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Part Manufacturer Description Datasheet BUY
BFP193WH6327XTSA1 Infineon Technologies AG RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-3 visit Digikey Buy
BFP193E6327HTSA1 Infineon Technologies AG RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, visit Digikey Buy
BFP 193 E6327 Infineon Technologies AG TRANSISTOR NPN RF 12V SOT-143 visit Digikey Buy

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Part : BFP 193 E6327 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0860 Price Each : $0.1007
Part : BFP193E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0759 Price Each : $0.0859
Part : BFP193WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.0456 Price Each : $0.0517
Part : BFP193E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 1,230 Best Price : $0.1120 Price Each : $0.36
Part : BFP193WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 7,566 Best Price : $0.1310 Price Each : $0.43
Part : BFP193E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 6,000 Best Price : $0.0792 Price Each : $0.0809
Part : BFP193E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : - Best Price : $0.1030 Price Each : $0.18
Part : BFP193E6327 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 29,820 Best Price : $0.11 Price Each : $0.11
Part : BFP193E6327 Supplier : Infineon Technologies Manufacturer : Bristol Electronics Stock : 4,696 Best Price : - Price Each : -
Part : BFP193E6327 Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 2,540 Best Price : $0.14 Price Each : $0.2228
Part : BFP193WH6327 Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 2,232 Best Price : $0.1575 Price Each : $0.2818
Part : BFP193E6327 Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 2,210 Best Price : - Price Each : -
Part : BFP193E6327 Supplier : Siemens Manufacturer : Chip One Exchange Stock : 2,995 Best Price : - Price Each : -
Part : BFP 193 E6327 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 10 Best Price : $0.2890 Price Each : $0.2890
Part : BFP 193W H6327 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 10 Best Price : $0.13 Price Each : $0.13
Part : BFP193E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 3,000 Best Price : $0.1390 Price Each : $0.1390
Part : BFP193WH6327XT Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 3,000 Best Price : $0.0875 Price Each : $0.0875
Part : BFP193WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 6,000 Best Price : $0.1165 Price Each : $0.1165
Part : BFP193E6327HTSA1 Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 1,330 Best Price : $0.48 Price Each : $0.48
Part : BFP193E6327HTSA1 Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 1,330 Best Price : $0.48 Price Each : $0.48
Part : BFP193WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 7,666 Best Price : $0.4080 Price Each : $0.4080
Part : BFP193WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 7,666 Best Price : $0.4080 Price Each : $0.4080
Part : BFP193E6327HTSA1 Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 1,235 Best Price : £0.0892 Price Each : £0.2460
Part : BFP193WH6327XTSA1 Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 7,606 Best Price : £0.1380 Price Each : £0.2430
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BFP193 Datasheet

Part Manufacturer Description PDF Type
BFP193 Infineon Technologies For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers Original
BFP193 Siemens NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) Original
BFP193 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BFP193 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BFP193E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-143 Original
BFP193E6327 Infineon Technologies TRANS GP BJT NPN 12V 0.08A 4SOT-143 T/R Original
BFP193E6433 Infineon Technologies TRANS GP BJT NPN 12V 0.08A 4SOT-143 T/R Original
BFP193E6745 Infineon Technologies TRANS GP BJT NPN 12V 0.08A 4SOT-143 T/R Original
BFP193T Vishay Intertechnology Silicon NPN Planar RF Transistor Original
BFP193TRW Vishay Telefunken Silicon NPN Planar RF Transistor Original
BFP193TW Vishay Telefunken Silicon NPN Planar RF Transistor Original
BFP193W Infineon Technologies For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers Original
BFP193W Siemens NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) Original
BFP193W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BFP193WE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-343 Original
BFP193WH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 80MA SOT343 Original

BFP193

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BFP193 NPN Silicon RF Transistor · For low noise, high-gain amplifiers up to 2 GHz · For linear , ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP193 Marking , Resistance Calculation) 1 2012-04-13 BFP193 Electrical Characteristics at T A = 25°C, unless , 2 2012-04-13 BFP193 Electrical Characteristics at TA = 25°C, unless otherwise specified , 1/2 ma = |S21 / S12| (k-(k²-1) ) 3 2012-04-13 BFP193 Total power dissipation P tot = (TS Infineon Technologies
Original
AN077

BFP181

Abstract: BFP193 BFP193 NPN Silicon RF Transistor* · For low noise, high-gain amplifiers up to 2 GHz 3 · For , ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP193 , Resistance 2005-11-02 1 BFP193 Electrical Characteristics at TA = 25°C, unless otherwise specified , 2 BFP193 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values , - 8.5 - 1G 1/2) ma = |S21 / S12| (k-(k²-1) 2005-11-02 3 BFP193 SPICE Parameter
Infineon Technologies
Original
BFP181

BFP181

Abstract: BFP193 BFP193 NPN Silicon RF Transistor* · For low noise, high-gain amplifiers up to 2 GHz 3 · For , discharge) sensitive device, observe handling precaution! Type BFP193 Marking Pin Configuration RCs , Application Note Thermal Resistance 2007-04-20 1 BFP193 Electrical Characteristics at TA = 25 , , VCE = 8 V, pulse measured 2007-04-20 2 BFP193 Electrical Characteristics at TA = 25°C, unless , 3 BFP193 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data
Infineon Technologies
Original

