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Part : 1553BIR-BULK Supplier : Hammond Manufacturing Manufacturer : Newark element14 Stock : - Best Price : $1.72 Price Each : $2.91
Part : 1553BIR-BULK Supplier : Hammond Manufacturing Manufacturer : Chip1Stop Stock : 11 Best Price : $1.8960 Price Each : $2.0370
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BIR-BM13J4G Datasheet

Part Manufacturer Description PDF Type
BIR-BM13J4G American Bright Optoelectronics Infrared Emitting Diodes Original
BIR-BM13J4G Bright LED INFRARED EMITTING DIODE Original
BIR-BM13J4G Bright LED LED - Round Type Original
BIR-BM13J4G YellowStone Water clear, infrared emitting diode Original
BIR-BM13J4G-1 American Bright Optoelectronics IrED: Single: 940nm Wave Length Original
BIR-BM13J4G-1 Bright LED INFRARED EMITTING DIODE Original
BIR-BM13J4G-1 YellowStone Water clear, infrared emitting diode Original

BIR-BM13J4G

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BRIGHT LED ELECTRONICS CORP. BIR-BM13J4G-1 SINCE 1981 END-LOOK PACKAGE LIGHT EMITTING DIODE Package Dimensions: Unit:mm(inches) Features: 1. High radiant power and high radiant intensity. 1.0(.040) 2. Standard T-1 3/4(5mm)package. 3. Peak wavelength λp=940nm. 4. Good spectral matching to , ELECTRONICS CORP. BIR-BM13J4G-1 SINCE 1981 Optical- Electrical Characteristics (@TA=25â"ƒ) Parameter , ELECTRONICS CORP. SINCE 1981 BIR-BM13J4G-1 Tapping and packaging specifications(Units: mm) Packaging Bright LED Electronics
Original
Abstract: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BM13J4G-2 END-LOOK PACKAGE LIGHT EMITTING DIODE z Features: 1. High radiant power and high radiant intensity. 2. Standard T-1 3/4(5mm)package. 3. Peak wavelength p=940nm. 4. Good spectral matching to si-photodetector. 5. Radiant angle:30° z , Page1 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BM13J4G-2 z Optical- Electrical , 1981 BIR-BM13J4G-2 z Tapping and packaging specifications(Units: mm) z Packaging Bag Bright LED Electronics
Original
Abstract: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BM13J4G END-LOOK PACKAGE LIGHT EMITTING DIODE Package Dimensions: Unit:mm(inches) Features: 1. High radiant power and high radiant intensity. 1.0(.040) 2. Standard T-1 3/4(5mm)package. 3. Peak wavelength p=940nm. 4. Good spectral matching to , BIR-BM13J4G Optical- Electrical Characteristics (@TA=25 ) Parameter Symbol Test Conditions Min , 0.6 (mA) Rev:2.1 Page2 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BIR-BM13J4G Bright LED Electronics
Original
Abstract: BRIGHT LED ELECTRONICS CORP. BIR-BM13J4G SINCE 1981 END-LOOK PACKAGE LIGHT EMITTING DIODE Package Dimensions: Unit:mm(inches) Features: 1. High radiant power and high radiant intensity. 1.0(.040) 2. Standard T-1 3/4(5mm)package. 3. Peak wavelength p=940nm. 4. Good spectral matching to , . BIR-BM13J4G SINCE 1981 Optical- Electrical Characteristics (@TA=25) Parameter Symbol Test , BIR-BM13J4G Tapping and packaging specifications(Units: mm) Packaging Bag Dimensions Notes: 1500pcs Bright LED Electronics
