500 MILLION PARTS FROM 12000 MANUFACTURERS
500 MILLION PARTS FROM 12000 MANUFACTURERS
| Part | Manufacturer | Description | Last Check | Distributor | Ordering |
| BFY405PZZZA1 | Infineon | Trans GP BJT NPN 4.5V 0.012A 4-Pin Micro-X (Alt: SP000011413) | (Sep 2016) | Avnet |  |
| BFY405PZZZA1 | Infineon Technologies | Trans GP BJT NPN 4.5V 0.012A 4-Pin Micro-X (Alt: SP000011413) | (Sep 2016) | Avnet | |
| Part | Manufacturer | Description | Type | Ordering |
| BFY405 | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| BFY405 (ES) | Infineon Technologies | HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; V<sub>CEO</sub> (max): 4.5 V; I<sub>C</sub>(max): 12.0 mA; P<sub>tot</sub> (max): 55.0 mW; f<sub>T</sub> (typ): 22.0 GHz; |
5 pages, |
Original | |
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| BFY405 (P) | Infineon Technologies | HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; V<sub>CEO</sub> (max): 4.5 V; I<sub>C</sub>(max): 12.0 mA; P<sub>tot</sub> (max): 55.0 mW; f<sub>T</sub> (typ): 22.0 GHz; |
5 pages, |
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| BFY405ES | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| BFY405H | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| BFY405P | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
Original | |
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| BFY405S | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
Original | |
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| Catalog Datasheet | MFG & Type | Document Tags |
| Abstract: BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · 3 , Ordering Code Pin Configuration 1 BFY405 (ql) (ql) Quality Level: - see below C 2 E , example) Semiconductor Group 1 of 5 Draft B, Jul. 98 BFY405 Maximum Ratings Parameter , Semiconductor Group 2 of 5 Draft B, Jul. 98 BFY405 Electrical Characteristics (continued) Parameter , 6 21 612 Semiconductor Group 3 of 5 Draft B, Jul. 98 BFY405 Order Instructions: Full ... | Siemens Original |
5 pages, |
Micro-X marking "K" low noise Micro-X marking "K" BFY405 35 micro-X Package MARKING CODE Q TEXT |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · , Marking Ordering Code Pin Configuration 1 BFY405 (ql) (ql) Quality Level: - see below , ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY405 Maximum Ratings , Semiconductor Group 2 of 5 Draft B, September 99 BFY405 Electrical Characteristics (continued , S12 Semiconductor Group 3 of 5 Draft B, September 99 BFY405 Order Instructions: Full ... | Infineon Technologies Original |
5 pages, |
BFY405 RF TRANSISTOR NPN MICRO-X TEXT |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor 4 HiRel Discrete and Microwave Semiconductor For , 4 E Package BFY405 (ql) - see below C Micro-X (ql) Quality Level: P , ordering example) IFAG IMM RDP D HIR 1 of 4 V2, February 2011 BFY405 Maximum Ratings , BFY405 Electrical Characteristics (continued) Parameter Symbol min. AC Characteristics Transition , Notes.: 1) Gms S 21 S12 IFAG IMM RDP D HIR 3 of 4 V2, February 2011 BFY405 ... | Infineon Technologies Original |
4 pages, |
INFINEON DETAIL transistor C 5611 BFY405 TEXT |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor · · · · · · · · HiRel Discrete and Microwave Semiconductor , E 3 B 4 E Package BFY405 (ql) - see below C Micro-X (ql) Quality Level: P , instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY405 , Semiconductor Group 2 of 5 Draft B, September 99 BFY405 Electrical Characteristics (continued , S 21 S12 Semiconductor Group 3 of 5 Draft B, September 99 BFY405 Order Instructions ... | Infineon Technologies Original |
5 pages, |
micro-X Package MARKING CODE 3 INFINEON DETAIL micro-X Package MARKING CODE C BFY405 TEXT |
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| Abstract: S IE M E N S BFY405 HiRel NPN Silicon RF Transistor ⢠HiRel Discrete and Microwave , Marking Ordering Code Pin Configuration 1 2 BFY405 (ql) - see below C 3 E , M E N S BFY405 Maximum Ratings Parameter Symbol Values Unit Collector-emitter , c t o r G ro u p 2 of 5 Dr aft B, Jul. 98 S IE M E N S BFY405 Electrical , ro u p 3 of 5 Dr aft B, Jul. 98 S IE M E N S BFY405 Order Instructions: Full type ... | OCR Scan |
5 pages, |
BFY405 TEXT |
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| Abstract: Low Current Applications For Oscillators up to 12 GHz BFY405 · Noise Figure F = 1.15 dB at 1.8 , 4 E Package BFY405 (ql) - see below C Micro-X (ql) Quality Level: P , th JS BFY405 Symbol V * CEO V CBO Values 4.5 15 1.5 12 1.0 Unit V V V mA mA mW °C °C °C , = vbe = 0, f = 1 MHz m BFY405 Values typ. max. Unit % 20 CC B - GHz 22 0.05 0.9 PF - , Draft B, Jul. 98 S IE M E N S Order Instructions: BFY405 Full type variant including quality ... | OCR Scan |
5 pages, |
RF TRANSISTOR NPN MICRO-X BFY405 TEXT |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor 4 For Low Current Applications ï· 2 HiRel , ! Type Marking Ordering Code Pin Configuration 1 BFY405 (ql) (ql) Quality Level: - , IMM RDP D HIR 1 of 4 V2, February 2011 BFY405 Maximum Ratings Parameter Symbol Values , IMM RDP D HIR 2 of 4 V2, February 2011 BFY405 Electrical Characteristics (continued , IFAG IMM RDP D HIR 3 of 4 V2, February 2011 BFY405 Micro-X Package 4 Edition 2011-02 3 ... | Infineon Technologies Original |
4 pages, |
