NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| BFY405 | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| BFY405 (ES) | Infineon Technologies | HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; V<sub>CEO</sub> (max): 4.5 V; I<sub>C</sub>(max): 12.0 mA; P<sub>tot</sub> (max): 55.0 mW; f<sub>T</sub> (typ): 22.0 GHz; |
5 pages, |
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| BFY405 (P) | Infineon Technologies | HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; V<sub>CEO</sub> (max): 4.5 V; I<sub>C</sub>(max): 12.0 mA; P<sub>tot</sub> (max): 55.0 mW; f<sub>T</sub> (typ): 22.0 GHz; |
5 pages, |
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| BFY405ES | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| BFY405H | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| BFY405P | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| BFY405S | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: BFY405 HiRel NPN Silicon RF Transistor · · · · · · · · HiRel Discrete and Microwave Semiconductor , E 3 B 4 E Package BFY405 (ql) - see below C Micro-X (ql) Quality Level: P , instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY405 , Semiconductor Group 2 of 5 Draft B, September 99 BFY405 Electrical Characteristics (continued , S 21 S12 Semiconductor Group 3 of 5 Draft B, September 99 BFY405 Order Instructions ... | Original |
5 pages, |
INFINEON DETAIL micro-X Package MARKING CODE C BFY405 BFY405 abstract |
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| Abstract: Low Current Applications For Oscillators up to 12 GHz BFY405 · Noise Figure F = 1.15 dB at 1.8 , 4 E Package BFY405 (ql) - see below C Micro-X (ql) Quality Level: P , th JS BFY405 Symbol V * CEO V CBO Values 4.5 15 1.5 12 1.0 Unit V V V mA mA mW °C °C °C , vbe = 0, f = 1 MHz m BFY405 Values typ. max. Unit % 20 CC B - GHz 22 0.05 0.9 PF - , Draft B, Jul. 98 S IE M E N S Order Instructions: BFY405 Full type variant including quality ... | OCR Scan |
5 pages, |
BFY405 BFY405 abstract |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · , Marking Ordering Code Pin Configuration 1 BFY405 (ql) (ql) Quality Level: - see below , ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY405 Maximum Ratings , Semiconductor Group 2 of 5 Draft B, September 99 BFY405 Electrical Characteristics (continued , Semiconductor Group 3 of 5 Draft B, September 99 BFY405 Order Instructions: Full type variant ... | Original |
5 pages, |
BFY405 RF TRANSISTOR NPN MICRO-X BFY405 abstract |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · 3 , Ordering Code Pin Configuration 1 BFY405 (ql) (ql) Quality Level: - see below C 2 E , example) Semiconductor Group 1 of 5 Draft B, Jul. 98 BFY405 Maximum Ratings Parameter , Semiconductor Group 2 of 5 Draft B, Jul. 98 BFY405 Electrical Characteristics (continued) Parameter , 6 21 612 Semiconductor Group 3 of 5 Draft B, Jul. 98 BFY405 Order Instructions: Full ... | Original |
5 pages, |
Micro-X marking "K" low noise Micro-X marking "K" BFY405 35 micro-X Package MARKING CODE Q BFY405 abstract |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor 4 HiRel Discrete and Microwave Semiconductor For , Package BFY405 (ql) - see below C Micro-X (ql) Quality Level: P: Professional Quality , example) IFAG IMM RDP D HIR 1 of 4 V2, February 2011 BFY405 Maximum Ratings Parameter , BFY405 Electrical Characteristics (continued) Parameter Symbol min. AC Characteristics Transition , BFY405 Micro-X Package 4 Edition 2011-02 3 Published by Infineon Technologies AG 85579 ... | Original |
4 pages, |
INFINEON DETAIL transistor C 5611 BFY405 BFY405 abstract |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · For low , device, observe handling precaution! Type Marking BFY405 (ql) - Pin Configuration 1=C , 145°C. For T >1 45°C derating is required. S S 2007-08-17 1 BFY405 Thermal Resistance , the pcb. 2This Test assures V (BR)CE0 > 4.5 V 2007-08-17 2 BFY405 Electrical , V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz 1G ms = | S21/ S12 | 2007-08-17 3 BFY405 ... | Original |
5 pages, |
MICROWAVE TRANSITOR BFY405 BFY405 abstract |
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| Abstract: , 43, 44 BFY180 BFY180, 280, 181, 183, BFY193 BFY193, 196 BFY405, 420, 450, 490 CFY25 CFY25, 27 CFY66 CFY66, 67 CLY29 CLY29, 32, 35, 38 ... | OCR Scan |
1 pages, |
microwave transistor bfy193 hirel 1882 transistor 1877 k-band gaas schottky diode datasheet abstract |
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| Abstract: Package P ... | OCR Scan |
5 pages, |
GHZ micro-X Package datasheet abstract |
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| Abstract: HiRel Discrete & Microwave Semiconductors HiRel Discrete & Microwave Semiconductors Radiation Hardness Analysis/Data of Family types: (family given in bracketts) · CGY40 CGY40: (CGY41 CGY41), Side 2 · CFY66 CFY66: (CFY67 CFY67), Side 3 · BXY42 BXY42: (BXY43 BXY43, BXY44 BXY44), Side 4 - 5 · BFY193 BFY193: (BFY180 BFY180, BFY280 BFY280, BFY181 BFY181, BFY182 BFY182, BFY183 BFY183, BFY196 BFY196) Side 6 - 8 · BFY450 BFY450: (BFY405, BFY420 BFY420) Side 9 - 11 Radiation Hardness WS GS HR 12/00 Side 1/11 HiRel Discrete & Microwave Semiconductors Radiation Analysis ... | Original |
11 pages, |
BFY193 BFY280 BXY42 BXY43 BXY44 CFY66 CFY67 t359 ANAL SCC5513017 BFY196 S BFY183 CGY41 ic radiation CGY40 datasheet abstract |
