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BLF578XRS,112 Ampleon RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4 visit Digikey Buy
BLF578XR,112 Ampleon RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4 visit Digikey Buy
BLF578,112 Ampleon RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4 visit Digikey Buy

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Part : BLF578,112 Supplier : AMP Manufacturer : Avnet Stock : - Best Price : $260.19 Price Each : $284.19
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BLF578 Datasheet

Part Manufacturer Description PDF Type
BLF578 NXP Semiconductors AN10882 - Dependency of BLF578 gate bias voltage on temperature Original
BLF578 NXP Semiconductors BLF578 LDMOS Transistor Model Original
BLF578 NXP Semiconductors AN10858 - 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Original
BLF578 NXP Semiconductors Power LDMOS transistor Original
BLF578 NXP Semiconductors LDMOS RF power transistor delivering 1000 W of CW output power Original
BLF578 NXP Semiconductors AN10800 - Using the BLF578 in the 88 MHz to 108 MHz FM band Original
BLF578 NXP Semiconductors AN10967 - BLF578 demo for 352 MHz 1kW CW power Original
BLF578,112 NXP Semiconductors BLF578 - Power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original
BLF578XR NXP Semiconductors Power LDMOS transistor Original
BLF578XR,112 NXP Semiconductors BLF578XR - Power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original
BLF578XRS NXP Semiconductors Power LDMOS transistor Original
BLF578XRS,112 NXP Semiconductors BLF578XRS - Power LDMOS transistor, SOT539B Package, Standard Marking, IC'S Tube - DSC Bulk Pack Original

BLF578

Catalog Datasheet MFG & Type PDF Document Tags

blf578

Abstract: AN10882 AN10882 Dependency of BLF578 gate bias voltage on temperature Rev. 01 - 17 December 2009 Application note Document information Info Content Keywords BLF578, HV LDMOS Abstract This application note describes the dependency of the BLF578 transistor gate bias voltage on junction temperature AN10882 NXP Semiconductors Dependency of BLF578 gate bias voltage on temperature Revision history , 2009 2 of 6 AN10882 NXP Semiconductors Dependency of BLF578 gate bias voltage on
NXP Semiconductors
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BLF578 NXP vhf ism

blf578

Abstract: sheet status Change notice Supersedes BLF578_2 20100204 Product data sheet - BLF578_1 , °C BLF578_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 â'" 4 , μA BLF578_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 â'" 4 , phases under the following conditions: VDS = 50 V; IDq = 40 mA; PL = 1200 W pulsed; f = 225 MHz. BLF578_2 , device) BLF578_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 â'" 4
NXP Semiconductors
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2002/95/EC

blf578

Abstract: BN-61-202 AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 - 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency , Abstract This application note describes the design and the performance of the BLF578 for Class-C CW , AN10800 NXP Semiconductors Using the BLF578 in the 88 MHz to 108 MHz FM band Revision history , 2009 2 of 23 AN10800 NXP Semiconductors Using the BLF578 in the 88 MHz to 108 MHz FM band
NXP Semiconductors
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BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574

BLF578

Abstract: EZ-141-AL-TP-M17 °C Tj junction temperature - 225 °C BLF578_1 Objective data sheet © NXP B.V , % BLF578_1 Objective data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 - 11 , 1200 W pulsed; f = 225 MHz. BLF578_1 Objective data sheet © NXP B.V. 2008. All rights , Fig 2. BLF578 electromigration (ID, total device) BLF578_1 Objective data sheet © NXP B.V , .2 drain ZL gate ZS 001aaf059 Fig 3. Definition of transistor impedance BLF578_1 Objective
NXP Semiconductors
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EZ-141-AL-TP-M17 semi rigid coax EZ-141-AL-TP-M17 rogers 5880 murata CAPACITOR 4.7

BLF578

Abstract: BLF574 AN10967 BLF578 352 MHz 1 kW demo board Rev. 1 - 23 March 2011 Application note Document information Info Content Keywords BLF578, high voltage LDMOS, 1 kW, broadcast, ISM Abstract Full 1 kW CW output power and an efficiency of 70 % can be reached with a BLF578 VHF power LDMOS , Semiconductors BLF578 352 MHz 1 kW demo board Revision history Rev Date Description v , BLF578 352 MHz 1 kW demo board 1. Introduction This application note describes the results of a
NXP Semiconductors
Original
UT90C-25 taconic 30RF35 transistor SMD 352 ATC100B RF35

