500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : BLF245B,112 Supplier : AMP Manufacturer : Avnet Stock : - Best Price : $83.3173 Price Each : $145.8053
Part : BLF245,112 Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BLF245B,112 Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BLF245B112 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 562 Best Price : $85.77 Price Each : $105.56
Shipping cost not included. Currency conversions are estimated. 

BLF245 Datasheet

Part Manufacturer Description PDF Type
BLF245 Advanced Semiconductor RF POWER MOSFET, N-Channel Enhancement Mode Original
BLF245 NXP Semiconductors VHF power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 15.5 dB Original
BLF245 NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original
BLF245 Philips Semiconductors VHF Power MOS Transistor Original
BLF245 Philips Semiconductors VHF Power MOS Transistor Original
BLF245 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BLF245 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BLF245 N/A FET Data Book Scan
BLF245,112 NXP Semiconductors VHF power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 15.5 dB; Package: SOT123A (CRFM4); Container: Blister pack Original
BLF245B NXP Semiconductors VHF push-pull power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 18 dB Original
BLF245B NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original
BLF245B Philips Semiconductors VHF push-pull power MOS transistor Original
BLF245B Philips Semiconductors VHF Push-Pull Power MOS Transistor Original
BLF245B Philips Semiconductors VHF Push-Pull Power MOS Transistor Original
BLF245B N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BLF245B N/A FET Data Book Scan
BLF245B,112 NXP Semiconductors VHF push-pull power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 65 %; Frequency: 175 MHz; Load power: 30 W; Operating voltage: 28 VDC; Power gain: 18 dB; Package: SOT279A (CDFM4); Container: Blister pack Original
BLF245C Advanced Semiconductor Transistor Original
BLF245C Philips Semiconductors VHF power MOS transistor Original
BLF245C Philips Semiconductors VHF Push-Pull Power MOS Transistor Original

BLF245

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DISCRETE SEMICONDUCTORS DAT M3D065 BLF245 VHF power MOS transistor Product , VHF power MOS transistor BLF245 PIN CONFIGURATION FEATURES â'¢ High power gain â'¢ Low , VHF power MOS transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System , transistor BLF245 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER , Product specification VHF power MOS transistor BLF245 MGP168 6 MGP169 12 handbook Philips Semiconductors
Original
MBB072 MSB057 SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B SCA75
Abstract: APPLICATION NOTE A wideband power amplifier (25 - 110 MHz) with the MOS transistor BLF245 , BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 , Semiconductors A wideband power amplifier (25 - 110 MHz) with the MOS transistor BLF245 1 Application , - 67 % input VSWR 1.6 2 INTRODUCTION The BLF245 is an RF power MOS transistor for , Semiconductors A wideband power amplifier (25 - 110 MHz) with the MOS transistor BLF245 Application Note Philips Semiconductors
Original
NCO8602 philips ferroxcube 4c6 Philips Application Note ECO6907 philips toroid 4c6 ferroxcube 4C6 toroid core ECO6907 SCA57
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BLF245 VHF power MOS transistor Product specification , BLF245 PIN CONFIGURATION · High power gain · Low noise figure · Easy power control lfpage 1 , transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL , Semiconductors Product specification VHF power MOS transistor BLF245 CHARACTERISTICS Tj = 25 °C , Semiconductors Product specification VHF power MOS transistor BLF245 MGP170 0.8 MGP171 240 Philips Semiconductors
Original
MGP175 SOT123 SOT123 Package