Original
Abstract: GaAlAs/GaAs Standard BIR-BM13J4G-1 1.0" Lead BIR-BN03J4G-1 GaAlAs/GaAlAs 5 BIR-BN07J4G , BIR-BL07J4G BIR-BM03J4G T-13/4 Standard BIR-BM13J4G 1.0" Lead BIR-BN03J4G 5 BIR-BN07J4G BIR-BO03J4G Bright LED Electronics
Original
BIR-BL0331 BIR-BL0731 BIR-BM1331 BIR-BN0331 BIR-BN0731 BIR-BO0331 BN033 BIR-BO03J4G-1 IR-0345 BM1331 BIR-BO0731 BIR-BM0331
Abstract: Standard BIR-BM13J4G-1 1.0" Lead BIR-BN03J4G-1 GaAlAs/GaAlAs 5 BIR-BN07J4G-1 BIR-BO07J4G-1 940 , BIR-BM03J4G T-13/4 Standard BIR-BM13J4G 1.0" Lead BIR-BN03J4G 5 BIR-BN07J4G BIR-BO03J4G BIR-BO07J4G Yellow Stone
Original
BIR-BL03J4G BIR-BO03J7M bl07j4g GaAlAs Diode BIR-BL03J4G-1 BIR-BL07J4G-1 BIR-BM03J4Q-1 BIR-BM07J4Q-1 BIR-BM13J7M
Abstract: 50 150 50 250 1.40 1.60 6.5 12.0 BIR-BM13J4G-1 50 200 100 500 1.35 1.60 7.5 12.0 BIR-BN03J4G , Water Clear 50 150 50 250 1.40 1.60 9.0 16.0 BIR-BM13J4G 50 200 100 500 1.35 1.60 10.0 17.0 -
OCR Scan
BIR-B00331 BIR-B007J4G BIR-B003J4G-1 IR-01 IR-02 BIR-B003J4Q-1 BIR-B007J4Q-1 BIR-BM03J7M
Abstract: Infrared Emitting Diode End Look 2 Chip Part Number Material Wave lengt h p BIR-BM13J4G GaAlAs/GaAs 940 BIR-BO13J4G GaAlAs/GaAlAs 850 BIR-BO03J4G GaAlAs/GaAlAs 850 BIR-BN03J4G GaAlAs/GaAlAs BIR-BM17J4G Lens Color V F (V)@ I F =50m A Ee(mW/cm ) @ I F =50m A Typ. Max. Min. Typ. 1.25 1.50 3.00 5.80 1.50 1.80 3.20 6.10 1.50 1.80 3.20 6.10 880 1.30 1.70 3.20 6.10 GaAlAs/GaAs 940 American Bright Optoelectronics
Original
BIR-BO17J4G IR-04
Abstract: Infrared Emitting Diode End Look 2 Chip Part Number Material Wave lengt h p BIR-BM13J4G GaAlAs/GaAs 940 BIR-BO13J4G GaAlAs/GaAlAs Lens Color 850 V F (V)@ I F =50m A Ee(mW/cm ) @ I F =50m A Typ. Max. Min. Typ. 1.25 1.50 3.00 5.80 1.50 1.80 3.20 Viewin g Angl e 2 1/2 6.10 Water Clear 20 BIR-BO03J4G GaAlAs/GaAlAs 850 1.50 1.80 3.20 6.10 BIR-BN03J4G GaAlAs/GaAlAs 880 1.30 1.70 3.20 American Bright Optoelectronics
Original
Abstract: Infrared Emitting Diode End Look Chip Part Number Material Wave lengt h p Lens Color V F (V)@ I F =50m A Typ. Max. Ee(mW/cm ) @ I F =50m A Min. Typ. 2 Viewin g Angl e 2 1/2 BIR-BM13J4G BIR-BO13J4G BIR-BO03J4G BIR-BN03J4G GaAlAs/GaAs GaAlAs/GaAlAs GaAlAs/GaAlAs GaAlAs/GaAlAs 940 850 850 880 Water Clear 1.25 1.50 1.50 1.30 1.50 1.80 1.80 1.70 3.00 3.20 3.20 3.20 5.80 6.10 6.10 6.10 20 BIR-BM17J4G BIR-BO17J4G BIR-BO07J4G BIR-BN07J4G GaAlAs/GaAs GaAlAs/GaAlAs GaAlAs/GaAlAs American Bright Optoelectronics
Original
IR04 GaAlAs
Abstract: 46.80 BIR-BM13J4G-1 GaAIAs/GaAs 940 1.20 1.50 16.50 33.40 BIR-BO03J4G , -2 GaAIAs/GaAIAs 880 1.30 1.70 8.41 17.06 30 65.50 BIR-BM13J4G L-106 33.40 Yellow Stone
Original
BIR-BO1331 BIR-BM1731 BIR-BO0331J BIR-BO13E4G-1 BIR-BM13E4G-2 BIR-NM13C1 BIR-BO03E4G-1 BIRBO13V4V2 BIR-BO13K4Q BIR-BM1331-A BIR-BM1731-A BIR-BO1731 BIR-BM1331J
Abstract: Infrared Emitting Diode End Look 2 Chip Part Number Material Wave lengt h p BIR-BM13J4G American Bright Optoelectronics
Original
BPT-BP2334 BPT-BP2931 BPT-BP1A34 BPT-BP0334 BPD-BQA934 BPT-BP0A31 IR-03 BPD-RQ03DV-1 BPD-RQ09DV-1 BPD-RQ09DY-A IR-16 IR-17