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BPW17N Atmel Corporation Photo Transistor, 825nm, PLASTIC, 2 PIN visit Digikey Buy
BPW17N Vishay Semiconductors Photo Transistor, 825nm, MINIATURE, PLASTIC, T-3/4 PACKAGE-2 visit Digikey Buy
CBPW-17 Curtis Industries CONN BARRIER STRP 17CIRC 0.375 visit Digikey Buy

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Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : 5,000 Best Price : €0.2318 Price Each : €0.2341
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $0.2423 Price Each : $0.2447
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : 2,000 Best Price : $0.20 Price Each : $0.3370
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : - Best Price : $0.24 Price Each : $0.3250
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : RS Components Stock : 3,020 Best Price : £0.2010 Price Each : £0.2070
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : RS Components Stock : 700 Best Price : £0.2010 Price Each : £0.23
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Rutronik Stock : 5,000 Best Price : $0.2080 Price Each : $0.2527
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Chip1Stop Stock : 11,500 Best Price : $0.2890 Price Each : $0.3010
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Chip1Stop Stock : 4,500 Best Price : $0.3470 Price Each : $0.5021
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : element14 Asia-Pacific Stock : 8,489 Best Price : $0.32 Price Each : $1.0240
Part : BPW17N Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : 6,818 Best Price : £0.1940 Price Each : £0.2840
Shipping cost not included. Currency conversions are estimated. 

BPW17 Datasheet

Part Manufacturer Description PDF Type
BPW17 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BPW17 N/A Semiconductor Master Cross Reference Guide Scan
BPW17 Philips Components Philips Data Book Scan Scan
BPW17 Telefunken Electronic Electronic Component Data Book 1976 Scan
BPW17 Telefunken Electronic Optoelectronic Device Data Book 1977 Scan
BPW17/9 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BPW17/9 Telefunken Electronic Electronic Component Data Book 1976 Scan
BPW17/9 Telefunken Electronic Optoelectronic Device Data Book 1977 Scan
BPW17N Vishay Intertechnology Silicon NPN Phototransistor Original
BPW17N Vishay Siliconix Silicon NPN Phototransistor Original
BPW17N Vishay Telefunken Phototransistor, 1nA Dark Current, 825nm Wavelength Original
BPW17N Philips Components Philips Data Book Scan Scan
BPW17N Telefunken Electronic Photo Detectors / Phototransistors / Photo Pin Diodes Scan

BPW17

Catalog Datasheet MFG & Type PDF Document Tags

BPW17

Abstract: www.i-t.su info@i-t.su MHTEPTEKC Ten: (495) 739-09-95, 644-41-29 electronics 0OTOTpaH3MCTOpbl BPW17 Kofl: flrmHa BonHbi yron b TOHKe mskc. o63opa HyBCTBMT. Xmax BPW17 780 hm ±12° UCEo MyBCTBHTenbHOCTb Tun rmH3bi (UCE = 5B, X = 950 HM) 32B 1MA@1 MBT/cm2 6ecqBeTHaa KaTOfl 2.4(094) 1.5S(.061) 1,0 MAX 0.5(0.02) nporpaMMa nociaBOK KOMnaHMM TME
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OCR Scan

BY238

Abstract: LDR07 fotorezistor SF3-9A FT-1K FTG-3 FD-24K TF5-1 AOT123A AL107A AL119A LDR07 fotorezistor BPW17/9
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Original
D226B KD226D KD509A KD522A KU201A KU208G BY238 LDR05 siek2 siek 1 siek-7 siek-6 D220B D226G D302A D814V

BPW19

Abstract: BPW17 Optoelectronic devices Detector arrays Multichlp arrays «specially for coupling with analogue constructed emitter arrays Type Fig. Nr. Number of elements Raster dimensions mm Maximum ratings Characteristics - electrical + optical Spectral curve (see page 71) 'tot at 'amb = 25 °c mW UCEO V a UQ and mA W) mA 'r at i/s = 5 V, /c = MS 'f 5mA;RL=100Q MS BPW16/9 26 9 2.54 200 32 80° - 0.4 1.6 1.7 1 BPW17/9 27 9 2.54 200 32 CM - 3 1.6 1.7 1 BPW19 28 10 2.54 200 32 50° - 1.3 1.6 1.7 1 BPX58 29
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OCR Scan

BPW14

Abstract: BPW14A Optoelectronic devices Photo transistors Type Group Fig. Maximum ratings Characteristics - electrical + optical Spectral curve Nr. Aot ^CEO a W> O (see page 71) at 'amb = + 25°c at Us = 5 V, R L = 100Q W V mA MS ps BPW13 A 21 0.375 32 80° 0.2.0.4 1.6 1 B 21 0.375 32 80° 0.3.0.6 1.6 1 C 21 0.375 32 80° >0.5 1.6 1 BPW14 A 22 0.375 32 25° 2.4 1.6 1 B 22 0.375 32 25° 3.6 1.6 1 C 22 0.375 32 25° >5.0 1.6 1 BPW16 23 0.05 32 80° 0.4 1.6 1 BPW17
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OCR Scan
BPW29 BPW14A BPW29 100 BPW16/BPW17 BPW13A

TFK 148

Abstract: TFK BPW 20 for: f' f 150 BPW16 â'¢ BPW17 BPW 16 â'¢ BPW 17 152 BPW 16 â'¢ BPW 17 30° 20° 10° 0° 10Â
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OCR Scan
TFK 148 TFK BPW 20 TFK 149 bpw 148 7314 bpw 50 383/0175A1 5033/IE

