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Part : BLF245,112 Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BLF245B,112 Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BLF245B112 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 552 Best Price : $85.77 Price Each : $105.56
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BLF245 Datasheet

Part Manufacturer Description PDF Type
BLF245 Advanced Semiconductor RF POWER MOSFET, N-Channel Enhancement Mode Original
BLF245 NXP Semiconductors VHF power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 15.5 dB Original
BLF245 NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original
BLF245 Philips Semiconductors VHF Power MOS Transistor Original
BLF245 Philips Semiconductors VHF Power MOS Transistor Original
BLF245 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BLF245 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BLF245 N/A FET Data Book Scan
BLF245,112 NXP Semiconductors VHF power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 15.5 dB; Package: SOT123A (CRFM4); Container: Blister pack Original
BLF245B NXP Semiconductors VHF push-pull power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 18 dB Original
BLF245B NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original
BLF245B Philips Semiconductors VHF push-pull power MOS transistor Original
BLF245B Philips Semiconductors VHF Push-Pull Power MOS Transistor Original
BLF245B Philips Semiconductors VHF Push-Pull Power MOS Transistor Original
BLF245B N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BLF245B N/A FET Data Book Scan
BLF245B,112 NXP Semiconductors VHF push-pull power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 18 dB; Package: SOT279A (CDFM4); Container: Blister pack Original
BLF245C Advanced Semiconductor Transistor Original
BLF245C Philips Semiconductors VHF power MOS transistor Original
BLF245C Philips Semiconductors VHF Push-Pull Power MOS Transistor Original

BLF245

Catalog Datasheet MFG & Type PDF Document Tags

blf245

Abstract: DISCRETE SEMICONDUCTORS DAT M3D065 BLF245 VHF power MOS transistor Product , VHF power MOS transistor BLF245 PIN CONFIGURATION FEATURES â'¢ High power gain â'¢ Low , VHF power MOS transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System , transistor BLF245 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER , Product specification VHF power MOS transistor BLF245 MGP168 6 MGP169 12 handbook
Philips Semiconductors
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MBB072 MSB057 SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B SCA75

philips ferroxcube 4c6

Abstract: Philips Application Note ECO6907 APPLICATION NOTE A wideband power amplifier (25 - 110 MHz) with the MOS transistor BLF245 , BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 , Semiconductors A wideband power amplifier (25 - 110 MHz) with the MOS transistor BLF245 1 Application , - 67 % input VSWR 1.6 2 INTRODUCTION The BLF245 is an RF power MOS transistor for , Semiconductors A wideband power amplifier (25 - 110 MHz) with the MOS transistor BLF245 Application Note
Philips Semiconductors
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NCO8602 philips ferroxcube 4c6 Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers philips toroid 4c6 ferroxcube 4C6 toroid core ECO6907 SCA57

BLF245

Abstract: SOT123 DISCRETE SEMICONDUCTORS DATA SHEET BLF245 VHF power MOS transistor Product specification , BLF245 PIN CONFIGURATION · High power gain · Low noise figure · Easy power control lfpage 1 , transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL , Semiconductors Product specification VHF power MOS transistor BLF245 CHARACTERISTICS Tj = 25 °C , Semiconductors Product specification VHF power MOS transistor BLF245 MGP170 0.8 MGP171 240
Philips Semiconductors
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SOT123 SOT123 Package MGP175

wirelesscommunication

Abstract: MGP175 DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF245 VHF power MOS transistor Product , VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION · High power gain · Low noise , MOS transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134 , Philips Semiconductors Product specification VHF power MOS transistor BLF245 CHARACTERISTICS , Semiconductors Product specification VHF power MOS transistor BLF245 MGP168 6 MGP169 12
Philips Semiconductors
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wirelesscommunication iec 947 156-1 philips catalog resistors Q 371 Transistor RF Transistor s-parameter vhf

MPA92

Abstract: 68W* transistor specification VHF power MOS transistor BLF245 PHILIPS INTERNATIONAL SbE D â  711062b 0043602 214 «PHIN , Product specification VHF power MOS transistor BLF245 "HILIPS INTERNATIONAL SbE D M 711Dö5b GD43ÃG3 , Semiconductors Product specification VHF power MOS transistor BLF245 PHILIPS INTERNATIONAL SbE T> 0,8 1 DS , MOS transistor BLF245 PWILIPS INTERNATIONAL ShE T> m 711062b 0043Ã0S T23 BIPHIN APPLICATION , in class-B operation The BLF245 is capable of withstanding a load mismatch corresponding to VSWR =
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OCR Scan
MPA92 68W* transistor 68w transistor International Power Sources GZ22 20J2 TBLF245 T-39-11
Abstract: F power MOS transistor BLF245 N AUER PHILIPS/DISCRETE FEATURES b=1E D PIN CONFIGURATION , VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b'lE D LIMITING VALUES In , ODETTSS 3fiE H A P X _ VHF power MOS transistor BLF245 f .l ] â' c'E > N AUER PHILIPS , specification VHF power MOS transistor BLF245 N AMER PHILIPS/DISCRETE MRA920 crs 25 ^ (PF) 20 , VHF power MOS transistor BLF245 N AMER PHILIPS/DISCRETE b'lE D APPLICATION INFORMATION FOR -
OCR Scan

