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Part : BFY50 Supplier : Philips Semiconductors Manufacturer : Bristol Electronics Stock : 405 Best Price : $0.5250 Price Each : $1.8750
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BFY50 Datasheet

Part Manufacturer Description PDF Type
BFY50 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original
BFY50 Philips Semiconductors Small-signal Transistors Original
BFY50 Philips Semiconductors NPN medium power transistors - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original
BFY50 Semelab Medium Power Amplifiers NPN Silicon Planar Transistor - Pol=NPN / Pkg=TO39 / Vceo=35 / Ic=1 / Hfe=30min / fT(Hz)=60M / Pwr(W)=0.8 Original
BFY50 STMicroelectronics MEDIUM POWER AMPLIFIER Original
BFY50 Continental Device India Semiconductor Device Data Book 1996 Scan
BFY50 Crimson Semiconductor Transistor Selection Guide Scan
BFY50 Diode Transistor SMALL SIGNAL TRANSISTORS Scan
BFY50 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
BFY50 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
BFY50 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan
BFY50 Ferranti Semiconductors Shortform Data Book 1971 Scan
BFY50 Ferranti Semiconductors Quick Reference Guide 1985 Scan
BFY50 ITT Semiconductors Semiconductor Summary 1969 Scan
BFY50 Micro Electronics Semiconductor Device Data Book Scan
BFY50 Micro Electronics Semiconductor Devices Scan
BFY50 Motorola Motorola Transistor Datasheets Scan
BFY50 Motorola The European Selection Data Book 1976 Scan
BFY50 Motorola European Master Selection Guide 1986 Scan
BFY50 Mullard Quick Reference Guide 1977/78 Scan
Showing first 20 results.

BFY50

Catalog Datasheet MFG & Type PDF Document Tags

BFY51

Abstract: BFY50 b^E J> m bbSB^l â¡D277TD fl30 N AMER PHILIPS/DISCRETE IAPX A BFY50 BFY51 BFY52 SILICON , industrial applications. QUICK REFERENCE DATA bfy50 BFY51 bfy52 Collector-base voltage (open emitter , Material Copyrighted By Its Respective Manufacturer BFY50 BFY51 BFY52 â  bb53-ì31 0D27711 77? MAPX N , Temperature T * stg T. max. J THERMAL CHARACTERISTICS R., . . in free air th(j-amb) BFY50 80 80 35 R , Its Respective Manufacturer Silicon planar epitaxial transistors ¡â¡03 BiAPX BFY50 BFY51 N AMER
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OCR Scan
BFY50-BFY51 BFY50-BFY51-BFY52 LT150 LEM JFY52 BS944 BFY501

BFY52

Abstract: bfy50 current (max. 1 A) · Low voltage (max. 35 V). BFY50; BFY51 ; BFY52 PINNING PIN 1 2 3 emitter base , V V V A mW W BFY50 BFY51 BFY52 VCEO collector-em itter voltage BFY50 BFY51 BFY52 ICM Ptol TI , current total pow er dissipation 30 40 60 DC current gain BFY50 BFY51 BFY52 fT transition frequency lc = 50 mA; VCE = 10 V; f = 100 MHz BFY50 BFY51; BFY52 60 50 MHz MHz 1997 Apr 22 622 Philips Semiconductors Product specification NPN medium power transistors BFY50
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BFY51 philips

bfy50

Abstract: FY51 itter Breakdown Voltage 0C = 10 mA) BFY50 BFY51 BFY52 BFY50 BFY51 BFY52 V(BR)CEO C ollector-Base , 100°CJ 4 0 V ,T j = 100°C) 30 V, T }= 100°C) BFY50 BFY51 BFY52 V(BR}EB0 ICBO >CBO BFY50 BFY51 BFY52 lEBO 50 2.8 hFE BFY50 BFY51-52 BFY50 BFY51 BFY52 20 30 30 40 60 15 VCE(sat) BFY50 B FY51-52 BFY50 , 3-274 i MOTOROL A SC XSTRS/R F 15E D | b3b75S4 OGabMflb 5 | BFY50 thru BFY52 T- , 6 V, f = 2 0 MHz) BFY50 B FY51-52 hfe BFYSO BFY 51-52 C0 b 12 fr MHz 60 50 10 30 pF 1 Sym bol | M in
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FY51