BFY405 TEXT |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · For low , device, observe handling precaution! Type Marking BFY405 (ql) - Pin Configuration 1 , 145°C. For T >1 45°C derating is required. S S 2007-08-17 1 BFY405 Thermal Resistance , the pcb. 2This Test assures V (BR)CE0 > 4.5 V 2007-08-17 2 BFY405 Electrical , V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz 1G ms = | S21/ S12 | 2007-08-17 3 BFY405 ... | Infineon Technologies Original |
5 pages, |
MICROWAVE TRANSITOR BFY405 TEXT |
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| Abstract: , 43, 44 BFY180 BFY180, 280, 181, 183, BFY193 BFY193, 196 BFY405, 420, 450, 490 CFY25 CFY25, 27 CFY66 CFY66, 67 CLY29 CLY29, 32, 35, 38 ... | OCR Scan |
1 pages, |
Transistor Packages 1882 BAT DIODES Microwave Semiconductors hirel Siemens Microwave BFY193 Microx 1878 TRANSISTOR microwave transistor bfy193 transistor 1877 k-band gaas schottky diode TEXT |
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| Abstract: BFY420 Package P ... | OCR Scan |
5 pages, |
Microwave Semiconductors 42T1 5106 BFY183 BFY19 BFY193 Microx CFY67-08 GHZ micro-X Package 107 micro-x BXY 36 300 cfy66 TEXT |
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| Abstract: , 43, 44 BFY180 BFY180, 280, 181, 183, BFY193 BFY193, 196 BFY405, 420, 450, 490 CFY25 CFY25, 27 CFY66 CFY66, 67 CLY29 CLY29, 32, 35, 38 ... | OCR Scan |
2 pages, |
cfy transistor 716 transistor 35 CFY TRANSISTOR 726 transistor 717 diode 716 727 diode TEXT |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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No abstract text available
/download/70087617-145421ZC/bfy405.zip () |
Infineon | 08/09/2000 | 340.86 Kb | ZIP | bfy405.zip |
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! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 0.5 V IC = 0.25 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9904 -0.4 0.949 -179.1 0.0004 116.3 0.9999 -0.1 0.020 0.9888 -0.7 0.959 179.1 0.0011 96.7 0.9999 -0.4 0.050 0.9911
/datasheets/files/infineon/ehdata/spar/bfy405/ayv50m25.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ayv50m25.s2p |
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! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.75 V IC = 12 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.6938 -0.9 23.151 179.5 0.0005 135.5 0.9684 0.4 0.020 0.6895 -1.7 23.025 177.4 0.0005 68.9 0.9696 0.0 0.050 0.6965
/datasheets/files/infineon/ehdata/spar/bfy405/ay1v712m.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay1v712m.s2p |
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! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 2.5 V IC = 0.15 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9955 -0.3 0.596 -178.8 0.0002 -177.0 0.9999 -0.2 0.020 0.9945 -0.4 0.599 179.3 0.0008 95.8 0.9983 -0.3 0.050 0.9919
/datasheets/files/infineon/ehdata/spar/bfy405/ay2v5m15.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay2v5m15.s2p |
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! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.75 V IC = 0.7 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9709 -0.3 2.525 -179.1 0.0003 106.5 0.9990 -0.2 0.020 0.9761 -0.8 2.545 179.1 0.0008 107.2 0.9931 -0.3 0.050 0.9713
/datasheets/files/infineon/ehdata/spar/bfy405/ay1v7m70.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay1v7m70.s2p |
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! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 0.5 V IC = 3.5 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8736 -0.6 10.300 -179.4 0.0002 122.6 0.9842 -0.2 0.020 0.8672 -1.4 10.314 178.6 0.0012 81.5 0.9792 -0.6 0.050 0.8709
/datasheets/files/infineon/ehdata/spar/bfy405/ayv503m5.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ayv503m5.s2p |
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! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 2 V IC = 2 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9235 -0.5 6.568 -179.5 0.0001 51.0 0.9968 -0.1 0.020 0.9247 -1.0 6.572 178.7 0.0008 88.6 0.9939 -0.3 0.050 0.9236
/datasheets/files/infineon/ehdata/spar/bfy405/ay2v02m0.s2p |
Infineon | 02/10/1996 | 2.78 Kb | S2P | ay2v02m0.s2p |
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! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 4 V IC = 0.5 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9792 -0.4 1.850 -179.2 0.0001 72.0 0.9990 -0.1 0.020 0.9785 -0.6 1.849 179.1 0.0005 92.3 0.9982 -0.3 0.050 0.9851
/datasheets/files/infineon/ehdata/spar/bfy405/ay4v0m50.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay4v0m50.s2p |
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! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 3 V IC = 1.2 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9512 -0.4 4.179 -179.5 0.0002 97.0 0.9988 -0.1 0.020 0.9548 -1.1 4.166 178.8 0.0004 64.0 0.9999 -0.3 0.050 0.9574
/datasheets/files/infineon/ehdata/spar/bfy405/ay3v01m2.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay3v01m2.s2p |
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! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 0.5 V IC = 3 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8861 -0.6 9.118 -179.4 0.0004 108.3 0.9888 -0.2 0.020 0.8819 -1.1 9.083 178.7 0.0007 92.6 0.9879 -0.6 0.050 0.8853
/datasheets/files/infineon/ehdata/spar/bfy405/ayv503m0.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ayv503m0.s2p |