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF245 VHF power MOS transistor Product , VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION · High power gain · Low noise , MOS transistor BLF245 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134 , Philips Semiconductors Product specification VHF power MOS transistor BLF245 CHARACTERISTICS , Semiconductors Product specification VHF power MOS transistor BLF245 MGP168 6 MGP169 12 Philips Semiconductors
Original
wirelesscommunication iec 947 156-1 philips catalog resistors Q 371 Transistor RF Transistor s-parameter vhf
Abstract: specification VHF power MOS transistor BLF245 PHILIPS INTERNATIONAL SbE D â  711062b 0043602 214 «PHIN , Product specification VHF power MOS transistor BLF245 "HILIPS INTERNATIONAL SbE D M 711Dö5b GD43ÃG3 , Semiconductors Product specification VHF power MOS transistor BLF245 PHILIPS INTERNATIONAL SbE T> 0,8 1 DS , MOS transistor BLF245 PWILIPS INTERNATIONAL ShE T> m 711062b 0043Ã0S T23 BIPHIN APPLICATION , in class-B operation The BLF245 is capable of withstanding a load mismatch corresponding to VSWR = -
OCR Scan
MPA92 68W* transistor 68w transistor P101 International Power Sources GZ22 TBLF245 T-39-11
Abstract: F power MOS transistor BLF245 N AUER PHILIPS/DISCRETE FEATURES b=1E D PIN CONFIGURATION , VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b'lE D LIMITING VALUES In , ODETTSS 3fiE H A P X _ VHF power MOS transistor BLF245 f .l ] â' c'E > N AUER PHILIPS , specification VHF power MOS transistor BLF245 N AMER PHILIPS/DISCRETE MRA920 crs 25 ^ (PF) 20 , VHF power MOS transistor BLF245 N AMER PHILIPS/DISCRETE b'lE D APPLICATION INFORMATION FOR -
OCR Scan
Abstract: 32 50 BLF242 BLF245B BLF368 300 32 100 BLF242 2 × BLF245 2 × BLF368 , 13 1 BFG35 BLW81 10 13 1 BFG35 BLF245(1) 12 12.5 1 BFG35 BLW29 , VOLTAGE (V) PowerMOS 150 BLF242(1) 2 × BLF244 - 12 12.5 150 BLF242(1) BLF245B - 12 12.5 500 BLF244(1) 2 × BLF245 - 60 28 100 BLF242(1) BLF245(1 , 13 S/F 1 BFG35 BLF245(1) - 12 12.5 F 35 45 BLW80 BLW29 - 14 Philips Semiconductors
Original
BLW83 BLV11 BLW77 BLW95 BLW50F BLF147 TV power transistor datasheet BFQ68 Applications RF Power Modules microwave rf transmitter BLY87C BLY89C BLV10 BLW87 BLY88C BLW60C
Abstract: transistor N AMER PHILIPS/DISCRETE BLF245 b^E T> FEATURES â'¢ High power gain â'¢ Low noise figure â , BLF245 N AtlER PHILIPS/DISCRETE h^E D LIMITING VALUES In accordance with the Absolute Maximum System , btiSBTBl 0DBT1SS 3fi2 HAPX Product specification VHF power MOS transistor BLF245 N AI1ER PHILIPS/DISCRETE , â¡DEc]EiSb Sll HAPX Product specification VHF power MOS transistor BLF245 N AMER PHILIPS/DISCRETE b^E , BLF245 N AMER PHILIPS/DISCRETE t, APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; R -
OCR Scan
VHF transistor amplifier circuit MBAJ79
Abstract: BFG35 BLV10 8 13 1 BFG35 BLF245(1) 12 12.5 1 BFG35 BLV11 15 13 , 150 BLF242(1) 2 × BLF244 - 12 12.5 150 BLF242(1) BLF245B - 12 12.5 500 BLF244(1) 2 × BLF245 - 60 28 100 BLF242(1) BLF245(1) 2 × BLF246 150 , ) INPUT POWER (mW) 1st STAGE 2nd STAGE 3rd STAGE PowerMOS 1 BFG35 BLF245 - BASE , STAGE 3rd STAGE PowerMOS 5 BLF242 2 × BLF244 5 BLF242 BLF245B BLF348 40 Philips Semiconductors
Original
BLW85 BLW86 BLF145 BLF175 bfq34 BLW33 BLV20 BLW76 BLW97 BLW96
Abstract: BLF245 RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: PACKAGE STYLE .380 4L FLG · PG = 13 dB Typical at 175 MHz · 30:1 Load VSWR Capability · OmnigoldTM metalization system MAXIMUM RATINGS ID 6.0 A VDS 65 V VGS ±20 V PDISS 68 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +200 °C JC 1.8 °C/W Advanced Semiconductor
Original
MOSFET BLF245 SPECIFICATIONS
