BFR91 KT-29 300MHZ 800MHZ - Datasheet Archive

BFR91 The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91 is an NPN silicon epitaxial transistor designed for

PLANETA BFR91 BFR91 The RF Line NPN Silicon High-Frequency Transistor DESCRIPTION The BFR91 BFR91 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. This small-signal plastic transistor offers superior quality and performance at low cost. 1 1 Base 2 Collector 3 Emitter FEATURES Ø Ø Ø 2 3 High Gain-Bandwidth Products fT=5.0 GHz (Typ) @ 30 mA Low Noise Figure NF=1.9 dB (Typ) @ 500 MHz High Gain GPS= 18.0 dB (Typ) @ 500 MHz SOT37 JEDEC EIAJ GOST TO-50 KT-29 KT-29 Weight: 0.2g ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Rating Symbol Unit VCEO VCBO VEBO IC Ptot TJMAX TJ TSTG 12 20 2 50 300 150 -45 to +70 -65 to +150 V V V mA mW °C °C °C RJC Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current Power Dissipation Junction Temperature Operating Junction Temperature Range Storage Temperature Range Value 400 °C/W THERMAL CHARACTERISTIC Thermal Resistance, Junction to Case ORDERING INFORMATION Device BFR91 BFR91 Marking BFR91 BFR91 Package SOT-37 PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia © July 2000 Rev 1 Quantity Packing Style 1 Kpcs / plastic bags In bulk Ph./Fax: +78162231736 E-mail: planeta@novgorod.net http://www.novgorod.net/~planeta BFR91 BFR91 ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Characteristic Symbol Min Typ Max 100 10 Unit DC CHARACTERISTICS Collector Cutoff Current, IE= 0mA, VCB=20V Emitter Cutoff Current, IC= 0mA, VEB= 2V Collector Emitter Breakdown Voltage, IC= 1mA, IB= 0mA DC Current Gain, IE=30mA, VCB= 5V ICBO nA IEBO µA V(BR)CEO V 12 hFE 25 50 150 AC CHARACTERISTICS Transition Frequency, IC=30mA, VCB= 5V, f=300MHz Collector-Base Capacitance, IE= 0mA, VCB=10V, f= 1MHz Noise Figure, IE= 2mA, VCE= 5V, f=500MHz, ZS=50 Power Gain, IE=30mA, VCE= 5V, f=500MHz, ZL=ZLopt IE=30mA, VCE= 5V, f=800MHz, ZL=ZLopt fT GHz 5.0 0.5 0.9 1.9 18.0 13.0 Ccb pF NF dB GPS dB TIPICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) 1 350 Ccb - Collector Base Capacitance (pF Ptot - Total Power Dissipation (mW 300 250 200 150 100 0,8 0,6 0,4 VCB=10V f=1MHZ 0,2 50 0 0 0 20 40 60 80 100 120 140 Tamb - Ambient Temperature (°C) Figure 1. Total Power Dissipation vs. Ambient Temperature Ph./Fax: +78162231736 E-mail: planeta@novgorod.net http://www.novgorod.net/~planeta 2 160 0 5 10 15 20 VCB - Collector Base Voltage (V) Figure 2. Collector Base Capacitance vs. Collector Base Voltage PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia © July 2000 Rev 1 BFR91 BFR91 TIPICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) 3 5 2,5 NF - Noise Figure (dB) 3,5 6 fT - Transition Frequency (GHz 7 4 3 2 2 1,5 1 VCB=5V f=300MHZ 300MHZ VCE=8V f=800MHZ 800MHZ 1 0,5 0 0 0 5 10 15 20 25 30 35 40 45 50 0 5 10 IE - Emitter Current (mA) 20 25 30 35 40 IE - Emitter Current (mA) Figure 3. Transition Frequency vs. Emitter Current Figure 4. Noise Figure vs. Emitter Current 140 12 120 10 100 hFE - DC Current Gain 14 GPS - Power Gain (dB) 15 8 6 4 80 60 40 VCE=5V f=800MHZ 800MHZ VCB=5V 2 20 0 0 0 5 10 15 20 25 30 35 40 IE - Emitter Current (mA) Figure 5. Power Gain vs. Emitter Current PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia © July 2000 Rev 1 0 5 10 15 20 25 30 IE - Emitter Current (mA) Figure 6. DC Current Gain vs. Emitter Current+ Ph./Fax: +78162231736 E-mail: planeta@novgorod.net http://www.novgorod.net/~planeta 3 BFR91 BFR91 PACKAGE DIMENSIONS in mm 6,8max 5°max on counter 8,4max 1max 5.5max 1.4max 0,24max 1,2max 2,7max 5.2max Collector 5.5max Base Emitter PLASTIC CASE KT-29 KT-29 Ph./Fax: +78162231736 E-mail: planeta@novgorod.net http://www.novgorod.net/~planeta 4 PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia © July 2000 Rev 1