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BGX50AE6327HTSA1 Infineon Technologies AG Bridge Rectifier Diode, 1 Phase, 0.14A, Silicon, visit Digikey Buy

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BGX50A Datasheet

Part Manufacturer Description PDF Type
BGX50A Infineon Technologies Bridge Rectifier; Package: PG-SOT143-4; Configuration: Bridge; V<sub>R</sub> (max): 50.0 V; I<sub>F</sub> (max): 140.0 mA; I<sub>R</sub> (max): 0.2 uA; V<sub>F</sub> (max): 1.3 V; Original
BGX50A Infineon Technologies Silicon Switching Diode Array Original
BGX50A Infineon Technologies Silicon Switching Diode Array with bridge configuration Original
BGX50A Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BGX50A Siemens Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) Original
BGX50A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BGX50A Siemens Components for Surface Mounting 1983/4 Scan
BGX50AE6327 Infineon Technologies Bridge Rectifiers, Discrete Semiconductor Products, DIODE SWITCHING 50V SOT-143 Original
BGX50AE6327 Infineon Technologies DIODE SWITCHING 70V 0.14A 4SOT-143 T/R Original
BGX50A-T&R Infineon Technologies DIODE SWITCHING 70V 0.14A 4SOT-143 T/R Original

BGX50A

Catalog Datasheet MFG & Type PDF Document Tags

Diode BGX50A

Abstract: BFP181 BGX50A. Silicon Switching Diode Array · Bridge configuration · High-speed switching diode chip , Note Thermal Resistance 1 2007-03-27 BGX50A. Electrical Characteristics at TA = 25 , Oscillograph: R = 50, tr = 0.35ns, C 1pF EHN00019 2 2007-03-27 BGX50A. Reverse current IR = , 10 -5 10 -4 10 -3 10 -2 s 10 0 t 3 2007-03-27 BGX50A. Forward current , 60 75 90 105 120 °C 150 TS 4 2007-03-27 Package SOT143 BGX50A. 2 0.1
Infineon Technologies
Original
Diode BGX50A BFP181 sot143 marking code u1s Marking code U1s
Abstract: BGX50A. Silicon Switching Diode Array Bridge configuration High-speed switching diode chip BGX50A 4 D 3 D 4 D 2 D 1 3 1 2 Type BGX50A Parameter Package SOT143 Configuration , Feb-03-2003 BGX50A. Electrical Characteristics at T A = 25°C, unless otherwise specified Symbol , EHN00019 2 Feb-03-2003 BGX50A. Reverse current IR = (TA ) VR = Parameter 10 5 nA BGX 50A , 10 -2 t s 10 0 3 Feb-03-2003 BGX50A. Forward current IF = (TS ) BGX50A 160 mA Infineon Technologies
Original
EHB00146

chip Marking 3A3

Abstract: BGX50A BGX50A Silicon Switching Diode Array 3 Bridge configuration High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin , Thermal Resistance 1 Jul-31-2001 BGX50A Electrical Characteristics at TA = 25°C, unless , 2 Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50 Jul-31-2001 BGX50A , 10 -3 10 -2 s 10 0 t 3 Jul-31-2001 BGX50A Forward voltage VF = f (TA) 1.0
Infineon Technologies
Original
chip Marking 3A3 EHB00147 EHB00148 EHB00149
Abstract: BGX50A. Silicon Switching Diode Array â'¢ Bridge configuration â'¢ High-speed switching diode , calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-03-27 BGX50A. , ‰¤ 1pF EHN00019 2 2007-03-27 BGX50A. Forward Voltage VF = Æ' (TA) IF = Parameter , 10 -5 10 -4 10 -3 10 -2 s 10 0 t 3 2007-03-27 BGX50A. Forward current , 45 60 75 C 90 105 120 ° 150 TS 4 2007-03-27 Package SOT143 BGX50A. Infineon Technologies
Original

sot143 marking code u1s

Abstract: BGX50A. Silicon Switching Diode Array · Bridge configuration · High-speed switching diode chip , calculation of RthJA please refer to Application Note Thermal Resistance 1 2005-11-02 BGX50A. , 2005-11-02 BGX50A. Reverse current IR = (TA) VR = Parameter 10 5 nA BGX 50A EHB00146 Forward , 0 3 2005-11-02 BGX50A. Forward current IF = (T S) BGX50A 160 mA 120 IF , 2005-11-02 Package SOT143 BGX50A. Package Outline 0.15 MIN. 2.9 ±0.1 1.9 4 3 B 1 ±0.1
Infineon Technologies
Original