Abstract: 65 RF/Microwave Devices RF Power MOS Transistors (cont.) Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) VHF BASE STATIONS (f = 25-175 MHz, Class B Operation) BLF241 BLF242 BLF244 BLF245 BLF245B BLF175 BLF246B BLF246 BLF276 BLF147 BLF177 BLF247B BLF277 BLF248 , 25-175 MHz, Class B Operation) BLF221 BLF241 BLF244 BLF245 BLF225 TO-39/3, metal can SOT-5/11, metal can , BLF244 BLF245 SOT-123, flange SOT-123, flange SOT-123, flange 5 15 30 28 28 28 400 400 400 13 typ 11 typ -
OCR Scan
BLF543 flange sot 123 SOT-123 BLF278 BLF521 BLF522 BLF542 BLF544
Abstract: BLV33 PowerMOS 5 12 20 BLF2423' BLF2443» BLF2443 1 2 x BLF2443) 2 x BLF2453» 2 x BLF346 BLF348 2 x , BLF2423» BLF2423' BLF2422) 3) 2 x 2 x 2 x 2 x BLF2443* BLF2453' BLF346 BLF1753) BLF368 2 x BLF368 2 x , BLF2451' 12 60 150 12.5 28 28 1st Stage 2nd Stage 3rd Stage Pl (W) Supply Voltage (V) 2 , BLF245 BLF225 12 25 12.5 12.5 IV Base Stations (68 MHz - 87.5 MHz) Input Power (mW) Bipolar 65 65 , BLF245 BLF246 BLF147 30 80 150 28 28 28 1) Class A operation 2) 28 V supply in class A operation -
OCR Scan
BLY32 blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blf177 108 amplifier OM3016 OM3026 OM925 OM975 OM976 BFQ231
Abstract: supply) BLF241 BLF242 BLF244 BLF245 BLF245B BLF245C BLF175 BLF246B BLF246 BLF276 BLF147 , supply) BLF221 BLF221B BLF241 BLF241E BLF244 BLF245 BLF225 2 2 2 2 6 12 30 12.5 -
OCR Scan
Abstract: BLF245 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)68# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200Ãu Thermal Resistance Junc-Case2.6 Thermal Resistance Junc-Amb. V(GS)th Max. (V)4.5 V(GS)th (V) (Min)2.0 @(VDS) (V) (Test Condition)10 @I(D) (A) (Test Condition)10m I(DSS) Max. (A)2.0m @V(DS) (V American Microsemiconductor
Original
Abstract: PRF134 BLF244 PRF136 BLF245 SA701 BLF245B SE701 DU2810S DU28120T DU28120U PRF136 ST704 -
Original
MRF151G DU1230P F1215 F1260 DU28200M SD701 MRF255 equivalent motorola mrf Motorola transistors MRF mrf5015 mrf184 F2012 MRF134 MRF136 MRF137 MRF141 MRF141G PRF137
Abstract: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31 BLV33 BLV33F BLV36 BLV45/12 BLV58 BLV59 BLV62 BLV75/12 BLV80/28 BLV97CE BLV98CE BLV100 BLV101A BLV101B BLV103 BLV857 BLV861 BLV897 BLV935 BLV945A BLV945B BLV946 BLV947 BLV948 BLV950 BLV958 STMicroelectronics
Original
SD2910 SD4575 BLX15 MX0912B350Y MX1011B400W SD1446 philips blx15 st cross reference STM961-15B SD2904 SD2918 SD2921 SD2900 SD2902
Abstract: MDF30-R 30W - RF POWER AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. · · · · · · 87.5 ÷ 108 MHz 28 Volts Input/Output 50 - 50 Pout : 30 W Gain > 30 dB Driver Class A Output stage Class AB Devices: BLF245 or equivalent · · Dimensions (LxWxH): 73.5 x 59 x 17.8mm [2.89" x 2.32" x 0.7"] This picture is a mere example, it does not bind the provided product RES Ingenium
Original
MDF-30 MDF30 54ALS03 BLF245 equivalent class-A amplifier GR00006
Abstract: MDL30-R 30W - RF AMPLIFIER Designed for FM radio transposers and transmitters, this amplifier incorporates microstrip technology and MOSFET to enhance ruggedness and reliability. · · · · · 87.5 ÷ 108 MHz 28 Volts Input / Output 50 - 50 Pout : 30 W Gain: 16 dB min. Class AB Devices: BLF245 Optional: 50 ÷120MHz in 30MHz segments Optional: Class A biasing · · · · Dimensions (LxWxH): 73.5 x 59 x 17.8mm [2.89" x 2.32" x 0.7"] This picture is a mere example, it does not bind the RES Ingenium
Original
MDL-30-R CLASS AB MOSFET RF amplifier Richardson Electronics RF MOSFET CLASS AB 120MH GR00070
Abstract: BLF245 BLF246 BLF248 BLF278 BLF346 BLF368 BLF369 BLF3G21-30 BLF3G21-6 BLF404 BLF521 BLF542 NXP Semiconductors
Original
BLF188XRS ADS-2009 BLA0912-250 BLA6G1011-200R BLA6H0912-500 BLA6H0912L-1000 BLA6H1011-600
Abstract: BLF245 12 12.5 12 SOT123 BLF245B - 12.5 - SOT279 BLF225 30 12.5 , ) BLF242 5 28 16 SOT123 BLF244 15 28 17 SOT123 BLF245 30 28 15.5 SOT123 BLF245B 30 28 18 SOT279 BLF246B 60 28 19 SOT161 BLF246 80 Philips Semiconductors
Original
BFS22A SOT121 Package BFQ43 BLY93 BFQ43 datasheet bfq34 application note BLY87C/01 BLY88C/01 BLY91C BLY91C/01 BLV21 BLY92C
Showing first 20 results.