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BGV503 Datasheet

Part Manufacturer Description PDF Type
BGV503 Infineon Technologies Negative Voltage Generator for biasing GaAs FET and Power Amplifier Original
BGV503 Infineon Technologies FET, Negative Voltage Generator For Biasing GaAs FET And Power Amplifier Original
BGV503-903 Infineon Technologies BGV503-903 Original
BGV503E6359 Infineon Technologies Negative Voltage Generator Original
BGV503E6433 Infineon Technologies Negative Voltage Generator Original

BGV503

Catalog Datasheet MFG & Type PDF Document Tags

smd C1D

Abstract: marking code C1d SMD GaAs Support IC BGV503 / BGV903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips ­ BGV503, BGV903 ­ for cellular phones · BGV503 , without regulator · Operating Voltage Range: + 2.2 V . 5.0 V · Typical Output Voltage: ­ 2.5 V (BGV503 , (taped) Package BGV503 BGV503 Q62702-L0132 P-TSSOP-10-2 BGV903 BGV903 Q62702-L0131 P-TSSOP-10-2 Data Book 1 03.00 BGV503/BGV903 BGV503 (one-stage charge-pump with
Infineon Technologies
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GPS09230 smd C1D marking code C1d SMD l0131 marking c2d negative voltage regulator ic BGV503/BGV903 EHT08524 EHT08525 EHT08526

BGV503

Abstract: device, observe handling precaution! Type Package Marking BGV503 P-TSSOP-10 BGV503S Data sheet 4 2001-11-09 2002-11-11 BGV503 Preliminary Electrical Characteristics at TA , Data sheet, BGV503, November 2002 BGV503 Negative Voltage Generator for biasing GaAs FETs and , or other persons may be endangered. BGV503 Data sheet Revision History: 2002-11-11 , BGV503 for biasing GaAs FETs and Power Amplifiers Features · one-stage charge-pump with
Infineon Technologies
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D-81541 EHT08519 EHT08516 EHT08520 EHT08521
Abstract: BGV503 Preliminary data sheet Package P-TSSOP-10 4 Marking BGV503S 2001-11-09 2002-05-16 BGV503 Preliminary Electrical Characteristics at TA=25°C, unless otherwise specified Characteristics , to assume that the health of the user or other persons may be endangered. BGV503 Preliminary data , Generator for biasing GaAs FETs and Power Amplifiers BGV503 Features · · · · · · · · one-stage , 40 COUT = 100 nF Preliminary data sheet 5 2001-11-09 2002-05-16 BGV503 Confidential Infineon Technologies
Original
Abstract: Mode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGV503 Preliminary data sheet Package P-TSSOP-10 4 Marking BGV503S 2001-11-09 2002-06-11 BGV503 , to assume that the health of the user or other persons may be endangered. BGV503 Preliminary data , for biasing GaAs FETs and Power Amplifiers BGV503 Features · · · · · · · · one-stage charge-pump , Preliminary data sheet 5 2001-11-09 2002-06-11 BGV503 Confidential Pin Descripion Pin No. 1 2 3 4 5 Infineon Technologies
Original
Abstract: GaAs FET and Power Amplifier Support chips - BGV503, BGV903 - for cellular phones â'¢ BGV503 , -2.5V (BGV503) -5.1V (BGV903) 3mA 25mV . 40m V @ Cout = 1|jF; lout = 3mA 230kHz < 5 jjA ii , ) Package BGV503 BGV503 Q62702L0132 TSSOP10-1 BGV903 BGV903 Q62702L0131 TSSOP1Q-1 BGV503 (one-stage charge-pump with regulator) Characteristics Condition Min Typ Unit 5.0 , supply voltage {V J is inverted (BGV503) and additionally doubled (BGV903) to a negativ output voltage -
OCR Scan

lowpassfilter

Abstract: T-SSOP-10-1 Amplifier Support chips ­ BGV503, BGV903 ­ for cellular phones · · · · · · · · · · BGV503: one-stage , Dimensions: . 5.0V -2.5V (BGV503) -5.1V (BGV903) 3mA 25mV . 40mV @ Cout = 1µF; Iout = 3mA 230kHz < 5µA 1.2 , observe handling precautions Type Marking Ordering code (taped) Package BGV503 BGV903 BGV503 BGV903 Q62702L0132 Q62702L0131 TSSOP10-1 TSSOP10-1 BGV503 (one-stage charge-pump with regulator , (Vcc) is inverted (BGV503) and additionally doubled (BGV903) to a negativ output voltage (nv).
Infineon Technologies
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lowpassfilter T-SSOP-10-1

