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Part : BLF244,112 Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
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BLF244/B

Catalog Datasheet MFG & Type PDF Document Tags

BUZ90af

Abstract: hv82 BF1005 BLF244/B BS 107 BS 108 BS 170 BS 250 BSP149 BSP17 . . -, P- P- P- P- P- P
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BUZ90af hv82 MGF4919G-01 MGF4919G BUZ80AF1 MGF2407A-01 BLF244/B SO-20

BLW95

Abstract: TV power transistor datasheet 500 50 F 40 BLV20(2) 4 × BLW50F 8 × BLW96 1200 50 F 15 BLF244(1) 2 , BLF244(2) 2 × BLF177 - 300 50 - 60 BLF246(1) 4 × BLF147 - 550 28 - , BLF244(1) BLW85 45 13 90 BLF244(1) BLV75/12 75 13 150 BLV10 BLV75/12 , BLF242 BLF246 - 80 28 - 150 BLF244 BLF147 - 150 28 - PL (W , PowerMOS 240 BLF244 BLF248 - 300 28 - 120 BLF244(1) BLF278 - 300 50
Philips Semiconductors
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BLW83 BLV11 BLW77 BLW95 TV power transistor datasheet BFQ68 Applications RF Power Modules microwave rf transmitter blv862 BLY87C BLY89C BLW87 BLY88C BLW60C

BLF244

Abstract: MGP160 DISCRETE SEMICONDUCTORS DATA SHEET BLF244 VHF power MOS transistor Product specification , BLF244 PIN CONFIGURATION · High power gain · Low noise figure · Easy power control · Good , Philips Semiconductors Product specification VHF power MOS transistor BLF244 LIMITING VALUES , VHF power MOS transistor BLF244 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL , transistor BLF244 MGP154 2 MGP155 160 handbook, halfpage handbook, halfpage C (pF
Philips Semiconductors
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MGP160 MBB072 MSB057
Abstract: DISCRETE SEMICONDUCTORS DAT M3D065 BLF244 VHF power MOS transistor Product , VHF power MOS transistor BLF244 PIN CONFIGURATION FEATURES â'¢ High power gain â'¢ Low , transistor BLF244 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). , Semiconductors Product specification VHF power MOS transistor BLF244 CHARACTERISTICS Tj = 25 °C , . 2.0 MIN. 2.1 O MAX. 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C 2.2 2.3 Philips Semiconductors
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SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B SCA75

BLF244

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF244 VHF power MOS transistor Product , VHF power MOS transistor FEATURES BLF244 PIN CONFIGURATION · High power gain · Low noise , BLF244 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL , specification VHF power MOS transistor BLF244 CHARACTERISTICS Tj = 25 °C unless otherwise specified , MIN. MAX. A 2.0 MIN. 2.1 MAX. O 3.3 3.4 B 2.1 2.2 P 3.4
Philips Semiconductors
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Transistor BLF244

Abstract: philips Trimmer 60 pf are available on request. PINNING -SOT123 BLF244 N AMER PHILIPS/DISCRETE blE ]> PIN CONFIGURATION , transistor BLF244 N amer PHILIPS/DISCRETE b^E D LIMITING VALUES In accordance with the Absolute Maximum , OOST^Mb 37T WÃAPX Product specification VHF power MOS transistor BLF244 N AHER PHILIPS/DISCRETE LIE D , BLF244 - N A PIER PHILIPS/DISCRETE b^E D 7Z21763. 1 R DS (on) 1 , transistor BLF244 N AMER PHILIPS/DISCRETE blE T> APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C
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Transistor BLF244 philips Trimmer 60 pf bje 133 resistor capacitor 104 ceramic pu enamelled copper wire 7Z21784

ferroxcube 4C6 toroid core

Abstract: philips 4b1 ferrite rod APPLICATION NOTE A wideband 30 W push-pull amplifier with two MOS transistors BLF244 (VDS = 28 , with two MOS Application Note transistors BLF244 (VDS = 28 V); range 25 - 110 MHz NCO8701 CONTENTS , W push-pull amplifier with two MOS transistors BLF244 (VDS = 28 V); range 25 - 110 MHz 1 , frequency range 25-110 MHz. The design is based on the BLF244, a silicon N-channel enhancement mode , is depicted in Fig.1. BLF244 handbook, full pagewidth 1:1 50 RF INPUT MATCHING +
Philips Semiconductors
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ferroxcube 4C6 toroid core philips 4b1 ferrite rod Philips Application Note ECO6907 philips toroid 4c6 4C6 toroid Design of H.F. Wideband Power Transformers SCA57

"RF Power Modules"

