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BFR181WH6327XTSA1 Infineon Technologies AG RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 visit Digikey Buy

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Part : BFR 181W H6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0442 Price Each : $0.0517
Part : BFR181WH6327XT Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0377 Price Each : $0.0428
Part : BFR181WE6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 31,570 Best Price : $0.13 Price Each : $0.13
Part : BFR181WE-6327 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 2,600 Best Price : - Price Each : -
Part : BFR181WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 2,280 Best Price : £0.0450 Price Each : £0.0690
Part : BFR181WE6327 Supplier : Siemens Manufacturer : Chip One Exchange Stock : 3,000 Best Price : - Price Each : -
Part : BFR181WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 2,470 Best Price : $0.0964 Price Each : $0.0964
Part : BFR181WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 4,789 Best Price : $0.08 Price Each : $0.4030
Part : BFR181WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 5,009 Best Price : £0.0670 Price Each : £0.2030
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BFR181W Datasheet

Part Manufacturer Description PDF Type
BFR181W Infineon Technologies NPN Silicon RF Transistor Original
BFR181W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BFR181W Siemens NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) Original
BFR181W N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BFR181WE6327 Infineon Technologies TRANS GP BJT NPN 12V 0.02A 3SOT-323 T/R Original
BFR181WE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-323 Original
BFR181WH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 20MA SOT323 Original

BFR181W

Catalog Datasheet MFG & Type PDF Document Tags

BFR181W

Abstract: BCW66 BFR181W NPN Silicon RF Transistor* · For low noise, high-gain broadband amplifiers at collector , ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181W Marking , 2005-10-12 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol , 2005-10-12 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values , | (k-(k²-1) ), 3 2005-10-12 BFR181W SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6
Infineon Technologies
Original
BCW66

SOT23 NE

Abstract: BFR181W foot print BFR181W NPN Silicon RF Transistor* · For low noise, high-gain broadband amplifiers at collector , discharge) sensitive device, observe handling precaution! Type BFR181W Marking RFs 1=B Pin , Application Note Thermal Resistance 1 2007-03-30 BFR181W Electrical Characteristics at TA = 25 , , VCE = 8 V, pulse measured 2 2007-03-30 BFR181W Electrical Characteristics at TA = 25 , 21 / S 12| 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2G 3 2007-03-30 BFR181W SPICE
Infineon Technologies
Original
SOT23 NE BFR181W foot print
Abstract: BFR181W Low Noise Silicon Bipolar RF Transistor â'¢ For low noise, high-gain broadband amplifiers , ) sensitive device, observe handling precaution! Type BFR181W Marking RFs Pin Configuration 1 , AN077 (Thermal Resistance Calculation) 1 2014-04-07 BFR181W Electrical Characteristics at T A , IC = 5 mA, VCE = 8 V, pulse measured 2 2014-04-07 BFR181W Electrical Characteristics at TA , 2014-04-07 BFR181W Total power dissipation P tot = Æ'(TS) Permissible Pulse Load RthJS = Æ'(tp) 10 Infineon Technologies
Original
AEC-Q101

BFR181W

Abstract: VSO05561 BFR181W NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at , BFR181W RFs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter , calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-27-2001 BFR181W , gain - IC = 5 mA, VCE = 8 V 2 Jun-27-2001 BFR181W Electrical Characteristics at TA = , Jun-27-2001 BFR181W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax
Infineon Technologies
Original
VSO05561 10V125V 900MH
Abstract: BFR181W NPN Silicon RF Transistor â'¢ For low noise, high-gain broadband amplifiers at collector , (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181W Marking RFs Pin , please refer to Application Note AN077 Thermal Resistance 1 2010-10-08 BFR181W Electrical , gain - IC = 5 mA, VCE = 8 V, pulse measured 2 2010-10-08 BFR181W Electrical , / S12e | (k-(k²-1) ) 2G 3 2010-10-08 BFR181W Total power dissipation P tot = Æ'(TS Infineon Technologies
Original
Abstract: BFR181W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at 3 , : Electrostatic discharge sensitive device, observe handling precaution! Type BFR181W Maximum Ratings , Thermal Resistance thJA 1 Jun-27-2001 BFR181W Electrical Characteristics at TA = 25 , -27-2001 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter , Jun-27-2001 BFR181W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax Infineon Technologies
Original
Abstract: BFR181W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at 3 , : Electrostatic discharge sensitive device, observe handling precaution! Type BFR181W Maximum Ratings , Thermal Resistance thJA 1 Jun-27-2001 BFR181W Electrical Characteristics at TA = 25 , -27-2001 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter , Jun-27-2001 BFR181W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax Infineon Technologies
Original

