NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| BFY405 | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| BFY405 (ES) | Infineon Technologies | HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; V<sub>CEO</sub> (max): 4.5 V; I<sub>C</sub>(max): 12.0 mA; P<sub>tot</sub> (max): 55.0 mW; f<sub>T</sub> (typ): 22.0 GHz; |
5 pages, |
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| BFY405ES | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| BFY405H | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| BFY405 (P) | Infineon Technologies | HiRel Silicon Bipolar Transistors; Package: CG-uX-4; Package: Micro-X; V<sub>CEO</sub> (max): 4.5 V; I<sub>C</sub>(max): 12.0 mA; P<sub>tot</sub> (max): 55.0 mW; f<sub>T</sub> (typ): 22.0 GHz; |
5 pages, |
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| BFY405P | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| BFY405S | Infineon Technologies | HiRel NPN Silicon RF Transistor |
5 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · , Marking Ordering Code Pin Configuration 1 BFY405 (ql) (ql) Quality Level: - see below , ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY405 Maximum Ratings , Semiconductor Group 2 of 5 Draft B, September 99 BFY405 Electrical Characteristics (continued , Semiconductor Group 3 of 5 Draft B, September 99 BFY405 Order Instructions: Full type variant ... | Original |
5 pages, |
BFY405 RF TRANSISTOR NPN MICRO-X BFY405 abstract |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · 3 , Ordering Code Pin Configuration 1 BFY405 (ql) (ql) Quality Level: - see below C 2 E , example) Semiconductor Group 1 of 5 Draft B, Jul. 98 BFY405 Maximum Ratings Parameter , Semiconductor Group 2 of 5 Draft B, Jul. 98 BFY405 Electrical Characteristics (continued) Parameter , 6 21 612 Semiconductor Group 3 of 5 Draft B, Jul. 98 BFY405 Order Instructions: Full ... | Original |
5 pages, |
Micro-X marking "K" BFY405 BFY405 abstract |
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| Abstract: BFY405 HiRel NPN Silicon RF Transistor · HiRel Discrete and Microwave Semiconductor · For low , device, observe handling precaution! Type Marking BFY405 (ql) - Pin Configuration 1=C , 145°C. For T >1 45°C derating is required. S S 2007-08-17 1 BFY405 Thermal Resistance , the pcb. 2This Test assures V (BR)CE0 > 4.5 V 2007-08-17 2 BFY405 Electrical , V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz 1G ms = | S21/ S12 | 2007-08-17 3 BFY405 ... | Original |
5 pages, |
MICROWAVE TRANSITOR BFY405 BFY405 abstract |
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| Abstract: HiRel Discrete & Microwave Semiconductors HiRel Discrete & Microwave Semiconductors Radiation Hardness Analysis/Data of Family types: (family given in bracketts) · CGY40 CGY40: (CGY41 CGY41), Side 2 · CFY66 CFY66: (CFY67 CFY67), Side 3 · BXY42 BXY42: (BXY43 BXY43, BXY44 BXY44), Side 4 - 5 · BFY193 BFY193: (BFY180 BFY180, BFY280 BFY280, BFY181 BFY181, BFY182 BFY182, BFY183 BFY183, BFY196 BFY196) Side 6 - 8 · BFY450 BFY450: (BFY405, BFY420 BFY420) Side 9 - 11 Radiation Hardness WS GS HR 12/00 Side 1/11 HiRel Discrete & Microwave Semiconductors Radiation Analysis ... | Original |
11 pages, |
BFY180 BFY181 BFY193 BFY280 BXY42 BXY43 BXY44 CFY66 CFY67 CGY41 BFY183 BFY196 S SCC5513017 ic radiation CGY40 datasheet abstract |
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| Abstract: , 183, BFY193 BFY193, 196 BFY405, 420, 450, 490 12 12 12 13 13 14 14 CFY25 CFY25, 27 CFY66 CFY66, 67 CLY29 CLY29 , Spec. Type Variant V mA mW K/W (2 GHz, (1.8 GHz, 3 V) 2 V) GHz dB BFY405 4.5 12 ... | Original |
21 pages, |
k-band bare BAT15 Micro-X marking "K" BAT14 MMIC Amplifier Micro-X marking 420 radar amplifier s-band 2.7 2.9 GHZ SIEMENS MICROWAVE RADIO BAS40 CFY25 CFY66 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X "Marking k" gaas fet micro-X Package datasheet abstract |
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| Abstract: BAS40 BAS40, 70 BXY42 BXY42, 43, 44 13 BFY180 BFY180, 280, 181, 183, BFY193 BFY193, 196 BFY405, 420, 450 13 13 4.3 , Type Type Variant No. V mA mW K/W GHz dB dB dBm BFY405 4,5 12 ... | Original |
22 pages, |
radar project siemens elektronik siemens gaas fet SIEMENS MICROWAVE RADIO siemens spc 2 x-band microwave fet MSC Microwave Microwave GaAs FET micro x microwave fet IC marking K "micro x" LNA x-band MMIC s-band datasheet abstract |
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| Abstract: Bipolar Microwave Transistors 4.3 BFY180 BFY180, 280, 181, 183, BFY193 BFY193, 196 BFY405, 420, 450 13 13 , No. V mA mW K/W GHz dB dB dBm BFY405 4,5 12 55 545 22 1 ... | Original |
22 pages, |
siemens gaas fet BAS40 BFY180 BFY193 BFY405 Bipolar Transistors BXY42 CFY25 CLX27 CLY29 HPAC140 infineon radar LNA ku-band MSC Microwave datasheet abstract |
