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BPW17N Vishay Semiconductors Photo Transistor, 825nm, MINIATURE, PLASTIC, T-3/4 PACKAGE-2

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Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.2450 Price Each : $0.82
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : €0.2348 Price Each : €0.2354
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : 2,227 Best Price : $0.2450 Price Each : $0.3370
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : - Best Price : $0.24 Price Each : $0.3250
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : RS Components Stock : 4,520 Best Price : £0.1620 Price Each : £0.2080
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Chip1Stop Stock : 24,589 Best Price : $0.21 Price Each : $0.21
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : element14 Asia-Pacific Stock : 4,974 Best Price : $0.31 Price Each : $1.0640
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : 4,115 Best Price : £0.22 Price Each : £0.5260
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BPW17 Datasheet

Part Manufacturer Description PDF Type
BPW17 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BPW17 N/A Semiconductor Master Cross Reference Guide Scan
BPW17 Philips Components Philips Data Book Scan Scan
BPW17 Telefunken Electronic Electronic Component Data Book 1976 Scan
BPW17 Telefunken Electronic Optoelectronic Device Data Book 1977 Scan
BPW17/9 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BPW17/9 Telefunken Electronic Electronic Component Data Book 1976 Scan
BPW17/9 Telefunken Electronic Optoelectronic Device Data Book 1977 Scan
BPW17N Vishay Intertechnology Silicon NPN Phototransistor Original
BPW17N Vishay Siliconix Silicon NPN Phototransistor Original
BPW17N Vishay Telefunken Phototransistor, 1nA Dark Current, 825nm Wavelength Original
BPW17N Philips Components Philips Data Book Scan Scan
BPW17N Telefunken Electronic Photo Detectors / Phototransistors / Photo Pin Diodes Scan

