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BFY51 Datasheet

Part Manufacturer Description PDF Type
BFY51 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=1 / Hfe=40min / fT(Hz)=60M / Pwr(W)=0.8 Original
BFY51 Philips Semiconductors NPN medium power transistors - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=1 / Hfe=40min / fT(Hz)=60M / Pwr(W)=0.8 Original
BFY51 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=30 / Ic=1 / Hfe=40min / fT(Hz)=60M / Pwr(W)=0.8 Original
BFY51 STMicroelectronics MEDIUM POWER AMPLIFIER Original
BFY51 Continental Device India Semiconductor Device Data Book 1996 Scan
BFY51 Crimson Semiconductor Transistor Selection Guide Scan
BFY51 Diode Transistor SMALL SIGNAL TRANSISTORS Scan
BFY51 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
BFY51 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
BFY51 Ferranti Semiconductors Shortform Data Book 1971 Scan
BFY51 Ferranti Semiconductors Quick Reference Guide 1985 Scan
BFY51 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
BFY51 ITT Semiconductors Semiconductor Summary 1969 Scan
BFY51 Micro Electronics Semiconductor Device Data Book Scan
BFY51 Micro Electronics Semiconductor Devices Scan
BFY51 Motorola Motorola Transistor Datasheets Scan
BFY51 Motorola The European Selection Data Book 1976 Scan
BFY51 Motorola European Master Selection Guide 1986 Scan
BFY51 Mullard Quick Reference Guide 1977/78 Scan
BFY51 N/A Semiconductor Master Cross Reference Guide Scan
Showing first 20 results.

BFY51

Catalog Datasheet MFG & Type PDF Document Tags

BFY51

Abstract: BFY50 b^E J> m bbSB^l â¡D277TD fl30 N AMER PHILIPS/DISCRETE IAPX A BFY50 BFY51 BFY52 SILICON , industrial applications. QUICK REFERENCE DATA bfy50 BFY51 bfy52 Collector-base voltage (open emitter , Material Copyrighted By Its Respective Manufacturer BFY50 BFY51 BFY52 â  bb53-ì31 0D27711 77? MAPX N , "th(j-case) BFY51 60 60 30 6.0 1.0 1.0 1.0 1.0 100 100 800 5.0 2.86 -65 to +150 200 220 35 BFY52 , Its Respective Manufacturer Silicon planar epitaxial transistors ¡â¡03 BiAPX BFY50 BFY51 N AMER
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OCR Scan
BFY50-BFY51 BFY50-BFY51-BFY52 LT150 LEM JFY52 BS944 BFY501

BFY52

Abstract: bfy50 current (max. 1 A) · Low voltage (max. 35 V). BFY50; BFY51 ; BFY52 PINNING PIN 1 2 3 emitter base , V V V A mW W BFY50 BFY51 BFY52 VCEO collector-em itter voltage BFY50 BFY51 BFY52 ICM Ptol TI , current total pow er dissipation 30 40 60 DC current gain BFY50 BFY51 BFY52 fT transition frequency lc = 50 mA; VCE = 10 V; f = 100 MHz BFY50 BFY51; BFY52 60 50 MHz MHz 1997 Apr 22 , ; BFY51 ; BFY52 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
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OCR Scan
BFY51 philips

BFY52

Abstract: BFY51 BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon , Symbol BFY50 BFY51 BFY52 V CBO Collector-base Voltage (I E = 0) 80 V 60 V 40 V , Conditions for BFY50 V CB = 60 V V CB = 60 V for BFY51 V CB = 40 V V CB = 40 V for BFY52 V CB = 30 V , * Collector-base Breakdown Voltage (I E = 0) I C = 100 µA for BFY50 for BFY51 for BFY52 80 60 40 V , for BFY51 for BFY52 35 30 20 V V V 6 V V (BR)EBO Emitter-base Breakdown
STMicroelectronics
Original
BFY50I P008B

Bfy51

Abstract: bTE T m bbS3T31 DDSTTTD A3D H A P X > 1 1 N AMER PHILIPS/DISCRETE I I BFY50 BFY51 BFY52 , ) Collector-emitter voltage (open base) max. v CB0 80 BFY52 BFY51 40 60 v CEO max. 35 , 50 002-089 August 1990 395 BFY50 BFY51 BFY52 â  bb53131 QQ27711 777 H A P X N AUER , C E m a x - (c u t -o f f , I ^ l m A ) I BFY51 A 100 100 a x . Pt o t m a x - T , 35 K/W bbsa^ai QQ277I b03 15 APX BFY50 BFY51 BFY52 Silicon planar epitaxial
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OCR Scan
S3T31 0DE760S 0QE7A03 B6S49 53T31