sot143 marking code u1s

Abstract: BFP181 BGX50A. Silicon Switching Diode Array Bridge configuration High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration , calculation of RthJA please refer to Application Note Thermal Resistance 1 Feb-03-2003 BGX50A. , 1pF Feb-03-2003 BGX50A. R 10 5 nA VR = Parameter (TA ) Forward Voltage VF , 10 -2 s 10 0 t 3 Feb-03-2003 BGX50A. BGX50A Forward current IF =
Infineon Technologies
Original
E6327

USB2513BQFN36

Abstract: EVB-USB2514 OCS_n3 R3 330 LED3 GRN 7 6 IN GND BR5 BGX50A 1 FB11 2A/0.05DCR J5 USB_B-REC RA-THRU L5 , USBDN_DP1 USBDN_DM1 C5 0.1uF R15 ZERO DNP DNP R11 ZERO L2 DLP11SN900SL2 2 R9 ZERO DNP 3 1 4 3 BR2 BGX50A 1 , 3V3 BR1 BGX50A 1 J2 DOWNSTREAM DOWNSTREAM USB_A-REC RA-THRU USB_A-REC RA-THRU VCC D+ DGND SH1 , BR3 BGX50A 1 FB5 2A/0.05DCR 3 2 EEPROM/Config SDA/SMBDATA/NON_REM1 SCL/SMBCLK/CFG_SEL0 HS_IND
Standard MicroSystems
Original
EVB-USB2513BC USB2513B EVB-USB2514QFN36 USB2513 24C04-DIP8 USB2513BQFN36 EVB-USB2514 DNP-12 QFN36 VDD18 10900-B

EVB-USB2514QFN36

Abstract: USB2512BQFN36 Option: To disable a USB port, pull both D+ and D- high. L5 DLP11SN900SL2 BR5 BGX50A 2 3 1 , 10K R26 10K 3V3 DNP ZERO 3 2 Not normally populated. BR1 BGX50A UPSTREAM 1 FB1 2A , DLP11SN900SL2 2 3V3 BR2 BGX50A DOWNSTREAM FB3 2A/0.05DCR PWR2 USBDN_DP2 USBDN_DM2 C6 + C11 100uF
Standard MicroSystems
Original
EVB-USB2512BC VDDA18PLL USB2512BQFN36 usb2512b DNP resistors SH1 EVALUATION BOARD USB2512B PQ1L333M2SP MIC2505-1 MIC2026-1BM 000MH
Abstract: °c A /fm = f(t) 0 0.5 1,0 1.5 V 162 Siemens BGX50A Forw ard voltage -
OCR Scan
Q62702-G35 Q62702-G38 I-150 BGX50

2N2907 SOT-23

Abstract: BC547 smd /PN BGX50A (Bridge) SMBD914 2N2222 2N2222A SMBT2222 A 2N2484 BC846B 2N2857
Infineon Technologies
Original
2N3563 2N2907 SOT-23 BC547 smd 2n2222 smd BAT16-046 2n2907 smd SMD BC547 1N4001 SCD-80 BAW78A BAS78A 1N4002 BAW78B

77120 ferrite core transformer

Abstract: 77120-A7 +5.1V 3A TO 12A L1 R10 2.7 5 + 1 BR1 BGX50A C11 C4 0.47µF 100µF 25V D5 1N759A
Linear Technology
Original
LT1241 55585-A2 77120 ferrite core transformer 77120-A7 transistor irfz44 MP1305 IRFZ44 mosfet switching circuit MP1305P-4AF 300KH MBR340 LXF35VB272M 16X40LL RCS-01-2

BF963

Abstract: 1N4004 SOD-123 BGX50A (Bridge) 1N914 2N2222 2N2222A 2N2484 2N2857 2N2907 2N2907A 2N3019 2N3053 2N3440
Siemens
Original
1N4148 BFR91A BFN21 BF993 BF963 1N4004 SOD-123 BB409 1N4148 SOD-123 BAT63-03W 1N4003 1N4004 SCT-595 BAS16 BAL/BAR74