BFP193

Abstract: BFP193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear , discharge sensitive device, observe handling precaution! Type BFP193 Maximum Ratings Parameter , Application Note Thermal Resistance thJA 1 Aug-09-2001 BFP193 Electrical Characteristics at TA = , Aug-09-2001 BFP193 Electrical Characteristics at TA = 25°C, unless otherwise specified , -1)1/2 ) 3 Aug-09-2001 BFP193 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6
Infineon Technologies
Original
VPS05178
Abstract: BFP193 NPN Bipolar RF Transistor â'¢ For low noise, high-gain amplifiers up to 2 GHz 3 â , discharge) sensitive device, observe handling precaution! Type BFP193 Marking Pin Configuration RCs , Calculation) 2For 1 2012-08-08 BFP193 Electrical Characteristics at T A = 25°C, unless , , pulse measured 2 2012-08-08 BFP193 Electrical Characteristics at TA = 25°C, unless otherwise , ²-1) ) 1G 3 2012-08-08 BFP193 Total power dissipation P tot = Æ'(TS) 600 mW 500 Ptot Infineon Technologies
Original
AEC-Q101
Abstract: BFP193 Low Noise Silicon Bipolar RF Transistor â'¢ For low noise, high-gain amplifiers up to 2 , ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP193 , (Thermal Resistance Calculation) 2For 1 2014-04-07 BFP193 Electrical Characteristics at T A , IC = 30 mA, VCE = 8 V, pulse measured 2 2014-04-07 BFP193 Electrical Characteristics at TA , BFP193 Total power dissipation P tot = Æ'(TS) 600 mW 500 Ptot 450 400 350 300 250 200 Infineon Technologies
Original

1.0037

Abstract: BFP193 BFP193 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers up to 2 GHz , BFP193 RCs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings , calculation of R please refer to Application Note Thermal Resistance thJA 1 Aug-09-2001 BFP193 , gain - IC = 30 mA, VCE = 8 V 2 Aug-09-2001 BFP193 Electrical Characteristics at TA = , Aug-09-2001 BFP193 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax
Infineon Technologies
Original
1.0037 900MH
Abstract: BFP193 NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear , discharge sensitive device, observe handling precaution! Type BFP193 Maximum Ratings Parameter , Application Note Thermal Resistance thJA 1 Aug-09-2001 BFP193 Electrical Characteristics at TA = , Aug-09-2001 BFP193 Electrical Characteristics at TA = 25°C, unless otherwise specified , -1)1/2 ) 3 Aug-09-2001 BFP193 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Infineon Technologies
Original

ac 0624 transistor 17-33

Abstract: uc 1604 K/W 1) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Siemens 495 BFP193 , ^CEsat - 90 100 - " 0.4 V 496 Siemens BFP193 AC characteristics Parameter , Gpe dB dB mV 250 31 dBm lS21el2 II - IPs - Siemens 497 BFP193 Total power , -142.0 -145.9 -157.1 -162.1 Siemens 503 BFP193 o l O ^ t t D c s j ^ i n ^ ^ r p o q c o , -j50 -90° 508 Siemens BFP193 Ic = 10 mA, VCE = 8 V, Zq = 50 i i f GHz 0.10 0.15 0.20
-
OCR Scan
ac 0624 transistor 17-33 uc 1604 transistor cq 529 0166 415 04 1 060 F1217

zq 405-MF

Abstract: siemens 30 090 , observe handling precautions! type BFP193 Marking RC Ordering code (tape and reel) Package 1 , BSE D â  flSBbBSO QOlb'îSl 1 BISIP BFP193 SIEMENS/ S P C L i SEMICONDS T-31-19 E , 497 32E D â  Ã23b320 0011^23 5 « S I P BFP193 SIEMENS/ SPCLi SEMICONDS T , - BFP193 T-31-19 Common E m itter Noise Parameters le = 10 mA, Vbe = 8 V, 2b = 50 « f , Siemens 499 BEE D â  Ã"EBbBEQ GQlb^ES H M S I ? BFP193 SIEMENS/ SPCLi SEMICONDS T
-
OCR Scan
zq 405-MF siemens 30 090 GP 819 saa 1070 SAA 1006 62702-F