BFY52

Abstract: BFY51 BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon , , T j January 1989 Storage and Junction Temperature ­ 65 to 200 °C 1/5 BFY50-BFY51-BFY52 , = 300 µs, duty cycle = 1 %. 2/5 BFY50-BFY51-BFY52 ELECTRICAL CHARACTERISTICS (continued , 60 ns * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 3/5 BFY50-BFY51-BFY52 , L P008B 4/5 BFY50-BFY51-BFY52 Information furnished is believed to be accurate and
STMicroelectronics
Original
BFY50I

Bfy51

Abstract: bTE T m bbS3T31 DDSTTTD A3D H A P X > 1 1 N AMER PHILIPS/DISCRETE I I BFY50 BFY51 BFY52 , purpose industrial applications. QUICK REFERENCE DATA BFY50 Collector-base voltage (open emitter , 50 002-089 August 1990 395 BFY50 BFY51 BFY52 â  bb53131 QQ27711 777 H A P X N AUER , system. Electrical BFY50 V _ m a x . CBO 40 V 80 60 40 V 30 20 V 6 , 35 K/W bbsa^ai QQ277I b03 15 APX BFY50 BFY51 BFY52 Silicon planar epitaxial
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S3T31 0DE760S 0QE7A03 B6S49 53T31

BFY50

Abstract: BFY51 BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial , Parameter Value Unit BFY50 BFY51 V CBO Collector-Base Voltage (IE = 0) 80 60 V , 200 o C 200 o C 1/5 BFY50/BFY51 THERMAL DATA R t hj-ca se R t hj- amb , I EBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s for BFY50 V CB = 60 V , ) I C = 100 µA for BFY50 for BFY51 80 60 V V V ( BR)CEO Collector-Emitter Breakdown
STMicroelectronics
Original
bfy51 equivalent BFY50 equivalent DATASHEET BFY51 bfy50 cb BFY51I BFY50/51 BFY50/BFY51
Abstract: à T SGS-THOMSON n© )IIL[iC î © lsi(S TIS iD S BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case , alue Unit BFY50 80 60 V 30 V V CBO C ollector-B ase V oltage VcEO C o , perature November 1997 200 1/5 BFY50/BFY51 THERMAL DATA R th j-ca se R th j-a m b Therm , ) P aram eter C ollector C ut-off C urrent (Ie = 0) Max Max Test C o n d itio n s fo r BFY50 -
OCR Scan

BFY51

Abstract: transistor BFY52 DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFY50; BFY51; BFY52 NPN medium power , BFY50; BFY51; BFY52 FEATURES PINNING · High current (max. 1 A) PIN · Low voltage (max. 35 , MIN. TYP. MAX. UNIT open emitter BFY50 - 80 V BFY51 - - 60 V BFY52 - - 40 V BFY50 - - 35 V BFY51 - - 30 V BFY52 VCEO , - - 800 mW Tcase 100 °C - - 2.86 W BFY50 30 112 - BFY51
Philips Semiconductors
Original
transistor BFY52 ic str 6707 IC 7811 ic 709 BP317 MAM317 SCA54