BLF578

Abstract: AN10858 AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Rev. 02 - 26 March 2010 Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun , the 174 MHz to 230 MHz band using the BLF578 power transistor. The amplifier uses innovative planar , MHz DVB-T power amplfier with the BLF578 Revision history Rev Date 02 20100326 01 , Semiconductors 174 MHz to 230 MHz DVB-T power amplfier with the BLF578 1. Introduction Over the past few
NXP Semiconductors
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planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X

blf578

Abstract: BLF578 NXP BLF578_2 20100204 Product data sheet - BLF578_1 Modifications: BLF578_1 · · · · , 225 °C BLF578_2 Product data sheet © NXP B.V. 2010. All rights reserved. Rev. 02 - 4 , 1.8 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A BLF578_2 , = 40 mA; PL = 1200 W pulsed; f = 225 MHz. BLF578_2 Product data sheet © NXP B.V. 2010. All , Fig 3. BLF578 electromigration (ID, total device) BLF578_2 Product data sheet © NXP B.V
NXP Semiconductors
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BLF578*2 TDK4532X7R1E475Mt020U TRANSISTOR REPLACEMENT table for transistor

UT90C-25

Abstract: AN10967 BLF578 demo for 352 MHz 1kW CW power Rev. 2 â'" 20 November 2012 Application note Document information Info Content Keywords BLF578, high-voltage LDMOS, 1 kW, broadcast, ISM Abstract Full 1 kW CW output power and an efficiency of 70 % can be reached with a BLF578 VHF power , NXP Semiconductors BLF578 352 MHz 1 kW demo board Revision history Rev Date Description , Semiconductors BLF578 352 MHz 1 kW demo board 1. Introduction This application note describes the results
NXP Semiconductors
Original
Abstract: AN_BLF578 BLF578 LDMOS Transistor Model Rev. 01 â'" 25-09-2008 Application note Document information Info Content Keywords BLF578, BLF578, LDMOS, model Abstract This document describes the BLF578 LDMOS transistor model including its installation, usage and verification. AN_BLF578 NXP Semiconductors BLF578LDMOS transistor model Revision history Rev 01 D 20070613 , AN_BLF578 BLF578LDMOS transistor model Table of contents 1. 2. 3. 4. 5. 6. 6.1 6.2 6.3 7. 7.1 NXP Semiconductors
Original
Abstract: NXP LDMOS RF power transistor BLF578 LDMOS RF power transistor delivering 1000 W of CW output power Delivering 1000 W of CW output power with 26 dB of gain and 75% efficiency, this rugged LDMOS device is ideally suited for use in broadcast transmitters and industrial, scientific and medical (ISM , `` RF pumped lasers `` MRI scanners Synchrotrons The BLF578 easily delivers 1000 W CW output power , website. Multi-purpose RF amplifier line-up Support material Type BLF578 Equivalent Circuit NXP Semiconductors
Original

Pallet VHF Power Amplifier

Abstract: BLF578 1200W (BLF578) ­ Demo boards for FM and broadband applications ISM applications ­ BLF57x also , 26 70 0.13 0.31 > 13:1 @1000W BLF578 (pulsed) Typical Performance @ rated Power , Available Available BLF578 1200W (pulsed) PP SOT539A2 Available Q1 09 Q2 09
NXP Semiconductors
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Pallet VHF Power Amplifier Pallet VHF Power Amplifier TELEVISION BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors BLF87 BLF57 BLF6G27LS-135 IS-95 BLF6G27-135 BLF6G27S-45

SOT467C

Abstract: BLF578 BLF573 BLF573S BLF574 SOT467C SOT502A3 SOT502B SOT539A final BLF578 SOT539A 470-876
NXP Semiconductors
Original
BLF871 BLF881 BLF645 BLF888A SOT467C dvb_t sot979a BLF871S BLF881S BLF878

