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Part : BLF177,112 Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BLF177CR112 Supplier : NXP Semiconductors Manufacturer : Rochester Electronics Stock : 18 Best Price : - Price Each : -
Part : BLF177,112 Supplier : NXP Semiconductors Manufacturer : Ameya Holding Stock : - Best Price : $0.4250 Price Each : $0.52
Part : BLF177 Supplier : NXP Semiconductors Manufacturer : Farnell element14 Stock : - Best Price : £41.03 Price Each : £50.87
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BLF177 Datasheet

Part Manufacturer Description PDF Type
BLF177 NXP Semiconductors HF/VHF power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 70 %; Frequency: 28 - 108 MHz; Load power: 150 W; Operating voltage: 50 VDC; Power gain: 19 dB Original
BLF177 NXP Semiconductors A wideband linear power amplifier (1.6 - 28 MHz) for 300 W PEP with 2 MOS transistors BLF177 Original
BLF177 NXP Semiconductors PHILIPS VDMOS RF-POWER TRANSISTORS CROSS REFERENCE LIST PHILIPS VDMOS vs MOTOROLA TMOS TRANSISTORS Original
BLF177 Philips Semiconductors HF-VHF power MOS transistor Original
BLF177 Philips Semiconductors HF/VHF Power MOS Transistor Original
BLF177 Philips Semiconductors HF/VHF Power MOS Transistor Original
BLF177 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BLF177 N/A FET Data Book Scan
BLF177 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
BLF177 Philips Components Datasheet Library 1989 Scan
BLF177,112 NXP Semiconductors HF/VHF power MOS transistor - Application: Broadcast and VHF Communication transmitters ; Description: VHF VDMOS RF POWER Transistor ; Efficiency: 70 %; Frequency: 28 - 108 MHz; Load power: 150 W; Operating voltage: 50 VDC; Power gain: 19 dB; Package: SOT121B (CRFM4); Container: Blister pack Original
BLF177CR,112 Philips Semiconductors RF FETs, Discrete Semiconductor Products, TRANSISTOR RF DMOS SOT121B Original

BLF177

Catalog Datasheet MFG & Type PDF Document Tags

HF power amplifier blf177

Abstract: blf177 108 amplifier with the aid of a computer model of the BLF177. Table 1 shows the calculated gain and impedances for , 25 °C Th = 70 °C -30 -40 0 10 20 30 f (MHz) 40 2 × BLF177. VDS = 50 V , (MHz) 40 2 × BLF177. VDS = 50 V. IDQ = 1A. PO = 300 W. Fig.19 3rd harmonics versus , 30 f (MHz) 40 2 × BLF177. VDS = 50 V. IDQ = 1A. PO = 300 W. Fig.20 2nd harmonics , MHz 20 MHz 20 15 0 100 200 300 400 Pout (W) 2 × BLF177. VDS = 50 V. IDQ =
Philips Semiconductors
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NCO8703 NC08703 HF power amplifier blf177 blf177 108 amplifier philips ferroxcube 4c6 philips toroid 4c6 MGM404 SCA57

BLF177

Abstract: mexico Ceramic capacitor 105 DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product , specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION · High power gain · , BLF177 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL , Semiconductors Product specification HF/VHF power MOS transistor BLF177 CHARACTERISTICS Tj = 25 °C , values. Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177
Philips Semiconductors
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mexico Ceramic capacitor 105 MBK-408 MBB072 MLA876 SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B SCA60

BLF177

Abstract: 8830 transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product , HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION · High power gain · Low , Semiconductors Product specification HF/VHF power MOS transistor BLF177 LIMITING VALUES In , Product specification HF/VHF power MOS transistor BLF177 CHARACTERISTICS Tj = 25 °C unless , BLF177 MGP090 MGP091 30 0 handbook, halfpage handbook, halfpage T.C. ID (A
Philips Semiconductors
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8830 transistor transistor marking code HF SCA76 R02/05/

BLF177,112

Abstract: transistor list specification BLF177_4 BLF177_3 BLF177_CNV_2 - BLF177_5 (9397 750 14416) BLF177_4 (9397 750 11579) BLF177_3 (9397 750 04059) BLF177_CNV_2 (9397 750 xxxxx) 20041217 20030721 19980702 19971216 Please be aware , Revision history Revision history Document ID BLF177_N_6 Modifications: Release date 20070124 Data sheet status Product data sheet Change notice Supersedes BLF177_5 · · · · correction made to figure title , : salesaddresses@nxp.com Date of release: 24 January 2007 Document identifier: BLF177_N_6 Rev. 06 - 24 January 2007
Philips Semiconductors
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transistor list BLF177C NXPBLF177 TRIMMER cap no-2222 809 07015 sot121B package 771-BLF177