APY12

Abstract: AEY26 BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · Package , /EC with APPLICATIONS DESCRIPTION BPW17N is a silicon NPN phototransistor with high radiant , control and drive circuits PRODUCT SUMMARY COMPONENT BPW17N Note Test condition see table "Basic Characteristics" Ica (mA) 1.0 (deg) ± 12 0.1 (nm) 450 to 1040 ORDERING INFORMATION ORDERING CODE BPW17N Note , : detectortechsupport@vishay.com Document Number: 81516 Rev. 1.7, 08-Sep-08 BPW17N Silicon NPN Phototransistor, RoHS
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OCR Scan
APY12 AEY26 BAV77 bux transient voltage suppressor BAV12 ASY80 RTc NS348 NS349 NS256 NS357 BS3934 SO-26

germanium

Abstract: TDA 2516 CQY37N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES · Package type: leaded · Package form: T-¾ · Dimensions (in mm): 1.8 · Peak wavelength: p = 950 nm · High reliability · Angle of half intensity: = ± 12° · Low forward voltage · Suitable for high pulse current operation 94 8638-2 · Good spectral matching with Si photodetectors · Package matches with detector BPW17N · Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC
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OCR Scan
germanium TDA 2516 BZY87 Series BD 433NPNTO-126 BB505 BC431 AA113 AA117 AA119 BAV17 BAV18 BAV19

TIL702

Abstract: TIL701 = 950 nm) Photo Transistors in Clear Plastic Package s BPW16N 0.36 BPW17N BPW85A BPW85B BPW85C
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OCR Scan
TIL702 TIL701 til78 phototransistor TIL393-9 TIL81 TIL313 LCC4230-D EPN4050

BPW17N application note

Abstract: ic 8243 CQY37N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature (T­¾) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters. Features D D D D D Suitable for pulse operation Standard T­¾ lensed miniature package 94 8639 Angle of
Vishay Semiconductors
Original
BPW17N application note ic 8243

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A BPW17N Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES · Package , DESCRIPTION BPW17N is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic , COMPONENT ± 12 450 to 1040 BPW17N Note Test condition see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW17N Bulk MOQ: 5000 , : detectortechsupport@vishay.com Document Number: 81516 Rev. 1.7, 08-Sep-08 BPW17N Silicon NPN Phototransistor, RoHS
DigiKey Electronics Catalog
Original
schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon LN086WP38 LN11WP23 LN11CP23 LN11WP24 LN11WP34 LN11WP38

CQY37N

Abstract: 7922 diode CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature (T-¾) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters. 94 8638 Features Applications · · · · · · · · Radiation source in near infrared range Suitable
Vishay Semiconductors
Original
7922 diode Infrared Emitting Diode

c1g smd

Abstract: bpv10nf VISHAY BPW17N Vishay Semiconductors Silicon NPN Phototransistor Description BPW17N is a , 81516 Rev. 1.3, 26-Mar-04 www.vishay.com 1 BPW17N Vishay Semiconductors Optical Characteristics , www.vishay.com 2 Document Number 81516 Rev. 1.3, 26-Mar-04 VISHAY BPW17N Vishay Semiconductors S , -Mar-04 www.vishay.com 3 BPW17N Vishay Semiconductors Package Dimensions in mm VISHAY 96 12187 , international statutory requirements. BPW17N Vishay Semiconductors 2. Regularly and continuously improve
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OCR Scan
TEMD2100 c1g smd bpv10nf CQY36N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600

BPW17

Abstract: telefunken CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature (T-¾) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters. Features · Suitable for pulse operation · · · · · · Standard T-¾ lensed miniature package Angle of half intensity = ±
Vishay Telefunken
Original
telefunken 88/540/EEC 91/690/EEC D-74025

npn phototransistor

Abstract: BPW17N CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature (T-¾) Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters. 94 8638 Features · · · · · · · Suitable for pulse operation Standard T-¾ lensed miniature package Angle of half
Vishay Semiconductors
Original
npn phototransistor 8239

CQY37N

Abstract: BPW17N www.i-t.su info@i-t.su MHTEPTEKC Ten: (495) 739-09-95, 644-41-29 electronics 0OTOTpaH3MCTOpbl BPW17 Kofl: flrmHa BonHbi yron b TOHKe mskc. o63opa HyBCTBMT. Xmax BPW17 780 hm ±12° UCEo MyBCTBHTenbHOCTb Tun rmH3bi (UCE = 5B, X = 950 HM) 32B 1MA@1 MBT/cm2 6ecqBeTHaa KaTOfl 2.4(094) 1.5S(.061) 1,0 MAX 0.5(0.02) nporpaMMa nociaBOK KOMnaHMM TME
Vishay Semiconductors
Original

A 69157 scr

Abstract: 65k5 Optoelectronic devices Detector arrays Multichlp arrays «specially for coupling with analogue constructed emitter arrays Type Fig. Nr. Number of elements Raster dimensions mm Maximum ratings Characteristics - electrical + optical Spectral curve (see page 71) 'tot at 'amb = 25 °c mW UCEO V a UQ and mA W) mA 'r at i/s = 5 V, /c = MS 'f 5mA;RL=100Q MS BPW16/9 26 9 2.54 200 32 80° - 0.4 1.6 1.7 1 BPW17/9 27 9 2.54 200 32 CM - 3 1.6 1.7 1 BPW19 28 10 2.54 200 32 50° - 1.3 1.6 1.7 1 BPX58 29
Newark Catalog
Original
A 69157 scr 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC 90F8548 SDP8600-001 95F5325 SDP8371-001 28H5849 28H5850

BPW17N

Abstract: fotorezistor SF3-9A FT-1K FTG-3 FD-24K TF5-1 AOT123A AL107A AL119A LDR07 fotorezistor BPW17/9
Vishay Semiconductors
Original
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