FET GAAS marking a

Abstract: BGV503 handling precaution! Type Package Marking BGV503 P-TSSOP-10 BGV503S Data sheet 4 2001-11-09 2002-11-11 BGV503 Electrical Characteristics at TA=25°C, unless otherwise specified , Data sheet, BGV503, November 2002 BGV503 Negative Voltage Generator for biasing GaAs FETs and , or other persons may be endangered. BGV503 Data sheet Revision History: 2002-11-11 , reference to this document) to: mcdocu.comments@infineon.com Negative Voltage Generator BGV503
Infineon Technologies
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FET GAAS marking a

TSSOP-10

Abstract: TSSOP10 BGV503 Neg. Voltage Generator for GaAs FETs ··Vcc = + 2.2 . 5 V, Vout = -2.1 . -5 V Vcc = + 2.2 . 5 V, Vout = 2.1 . 5 V ··Internal Drain current regulator Internal Drain current regulator SMS DS PM3 26.05.2003 No. 1 ··Max. output current: 5 mA; Low Noise Max. output current: 5 mA; Low Noise ··Ideal supplement for GaAs FETs & GaAs MMICs Ideal supplement for GaAs FETs & GaAs , 18V BCR410W low current bias controller SOT343 BGV503 neg. voltage generator for
Infineon Technologies
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TSSOP-10 BCR400W BCR401R BCR402R BCR402U TSSOP10 GaAs FETs bcr405u led driver sms controller 100K/W 470K/W 190K/W

transistor Bc 540

Abstract: 68W SOT 42s BGV503 BGV903 GXs U1 BSP 50 BSP 51 BSP 52 BSP 60 BSP 61 Data Book 9 2000-09-01
Infineon Technologies
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transistor Bc 540 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 SCD-80 SC-79 70-04S SC-74 SCT-598 3904PN

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 BFN 39 BG BG BGV503 BGV903 BCP 56-16 BCP 68 BCP 68-10 BCP 68-16 BCP 68-25 BCP 69 BCP
Infineon Technologies
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marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 3904S 846AT 846BW 846BT 847AT 847BW

marking code C1d SMD

Abstract: smd C1D Data sheet, BGV503, November 2002 BGV503 Negative Voltage Generator for biasing GaAs FETs and , or other persons may be endangered. BGV503 Data sheet Revision History: 2002-11-11 , BGV503 for biasing GaAs FETs and Power Amplifiers Features · one-stage charge-pump with , device, observe handling precaution! Type Package Marking BGV503 P-TSSOP-10 BGV503S Data sheet 4 2001-11-09 2002-11-11 BGV503 Preliminary Electrical Characteristics at TA
Infineon Technologies
Original
MARKING CODE SMD IC 503 marking bgv 503/BGV P-TSSOP-10-1 GPS09184
Abstract: to assume that the health of the user or other persons may be endangered. BGV503 Preliminary data , for biasing GaAs FETs and Power Amplifiers BGV503 Features · · · · · · · · one-stage charge-pump , Mode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGV503 Preliminary data sheet Package P-TSSOP-10 4 Marking BGV503S 2001-11-09 2002-06-11 BGV503 , Preliminary data sheet 5 2001-11-09 2002-06-11 BGV503 Confidential Pin Descripion Pin No. 1 2 3 4 5 Infineon Technologies
Original

marking code C1d SMD

Abstract: smd C1D Amplifier Support chips ­ BGV503, BGV903 ­ for cellular phones · · · · · · · · · · BGV503: one-stage , Dimensions: . 5.0V -2.5V (BGV503) -5.1V (BGV903) 3mA 25mV . 40mV @ Cout = 1µF; Iout = 3mA 230kHz < 5µA 1.2 , observe handling precautions Type Marking Ordering code (taped) Package BGV503 BGV903 BGV503 BGV903 Q62702L0132 Q62702L0131 TSSOP10-1 TSSOP10-1 BGV503 (one-stage charge-pump with regulator , (Vcc) is inverted (BGV503) and additionally doubled (BGV903) to a negativ output voltage (nv).
Infineon Technologies
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c2pr 5v regulator

gaas fet marking AR

Abstract: BGV503 Neg. Voltage Generator for GaAs FETs ··Vcc = + 2.2 . 5 V, Vout = -2.1 . -5 V Vcc = + 2.2 . 5 V, Vout = 2.1 . 5 V ··Internal Drain current regulator Internal Drain current regulator SMS DS PM3 26.05.2003 No. 1 ··Max. output current: 5 mA; Low Noise Max. output current: 5 mA; Low Noise ··Ideal supplement for GaAs FETs & GaAs MMICs Ideal supplement for GaAs FETs & GaAs , 18V BCR410W low current bias controller SOT343 BGV503 neg. voltage generator for
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OCR Scan
gaas fet marking AR EHTO0524