BFY51

Abstract: transistor BFY52 DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power , BFY50; BFY51; BFY52 FEATURES PINNING · High current (max. 1 A) PIN · Low voltage (max. 35 , MIN. TYP. MAX. UNIT open emitter BFY50 - 80 V BFY51 - - 60 V BFY52 - - 40 V BFY50 - - 35 V BFY51 - - 30 V BFY52 VCEO , - - 800 mW Tcase 100 °C - - 2.86 W BFY50 30 112 - BFY51
Philips Semiconductors
Original
transistor BFY52 ic str 6707 IC 7811 ic 709 BFY50 equivalent BP317 MAM317 SCA54

BFY51

Abstract: BFY50 SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors , Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V Collector Base Voltage VCBO , ) DESCRIPTION SYMBOL IC=10mA,IB=0 VCEO Collector Emitter Voltage 60 BFY50 BFY51 >30 >35 BFY52 , µA , VEB=5V, IC=0 DC Current Gain hFE BFY50 BFY51
Continental Device India
Original
DATASHEET BFY51 C-120

bfy50

Abstract: FY51 100°CJ 4 0 V ,T j = 100°C) 30 V, T }= 100°C) BFY50 BFY51 BFY52 V(BR}EB0 ICBO >CBO BFY50 BFY51 BFY52 lEBO 50 2.8 hFE BFY50 BFY51-52 BFY50 BFY51 BFY52 20 30 30 40 60 15 VCE(sat) BFY50 B FY51-52 BFY50 , itter Breakdown Voltage 0C = 10 mA) BFY50 BFY51 BFY52 BFY50 BFY51 BFY52 V(BR)CEO C ollector-Base
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OCR Scan
FY51

BFY50

Abstract: BFY51 Parameter Value Unit BFY50 BFY51 V CBO Collector-Base Voltage (IE = 0) 80 60 V , 200 o C 200 o C 1/5 BFY50/BFY51 THERMAL DATA R t hj-ca se R t hj- amb , V CB = 60 V for BFY51 V CB = 40 V V CB = 40 V Min. Typ . Max. Un it o 50 2.5 , ) I C = 100 µA for BFY50 for BFY51 80 60 V V V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) I C = 30 mA for BFY50 for BFY51 35 30 V V V (BR)EBO Emitter-Base
STMicroelectronics
Original
bfy51 equivalent bfy50 cb BFY51I BFY50/51 BFY50/BFY51
Abstract: ollector Current 1 A (Ie = 0) BFY51 (Ib = 0) 35 I CM C ollector Peak C urrent , perature November 1997 200 1/5 BFY50/BFY51 THERMAL DATA R th j-ca se R th j-a m b Therm , V cb = 60 V V cb = 60 V fo r BFY51 V cb = 40 V V cb = 40 V Min. Typ. Max. Unit , (IE = 0) lc = 100 |xA fo r BFY50 fo r BFY51 80 60 V V C o lle cto r-E m itte r Breakdown Voltage (I b = 0) lc = 30 mA fo r BFY50 fo r BFY51 35 30 V V V (BR)EBO Em -
OCR Scan
Abstract: SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors , Emitter Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V Collector Base Voltage , BFY51 >30 >35 BFY52 >20 UNITS V Collector Base Voltage VCBO IC=10µA,IE=0 >80 , BFY50, BFY51, BFY52 TO-39 Metal Can Package DESCRIPTION Emitter Cut off Current SYMBOL IEBO VEB=5V, IC=0 Tj =100oC VEB=5V, IC=0 DC Current Gain hFE BFY50 BFY51 Continental Device India
Original
Abstract: S G S-THOMSON MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar , (Ie =0) Collector Current BFY50 BFY51 BFY52 80 V 60 V 40 V 35 V 30 V , ) lc = 100 nA for BFY50 for BFY51 for BFY52 80 60 40 V V V Collector-emitter Breakdown Voltage (Ib = 0) lc = 30 mA for BFY50 for BFY51 for BFY52 35 30 20 V V V 6 V lc = 150 mA Ib = 15 mA for BFY50 for BFY51 and BFY52 lc = 1 A Ib = 0.1 A for BFY50 for -
OCR Scan
BFY50-B QQ31GG7

