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    BLS6G3135-2 Search Results

    BLS6G3135-2 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BLS6G3135-20 NXP Semiconductors BLS6G3135 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF
    BLS6G3135-20 NXP Semiconductors LDMOS S-band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 45 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 20 W; Package material: SOT608A ; Power gain: 15.5 dB Original PDF
    BLS6G3135-20,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 60V 15.5DB SOT608A Original PDF
    BLS6G3135-20,112 NXP Semiconductors BLS6G3135 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power Original PDF
    BLS6G3135-20,112 NXP Semiconductors LDMOS S-band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 45 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 20 W; Package material: SOT608A ; Power gain: 15.5 dB; Package: SOT608A (CDFM2); Container: Blister pack Original PDF
    BLS6G3135-20i NXP Semiconductors BLS6G3135-20i LDMOS Transistor Model Original PDF
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    BLS6G3135-2 Price and Stock

    Ampleon BLS6G3135-20,112

    RF MOSFET LDMOS 32V CDFM2
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