BLS3135-10 |
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Philips Semiconductors
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Microwave Power Transistor |
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BLS3135-10 |
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Philips Semiconductors
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Microwave Power Transistor |
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PDF
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BLS3135-10,114 |
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Philips Semiconductors
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RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF POWER SOT445C |
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PDF
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BLS3135-10 TRAY |
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NXP Semiconductors
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Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 10 W; Operating voltage: 40 VDC; Power gain: 9 dB; Pulse width: 100 us |
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PDF
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BLS3135-20 |
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Philips Semiconductors
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Microwave Power Transistor |
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Original |
PDF
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BLS3135-20 |
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Philips Semiconductors
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Microwave power transistor |
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Scan |
PDF
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BLS3135-20,114 |
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Philips Semiconductors
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RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF POWER SOT422A |
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Original |
PDF
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BLS3135-20 TRAY |
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NXP Semiconductors
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Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 20 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 100 us |
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PDF
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BLS3135-50 |
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Philips Semiconductors
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Microwave power transistor |
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Original |
PDF
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BLS3135-50 |
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Philips Semiconductors
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Microwave Power Transistor |
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Original |
PDF
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BLS3135-50,114 |
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Philips Semiconductors
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RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF POWER SOT422A |
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Original |
PDF
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BLS3135-50 TRAY |
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NXP Semiconductors
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Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 50 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 100 us |
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Original |
PDF
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BLS3135-65 |
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Philips Semiconductors
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Microwave power transistor |
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Original |
PDF
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BLS3135-65,114 |
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Philips Semiconductors
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RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF POWER SOT422A |
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Original |
PDF
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BLS3135-65 TRAY |
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NXP Semiconductors
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Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 65 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 100 us |
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