BLW95

Abstract: TV power transistor datasheet 32 50 BLF242 BLF245B BLF368 300 32 100 BLF242 2 × BLF245 2 × BLF368 , 13 1 BFG35 BLW81 10 13 1 BFG35 BLF245(1) 12 12.5 1 BFG35 BLW29 , VOLTAGE (V) PowerMOS 150 BLF242(1) 2 × BLF244 - 12 12.5 150 BLF242(1) BLF245B - 12 12.5 500 BLF244(1) 2 × BLF245 - 60 28 100 BLF242(1) BLF245(1 , 13 S/F 1 BFG35 BLF245(1) - 12 12.5 F 35 45 BLW80 BLW29 - 14
Philips Semiconductors
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BLW83 BLV11 BLW77 BLW95 BLW50F BLF147 TV power transistor datasheet BFQ68 Applications RF Power Modules microwave rf transmitter BLY87C BLY89C BLV10 BLW87 BLY88C BLW60C

BLF245

Abstract: VHF transistor amplifier circuit transistor N AMER PHILIPS/DISCRETE BLF245 b^E T> FEATURES â'¢ High power gain â'¢ Low noise figure â , BLF245 N AtlER PHILIPS/DISCRETE h^E D LIMITING VALUES In accordance with the Absolute Maximum System , btiSBTBl 0DBT1SS 3fi2 HAPX Product specification VHF power MOS transistor BLF245 N AI1ER PHILIPS/DISCRETE , â¡DEc]EiSb Sll HAPX Product specification VHF power MOS transistor BLF245 N AMER PHILIPS/DISCRETE b^E , BLF245 N AMER PHILIPS/DISCRETE t, APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; R
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OCR Scan
VHF transistor amplifier circuit MBAJ79

"RF Power Modules"

Abstract: BLW85 BFG35 BLV10 8 13 1 BFG35 BLF245(1) 12 12.5 1 BFG35 BLV11 15 13 , 150 BLF242(1) 2 × BLF244 - 12 12.5 150 BLF242(1) BLF245B - 12 12.5 500 BLF244(1) 2 × BLF245 - 60 28 100 BLF242(1) BLF245(1) 2 × BLF246 150 , ) INPUT POWER (mW) 1st STAGE 2nd STAGE 3rd STAGE PowerMOS 1 BFG35 BLF245 - BASE , STAGE 3rd STAGE PowerMOS 5 BLF242 2 × BLF244 5 BLF242 BLF245B BLF348 40
Philips Semiconductors
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BLW85 BLF145 BLF175 bfq34 BLW33 bfg97 BLV20 BLW76 BLW97 BLW86 BLW96

BLF245

Abstract: MOSFET BLF245 SPECIFICATIONS BLF245 RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: PACKAGE STYLE .380 4L FLG · PG = 13 dB Typical at 175 MHz · 30:1 Load VSWR Capability · OmnigoldTM metalization system MAXIMUM RATINGS ID 6.0 A VDS 65 V VGS ±20 V PDISS 68 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +200 °C JC 1.8 °C/W
Advanced Semiconductor
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MOSFET BLF245 SPECIFICATIONS

sot123 package

Abstract: BLF543 65 RF/Microwave Devices RF Power MOS Transistors (cont.) Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) VHF BASE STATIONS (f = 25-175 MHz, Class B Operation) BLF241 BLF242 BLF244 BLF245 BLF245B BLF175 BLF246B BLF246 BLF276 BLF147 BLF177 BLF247B BLF277 BLF248 , 25-175 MHz, Class B Operation) BLF221 BLF241 BLF244 BLF245 BLF225 TO-39/3, metal can SOT-5/11, metal can , BLF244 BLF245 SOT-123, flange SOT-123, flange SOT-123, flange 5 15 30 28 28 28 400 400 400 13 typ 11 typ
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OCR Scan
BLF543 SOT-123 sot 123 flange BLF278 BLF521 BLF522 BLF542 BLF544

