BFY405 Datasheet
| Part | Manufacturer | Description | Type | |
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| BFY405 | Infineon Technologies | HiRel NPN Silicon RF Transistor |
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| BFY405 (ES) | Infineon Technologies | HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; V<sub>CEO</sub> (max): 4.5 V; I<sub>C</sub>(max): 12.0 mA; P<sub>tot</sub> (max): 55.0 mW; f<sub>T</sub> (typ): 22.0 GHz; |
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| BFY405ES | Infineon Technologies | HiRel NPN Silicon RF Transistor |
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| BFY405H | Infineon Technologies | HiRel NPN Silicon RF Transistor |
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| BFY405 (P) | Infineon Technologies | HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; V<sub>CEO</sub> (max): 4.5 V; I<sub>C</sub>(max): 12.0 mA; P<sub>tot</sub> (max): 55.0 mW; f<sub>T</sub> (typ): 22.0 GHz; |
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| BFY405P | Infineon Technologies | HiRel NPN Silicon RF Transistor |
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| BFY405S | Infineon Technologies | HiRel NPN Silicon RF Transistor |
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BFY405
| Catalog Datasheet | MFG & Type | Document Tags | |
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RF TRANSISTOR NPN MICRO-XAbstract: BFY405 BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · , Marking Ordering Code Pin Configuration 1 BFY405 (ql) (ql) Quality Level: - see below , ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY405 Maximum Ratings , Semiconductor Group 2 of 5 Draft B, September 99 BFY405 Electrical Characteristics (continued , S12 Semiconductor Group 3 of 5 Draft B, September 99 BFY405 Order Instructions: Full |
Infineon Technologies Original |
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RF TRANSISTOR NPN MICRO-X Q62702F1661 Q62702F1710 D-81617 QS9000 |
35 micro-X Package MARKING CODE QAbstract: low noise Micro-X marking "K" BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · 3 , Ordering Code Pin Configuration 1 BFY405 (ql) (ql) Quality Level: - see below C 2 E , example) Semiconductor Group 1 of 5 Draft B, Jul. 98 BFY405 Maximum Ratings Parameter , Semiconductor Group 2 of 5 Draft B, Jul. 98 BFY405 Electrical Characteristics (continued) Parameter , 6 21 612 Semiconductor Group 3 of 5 Draft B, Jul. 98 BFY405 Order Instructions: Full |
Siemens Original |
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35 micro-X Package MARKING CODE Q low noise Micro-X marking "K" Micro-X marking "K" |
transistor C 5611Abstract: INFINEON DETAIL BFY405 HiRel NPN Silicon RF Transistor 4 HiRel Discrete and Microwave Semiconductor For , 4 E Package BFY405 (ql) - see below C Micro-X (ql) Quality Level: P , ordering example) IFAG IMM RDP D HIR 1 of 4 V2, February 2011 BFY405 Maximum Ratings , BFY405 Electrical Characteristics (continued) Parameter Symbol min. AC Characteristics Transition , Notes.: 1) Gms S 21 S12 IFAG IMM RDP D HIR 3 of 4 V2, February 2011 BFY405 |
Infineon Technologies Original |
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transistor C 5611 INFINEON DETAIL |
micro-X Package MARKING CODE CAbstract: INFINEON DETAIL BFY405 HiRel NPN Silicon RF Transistor · · · · · · · · HiRel Discrete and Microwave Semiconductor , E 3 B 4 E Package BFY405 (ql) - see below C Micro-X (ql) Quality Level: P , instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY405 , Semiconductor Group 2 of 5 Draft B, September 99 BFY405 Electrical Characteristics (continued , S 21 S12 Semiconductor Group 3 of 5 Draft B, September 99 BFY405 Order Instructions |