Abstract: BLW85 1200 50 F 15 BLF244(1) 2 × BLF246 - 150 28 - 30 BLF145(1) 2 × BLF147 - 300 28 - 15 BLF244(2) 2 × BLF177 - 300 50 - 60 BLF246(1 , 30 BLF244(1) BLW85 45 13 Note 1. PowerMOS transistor. 2000 Mar 02 2 Philips , ) Stud S Flange F PowerMOS 80 BLF242 BLF246 - 80 28 - 150 BLF244 BLF147 , BLF244 BLF248 - 300 28 - 120 BLF244(1) BLF278 - 300 50 - 240
Philips Semiconductors
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BLF175 bfq34 BLW33 bfg97 blf2043 BLW76 BLW97 BLW86 BLV2042 BLV2044

bje 133 resistor

Abstract: transistor â'" ^ BLF244 i FEATURES N AMER PHILIPS/]) ISCRETE b*]E B PIN CONFIGURATION , bbS3T31 DOSTUMS 433 APX Product specification VHF power MOS transistor BLF244 N AMER PHILIPS/DISCRETE b 'lE LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). , junction temperature - 200 °C up to 1 ^ = 25 °C THERMAL RESISTANCE SYMBOL ^th j-m b m-h b September 1992 PARAMETER CONDITIONS THERMAL RESISTANCE thermal resistance from
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7Z21692 7Z21783
Abstract: 50 V supply) BLF242 BLF244 BLF145 BLF175 BLF246 2 4 8 8 20 28 28 28 50 28 RF , SOT5 SOT123 SOT 123 SOT 123 VHF base stations (f = 25 - 175 MHz, class B operation, 28 V & 50 V supply) BLF241 BLF242 BLF244 BLF245 BLF245B BLF245C BLF175 BLF246B BLF246 BLF276 BLF147 , > 19.1 ) 12 14 13.1 ) 20 VHF mobile transmitters (f = 25 - 175 MHz, class B operation, 12.5 V supply) BLF221 BLF221B BLF241 BLF241E BLF244 BLF245 BLF225 2 2 2 2 6 12 30 12.5 -
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BLF247B BLF277

sot123 package

Abstract: BLF543 25-175 MHz, Class B Operation) BLF221 BLF241 BLF244 BLF245 BLF225 TO-39/3, metal can SOT-5/11, metal can , (W) V DS (V) f (MHz) Source Gain (dB) VHF BASE STATIONS (f = 25-175 MHz, Class B Operation) BLF241 BLF242 BLF244 BLF245 BLF245B BLF175 BLF246B BLF246 BLF276 BLF147 BLF177 BLF247B BLF277 BLF248 , 175 10 10 15 typ 12 typ 8.5 UHF BASE STATIONS (f = 100-500 MHz, Class B Operation) BLF521 BLF522 , 500 10 10 10 12 11 11 11 11 10 9 UHF BASE STATIONS (f = 225-400 MHz, Class B Operation) BLF242
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BLF543 sot123 package SOT-123 sot 123 flange BLF542 BLF544 BLF544B BLF545 BLF546

ferroxcube 4322 020 97171

Abstract: philips ferroxcube 4c6 APPLICATION NOTE Linear performance of BLF244 in S.S.B. class-A operation NCO8704 Philips Semiconductors Linear performance of BLF244 in S.S.B. class-A operation CONTENTS 1 , 2 Application Note NCO8704 Philips Semiconductors Linear performance of BLF244 in S.S.B , measurements carried out on the BLF244 in S.S.B. Class-A operation. Linear measurements have been performed on , Semiconductors Linear performance of BLF244 in S.S.B. class-A operation 5 Application Note NCO8704
Philips Semiconductors
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NCO8705 ferroxcube 4322 020 97171 philips ferroxcube 4c6 philips toroidal transformer 2222 852 47103 PHILIPS toroidal core 4322 020 97171 R150C

SOT123 Package

Abstract: SOT123 stability â'¢ Withstands full load mismatch â'¢ Gold metallization ensures excellent reliability. BLF244 , specification VHF power MOS transistor BLF244 PHILIPS INTERNATIONAL 5bE D â  7110fl2b 00M37«i3 Mfil MIPHIN , VHF power MOS transistor BLF244 PHILIPS INTERNATIONAL 5bE D â  711002b DD43714 316 m , values. BLF244 711DB2b DQMBTIS HS4 BIPHIN Tâ'"39â'"11 Vqs = 0; f = 1 MHz. Rg.7 Input and , transistor BLF244 rx, xps InternatioNAL SLE D â  tiiq&E^ DOHa?«^ no HIPHIN APPLICATION INFORMATION FOR
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SOT123 International Power Sources T-39-11