BLF188XRS

Abstract: BLF574XR,112 BLF544 BLF548 BLF571 BLF573 BLF573S BLF574 BLF574XR BLF574XRS BLF578 BLF578XR BLF578XRS BLF642
NXP Semiconductors
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BLF188XRS BLF574XR,112 ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600

filter for GPS spice

Abstract: BLF578 ­ Doherty 2007 ­ IC TFF1004HN 2008 ­ JESD204A 2009 ­ FM1kW (BLF578) (88108 MHz) 2009 ­ SiGe , BLF881(S) driver final final BLF571 BLF573(S) BLF574 final BLF578 final BLF645 , brb436 Function Type driver final final BLF571 BLF573S BLF574 final BLF578 , BGA7024 BGA7127 BGA7027 BGA7130* BGA7133* * = 3.1 50 VLDMOS BLF578 1000 W ­ LDMOS , driver final final final final BLF871(S) BLF881 BLF571 BLF573S BLF574 BLF578 BLF645
NXP Semiconductors
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filter for GPS spice diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE MPAL2731M15 RF20105 JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33

bgu7051

Abstract: sot-89 BV SMD TRANSISTOR MARKING CODE JESD204A 2009 ­ FM (88108 MHz) 1kW (BLF578) 2009 ­ SiGe:C BiCMOS QUBiC4Xi "RF 14 NXPRF , ) driver final final BLF571 BLF573(S) BLF574 final BLF578 final BLF645 final , final final BLF571 BLF573S BLF574 final BLF578 final BLF645 final final BLF 278 , : NXP50 VLDMOS BLF578:1000 W CW-LDMOS `` `` `` `` `` NXPRF14 37 1.6.7 , BLF571 BLF573S BLF574 BLF578 BLF645 frange (MHz) PL W Gp dB 0 - 1000 0 - 1000 0 -
NXP Semiconductors
Original
bgu7051 sot-89 BV SMD TRANSISTOR MARKING CODE MS1051 2SK163 BLF278 mosfet HF applications BFU610F RFBFR90 RFBFQ33 OM7670 PBR941 PBR951 PMBD353

blf188

Abstract: Infineon Power Management Selection Guide 2011 final BLF578 final BLF645 final BLF878 final BLF888 frange PL(AV) Gp , 20 50VLDMOS BLF578 1000 W ­ LDMOS BLF888 30 RF 12 Mode of operation 2
NXP Semiconductors
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blf188 Infineon Power Management Selection Guide 2011 BGU7073 MOSFET TOSHIBA 2015 bfg540 s-parameter RF MANUAL 19TH EDITION S-160PV BSR56 PMBFJ174 TFF11139HN BLP8G21S-162AV BSR57

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic ) driver BLF881 driver final final BLF571 BLF573S BLF574 final BLF578 final BLF645 , BLF578:1000 W CW - LDMOS BLF888: 30 NXP RF 12 Mode of operation 2-TONE; CW DVB-T 2
NXP Semiconductors
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BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G smd code marking ft sot23 RF LNB C band chipset BLT50 BLT70 BLT80 BLT81 BSR58 BSS83

blf578

Abstract: MRF6V2300N BLF578XR; BLF578XRS Power LDMOS transistor Rev. 1 - 30 January 2012 Objective data sheet 1 , applications BLF578XR; BLF578XRS NXP Semiconductors Power LDMOS transistor 2. Pinning information , BLF578XR_BLF578XRS drain-source voltage VGS junction temperature - 225 C All information , . All rights reserved. 2 of 11 BLF578XR; BLF578XRS NXP Semiconductors Power LDMOS , (DC) Fig 1. BLF578XR_BLF578XRS Objective data sheet Transient thermal impedance from
NXP Semiconductors
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MRF6V2300N ic tea 2025 radar amplifier s-band blf278 rf amplifier GaN ADS TEA 2025 equivalent CGD1040H CGD1042H CGD1044H CGD914 CGD923 CGD942C

BLF578XR

Abstract: BLF578 NXP )* BLF574XR(S)* BLF578XR(S) BLF6G13L(S)-250P BLF2425M6L(S)180P* BLF2425M7L(S)140* BLF2425M7L(S)200* BLF2425M7L(S)250P* HPA Final * 3.1 BLF578XR LDMOS 1400 W LDMOS HF 500 MHz BLF578 , BLF574XR(S)* BLF578 BLF578XR(S) BLF6G10(LS)-200RN BLF6G10(LS)-135RN BLF6G10(LS)-160RN BLF2425M6L(S)180P , BLF574XR(S)* BLF578 BLF578XR(S) BLF6G10(LS)-200RN BLF6G10(LS)-135RN BLF6G10(LS)-160RN BLF2425M7L(S)140 , LDMOS BLF578 1200 W - LDMOS `` `` `` `` `` 38 RF 16 1.6.5 2.5.1 RF
Philips Semiconductors
Original
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