Infineon Technologies Original |
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micro-X Package MARKING CODE C micro-X Package MARKING CODE 3 D-81609 |
| Abstract: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor â'¢ HiRel Discrete and Microwave , Marking Ordering Code Pin Configuration 1 2 BFY405 (ql) - see below C 3 E , M E N S BFY405 Maximum Ratings Parameter Symbol Values Unit Collector-emitter , c t o r G ro u p 2 of 5 Dr aft B, Jul. 98 S IE M E N S BFY405 Electrical , ro u p 3 of 5 Dr aft B, Jul. 98 S IE M E N S BFY405 Order Instructions: Full type |
- OCR Scan |
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RF TRANSISTOR NPN MICRO-XAbstract: Low Current Applications For Oscillators up to 12 GHz BFY405 · Noise Figure F = 1.15 dB at 1.8 , 4 E Package BFY405 (ql) - see below C Micro-X (ql) Quality Level: P , th JS BFY405 Symbol V * CEO V CBO Values 4.5 15 1.5 12 1.0 Unit V V V mA mA mW °C °C °C , = vbe = 0, f = 1 MHz m BFY405 Values typ. max. Unit % 20 CC B - GHz 22 0.05 0.9 PF - , Draft B, Jul. 98 S IE M E N S Order Instructions: BFY405 Full type variant including quality |
- OCR Scan |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor 4 For Low Current Applications ï'· 2 HiRel , ! Type Marking Ordering Code Pin Configuration 1 BFY405 (ql) (ql) Quality Level: - , IMM RDP D HIR 1 of 4 V2, February 2011 BFY405 Maximum Ratings Parameter Symbol Values , IMM RDP D HIR 2 of 4 V2, February 2011 BFY405 Electrical Characteristics (continued , IFAG IMM RDP D HIR 3 of 4 V2, February 2011 BFY405 Micro-X Package 4 Edition 2011-02 3 |
Infineon Technologies Original |
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MICROWAVE TRANSITORAbstract: BFY405 BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · For low , device, observe handling precaution! Type Marking BFY405 (ql) - Pin Configuration 1 , 145°C. For T >1 45°C derating is required. S S 2007-08-17 1 BFY405 Thermal Resistance , the pcb. 2This Test assures V (BR)CE0 > 4.5 V 2007-08-17 2 BFY405 Electrical , V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz 1G ms = | S21/ S12 | 2007-08-17 3 BFY405 |
Infineon Technologies Original |
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MICROWAVE TRANSITOR |
k-band gaas schottky diodeAbstract: transistor 1877 , 43, 44 BFY180, 280, 181, 183, BFY193, 196 BFY405, 420, 450, 490 CFY25, 27 CFY66, 67 CLY29, 32, 35, 38 |
- OCR Scan |
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k-band gaas schottky diode transistor 1877 1878 TRANSISTOR microwave transistor bfy193 BFY193 Microx Siemens Microwave BAS40 BXY42 CLY27 HPAC140 MWP25 MWP35 |
BXY 36 300Abstract: cfy66 Package P |
- OCR Scan |
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BXY 36 300 BFY183 BFY19 107 micro-x Microwave Semiconductors 42T1 BAT15-013/014 BAT15-033/034 BAT15-043/044 BAT15-063/064 BAT15-073/074 BAT15-093/094 |
SIEMENS MICROWAVE RADIO 8 GHzAbstract: gaas fet micro-X Package marking BAS40, 70 BXY42, 43, 44 13 BFY180, 280, 181, 183, BFY193, 196 BFY405, 420, 450 13 13 4.3 , . V mA mW K/W GHz dB dB dBm BFY405 4,5 12 55 545 22 1,15 |
Infineon Technologies Original |
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SIEMENS MICROWAVE RADIO 8 GHz gaas fet micro-X Package marking BAS70B-HP x-band power transistor bfy196 Micro-X marking "Fp" MWP-25 MWP-35 |