IDG-500

Abstract: BLF244 MOS transistors BLF244 NCO8702 Philips Semiconductors Performance of 30 W push-pull amplifier for freq. range 25 - 110 MHz with 2 MOS transistors BLF244 CONTENTS 1 INTRODUCTION 2 , MHz with 2 MOS transistors BLF244 1 Application note NCO8702 INTRODUCTION In application , for freq. range 25 - 110 MHz with 2 MOS transistors BLF244 MGP969 0 handbook, halfpage , MHz with 2 MOS transistors BLF244 MGP967 0 handbook, halfpage Idq = 50 mA; f = 90 MHz Idq
Philips Semiconductors
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IDG-500 idg 500

BLY32

Abstract: Philips Application BLX15 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application B & W high , ) Supply Voltage (V) Stud S Flange F BLW78 BLX15 BLW95 PowerMOS 30 80 150 BLF241 BLF242 BLF244 , Flange F PowerMOS 240 120 240 320 BLF244 BLF2442' BLF2442 1 BLF175 BLF248 BLF278 2 x BLF278 4 x , ) Input Power (mW) PowerMOS 100 80 120 BLF242 BLF244 BLF2422' BLF246 BLF147 BLF278 20 35 75 28 28 50 , 110 MHz) Input Power (mW) PowerlVIOS 150 500 100 BLF242 BLF2441 1 BLF2421 1 2 x BLF244 2 x BLF245
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BFQ268 BLY32 Philips Application BLX15 blf278 108 amplifier RF Power Amplifiers bgy55 blf177 108 amplifier OM3016 OM3026 OM925 OM975 OM976 BFQ231

107 diode

Abstract: RF 107 970617 01 SIDA: 1/9 ELFA artikelnr. 71-107-45 BLF244 effekt RF-trans 970617 01 SIDA: 2/9 970617 01 SIDA: 3/9 970617 01 SIDA: 4/9 970617 01 SIDA: 5/9 970617 01 SIDA: 6/9 970617 01 SIDA: 7/9 970617 01 SIDA: 8/9 970617 01 SIDA: 9/9 ELFA
ELFA
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107 diode RF 107 diode 107 RF Transistors

SOT123 Package

Abstract: SOT123 distortion d3, d5 < -40 dB BLF242 2 28 23 SOT123 BLF244 4 28 23 SOT123 BLF145 , (TO-39/3) BLF241 2 12.5 12.5 SOT5 (TO-39/1) BLF244 6 12.5 15 SOT123 , ) BLF242 5 28 16 SOT123 BLF244 15 28 17 SOT123 BLF245 30 28 15.5 , 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road
Philips Semiconductors
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BFS22A SOT121 Package BFQ43 BLY93 BFQ43 datasheet BFS22 BLY87C/01 BLY88C/01 BLY91C BLY91C/01 BLV21 BLY92C

motorola mrf

Abstract: MRF255 equivalent PRF134 BLF244 PRF136 BLF245 SA701 BLF245B SE701 DU2810S DU28120T DU28120U PRF136 ST704
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MRF151G DU1230P F1215 F1260 DU28200M SD701 motorola mrf MRF255 equivalent Motorola transistors MRF mrf184 mrf5015 F2012 MRF134 MRF136 MRF137 MRF141 MRF141G PRF137

VDMOS

Abstract: BLF878 BLF245 SOT123A BLF244 SOT123A BLF242 SOT123A BLF202 SOT409A Matching (V) (W) 470-860 , @ 500 11.5 @ 500 70 70 70 55 60 60 60 60 55 - AB AB AB B B B B B AB , @ 175 13 @ 175 47 62 55 65 65 65 67 65 60 55 -28 -52 - AB AB AB AB B AB B B B B B LDMOS VDMOS VDMOS VDMOS VDMOS VDMOS VDMOS VDMOS VDMOS VDMOS VDMOS * See , -35 Class Die technlogy B C B B B AB VDMOS VDMOS VDMOS VDMOS VDMOS VDMOS
NXP Semiconductors
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BLF878 BLF871 BLF861A BLF647 BLF2045 BLF1822-10 VDMOS BLF574 SOT171A BLC573
Abstract: BLF244 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)38# Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ Thermal Resistance Junc-Case4.6 Thermal Resistance Junc-Amb. V(GS)th Max. (V)4.5 V(GS)th (V) (Min)2.0 @(VDS) (V) (Test Condition)10 @I(D) (A) (Test Condition)5.0m I(DSS) Max. (A)1.0m @V(DS) (V American Microsemiconductor
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