BLV2042 AN98018 AN98017 AN98026 MGH811 MGH810 MGH812 MGH813 MGH814 MGH815 - Datasheet Archive

 

4 W Linear Class-AB amplifier with the BLV2042 for 1930 -1990 MHz AN98018 Philips Semiconductors 4 W Linear Class-AB amplifier

 

APPLICATION NOTE 4 W Linear Class-AB amplifier with the BLV2042 BLV2042 for 1930 -1990 MHz AN98018 AN98018 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 BLV2042 for 1930 -1990 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION 4 AMPLIFIER PERFORMANCE 5 CONCLUSION 1998 Mar 23 2 Application Note AN98018 AN98018 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 BLV2042 for 1930 -1990 MHz 1 Application Note AN98018 AN98018 INTRODUCTION This application note contains information on a 4 W class-AB amplifier based on the SMD transistor BLV2042 BLV2042. The amplifier described can be used for driver stages in cellular radio base stations in the PCS band 1930 - 1990 MHz. The next sections contain information on the transistor, the amplifier construction and the typical RF performance obtained. 2 TRANSISTOR BACKGROUND The BLV2042 BLV2042 is an NPN bipolar RF power transistor in an 8-lead SMD package called SOT409. The package contains an Aluminium Nitride (AlN) substrate to enhance its thermal performance. The bottom surface is fully metallized to enable reflow soldering of the transistor to the printed-circuit board. All leads are isolated from the bottom surface and a ceramic lid is used to cover the transistor. The BLV2042 BLV2042 features internal input matching for easy wide band matching over the 1930 - 1990 MHz frequency band. When operated from a 26 V supply in class-AB mode the transistor has a minimum power gain of 11 dB and a minimum collector efficiency of 40%. Two tone IMD performance is typically -30 dBc. 3 AMPLIFIER DESCRIPTION Figure 1 shows the schematic diagram of the amplifier. The matching circuits applied are fixed tuned two-stage lowpass networks using striplines and multilayer chip capacitors. Conventional bias decoupling networks are applied with improved decoupling for two-tone operation. The list of components and stripline dimensions is given in Table 2. Figure 2 contains the printed-circuit board layout and components topology of the amplifier. The printed-circuit board contains a footprint of solder pads for collector and base lead interconnect and a thermal pad with vias to provide a low thermal resistance path to the package. Pads with vias for RF grounding of the emitter leads are integrated with the thermal pad. All SMD components were reflow soldered to the printed-circuit board. The printed-circuit board was soldered to a heatsink in the same process step. More details on the mounting considerations for the SOT409B can be found in application note AN98017 AN98017. The pc-board material used is Rogers RT/Duroid 6006 with a dielectric constant of 6.15 and a thickness of 0.64 mm. 1998 Mar 23 3 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 BLV2042 for 1930 -1990 MHz 4 Application Note AN98018 AN98018 AMPLIFIER PERFORMANCE The amplifiers performance was measured at Vce = 26 V and Icq = 15 mA. The heatsink temperature was held at 25 °C during the measurement. A summary of the performance is given in Table 1. Table 1 UNIT SINGLE-TONE TWO-TONE Frequency band MHz 1930 - 1990 1930 - 1990 Load power W 4 4 (PEP) Power gain dB 11 11.5 Power gain flatness dB 1.5 - Collector efficiency % 45 35 Intermodulation distortion dBc - -32 @ 4 W PEP Single-tone performance curves are presented in Figure 3; Load power(PL) versus drive power(Pd) Figure 4; Power gain (Gp) and collector efficiency(Eff) versus load power (PL). Two-tone performance curves are presented in Figure 5; Load power (PL-PEP) versus drive power (Pd-PEP) Figure 6; Power gain (Gp) and collector efficiency (Eff) versus load power (PL-PEP). Figure 7; Intermodulation distortion (d3) as function of load power (PL-PEP). 