GaAs Amplifier Micro-X Marking kAbstract: gaas fet micro-X Package marking , 183, BFY193, 196 BFY405, 420, 450, 490 12 12 12 13 13 14 14 CFY25, 27 CFY66, 67 CLY29 , (2 GHz, (1.8 GHz, (1 .8 G H z , (1.8 GHz, 2 V) 2 V) 3 V) 2 V) dB dB GHz dBm BFY405 4.5 |
Siemens Original |
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BAT15 BAT14 GaAs Amplifier Micro-X Marking k GaAs Amplifier Micro-X BFY40 transistor "micro-x" "marking" 3 BFY420 gaas fet micro-X Package CLY38 CLY30 |
GaAs Amplifier Micro-X Marking kAbstract: Silicon Bipolar Transistor MICRO-X , 183, BFY193, 196 BFY405, 420, 450, 490 12 12 12 13 13 14 14 CFY25, 27 CFY66, 67 CLY29 , Detail Spec. Type Variant V mA mW K/W (2 GHz, (1.8 GHz, 3 V) 2 V) GHz dB BFY405 4.5 |
Siemens Original |
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Silicon Bipolar Transistor MICRO-X LNA ku-band microwave fet IC GaAs Amplifier Micro-X "Marking k" MMIC Amplifier Micro-X marking 420 GaAs Amplifier Micro-X Marking L |
Microwave PIN diodeAbstract: BFY196 S HiRel Discrete & Microwave Semiconductors HiRel Discrete & Microwave Semiconductors Radiation Hardness Analysis/Data of Family types: (family given in bracketts) · CGY40: (CGY41), Side 2 · CFY66: (CFY67), Side 3 · BXY42: (BXY43, BXY44), Side 4 - 5 · BFY193: (BFY180, BFY280, BFY181, BFY182, BFY183, BFY196) Side 6 - 8 · BFY450: (BFY405, BFY420) Side 9 - 11 Radiation Hardness WS GS HR 12/00 Side 1/11 HiRel Discrete & Microwave Semiconductors Radiation Analysis |
Infineon Technologies Original |
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SCC561100803 Microwave PIN diode BFY196 S 50kRad t359 krad ic radiation RA0082 RA0080 HEMT50 |
microwave transistor bfy193Abstract: GaAs Amplifier Micro-X Marking k Bipolar Microwave Transistors 4.3 BFY180, 280, 181, 183, BFY193, 196 BFY405, 420, 450 13 13 , No. V mA mW K/W GHz dB dB dBm BFY405 4,5 12 55 545 22 1 |
Infineon Technologies Original |
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siemens gaas fet Bipolar Transistors infineon radar CLX27 MSC Microwave |
siemens spc 2Abstract: SIEMENS MICROWAVE RADIO . age Type Type Variant No. V mA mW K/W GHz dB dB dBm BFY405 4,5 12 |
Siemens Original |
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siemens spc 2 SIEMENS MICROWAVE RADIO microwave transistor siemens x-band mmic lna Microwave GaAs FET micro x |
727 diodeAbstract: diode 716 , 43, 44 BFY180, 280, 181, 183, BFY193, 196 BFY405, 420, 450, 490 CFY25, 27 CFY66, 67 CLY29, 32, 35, 38 |
- OCR Scan |
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727 diode diode 716 transistor 717 TRANSISTOR 726 35 CFY cfy transistor |
716 transistorAbstract: 727 diode Package P |
Infineon Technologies Original |
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716 transistor BFY 34 transistor |
schottky diode 43tAbstract: 2520P BAS40, 70 BXY42, 43, 44 13 BFY180, 280, 181, 183, BFY193, 196 BFY405, 420, 450 13 13 4.3 , . V mA mW K/W GHz dB dB dBm BFY405 4,5 12 55 545 22 1,15 |
Infineon Technologies Original |
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schottky diode 43t 2520P CFY 19 5613 micro-x 420 CFY 18 40-T1 70-T1 70B-HP BXY42-T1 BXY42-T 43-T1 |
MMIC Amplifier Micro-X marking 420Abstract: x-band microwave fet cfy 14 Bipolar Microwave Transistors 4.3 BFY180, 280, 181, 183, BFY193, 196 BFY405, 420, 450 13 13 , No. V mA mW K/W GHz dB dB dBm BFY405 4,5 12 55 545 22 1 |
Infineon Technologies Original |
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x-band microwave fet cfy 14 guide selection microwave transistors BFy 90 transistor MMIC Amplifier Micro-X marking D COBRA RF EHA07482 EHA07483 EHA07484 EHA07485 EHA07486 EHA07487 |