AN077

Abstract: BCR108W BFR181W NPN Silicon RF Transistor · For low noise, high-gain broadband amplifiers at collector , discharge) sensitive device, observe handling precaution! Type BFR181W Marking RFs Pin , refer to Application Note AN077 Thermal Resistance 1 2010-10-08 BFR181W Electrical , gain - IC = 5 mA, VCE = 8 V, pulse measured 2 2010-10-08 BFR181W Electrical , BFR181W Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 3 200 mW
Infineon Technologies
Original
BCR108W
Abstract: BFR181W Low Noise Silicon Bipolar RF Transistor â'¢ For low noise, high-gain broadband amplifiers , ) sensitive device, observe handling precaution! Type BFR181W Marking RFs Pin Configuration 1 , Calculation) 1 2013-06-18 BFR181W Electrical Characteristics at T A = 25 °C, unless otherwise , 2 2013-06-18 BFR181W Electrical Characteristics at TA = 25 °C, unless otherwise specified , MHz 1G ms 2G ma = |S 21 / S12 | = |S21e / S12e| (k-(k²-1) 1/2) 3 2013-06-18 BFR181W Infineon Technologies
Original

BF777W

Abstract: BFR93W BFR92P BFR92W BFR93A BFR93P BFR93W BFR106 BFR180 BFR180W BFR181 BFR181W BFR182 BFR182W BFR183 BFR183W
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OCR Scan
BFQ196 BFQ69 BF777W BFP183 BFE193 BF606A BFS480 BF517 BF550 BF554 BF569 BF569W BF579

BGT24MTR11

Abstract: AZ1045-04F BFP182W BFP183 BFP183W BFP193 BFP193W BFP196 BFP196W BFQ19S BFR106 BFR181 BFR181W BFR182 BFR182W BFR183
Infineon Technologies
Original
BGT24MTR11 AZ1045-04F BAR86-02LRH BGA628L7 24GHz Radar ALPHA&OMEGA DATE CODE BF770A BF771 BF799 BF799W BFP181 BFP182

XM0830SJ

Abstract: smd code marking 162 sot23-5 BFR181W BFR182 BFR182W BFR183 BFR183W BFR193 BFR193W BFR340F BFR35AP BFR360F BFR380F BFR92P
Infineon Technologies
Original
XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf BF775 BFP181R BFP182R BFR93AW BFS17P BFS17S

2sc3052ef

Abstract: 2n2222a SOT23 BFQ19S BFR106 BFR181 BFR181W BFR182 BFR182W BFR183 BFR183W BFR193 BFR193W BFR340F BFR35AP
Infineon Technologies
Original
2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BFG135A BFG193 BFG196 BFG19S BFG235 BFS17W

2SK508

Abstract: TEA5767 NPN Silicon Amplifier and Oscillator Transistor (See-A part # for Pb-free) BFR181W NE68030 Closest
Philips Semiconductors
Original
2SK508 TEA5767 2SK147BL IRF power mosfets catalog 2SK163 Funkamateur BB202 BGA6589 BGU2003 BGM1011 BFQ591 BB140-01

nec d882

Abstract: D882 NEC BFR181W NPN Silicon RF Transistor* · For low noise, high-gain broadband amplifiers at collector , ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181W Marking , 2005-10-12 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol , 2005-10-12 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values , | (k-(k²-1) ), 3 2005-10-12 BFR181W SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6
Philips Semiconductors
Original
nec d882 D882 NEC nec d882 p j112 fet ON4831-2 D7540185 F6860HL TEF6862HL

BFQ93A

Abstract: Philips varicap BFR181W Low Noise Silicon Bipolar RF Transistor â'¢ For low noise, high-gain broadband amplifiers , ) sensitive device, observe handling precaution! Type BFR181W Marking RFs Pin Configuration 1 , AN077 (Thermal Resistance Calculation) 1 2014-04-07 BFR181W Electrical Characteristics at T A , IC = 5 mA, VCE = 8 V, pulse measured 2 2014-04-07 BFR181W Electrical Characteristics at TA , 2014-04-07 BFR181W Total power dissipation P tot = Æ'(TS) Permissible Pulse Load RthJS = Æ'(tp) 10
Philips Semiconductors
Original
BFQ93A Philips varicap BFG18 MPF102 modelS philips catv 860 amplifier ic BFG480W

CGD923

Abstract: 2SK163 BFR181W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at 3 , : Electrostatic discharge sensitive device, observe handling precaution! Type BFR181W Maximum Ratings , Thermal Resistance thJA 1 Jun-27-2001 BFR181W Electrical Characteristics at TA = 25 , -27-2001 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter , Jun-27-2001 BFR181W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax
Philips Semiconductors
Original
CGD923 3SK290 BF1009SW bf998 BFG591 amplifier bfq34 application note ICTEF6860HL

BB142

Abstract: 2SK163 BFR181W BFR182 BFR182W BFR183 BFR183W BFR193 BFR193W BFR340F BFR35AP BFR360F BFR380F BFR92P
Philips Semiconductors
Original
BB142 BF245c SMD bap50 spice BB184LX BF1109 spice on4890 TZA30 TEF6860HL
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