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| Abstract: , 183, BFY193 BFY193, 196 BFY405, 420, 450, 490 12 12 12 13 13 14 14 CFY25 CFY25, 27 CFY66 CFY66, 67 CLY29 CLY29 , , (1.8 GHz, (1 .8 G H z , (1.8 GHz, 2 V) 2 V) 3 V) 2 V) dB dB GHz dBm BFY405 4.5 12 ... | Original |
21 pages, |
BFY405 BFY180 BAT15 BAT14 BAS40 CFY66 CLY29 CLY30 siemens gaas fet gaas fet micro-X microwave transistor siemens microwave transistor bfy193 LNA ku-band low noise Micro-X marking "K" transistor "micro-x" "marking" 3 datasheet abstract |
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| Abstract: ·»ihnciogift* Infineon G aAs Components HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Title 11.1 11.2 11.2.1 Preliminary Remarks Introduction to HiRel and Space Qualified Devices General Component Types Package Types Page 716 716 716 717 717 719 719 720 722 722 723 724 725 725 726 BAS 40, 70 BXY 42, 43, 44 BFY180 BFY180, 280,181, 182, 183, 193, 196 BFY 405, 420, 450 726 726 727 727 727 11.2.2 Silicon Devices 11.2.3 GaAs ... | OCR Scan |
2 pages, |
transistor 717 diode 716 727 diode datasheet abstract |
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| Abstract: GaAs Components HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Title 11.1 11.2 Preliminary Remarks Introduction to HiRel and Space Qualified Devices Component Types Package Types Page 716 716 716 717 717 719 719 720 722 722 723 724 725 725 726 BAS 40, 70 BXY 42, 43, 44 BFY 180, 280, 181, 182, 183, 193, 196 BFY 405, 420, 450 726 726 727 727 727 11.2.1 General 11.2.2 Silicon Devices 11.2.3 GaAs Devices 11.3 Quality Specif ... | Original |
2 pages, |
727 diode 716 transistor datasheet abstract |
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| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1 V IC = 8 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.7615 -1.1 18.447 180.0 0.0005 126.5 0.9744 0.1 0.020 0.7590 -1.8 18.412 178.0 0.0008 71.3 0.9759 -0.4 0.050 0.7618 -4.0 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay1v08m0.s2p |
Infineon | 02/10/1996 | 2.78 Kb | S2P | ay1v08m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.75 V IC = 3.5 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8721 -0.5 10.436 -179.8 0.0002 159.6 0.9903 -0.1 0.020 0.8705 -1.4 10.333 178.5 0.0007 105.7 0.9903 -0.4 0.050 0.8743 -2.4 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay1v73m5.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay1v73m5.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1 V IC = 2.5 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9040 -0.5 7.905 -179.4 0.0002 102.9 0.9923 -0.1 0.020 0.9025 -1.2 7.892 178.7 0.0009 85.6 0.9897 -0.4 0.050 0.9086 -2.3 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay1v02m5.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay1v02m5.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 3.5 V IC = 4 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8647 -0.5 11.653 179.5 0.0002 -39.3 0.9906 -0.1 0.020 0.8612 -1.0 11.605 177.8 0.0004 85.8 0.9943 -0.4 0.050 0.8678 -2.3 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay3v54m0.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay3v54m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.75 V IC = 8 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.7653 -0.9 18.578 179.7 0.0002 98.0 0.9782 0.1 0.020 0.7669 -1.5 18.592 177.7 0.0006 87.2 0.9822 -0.3 0.050 0.7660 -3.7 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay1v78m0.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay1v78m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 0.5 V IC = 8 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.7609 -1.1 18.024 -179.9 0.0004 109.5 0.9493 -0.2 0.020 0.7556 -2.4 18.000 177.9 0.0010 100.2 0.9506 -0.6 0.050 0.7601 -4.9 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ayv508m0.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ayv508m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.5 V IC = 5 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8321 -0.7 13.607 180.0 0.0002 109.7 0.9871 -0.1 0.020 0.8327 -1.3 13.560 178.1 0.0006 74.6 0.9884 -0.4 0.050 0.8318 -2.7 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay1v55m0.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay1v55m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 0.75 V IC = 0.5 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9788 -0.2 1.849 -179.0 0.0002 104.7 0.9978 -0.1 0.020 0.9772 -0.8 1.839 179.2 0.0005 76.8 0.9974 -0.3 0.050 0.9792 -1.6 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ayv75m50.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ayv75m50.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 2 V IC = 0.6 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9775 -0.4 2.202 -179.1 0.0003 117.7 0.9989 -0.2 0.020 0.9757 -0.6 2.189 179.1 0.0003 86.6 0.9982 -0.3 0.050 0.9749 -1.6 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay2v0m60.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay2v0m60.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1 V IC = 0.6 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9745 -0.3 2.196 -179.0 0.0004 102.4 1.0000 -0.2 0.020 0.9764 -0.8 2.190 179.1 0.0006 59.0 0.9996 -0.4 0.050 0.9756 -1.5 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay1v0m60.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay1v0m60.s2p |