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| Abstract: , 183, BFY193 BFY193, 196 BFY405, 420, 450, 490 12 12 12 13 13 14 14 CFY25 CFY25, 27 CFY66 CFY66, 67 CLY29 CLY29 , , (1.8 GHz, (1 .8 G H z , (1.8 GHz, 2 V) 2 V) 3 V) 2 V) dB dB GHz dBm BFY405 4.5 12 ... | Original |
21 pages, |
siemens gaas fet BAS40 BAT14 BAT15 BFY180 BFY193 BFY405 BXY42 CFY25 CFY66 CLY29 LNA ku-band microwave transistor siemens "Microwave Diodes" GaAs Amplifier Micro-X Marking k datasheet abstract |
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| Abstract: age Type Type Variant No. V mA mW K/W GHz dB dB dBm BFY405 4,5 12 ... | Original |
28 pages, |
CLY29 CGY40 CFY67 COBRA RF CFY66 MMIC Amplifier Micro-X marking D BFY450 BFY196 siemens spc BFY193 CGY31 x-band mmic lna "Microwave Diodes" microwave transistor siemens datasheet abstract |
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| Abstract: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices 3 3 Quality Specifications of HiRel Components 5 3.1 Overview on Available HiRel Quality Levels 5 3.2 Wafer Release 6 3.3 HiRel Quality Levels 8 Professional Qua ... | Original |
22 pages, |
transistor "micro-x" "marking" 102 BFY193 BFY196 BFY196 S BFY450 CGY40 COBRA RF GaAs FET cfy 14 HPAC140 LNA ku-band micro-x 420 MMIC Amplifier Micro-X marking 420 MMIC Amplifier Micro-X marking D datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| BFY 405-ES HiRel NPN Silicon RF Transistor BFY 405-H HiRel NPN Silicon RF Transistor BFY 405-P HiRel NPN Silicon RF Transistor BFY 405-S HiRel NPN Silicon RF Transistor B BFY 405 www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1601.htm |
Infineon | 28/10/2000 | 50.7 Kb | HTM | pro~1601.htm |
| No abstract text available www.datasheetarchive.com/download/70087617-145421ZC/bfy405.zip (bfy405.zip) |
Infineon | 08/09/2000 | 340.86 Kb | ZIP | bfy405.zip |
| S-Parameter Files: - Within this directory you are able to see the main operating point information within the filename: For bipolar transistors you have to read as follows: the filename XXAAABBB.S2P is coded: XX internal type definition AAA shows the voltage; V means Volt; the character stands instead of the decimal point ie. 10V means 10Volts; 1V0 means 1.0Volts www.datasheetarchive.com/download/70087617-145421ZC/bfy405.zip (README_BIAS.TXT) |
Infineon | 08/09/2000 | 340.86 Kb | ZIP | bfy405.zip |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.25 V IC = 0.5 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9766 -0.3 1.837 -179.0 0.0001 83.0 0.9997 -0.2 0.020 0.9714 -0.6 1.838 179.1 0.0005 64.8 0.9982 -0.3 0.050 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay1v2m50.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay1v2m50.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 4 V IC = 1.2 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9593 -0.4 4.193 -179.6 0.0002 65.0 0.9988 -0.1 0.020 0.9580 -0.7 4.199 178.8 0.0006 36.9 0.9955 -0.3 0.050 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay4v01m2.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay4v01m2.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 0.75 V IC = 0.15 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9960 -0.3 0.586 -178.9 0.0002 137.5 0.9999 -0.1 0.020 0.9849 -0.5 0.593 179.2 0.0008 69.7 0.9999 -0.3 0.050 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ayv75m15.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ayv75m15.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 0.5 V IC = 1.2 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9508 -0.6 4.145 -179.2 0.0004 137.5 0.9967 -0.2 0.020 0.9498 -0.6 4.134 179.1 0.0009 93.3 0.9936 -0.4 0.050 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ayv501m2.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ayv501m2.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.75 V IC = 1 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.9605 -0.5 3.535 -179.2 0.0003 150.1 0.9988 -0.1 0.020 0.9652 -0.8 3.531 179.0 0.0004 80.2 0.9999 -0.4 0.050 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay1v71m0.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay1v71m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 1.5 V IC = 6 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8066 -0.8 15.444 179.8 0.0003 130.6 0.9841 0.0 0.020 0.8114 -1.5 15.467 178.0 0.0007 85.6 0.9894 -0.4 0.050 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay1v56m0.s2p |
Infineon | 02/10/1996 | 2.79 Kb | S2P | ay1v56m0.s2p |
| ! SIEMENS Small Signal Semiconductors ! BFY405 ! Si NPN RF SIEGET Grounded Emitter Transistor in MICRO-X ! VCE = 3 V IC = 6 mA ! Common Emitter S-Parameters: October 1996 # GHz S MA R 50 ! f S11 S21 S12 S22 ! GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.010 0.8090 -0.7 15.609 179.2 0.0003 103.0 0.9849 0.0 0.020 0.8053 -1.4 15.337 177.5 0.0006 52.9 0.9796 -0.2 0.050 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bfy405/ay3v06m0.s2p |
Infineon | 02/10/1996 | 2.78 Kb | S2P | ay3v06m0.s2p |