5 CONCLUSION An AlN based surface mountable transistor BLV2042 BLV2042 has been used to develop an amplifier for driver application in PCS base stations. Biased at 26 V and 15 mA this amplifier has shown a 4 W CW power output capability with a gain of 11 dB and a collector efficiency 45%. For two-tone operation the IMD performance is better than -32 dBc at 4 W PEP. In addition the IMD over a wide dynamic range can be further optimized by adding a base series resistor of a few ohms combined with a good selection of Icq as described in application note AN98026 AN98026. , , , , , , , , , , , +Vbias handbook, full pagewidth L1 +VC C5 C1 RF-in L1 C4 C3 C11 L4 L2 L3 C10 L5 L7 C8 L8 TR1 L6 C2 Fig.1 Schematic diagram. 1998 Mar 23 C9 R1 4 C6 RF-out C7 MGH811 MGH811 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 BLV2042 for 1930 -1990 MHz Application Note AN98018 AN98018 70 handbook, full pagewidth 41 L9 C3 C11 C10 R1 C4 C9 C5 C1 L1 L2 L4 L7 L5 C8 L8 L3 C2 L6 C6 C7 MGH810 MGH810 Fig.2 Printed-circuit board and layout. 1998 Mar 23 5 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 BLV2042 for 1930 -1990 MHz Application Note AN98018 AN98018 Table 2 COMPONENT DESCRIPTION VALUE DIMENSIONS C1 and C9 multilayer ceramic chip capacitor; note 1 100 pF C2 and C6 multilayer ceramic chip capacitor; note 2 3.0 pF C3 and C8 multilayer ceramic chip capacitor; note 2 27.0 pF C4 and C10 multilayer ceramic chip capacitor 100 pF C5 and C11 tantal SMD capacitor 35 V; 47 µF C7 multilayer ceramic chip capacitor; note 2 1.2 pF L1 stripline; note 3 50 9.91 × 0.91 mm L2 stripline; note 3 50 13 × 0.91 mm L3 stripline; note 3 10 4 × 8 mm L4 stripline; note 3 31 3 × 2 mm L5 stripline; note 3 31 CATALOGUE NO. 3 × 2 mm 2222 581 16641 L6 stripline; note 3 8.3 17.25 × 10.3 mm L7 stripline; note 3 50 2.42 × 0.91 mm L8 stripline; note 3 50 6.14 × 0.91 mm L9 grade 4S2 ferroxcube chip-bead R1 metal film resistor 100 ; 0.4 W T1 RF transistor BLV2042 BLV2042 4330 030 36301 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The stripline are on double copper-clad printed-circuit board RT/Duroid 6006 (r = 6.15); thickness 0.64 mm. 1998 Mar 23 6 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 BLV2042 for 1930 -1990 MHz Application Note AN98018 AN98018 MGH812 MGH812 6 handbook, halfpage PL (W) (1) 4 (2) (3) 2 0 0.1 0 0.2 0.3 0.4 Class AB: Vce = 26 V; Icq = 15 mA; 4 W loadline. (1) f = 1930 MHz. (2) f = 1990 MHz. (3) f = 1950 MHz. 0.5 Pd (W) Fig.3 PL = f (Pd). MGH813 MGH813 18 handbook, halfpage G p (dB) 15 60 efficiency (%) efficiency (1) 12 40 (2) (3) 9 gain (1) (2) (3) 6 20 3 0 0 0 2 4 6 PL (W) Class AB: Vce = 26 V; Icq = 15 mA; 4 W loadline. Gian: (1) f = 1930 MHz. Efficiency (1) f = 1930 MHz. (2) f = 1990 MHz. (3) f = 1950 MHz. (2) f = 1990 MHz. (3) f = 1950 MHz. Fig.4 Gp and Eff. = f (PL). 1998 Mar 23 7 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 BLV2042 for 1930 -1990 MHz Application Note AN98018 AN98018 MGH814 MGH814 5 handbook, halfpage PL (PEP) (W) 4 3 (1) (2) (3) 2 1 0 0 0.1 0.2 0.3 Pd (PEP) (W) 0.4 Class AB: Vce = 26 V; Icq = 15 mA; 4 W PEP loadline; delta-f = 0.1 MHz. (1) f = 1930 MHz. (2) f = 1990 MHz. (3) f = 1950 MHz. Fig.5 f = PL-PEP = f (Pd). MGH815 MGH815 18 p (dB) 15 handbook, halfpage G 60 efficiency (%) gain (1) (2) 12 40 (3) (1) 9 (2) efficiency (3) 6 20 3 0 0 0 2 4 6 PL (PEP) (W) Class AB: Vce = 26 V; Icq = 15 mA; 4 W PEP loadline; delta-f = 0.1 MHz. Gian: (1) f = 1930 MHz. Efficiency (1) f = 1930 MHz. (2) f = 1990 MHz. (3) f = 1950 MHz. (2) f = 1990 MHz. (3) f = 1950 MHz. Fig.6 Gp and Eff. = f (PL-PEP). 1998 Mar 23 8 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 BLV2042 for 1930 -1990 MHz Application Note AN98018 AN98018 MGM807 MGM807 -10 handbook, halfpage IMD (dB) -20 IMD3 (1) -30 (2) (3) -40 -50 0 2 4 PL-PEP (W) Class AB: Vce = 26 V; Icq = 15 mA; 4 W PEP loadline; delta-f = 0.1 MHz. (1) f = 1930 MHz. (2) f = 1990 MHz. (3) f = 1950 MHz. Fig.7 IMD = f (PL PEP). 1998 Mar 23 9 6 Philips Semiconductors ­ a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands Date of release: 1998 Mar 23