BFY51

Abstract: BFY50 BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal packages , BFY51 60 30 1,0 800 2,86 40 123 BFY52 40 20 1,0 800 2,86 60 142 V V A mW W D imensions in mm M , BFY51 BFY52 RATINGS v_ Limiting values of operation according to , BFY51 60 60 30 6 .0 1.0 1.0 1 .0 1.0 100 100 800 5 .0 2 .8 6 BFY52 40 40 20 V V V V A A A A mA mA mW , BFY50 BFY51 BFY52 BFY50 E L E C T R I C A L C H A R A C T E R I S T IC S (T = 2 5 °C u n le s s o th
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OCR Scan

BFY50

Abstract: BFY52 Certified Manufacturer SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package , SYMBOL VCEO Collector Emitter Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V , BFY50 BFY51 >30 >35 BFY52 >20 UNITS V Collector Base Voltage VCBO IC=10µA,IE=0 >80 , BFY50, BFY51, BFY52 TO-39 Metal Can Package DESCRIPTION Emitter Cut off Current SYMBOL IEBO VEB=5V, IC=0 Tj =100oC VEB=5V, IC=0 DC Current Gain hFE BFY50 BFY51
Continental Device India
Original

N706A

Abstract: 2N2368 TOâ'"39 2N1131 2N697 60 40 500 1 -5 150 15 40 120 150 100 50 600 TO-39 2N1132 BFY51 60 30 1000 0-35 , 40 120 150 100 50 600 T039 2N1132 BFY51 60 30 1000 0-35 150 15 40 â'" 150 50 50 800 T039 â'" BC107 , BFY51 30 1000 0 -35 150 15 40 - 150 50 50 55* 360* 150 TO-39 - 2N2218 30 800 0-4 150 15 40 120 150 250 , â'¢off ns ic mA BFY51 30 1000 CI 35 150 15 40 - 150 50 50 55* 360* 150 T039 â'" 2N2218 30 800 CI 4
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OCR Scan
2N4037 2N696 BC177 BCY59 BCY79 N706A 2N2368 2N2475 2N290 2N2220 N3053
Abstract: SILICON NPN TRANSISTOR BFY51 â'¢ V(BR)CEO = 30V (Min). â'¢ Hermetic TO-39 Metal Package. â'¢ Ideally Suited General Purpose Amplifier Applications â'¢ Screening Options Available â'¢ ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD , NPN TRANSISTOR BFY51 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols , ://www.semelab-tt.com Document Number 9728 Issue 1 Page 2 of 3 SILICON NPN TRANSISTOR BFY51 MECHANICAL DATA Semelab
Original

BFY51

Abstract: SILICON NPN TRANSISTOR BFY51 · · · V(BR)CEO = 30V (Min). Hermetic TO-39 Metal Package. Ideally Suited General Purpose Amplifier Applications Screening Options Available · · ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ Tstg Collector ­ Base Voltage , TRANSISTOR BFY51 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO (1 , ://www.semelab-tt.com Document Number 9728 Issue 1 Page 2 of 3 SILICON NPN TRANSISTOR BFY51 MECHANICAL DATA
Semelab
Original

2n2222 itt

Abstract: BSY86 BFY50 35 800 30 â'" 150 0.20 150 12 60 35256G 66 BFY51 30 800 40 â'" 150 0.35 150 12 50 35257E 66 , 27793A 2N3725 80 50 1* 60 150 100 1.7 40 375 27794X BFY50 80 35 30 â'" 150 â'" â'" 100 31270R BFY51 , 0.2 150 60 12 19540X - BFY51 30 40 â'" 150 0.35 150 50 12 19541H 67 BFY52 20 60 â'" 150 0.35 150 , * 60 5 40-150 2 70 19046E 66 BFY50 0.8 35 1 >30 150 60 19061G 66 BFY51 0.8 30 1 >40 150 60 19062E 66
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OCR Scan
BSX20 BSX26 2N914 2N2369 2N2369A BC119 2n2222 itt BSY86 ME6002 ME6102 BFY72 MA8003 35250H 35251F 35252D

