOR circuit PC 13003 TRANSISTOR SW 13003 A etc 13003 A12194 PW300 A1219-4/4

13003 TRANSISTOR

Abstract: transistor 13003 ST 13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. TO-220 Plastic , , IB = 250 mA Symbol Min. Max. Unit hFE 10 70 - V(BR)CBO 600 - V V(BR)CEO 400 - V V(BR)EBO 9 - V ICBO - 100 nA IEBO - 100 , Code: 724) ® Dated : 22/03/2006 ST 13003 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD
Semtech Electronics
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13003 TRANSISTOR equivalent ST-13003 ST-13003 TO-220 13003 TRANSISTOR npn to220 13003 application notes semtech electronics 13003

sa 13003

Abstract: 13003 Optoway PDA-1300-3 * PDA-1300-3 3 GHz InGaAs PIN Photodiode Module for CATV/Wireless/SAT Receiver * DESCRIPTION PDA-1300-3 InGaAs PIN Photodiode series are high quality 3 GHz analog photodetectors designed for , 0.85 A/W Note (1*) -70 dBc BR 2 Order Intermodulation Modulation Back Reflection , /1/2007 V1.0 Optoway PDA-1300-3
OPTOWAY Technology
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sa 13003 H 13003 PIN photodiode responsivity 1550nm 2,5 GHz 1550nm photodiode 3,8 Ghz d f 13003 photodiode responsivity 1550nm 2

13003 transistor SMD

Abstract: transistor smd XH Applications Electronic lamp ballast circuits Switch-mode power supplies 94 8965 TD13002 · T D 13003 1 , voltage Type TD13002 TD13003 TD 13002 TD 13003 Emitter-base voltage Collector current Collector peak , TD13003 Ioe s TD13002 V(BR)CEO TD13003 V(BR)CEO V(BR)EBO Min Typ Max 0.1 0.1 1 1 300 400 9 , Pulses I(BR)R 100 mQ tp = 10 ms Figure 1. Test circuit for V( b r )ceo (1) Fast electronic
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13003 transistor SMD transistor smd XH d13003 al 13003 transistor al 13003 c s 13003 TRANSISTOR h TD13003-SM

NEOREC30UX

Abstract: MIL202F-106E (2/31) (BH)max 49MGOe58 7.4g/cm3 10%(VCM) MRI SmNd (BH)max Br HCJ Br HCJ C// (0100°C) C (0100°C) 25kOe NdFe NdFeB , Nd1.1Fe4B4 Nd2O3 Nd2C3 NEOREC % B-rich (%) Br (kG) 38's 84 , ­H 0 ­5 500 250 0 Br HCB HCJ (BH)max [mT] (kG) [kA/m] (kOe) [kA/m , ] ­15 1500 1250 ­10 1000 750 ­H 0 ­5 500 250 0 Br HCB HCJ (BH
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NEOREC42SH NEOREC40UH NEOREC30UX MIL202F-106E NEOREC-44 NEOREC35UX 6.000 hcj NEOREC34SH 2002/95/EC NEOREC50H NEOREC52A NEOREC50B NEOREC50F NEOREC47B

2SC5915

Abstract: 13003ts No. N 7 4 0 8 2SC5915 No. N 7 4 0 8 13003 2SC5915 NPN , , , MBIT Absolute Maximum Ratings / Ta=25 unit VCBO VCES 120 120 V V VCEO VEBO 50 6 V V () IC ICP 10 15 A A IB PC 2 1.65 A W , 370-0596 11 13003 TS IM TA-100348 No.7408-1/4 2SC5915 min typ fT Cob VCE=5V, IC , 0.93 V(BR)CBO IC=100µA, IE=0 V(BR)CES IC=100µA, RBE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO IE
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13003ts 74084 74081 OP73 PC 13003 74083 2069C 20IB1 IT05558 IT05559 IT05561

crystal HCJ

Abstract: HCJ crystal . 1 Features/Applications . 2 Br , Magnetic characteristics Maximum energy product (BH)max Residual flux density Br Intrinsic coercive force HCJ Recoil permeability Reversible temperature coefficient of Br Temperature coefficient of HCJ , . 001-02 / 20081209 / e331.fm (3/31) Br/HCJ CHARACTERISTICS DISTRIBUTION OF NEOREC MAGNETS [mT , Residual flux density Br 27UX 26 26A 1000 10 24 22 REC(Sm-Co) 18 Transverse
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crystal HCJ HCJ crystal si 13003 br crystal hcj 30 motor 42SH optical pickup unit NEOREC45F NEOREC27UX

SW 13003

Abstract: TR 13003 No. N 7 4 0 5 ECH8605 No. N 7 4 0 5 13003 ECH8605 P MOS 4V Absolute Maximum Ratings / Ta=25 unit VDSS VGSS - 30 ± 20 DC ID IDP PW 10µs, duty cycle 1% -4 - 40 PD PT (900mm2 × 0.8mm) 1unit (900mm2 × 0.8mm) Tch , max unit -1 V(BR)DSS IDSS 1.3 1.5 min A A 150 - 55 150 Electrical , : Drain1 SANYOECH8 370-0596 11 13003 TS IM TA-100300 No.7405-1/4 ECH8605 min Ciss Coss
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TR 13003 IT05580 IT05578 IT05579

n2206

Abstract: N7356 : Emitter 2 : Collector 3 : Base SANYO : SPA 370-0596 11 N2206 / 91003 TS IM / 13003 TS IM TA , =20mA tstg tf max unit 140 0.9 V(BR)CBO IC=10µA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO IE
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15C02SP N7356 n735 TA-100119 T05037 IT05038
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