SMBD2837

Abstract: SMBD2836 Diodes For com plete package outlines, refer to pages PO-1 through PO-6 General Purpose, Switching and Rectifier Type M a x im u m Ratings Characteristics (TA=25 C) Case Lead V RM V BAL74 BAL99 BAR74 BAR99 BAS 16 BAS16W BAS 19 BAS20 BAS21 BAS28 BAS78A BAS78B BAS78C BAS78D BAS79A BAS79B BAS79C BAS79D BASI 16 BAV70 BAV70W BAV74 BAV99 BAV99W BAV170 BAV199 BAW56 BAW56W BAW78A BAW78B BAW78C BAW78D BAW79A BAW79B BAW79C BAW79D BAW100 BAW101 BAW156 BGX50A SMBD914 SMBD2835 SMBD2836 50 70 50 70 85 85 120
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OCR Scan
SMBD2837 550 SOT143 br sot-143 BAT64-07 BAT65 BAT66 BAT66-05 BAT68 BAT68-03W

cdma Booster schematic

Abstract: uwb transceiver . Page 34 Bridge Rectifier Diode for Power Supplies > Applications > Consumer AC BGX50A Power Supply IC DC EMI/EMC filter Bridge Rectifier BGX50A Recommended Products in RED ! © 2007
Infineon Technologies
Original
cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A B132-H9014-X-X-7600 NB07-1094

Siemens MOSFET S100

Abstract: SBMT2222A 101 (Dual) BAW 156 (Dual) BGX50A (Bridge) SMBD 914 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT
-
OCR Scan
Siemens MOSFET S100 SBMT2222A 682 SOT-23 RF Transistors sot-23 AL25-100 sod-123 4007 BB419 BB512 BB515 BB619 BB620 BB804

2sc3052ef

Abstract: 2n2222a SOT23 Rectifier BGX50A New type (Brldga) 50 140 50 £020 50 £2.60 100 £6.0 SOT-143 Semiconductor Group 39
Infineon Technologies
Original
2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BF517 BF770A BF771 BF775 BF799 BF799W

diode S6 78A

Abstract: transistor 6bw BGX50A. Silicon Switching Diode Array â'¢ Bridge configuration â'¢ High-speed switching diode chip â'¢ Pb-free (RoHS compliant) package 1) â'¢ Qualified according AEC Q101 BGX50A " ! , ! , " , , #31; #31; Type BGX50A Package SOT143 Configuration bridge Marking U1s , Unit 360 K/W BGX50A 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-03-27 BGX50A
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OCR Scan
diode S6 78A transistor 6bw TRANSISTOR PNP BA RT SOT 89 32N45 mmic CEA SOT363 up 6103 s8 25-RF-BIPOLAR-T BCX13

MMBD2103

Abstract: ZENER DIODE t2d Option: To disable a USB port, pull both D+ and D- high. L5 DLP11SN900SL2 BR5 BGX50A 2 3 1 , 10K R26 10K 3V3 DNP ZERO 3 2 Not normally populated. BR1 BGX50A UPSTREAM 1 FB1 2A , DLP11SN900SL2 2 3V3 BR2 BGX50A DOWNSTREAM FB3 2A/0.05DCR PWR2 USBDN_DP2 USBDN_DM2 C6 + C11 100uF
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Original
MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

MMBD2104

Abstract: Transistor NEC 05F °c A /fm = f(t) 0 0.5 1,0 1.5 V 162 Siemens BGX50A Forw ard voltage
SMD Code Book
Original
Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor T2D DIODE 3w NDS358N mmbf4932 BAV105 LL4148 LL4448 BB241 BB249 LL914

Q2N4401

Abstract: D1N3940 BGX50A (Bridge) 1N914 2N2222 2N2222A 2N2484 2N2857 2N2907 2N2907A 2N3019 2N3053 2N3440
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Original
Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 RD91EB

diode fr 210

Abstract: 1506 diode . Page 34 Bridge Rectifier Diode for Power Supplies > Applications > Consumer AC BGX50A Power Supply IC DC EMI/EMC filter Bridge Rectifier BGX50A Recommended Products in RED ! © 2007
-
OCR Scan
diode fr 210 1506 diode diode s 360
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