BLY32

Abstract: Philips Application BLX15 BLV33 PowerMOS 5 12 20 BLF2423' BLF2443» BLF2443 1 2 x BLF2443) 2 x BLF2453» 2 x BLF346 BLF348 2 x , BLF2423» BLF2423' BLF2422) 3) 2 x 2 x 2 x 2 x BLF2443* BLF2453' BLF346 BLF1753) BLF368 2 x BLF368 2 x , BLF2451' 12 60 150 12.5 28 28 1st Stage 2nd Stage 3rd Stage Pl (W) Supply Voltage (V) 2 , BLF245 BLF225 12 25 12.5 12.5 IV Base Stations (68 MHz - 87.5 MHz) Input Power (mW) Bipolar 65 65 , BLF245 BLF246 BLF147 30 80 150 28 28 28 1) Class A operation 2) 28 V supply in class A operation
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OCR Scan
BFQ268 BLY32 Philips Application BLX15 blf278 108 amplifier RF Power Amplifiers bgy55 blf177 108 amplifier OM3016 OM3026 OM925 OM975 OM976 BFQ231
Abstract: supply) BLF241 BLF242 BLF244 BLF245 BLF245B BLF245C BLF175 BLF246B BLF246 BLF276 BLF147 , supply) BLF221 BLF221B BLF241 BLF241E BLF244 BLF245 BLF225 2 2 2 2 6 12 30 12.5 -
OCR Scan
Abstract: BLF245 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)68# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ Thermal Resistance Junc-Case2.6 Thermal Resistance Junc-Amb. V(GS)th Max. (V)4.5 V(GS)th (V) (Min)2.0 @(VDS) (V) (Test Condition)10 @I(D) (A) (Test Condition)10m I(DSS) Max. (A)2.0m @V(DS) (V American Microsemiconductor
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motorola mrf

Abstract: MRF255 equivalent PRF134 BLF244 PRF136 BLF245 SA701 BLF245B SE701 DU2810S DU28120T DU28120U PRF136 ST704
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MRF151G DU1230P F1215 F1260 DU28200M SD701 motorola mrf MRF255 equivalent Motorola transistors MRF mrf184 mrf5015 F2012 MRF134 MRF136 MRF137 MRF141 MRF141G PRF137

SD1446

Abstract: SD2910 June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31 BLV33 BLV33F BLV36 BLV45/12 BLV58 BLV59 BLV62 BLV75/12 BLV80/28 BLV97CE BLV98CE BLV100 BLV101A BLV101B BLV103 BLV857 BLV861 BLV897 BLV935 BLV945A BLV945B BLV946 BLV947 BLV948 BLV950 BLV958
STMicroelectronics
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SD2910 SD1477 SD4575 BLX15 MX0912B350Y MX1011B400W SD1446 philips blx15 st cross reference STM961-15B SD2904 SD2918 SD2921 SD2900 SD2902

MDF-30

Abstract: MDF30 MDF30-R 30W - RF POWER AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. · · · · · · 87.5 ÷ 108 MHz 28 Volts Input/Output 50 - 50 Pout : 30 W Gain > 30 dB Driver Class A Output stage Class AB Devices: BLF245 or equivalent · · Dimensions (LxWxH): 73.5 x 59 x 17.8mm [2.89" x 2.32" x 0.7"] This picture is a mere example, it does not bind the provided product
RES Ingenium
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MDF-30 MDF30 54ALS03 class-A amplifier BLF245 equivalent GR00006

MDL-30-R

Abstract: CLASS AB MOSFET RF amplifier MDL30-R 30W - RF AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. · · · · · 87.5 ÷ 108 MHz 28 Volts Input / Output 50 - 50 Pout : 30 W Gain: 16 dB min. Class AB Devices: BLF245 Optional: 50 ÷120MHz in 30MHz segments Optional: Class A biasing · · · · Dimensions (LxWxH): 73.5 x 59 x 17.8mm [2.89" x 2.32" x 0.7"] This picture is a mere example, it does not bind the
RES Ingenium
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MDL-30-R CLASS AB MOSFET RF amplifier Richardson Electronics RF MOSFET CLASS AB 120MH GR00070

BLF188XRS

Abstract: BLF245 BLF246 BLF248 BLF278 BLF346 BLF368 BLF369 BLF3G21-30 BLF3G21-6 BLF404 BLF521 BLF542
NXP Semiconductors
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BLF188XRS ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600

SOT123 Package

Abstract: SOT123 BLF245 12 12.5 12 SOT123 BLF245B - 12.5 - SOT279 BLF225 30 12.5 , ) BLF242 5 28 16 SOT123 BLF244 15 28 17 SOT123 BLF245 30 28 15.5 SOT123 BLF245B 30 28 18 SOT279 BLF246B 60 28 19 SOT161 BLF246 80
Philips Semiconductors
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BFS22A SOT121 Package BFQ43 BLY93 BFQ43 datasheet BFS22 BLY87C/01 BLY88C/01 BLY91C BLY91C/01 BLV21 BLY92C
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