BPW17

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: www.i-t.su info@i-t.su MHTEPTEKC Ten: (495) 739-09-95, 644-41-29 electronics 0OTOTpaH3MCTOpbl BPW17 Kofl: flrmHa BonHbi yron b TOHKe mskc. o63opa HyBCTBMT. Xmax BPW17 780 hm ±12° UCEo MyBCTBHTenbHOCTb Tun rmH3bi (UCE = 5B, X = 950 HM) 32B 1MA@1 MBT/cm2 6ecqBeTHaa KaTOfl 2.4(094) 1.5S(.061) 1,0 MAX 0.5(0.02) nporpaMMa nociaBOK KOMnaHMM TME -
OCR Scan
Abstract: fotorezistor SF3-9A FT-1K FTG-3 FD-24K TF5-1 AOT123A AL107A AL119A LDR07 fotorezistor BPW17/9 -
Original
D226B KD226D KD509A KD522A KU201A KU208G BY238 LDR05 siek2 siek 1 siek-7 siek-6 D220B D226G D302A D814V
Abstract: Optoelectronic devices Detector arrays Multichlp arrays «specially for coupling with analogue constructed emitter arrays Type Fig. Nr. Number of elements Raster dimensions mm Maximum ratings Characteristics - electrical + optical Spectral curve (see page 71) 'tot at 'amb = 25 °c mW UCEO V a UQ and mA W) mA 'r at i/s = 5 V, /c = MS 'f 5mA;RL=100Q MS BPW16/9 26 9 2.54 200 32 80° - 0.4 1.6 1.7 1 BPW17/9 27 9 2.54 200 32 CM - 3 1.6 1.7 1 BPW19 28 10 2.54 200 32 50° - 1.3 1.6 1.7 1 BPX58 29 -
OCR Scan
Abstract: Optoelectronic devices Photo transistors Type Group Fig. Maximum ratings Characteristics - electrical + optical Spectral curve Nr. Aot ^CEO a W> O (see page 71) at 'amb = + 25°c at Us = 5 V, R L = 100Q W V mA MS ps BPW13 A 21 0.375 32 80° 0.2.0.4 1.6 1 B 21 0.375 32 80° 0.3.0.6 1.6 1 C 21 0.375 32 80° >0.5 1.6 1 BPW14 A 22 0.375 32 25° 2.4 1.6 1 B 22 0.375 32 25° 3.6 1.6 1 C 22 0.375 32 25° >5.0 1.6 1 BPW16 23 0.05 32 80° 0.4 1.6 1 BPW17 -
OCR Scan
BPW29 BPW14A BPW29 100 BPW13A BPW16/BPW17
Abstract: for: f' f 150 BPW16 â'¢ BPW17 BPW 16 â'¢ BPW 17 152 BPW 16 â'¢ BPW 17 30° 20° 10° 0° 10 -
OCR Scan
TFK 148 TFK BPW 20 TFK 149 bpw 148 7314 montage BPW 50 383/0175A1 5033/IE
Abstract: BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · Package , /EC with APPLICATIONS DESCRIPTION BPW17N is a silicon NPN phototransistor with high radiant , control and drive circuits PRODUCT SUMMARY COMPONENT BPW17N Note Test condition see table "Basic Characteristics" Ica (mA) 1.0 (deg) ± 12 0.1 (nm) 450 to 1040 ORDERING INFORMATION ORDERING CODE BPW17N Note , : detectortechsupport@vishay.com Document Number: 81516 Rev. 1.7, 08-Sep-08 BPW17N Silicon NPN Phototransistor, RoHS -
OCR Scan
APY12 BAV77 varicap diode bb122 BAV12 BAV27 BAY26 NS348 NS349 NS256 NS357 BS3934 SO-26
Abstract: = 950 nm) Photo Transistors in Clear Plastic Package s BPW16N 0.36 BPW17N BPW85A BPW85B BPW85C -
OCR Scan
germanium AEG Thyristor T 558 F TDA1086 TDA 2516 la 4430 germanium transistor AA113 AA117 AA119 BAV17 BAV18 BAV19
Abstract: CQY37N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES · Package type: leaded · Package form: T-¾ · Dimensions (in mm): 1.8 · Peak wavelength: p = 950 nm · High reliability · Angle of half intensity: = ± 12° · Low forward voltage · Suitable for high pulse current operation 94 8638-2 · Good spectral matching with Si photodetectors · Package matches with detector BPW17N · Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC -
OCR Scan
TIL702 TIL701 til78 phototransistor TIL81 TIL339 TIL393-9 LCC4230-D EPN4050
Abstract: CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature (T­¾) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters. Features D D D D D Suitable for pulse operation Standard T­¾ lensed miniature package 94 8639 Angle of DigiKey Electronics Catalog
Original
schematic diagram atx Power supply 500w pioneer PAL 012A 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu LN086WP38 LN11WP23 LN11CP23 LN11WP24 LN11WP34 LN11WP38
Abstract: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature (T-¾) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters. 94 8638 Features · · · · · · · Suitable for pulse operation Standard T-¾ lensed miniature package Angle of half Vishay Semiconductors
Original
BPW17N application note ic 8243
Abstract: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature (T-¾) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters. 94 8638 Features Applications · · · · · · · · Radiation source in near infrared range Suitable -
OCR Scan
TEMD2100 c1g smd bpv10nf CQY36N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600
Abstract: BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · Package , DESCRIPTION BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic , COMPONENT ± 12 450 to 1040 BPW17N Note Test condition see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW17N Bulk MOQ: 5000 , : detectortechsupport@vishay.com Document Number: 81516 Rev. 1.7, 08-Sep-08 BPW17N Silicon NPN Phototransistor, RoHS Vishay Semiconductors
Original
7922 diode Infrared Emitting Diode
Abstract: BPW17N Silicon NPN Phototransistor Description BPW 17N is a silicon NPN epitaxial planar phototransis tor in a miniature plastic case with a + 12` lens. With a lead center to center spacing of 2.54mm , e m iconductors BPW17N Test Conditions Ic = 1 iuA V ce = 20 V, E = 0 V ce = 5 V, f = 1 MHz, E , Semiconductors Rev. A2, l5-Jul-% 267 BPW17N Temic Semiconductor* > , Semiconductors BPW17N 94 8243 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement Vishay Telefunken
Original
telefunken 88/540/EEC 91/690/EEC D-74025
Abstract: VISHAY BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a , 81516 Rev. 1.3, 26-Mar-04 www.vishay.com 1 BPW17N Vishay Semiconductors Optical Characteristics , www.vishay.com 2 Document Number 81516 Rev. 1.3, 26-Mar-04 VISHAY BPW17N Vishay Semiconductors S , -Mar-04 www.vishay.com 3 BPW17N Vishay Semiconductors Package Dimensions in mm VISHAY 96 12187 , international statutory requirements. BPW17N Vishay Semiconductors 2. Regularly and continuously improve Vishay Semiconductors
Original
Abstract: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature (T-¾) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters. Features · Suitable for pulse operation · · · · · · Standard T-¾ lensed miniature package Angle of half intensity = ± Vishay Semiconductors
Original
Abstract: www.i-t.su info@i-t.su MHTEPTEKC Ten: (495) 739-09-95, 644-41-29 electronics 0OTOTpaH3MCTOpbl BPW17 Kofl: flrmHa BonHbi yron b TOHKe mskc. o63opa HyBCTBMT. Xmax BPW17 780 hm ±12° UCEo MyBCTBHTenbHOCTb Tun rmH3bi (UCE = 5B, X = 950 HM) 32B 1MA@1 MBT/cm2 6ecqBeTHaa KaTOfl 2.4(094) 1.5S(.061) 1,0 MAX 0.5(0.02) nporpaMMa nociaBOK KOMnaHMM TME Element14 Catalog
Original
mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618
Abstract: Optoelectronic devices Detector arrays Multichlp arrays «specially for coupling with analogue constructed emitter arrays Type Fig. Nr. Number of elements Raster dimensions mm Maximum ratings Characteristics - electrical + optical Spectral curve (see page 71) 'tot at 'amb = 25 °c mW UCEO V a UQ and mA W) mA 'r at i/s = 5 V, /c = MS 'f 5mA;RL=100Q MS BPW16/9 26 9 2.54 200 32 80° - 0.4 1.6 1.7 1 BPW17/9 27 9 2.54 200 32 CM - 3 1.6 1.7 1 BPW19 28 10 2.54 200 32 50° - 1.3 1.6 1.7 1 BPX58 29 Vishay Semiconductors
Original
npn phototransistor 8239
Abstract: fotorezistor SF3-9A FT-1K FTG-3 FD-24K TF5-1 AOT123A AL107A AL119A LDR07 fotorezistor BPW17/9 -
OCR Scan
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