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Part : BLL1214-250112 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 64 Best Price : $448.2700 Price Each : $551.7100
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BLL1214-250 Datasheet

Part Manufacturer Description PDF Type
BLL1214-250 Philips Semiconductors L-band radar LDMOS transistor Original
BLL1214-250 Philips Semiconductors L-Band Radar LDMOS Transistor Original
BLL1214-250,112 NXP Semiconductors L-band radar LDMOS transistor - Application: L-band Radar ; Description: L-Band Radar LDMOS RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 50 %; Frequency: 1200 - 1400 MHz; Load power: 250 W; Operating voltage: 36 VDC; Power gain: 13 dB; Pulse width: 1000 us; Package: SOT502A (LDMOST); Container: Blister pack Original
BLL1214-250R NXP Semiconductors LDMOS L-band radar power transistor Original
BLL1214-250R,112 NXP Semiconductors BLL1214-250R - L-band radar LDMOS transistor, SOT502A Package, Standard Marking, ICS Tube - DSC Bulk Pack Original

BLL1214-250

Catalog Datasheet MFG & Type PDF Document Tags

ATC200B

Abstract: BLL1214-250 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS , Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES PINNING - SOT502A , L-band radar LDMOS transistor BLL1214-250 THERMAL CHARACTERISTICS SYMBOL PARAMETER , OPERATION Pulsed class-AB; tp = 1 ms; = 10% Ruggedness in class-AB operation The BLL1214-250 is , radar LDMOS transistor BLL1214-250 MLD858 300 MLD859 300 handbook, halfpage
Philips Semiconductors
Original
ATC200B mld865 MBK394 SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B SCA74

ATC200B

Abstract: BLL1214-250 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS , Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES PINNING - SOT502A , Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 THERMAL , ; = 10% Ruggedness in class-AB operation The BLL1214-250 is capable of withstanding a load , BLL1214-250 MLD858 300 MLD859 300 handbook, halfpage handbook, halfpage PL (W) PL
Philips Semiconductors
Original
MLD861 SCA75
Abstract: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS , Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A FEATURES â , Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 , BLL1214-250 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases , Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 MLD858 300 Philips Semiconductors
Original

BLL1214-250

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS , L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A FEATURES · High power gain PIN , BLL1214-250 THERMAL CHARACTERISTICS SYMBOL Zth j-h PARAMETER CONDITIONS VALUE Th = 25 °C , BLL1214-250 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases , transistor BLL1214-250 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
Philips Semiconductors
Original
SCA73

Pallet VHF Power Amplifier

Abstract: BLF578 BLL1214-35 ­ BLL1214-250 CONFIDENTIAL 19 BU MMS Regional Marketing, Richard Marlow. February , 2009 L-Band Radar Devices BLL1214-250 Performance summary ­ ­ ­ ­ High power 250 W High , 35W driver transistor for BLL1214-250 High gain 13 dB Efficiency > 43 % Excellent ruggedness , cycle) BLL1214-250 250W typical @ 36V (1ms pulse 10% duty cycle) BLA6H1214-500 500W typical @ 50V (1ms
NXP Semiconductors
Original
Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLF87 BLF57 BLF6G27LS-135 IS-95 BLF6G27-135 BLF6G27S-45

BLA1011-300

Abstract: LDMOS , IFF, Mod-S LDMOS BLL1214-250 SOT502A 1200 - 1400 36 250 1000 10 13 50
NXP Semiconductors
Original
BLA1011-300 BLA0912-250 BLA1011-200 BLA1011-10 BLA1011-2 BLS6G3135S-120 LDMOS radar
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