BFY51

Abstract: BFY50 www.cdil.com BFY50_51_52Rev210701 Continental Device India Limited Data Sheet Page 4 of 4 , SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors , Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V Collector Base Voltage VCBO , ) DESCRIPTION SYMBOL IC=10mA,IB=0 VCEO Collector Emitter Voltage 60 BFY50 BFY51 >30 >35 BFY52 , µA
Continental Device India
Original
C-120
Abstract: 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com BFY50_51_52Rev210701 Continental Device , SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package General Purpose Transistors , Emitter Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V Collector Base Voltage , specified otherwise) DESCRIPTION SYMBOL IC=10mA,IB=0 VCEO Collector Emitter Voltage 60 BFY50 , BFY50, BFY51, BFY52 TO-39 Metal Can Package DESCRIPTION Emitter Cut off Current SYMBOL IEBO Continental Device India
Original

BFY51

Abstract: BFY50 BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal packages intended for general purpose industrial applications. Q U IC K R E F E R E N C E D A T A BFY50 , axim um lead diam eter is guaranteed o n ly for 12,7 mm. 'X / ' September 1994 593 BFY50 , the absolute maximum sy stem . E lectrical BFY50 V max. C BO V m ax. (c u t-o ff,I, £ 1mA) c t, c , BFY50 BFY51 BFY52 BFY50 E L E C T R I C A L C H A R A C T E R I S T IC S (T = 2 5 °C u n le s s o th
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Abstract: 30E d â  Goaiaas ? â  SCS-THOMSON HkHOT®«! ^ 1 A -Z 3 > BFY50-B FY51 BFY52 S G S-THOMSON MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar , Temperature - 65 to 200 °C 1/3 187 BFY50-BFY51-BFY52 30E D M S G S-THOMSON TRSTSB , 7^2^837 QQ31GG7 â¡ â  BFY50-BFY51-BFY52 S G S-THOMSON ELECTRICAL CHARACTERISTICS (continued , (Ie =0) Collector Current BFY50 BFY51 BFY52 80 V 60 V 40 V 35 V 30 V -
OCR Scan

BFY50

Abstract: search for devices beginning "BFY50" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT BFY50 BFY50L Polarity NPN NPN Package TO39 TO5 VCEO 35V 35V IC(cont) 1A 1A HFE , BFY50 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 , ) Description 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 12.70 (0.500) min. The BFY50 is a Silicon , Document Numer 3085 Issue 1 BFY50 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated
Semelab
Original

BFY50

Abstract: BFY52 5290 e-mail sales@cdil.com www.cdil.com BFY50_51_52Rev210701 Continental Device India Limited , Certified Manufacturer SILICON PLANAR TRANSISTORS BFY50, BFY51, BFY52 TO-39 Metal Can Package , SYMBOL VCEO Collector Emitter Voltage BFY50 BFY51 35 30 BFY52 20 UNITS V 40 V , BFY50 BFY51 >30 >35 BFY52 >20 UNITS V Collector Base Voltage VCBO IC=10µA,IE=0 >80 , BFY50, BFY51, BFY52 TO-39 Metal Can Package DESCRIPTION Emitter Cut off Current SYMBOL IEBO
Continental Device India
Original

BFY50

Abstract: BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications 0.89 , 5W ­65 to 200°C 35°C / W 218°C / W Prelim.02/00 BFY50 ELECTRICAL CHARACTERISTICS (Tcase
Semelab
Original
Abstract: SILICON NPN TRANSISTOR BFY50 â'¢ V(BR)CEO = 35V (Min). â'¢ Hermetic TO-39 Metal Package. â'¢ Ideally Suited General Purpose Amplifier Applications â'¢ Screening Options Available â'¢ ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD , NPN TRANSISTOR BFY50 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols , ://www.semelab-tt.com Document Number 3085 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR BFY50 MECHANICAL DATA Semelab
Original
Abstract: BFY50 MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications 0.89 , 1A 1.5A 0.8W 5W â'"65 to 200°C 35°C / W 218°C / W Prelim.02/00 BFY50 ELECTRICAL Semelab
Original
Abstract: SILICON NPN TRANSISTOR BFY50 · · · V(BR)CEO = 35V (Min). Hermetic TO-39 Metal Package. Ideally Suited General Purpose Amplifier Applications Screening Options Available · · ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ Tstg Collector ­ Base Voltage , TRANSISTOR BFY50 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO (1 , ://www.semelab-tt.com Document Number 3085 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR BFY50 MECHANICAL DATA Semelab
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C495 transistor