012n3

Abstract: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz â'¢ For linear broadband amplifiers â'¢ fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic , BFP193 Electrical Characteristics at T& = 25°C, unless otherwise specified. Parameter Symbol ,   SIEMENS BFP193 Electrical Characteristics at r A = 25°C, unless otherwise specified. Parameter , -1)V2) Semiconductor Group 1520 â I 8535bQ5 1998-11-01 SbB â  SIEMENS BFP193
-
OCR Scan
012n3 Q62702-F1282
Abstract: SOT-143 63 BFP193 12 100 700 7.20 1.35 10 8 900 16.0 70 5 , 35 â¡ BFP180 0 BFP181 0 BFP182 â¡ BFP183 0 BFP193 0 BFP280 N N Semiconductor -
OCR Scan
BF517 BF550 BF554 BF569 BF450 BF254
Abstract: BFP193 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)12 V(BR)CBO (V) I(C) Max. (A)80m Absolute Max. Power Diss. (W)400mâ'™ Minimum Operating Temp (øC) Maximum Operating Temp (øC)150â'™ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)10 h(FE) Max. Current gain.100Ã' @I(C) (A) (Test Condition)30m @V(CE) (V) (Test Condition)8 f(T) Min. (Hz) Transition Freq3.5GÃ' @I(C) (A) (Test Condition)5m @V(CE) (V) (Test Condition)8 Power Gain Min. (dB)15Ã' @I(C) (A) (Test American Microsemiconductor
Original

BFT98

Abstract: BF255 BFR35AP BFR93P BFQ19S BFQ81 BFT93 BFT92 BFP193 BFR92P BFP93A BFQ19S - BFQ29P BFQ64 - BFS17P BFS17P
-
OCR Scan
BF199 BF255 BFQ71 BFS55A BFT98 transistors bfs17p BF240 BF241 BF414 BF451

BFQ58

Abstract: BFQ57 BFP193 BFQ181 N 12 20 175 7.00 1.3 - - 900 19.0 - - 900 Cerec-X 54 BFP181 BFQ194 P 15 100 500 5.00 - -
-
OCR Scan
BF840 BF606A BFQ57 BFQ58 BFR34A BFT65 BFT99 RF Bipolar Transistors BFT97 BFP194 00M5M BF599 BF841 BF506

transistor bf 193

Abstract: Siemens ESP 100 8.5 !S2le|2 2) VcE = WcE = BFP193 Values typ. max. Unit h 6 O* CC e ^eb F 2 Sopt Gma 1.3
-
OCR Scan
transistor bf 193 Siemens ESP 100 EHW7222

BF777W

Abstract: BFR93W BFG194 P BFG196 N BFG235 N N BFP81 BFP93A N N BFP180 BFP181 N BFP182 N BFP183 N BFP193 N 15 40 20 35
-
OCR Scan
BFQ196 BFQ69 BF777W BFR93W BFE193 BFS480 BFW92 sot23 BF569W BF579 BF660 BF660W BF770A BF772

XM0830SJ

Abstract: smd code marking 162 sot23-5 BFP182 BFP182R BFP182W BFP183 BFP183W BFP193 BFP193W BFP196 BFP196W BFQ19S BFR106 BFR181
Infineon Technologies
Original
XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf BF771 BF775 BF799 BF799W BFP181R BFR181W

BGT24MTR11

Abstract: AZ1045-04F BFP182W BFP183 BFP183W BFP193 BFP193W BFP196 BFP196W BFQ19S BFR106 BFR181 BFR181W BFR182 BFR182W BFR183
Infineon Technologies
Original
BGT24MTR11 AZ1045-04F BAR86-02LRH BGA628L7 24GHz Radar ALPHA&OMEGA DATE CODE BFR183W BFR193 BFR193W BFR340F BFR360F BFR380F

2sc3052ef

Abstract: 2n2222a SOT23 BFG235 BFP181 BFP181R BFP182 BFP182R BFP182W BFP183 BFP183W BFP193 BFP193W BFP196 BFP196W
Infineon Technologies
Original
2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BFG135A BFG193 BFG19S BFR92W BFR93A BFR93AW

ac 0624 transistor 17-33

Abstract: transistor bfp 196 SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz â'¢ For linear broadband amplifiers â'¢ fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic , BFP193 Electrical Characteristics at T& = 25°C, unless otherwise specified. Parameter Symbol ,   SIEMENS BFP193 Electrical Characteristics at r A = 25°C, unless otherwise specified. Parameter , -1)V2) Semiconductor Group 1520 â I 8535bQ5 1998-11-01 SbB â  SIEMENS BFP193
Siemens
Original
transistor bfp 196 BFP193RCs 0676 marking

NR SOT-143

Abstract: ta 8742 IC BFP193 Low Noise Silicon Bipolar RF Transistor â'¢ For low noise, high-gain amplifiers up to 2 , ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP193 , (Thermal Resistance Calculation) 2For 1 2014-04-07 BFP193 Electrical Characteristics at T A , IC = 30 mA, VCE = 8 V, pulse measured 2 2014-04-07 BFP193 Electrical Characteristics at TA , BFP193 Total power dissipation P tot = Æ'(TS) 600 mW 500 Ptot 450 400 350 300 250 200
Siemens
Original
NR SOT-143 ta 8742 IC

RCs INFINEON SOT-143

Abstract: VPS05178 BFP182W BFP183 BFP183W BFP193 BFP193W BFP196 BFP196W BFQ19S BFR106 BFR181 BFR181W BFR182 BFR182W BFR183
Infineon Technologies
Original
RCs INFINEON SOT-143 145-V10
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