2n706

Abstract: BC178 NPN GENERAL PURPOSE - Continued Type VCB V VCEO V Max ic mA Max VcE(sat) at hFE at Min fiat Ptot at Tamb = 25°C mW Packaga Complement V ic mA IB mA Min Max ic mA MHz ic mA 2 N3053 60 40 700 1 -4 150 15 50 250 150 100 50 1000 TO-39 2N4037 2N696 60 40 500 1 -5 150 15 20 60 150 80 50 600 TOâ'"39 2N1131 2N697 60 40 500 1 -5 150 15 40 120 150 100 50 600 TO-39 2N1132 BFY51 60 30 1000 0-35 , 40 120 150 100 50 600 T039 2N1132 BFY51 60 30 1000 0-35 150 15 40 â'" 150 50 50 800 T039 â'" BC107
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OCR Scan
BC178 2n706 bc107 complement 2N929 2N930 ZT181 ZT182 BFX86 BCY42

BF 194 transistor

Abstract: BF 194 npn transistor ,8 (2,8) 200 < 35 « 220) < 50 60 BFY51 60 30 6 1 0,8 (2,8) 200 < 35 « 220) < 50 40 BFY52 40 20 , 6/50 (7) BFY51 â'" (>30) (>40) â'" (>15) 30) (>60) â'" (> 15) < 1,6
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OCR Scan
BSY81 BSY82 BF 194 transistor BF 194 npn transistor BF 194 TRANSISTORS transistor bf 194 C22B

BFY50 equivalent

Abstract: 2n2222 texas instruments Amplifier CV7723 BFY51 T05 NPN 60 30 6 40 120 150 50 â'¢ CV7724 BFY52 TO 5 NPN 40 20 6 60 200 150 50 â'¢ CV7725 BFY50 T05 NPN 80 35 6 30 â'" 150 50 â'¢ 1 General Purpose Amplifier and CV7726 BFY51 TO 5 NPN
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OCR Scan
CV7722 CV7735 CV7738 CV7751 CV7752 CV7753 2n2222 texas instruments CV7756 2N2222 npn small signal current gain equivalent of 2n2222 BFY52 equivalent CV7727 2N1711 2N2484

BFY50-BFY51

Abstract: /IT ^7# S C S -IH O M S O N RjincoeiiLiCToeffiines BFY50-BFY51 BFY52 M EDIUM -PO W ER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. INTERNAL SCHEMATIC DIAGRAM O ' l0 - @ NPN O * E ABSOLUTE MAXIMUM RATINGS S ym bo l VcBO VcEO v EBO lc I CM Ptot Collector-base Voltage P aram eter (Ie BFY50 80 V 35 V BF Y 5 1 60 V 30 V 6 V 1 A
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OCR Scan
FY50-BFY51-BFY52

BFY50

Abstract: BFY51 BFY 50 BFY 51 â w 52 SILICON PLANAR NPN MEDIUM-POWER AMPLIFIERS The BFY50, BFY51 and EIFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. ABSOLUTE MAXIMUM RATINGS BFY 50 BFY 51 BFY 52 VcBO Collector-base voltage (le = 0) 80 V 60 V 40 V VcEO Collector-emitter voltage (lB = 0) 35 V_ 30 V _20 V VEBO Emitter-base voltage (lc = 0) ~6V lc Collector current 1 A 'cm Collector peak current 1 A Ptot Total
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OCR Scan
BFY 52 transistor VCB-30V 100/JA

BFY50

Abstract: BFY 50 BFY 50 BFY 51 SILICON PLANAR NPN BFY 52 MEDIUM-POWER AMPLIFIERS The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. ABSOLUTE MAXIMUM RATINGS B FY 50 BFY 51 BFY 52 vcbo Collector-base voltage (lE =0) 80 V 60 V 40 V Vceo Collector-emitter voltage (lB =0) 35 V _ 30 V 20 V Vebo Emitter-base voltage (lc = 0) 6 V lc Collector current 1 A 'cm Collector peak current 1.5 A Ptot Total
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OCR Scan
BFY 50 55x1 BFY 39 100/ZA
Abstract: SILICON NPN TRANSISTOR BFY51 â'¢ V(BR)CEO = 30V (Min). â'¢ Hermetic TO-39 Metal Package. â'¢ Ideally Suited General Purpose Amplifier Applications â'¢ Screening Options Available â'¢ ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD , NPN TRANSISTOR BFY51 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols , ://www.semelab-tt.com Document Number 9728 Issue 1 Page 2 of 3 SILICON NPN TRANSISTOR BFY51 MECHANICAL DATA -
OCR Scan
BOX69477 924ZS
Showing first 20 results.