BPT20B12 - Datasheet Archive

 

Part Number BPT20B12 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: · Common Base Package Configuration

 

BIPOLARICS, INC Part Number BPT20B12 BPT20B12 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: · Common Base Package Configuration · High Output Power 12 W @ 2.0 GHz · High Gain Bandwidth Product f = 6.0 GHz @ IC = 960 m A t · High Gain GPE = 7.5 dB @ 2.0 GHz · High Reliability Gold Metallization Nitride Passivation · Diffused Ballast Resistors · BeO Packaging Absolute Maximum Ratings: SYMBOL UNITS Collector-Base Voltage 40 V VCEO VEBO IC Collector-Emitter Voltage Emitter-Base Voltage Collector Current (instantaneous) 20 3.0 1.92 V V A T SYMBOL RATING VCBO PERFORMANCE DATA: · Electrical Characteristics (TA = 25oC) PARAMETERS Junction Temperature J TSTG Storage Temperature JC Thermal Resistance PARAMETERS & CONDITIONS UNIT o 200 C -65 to 200 6.5 MIN. TYP. o C C/W MAX. VCE =15V, I C = 960 mA, Class C P1dB Power output at 1 dB compression: f = 2.0 GHz W 12 Collector Efficiency Class C % 65 hFE Forward Current Transfer Ratio: VCB = 8V, IC = 400 mA COB Output Capacitance: PT Total Power Dissipation f = 1 MHz, I E = 0 20 pF W 60 8.0 18.5 100 PAGE 2 BIPOLARICS, INC. Part Number BPT20B12 BPT20B12 SILICON MICROWAVE POWER TRANSISTOR 25 Package: 0.250" 2 Lead Flange NOTES: (unless otherwise specified) in 1. Dimensions are (mm) 2. Tolerances: in .xxx = ± .005 mm .xx = ± .13 3. All dimensions nominal; subject to change without notice LEAD 25 Package 1 Emitter 2 Base 3 4 Collector Base BIPOLARICS, INC. 46766 Lakeview Blvd. Fremont, CA 94538 Phone: (510) 226-6565 FAX: (510) 226-6765