Abstract: transistor c495 at 1mA BFY50 BFY51 BFY52 NPN NPN NPN T039 T039 T039 80 35 6 60 30 6 40 20 6 1000 1000 1000 150 30 â , 150 200 J BS9300 C722 BFY50 T05 NPN 80 35 6 30 100 150 50 BS9300 C723 BFY51 T05 NPN 60 30 6 40 , C725 BFY50 T05 NÌN 80 35 6 30 _ 150 50 General Purpose Amplifier and BS93Q0 C726 BFYS1 T05 NPN 60 30
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C495 transistor transistor c495 C735 c495 NPN C460 u c756 BFT39 BFT40 BFT41 BFT29 BFT30 BFT31

BFY50

Abstract: tc 3085 BFY50 MECHANICAL DATA Dimensions in mm (inches) MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. Description The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications 0.89 max. (0.035 , : sales@semelab.co.uk Website: http://www.semelab.co.uk Document Numer 3085 Issue 1 BFY50 ELECTRICAL
Semelab
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tc 3085
Abstract: BFY 50 â'¢ BFY 51 â'¢ BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR I\/IIC=:F? -
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BOX69477 924ZS

BFY50

Abstract: BFY51 BFY 50 BFY 51 â w 52 SILICON PLANAR NPN MEDIUM-POWER AMPLIFIERS The BFY50, BFY51 and EIFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. ABSOLUTE MAXIMUM RATINGS BFY 50 BFY 51 BFY 52 VcBO Collector-base voltage (le = 0) 80 V 60 V 40 V VcEO Collector-emitter voltage (lB = 0) 35 V_ 30 V _20 V VEBO Emitter-base voltage (lc = 0) ~6V lc Collector current 1 A 'cm Collector peak current 1 A Ptot Total
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BFY 52 transistor VCB-30V 100/JA

BFY50

Abstract: BFY 50 BFY 50 BFY 51 SILICON PLANAR NPN BFY 52 MEDIUM-POWER AMPLIFIERS The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. ABSOLUTE MAXIMUM RATINGS B FY 50 BFY 51 BFY 52 vcbo Collector-base voltage (lE =0) 80 V 60 V 40 V Vceo Collector-emitter voltage (lB =0) 35 V _ 30 V 20 V Vebo Emitter-base voltage (lc = 0) 6 V lc Collector current 1 A 'cm Collector peak current 1.5 A Ptot Total
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BFY 50 55x1 BFY 39 100/ZA

2N2222A 338

Abstract: TFK 949 5MA 5MA 5MA IMA ALG ALG ALG ALG VLA OBS OBS OBS OBS RCU BFY50 BFY50 BFY50 BFY50 AF124 2N2297 , AMG ALG ALG ALG ALG MOB OBS OBS OBS OBS ACY17 BFY50 BFY50 BFY50 BFY50 2N1176 2N2297 2N2297 2N2297 , ALG ALG ALG ALG ALG OBS OBS OBS OBS OBS BFY50 BFY50 BFY50 BFY50 BFY50 2N2297 2N2297 2N2297 2N2297 , 10MA ALG ALG ALG ALG ALG OBS OBS OBS OBS OBS BFY50 BFY50 BFY50 BFY50 BFY50 2N2297 2N2297 2N2297 , ALG ALG ALH OBS OBS OBS OBS OBS BFY50 BFY50 BFY50 BFY50 BSW66 2N2297 2N2297 2N2297 2N2297 2N1893 0
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2N2222A 338 TFK 949 ac128 ad161 BSY19 halbleiter index transistor 2CY17 2CY18 2CY19 2CY20 2CY21 500MA
Showing first 20 results.