BLF177

Abstract: MGP100 DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product specification , specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION · High power gain · , transistor BLF177 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL , . 3 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 , BLF177 MBK408 1200 MGP092 400 handbook, halfpage handbook, halfpage C (pF) RDS(on
Philips Semiconductors
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MGP100 727 Transistor power values 2222 632 series capacitor 2222 122 capacitor philips SOT121 Package 2222 852 47103

C5 MARKING TRANSISTOR

Abstract: blf177nxp Supersedes BLF177_N_6 20070124 Product data sheet - BLF177_5 Modifications: · · · · , page 13 correction made to figure note of Fig.20 BLF177_5 (9397 750 14416) 20041217 Product specification - BLF177_4 BLF177_4 (9397 750 11579) 20030721 Product specification - BLF177_3 BLF177_3 (9397 750 04059) 19980702 Product specification - BLF177_CNV_2 BLF177_CNV_2 , of release: 24 January 2007 Document identifier: BLF177_N_6 Rev. 06 - 24 January 2007 19 of 19
Philips Semiconductors
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C5 MARKING TRANSISTOR blf177nxp Philips 2222-030

transistor dk qq

Abstract: DISCRETE SEMICONDUCTORS [Mm SMEET BLF177 HF/VHF power MOS transistor Product specification , stability · Withstands full load mismatch. PIN CONFIGURATION BLF177 APPLICATIONS · Designed for , 200 BLF177 UNIT V V A W °C °c THERMAL CHARACTERISTICS SYMBOL ^th j-mb Rth mb-h PARAMETER , CHARACTERISTICS Tj = 25 °C unless otherwise specified. BLF177 SYMBOL V(BR)DSS !dss Igss VGSth AV qs 9is , HF/VHF power MOS transistor BLF177 M G P 092 M B K 408 l D = 5 A ; V qs = 10 V. V qs =
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OCR Scan
transistor dk qq

Philips 2222 capacitor

Abstract: philips capacitor ific a tio n HF/VHF power MOS transistor ^ â'" BLF177 N AMER PHILIPS/DISCRETE b^E D , transistor BLF177 blE D N AUER PHILIPS/DISCRETE LIMITING VALUES In accordance with the Absolute , specification HF/VHF power MOS transistor BLF177 - N AMER PHILIPS/DISCRETE , power MOS transistor BLF177 N AUER PHILIPS/DISCRETE f .l D c'E Ma s c se 1200 C (pF , * A P X Product specification HF/VHF power MOS transistor BLF177 N AUER PHILIPS/DISCRETE
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OCR Scan
Philips 2222 capacitor philips capacitor 7Z22996
Abstract: Supersedes BLF177_N_6 20070124 Product data sheet - BLF177_5 Modifications: â'¢ â'¢ â , made to note 2 on page 13 correction made to figure note of Fig.20 BLF177_5 (9397 750 14416) 20041217 Product specification - BLF177_4 BLF177_4 (9397 750 11579) 20030721 Product specification - BLF177_3 BLF177_3 (9397 750 04059) 19980702 Product specification - BLF177_CNV_2 BLF177_CNV_2 (9397 750 xxxxx) 19971216 Product specification - - Please be Philips Semiconductors
Original

SOT121B

Abstract: DISCRETE SEMICONDUCTORS DATA SHEET M3D060 BLF177 HF/VHF power MOS transistor Product , information. PINNING PIN 1 2 3 4 drain source gate source DESCRIPTION 1 2 MLA876 BLF177 PIN , - -65 - MIN. BLF177 MAX. 125 ±20 16 220 +150 200 V V A W UNIT °C °C THERMAL , 0.2 25 480 190 14 BLF177 MAX. - 2.5 1 4.5 100 - 0.3 - - - - UNIT V mA µA V mV S A pF pF pF , /VHF power MOS transistor BLF177 MGP090 handbook, halfpage 0 handbook, halfpage 30
Philips Semiconductors
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SOT121B SCA75

BLF177

Abstract: philips ET-E 60 transistor N AMER PHILIPS/DISCRETE BLF177 bTE D FEATURES â'¢ High power gain â  Low intermodulation , Semiconductors m [¡,£,.53^31 â¡â¡7Tflfl4 ETE MAPX Product specification HF/VHF power MOS transistor BLF177 , T 3 â  A P X Product specification HF/VHF power MOS transistor BLF177 - N AMER PHILIPS/DISCRETE , transistor BLF177 N AMER PHILIPS/DISCRETE hlZ ]> 400 RDS(on) (mfi) 300 200 100 0 50 100 150 Tj (°C , £,.53^31 â¡â¡3Tflfl4 ETE MAPX Product specification HF/VHF power MOS transistor BLF177 N AI1ER
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OCR Scan
philips ET-E 60 2222 030 capacitor philips 4312 020 36642 WCA244 MARKING H3B PINNING-SOT121 MBA379

transistor tt 2222

Abstract: philips resistor 2322-153 damaged. (See also page 3). PHILIPS August 1988 BLF177 _) V RATINGS Limiting values in accordance , transistor BLF177 J V_ APPLICATION INFORMATION RF performance in SSB operation (common-source class-AB , August 1988 BLF177 _/ V Fig. 2 Test circuit at 28 MHz. C1 = C4 = C13 = C14= 7 - 100 pF film dielectric
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OCR Scan
transistor tt 2222 philips resistor 2322-153 TT 2222 71005 philips resistor 2322

BLF177

Abstract: TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION â'¢ High , transistor BLF177 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL , mismatch. (2) Continuous operation Fig.3 Power/temperature derating curves. BLF177 HFA/HF power , MOS transistor BLF177 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
New Jersey Semiconductor
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BLW95

Abstract: TV power transistor datasheet BLF244(2) 2 × BLF177 - 300 50 - 60 BLF246(1) 4 × BLF147 - 550 28 - 10 BLF175(1) 4 × BLF177 - 550 50 - 20 2 × BLF175(1) 8 × BLF177 -
Philips Semiconductors
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BLW83 BLV11 BLW77 BLW95 BLW50F TV power transistor datasheet BFQ68 Applications RF Power Modules microwave rf transmitter BLY87C BLY89C BLV10 BLW87 BLY88C BLW60C

BLF177

Abstract: hf power transistor mosfet BLF177 HF/VHF POWER MOS TRANSISTOR DESCRIPTION: The ASI BLF177 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for industrial and military applications in the HF/ VHF frequency range. PACKAGE STYLE .500 4L FLG .112x45° A FULL R L S D Ø.125 NOM. C B G S D G F K MAXIMUM RATINGS ID VDS VGS PDISS TJ TSTG JC 16 A 110 V ±20 V 220 W @ Tmb = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.8 °C/W DIM A B C D E F G H I J K L E H I J MINIMUM inches / mm
Advanced Semiconductor
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hf power transistor mosfet blf177 mosfet
Abstract: class AB (f = 28 MHz, da/ds < - 30 dB, 28 V & 50 V supply) BLF145 BLF175 BLF246 BLF147 BLF177 30 , BLF177 BLF247B BLF277 BLF248 BLF278 3 5 15 30 30 30 30 60 80 100 150 150 150 150 300 -
OCR Scan
BLF242 BLF241 BLF245 BLF245B BLF245C BLF246B

"RF Power Modules"

Abstract: BLW85 BLF147 - 300 28 - 15 BLF244(2) 2 × BLF177 - 300 50 - 60 BLF246(1) 4 × BLF147 - 550 28 - 10 BLF175(1) 4 × BLF177 - 550 50 - 20 2× 8 × BLF177 - 1000 50 - BLW86(1) BLW83(2) PowerMOS BLF175(1) Notes 1
Philips Semiconductors
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BLW85 bfq34 BLW33 bfg97 blf2043 BLV20 BLW76 BLW97 BLW96 BLV2042

motorola mrf

Abstract: MRF255 equivalent CROSS REFERENCE (Click on part No. to retrieve data sheet). 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341 SR341 MRF166 MRF166C MRF166W MRF171 MRF172 MRF173 MRF174 MRF175GU MRF176GU MRF177 MRF 255 SA701 SM704 SA741 SM341 PRF134 DU1215S DU1230P DU1230S DU1260T DU2805S F1215 F1207 F1220 F1260
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DU28120U DU28200M SD701 MRF255 LX802 BLF543 motorola mrf MRF255 equivalent Motorola transistors MRF mrf184 mrf5015 F2012 SE701 DU2810S DU28120T ST704 SC701

BLY32

Abstract: Philips Application BLX15 BLF147 BLF147 BLF177 BLF177 BLF177 150 300 550 300 550 1000 28 28 28 50 50 50 1) Class A operation 2
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OCR Scan
BFQ268 BLY32 Philips Application BLX15 blf278 108 amplifier RF Power Amplifiers bgy55 BFQ43 OM3016 OM3026 OM925 OM975 OM976 BFQ231

SOT467C

Abstract: BLF578 final final BLF177 BLF278 SOT121B SOT262A1 Package types for Broadcast / ISM products
NXP Semiconductors
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BLF871 BLF881 BLF645 BLF571 BLF573 BLF573S SOT467C BLF578 dvb_t blf574 BLF871S BLF881S

SOT123 Package

Abstract: SOT123 SOT262A1 BLF175 30 50 24 SOT123 BLF177 150 50 >20 SOT121 VCE (V) GP , BLF276 100 50 22 SOT119D3 BLF177 150 50 19 SOT121 BLF277 150 50 17
Philips Semiconductors
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BLX15 SOT123 Package SOT123 SOT-123 BFS22A BLY93 BFQ43 datasheet BLY87C/01 BLY88C/01 BLY91C BLY91C/01 BLV21 BLY92C

blf177

Abstract: 2204B Replacement for MRF151/ BLF177/ SD2941 · Common Source Configuration · RoHS Compliant Maximum Ratings
Microsemi
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VRF152 2204B 175MH BLF177/
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