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BFM 4a

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63 ball fbga thermal resistance micron

Abstract: x 32/36, Flow-Through SyncBurst SRAM MT58L2MY18F_16_B.fm - Rev. B, Pub 1/03 ©2003, Micron , . 36Mb: 2 Meg x 18, 1 Meg x 32/36, Flow-Through SyncBurst SRAM MT58L2MY18F_16_B.fm - Rev. B, Pub 1/03 , Meg x 18, 1 Meg x 32/36, Flow-Through SyncBurst SRAM MT58L2MY18F_16_B.fm - Rev. B, Pub 1/03 3 , . 36Mb: 2 Meg x 18, 1 Meg x 32/36, Flow-Through SyncBurst SRAM MT58L2MY18F_16_B.fm - Rev. B, Pub 1/03 , DQc DQd Input/ Output 36Mb: 2 Meg x 18, 1 Meg x 32/36, Flow-Through SyncBurst SRAM MT58L2MY18F_16_B.fm
Micron Technology
Original
63 ball fbga thermal resistance micron MT58V2MV18F MT58L1MY32F MT58V1MV32F MT58L1MY36F MT58V1MV36F 100-P
Abstract: Temperature devices. 18Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM MT55L1MY18P_16_B.fm - Rev. B, Pub , SRAM MT55L1MY18P_16_B.fm - Rev. B, Pub. 11/02 2 Micron Technology, Inc., reserves the right to , SRAM MT55L1MY18P_16_B.fm - Rev. B, Pub. 11/02 3 Micron Technology, Inc., reserves the right to , and 72Mb, respectively. . 18Mb: 1 Meg x 18, 512K x 32/36 Pipelined ZBT SRAM MT55L1MY18P_16_B.fm - , Meg x 18, 512K x 32/36 Pipelined ZBT SRAM MT55L1MY18P_16_B.fm - Rev. B, Pub. 11/02 5 0.16µm Micron Technology
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MT55V1MV18P MT55L512Y32P MT55V512V32P MT55L512Y36P MT55V512V36P MS-026

MT55L1MY36FT-11

Abstract: Industrial Temperature devices. 36Mb: 2 Meg x 18, 1 Meg x 32/36 Flow-through ZBT SRAM MT55L2MY18F_16_B.fm , ZBT SRAM MT55L2MY18F_16_B.fm - Rev. B, Pub. 1/03 2 Micron Technology, Inc., reserves the right , MT55L2MY18F_16_B.fm - Rev. B, Pub. 1/03 3 Micron Technology, Inc., reserves the right to change products , address expansion. 36Mb: 2 Meg x 18, 1 Meg x 32/36 Flow-through ZBT SRAM MT55L2MY18F_16_B.fm - Rev. B , 36Mb: 2 Meg x 18, 1 Meg x 32/36 Flow-through ZBT SRAM MT55L2MY18F_16_B.fm - Rev. B, Pub. 1/03 5
Micron Technology
Original
MT55L1MY36FT-11 MT55V2MV18F MT55L1MY32F MT55V1MV32F MT55L1MY36F MT55V1MV36F 165-B
Abstract: SyncBurst SRAM MT58L1MY18F_16_B.fm - Rev. B; Pub. 11/02 PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN , /36, Flow-Through SyncBurst SRAM MT58L1MY18F_16_B.fm - Rev.B; Pub. 11/02 2 Micron Technology , information. 18Mb: 1 Meg x 18, 512K x 32/36, Flow-Through SyncBurst SRAM MT58L1MY18F_16_B.fm - Rev.B; Pub , , Flow-Through SyncBurst SRAM MT58L1MY18F_16_B.fm - Rev.B; Pub. 11/02 NF/DQPc1 DQc DQc VDDQ VSS DQc DQc DQc , / Output 18Mb: 1 Meg x 18, 512K x 32/36, Flow-Through SyncBurst SRAM MT58L1MY18F_16_B.fm - Rev.B; Pub Micron Technology
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MT58V1MV18F MT58L512Y32F MT58V512V32F MT58L512Y36F MT58V512V36F MO-216
Abstract: SRAM MT58L1MY18D_16_B.fm - Rev. B; Pub 11/02 ©2002, Micron Technology Inc. PRODUCTS AND , , Pipelined, DCD SyncBurst SRAM MT58L1MY18D_16_B.fm - Rev. B; Pub 11/02 2 Micron Technology, Inc , information. 18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM MT58L1MY18D_16_B.fm - Rev. B , , DCD SyncBurst SRAM MT58L1MY18D_16_B.fm - Rev. B; Pub 11/02 NF/DQPc1 DQc DQc VDDQ VSS DQc DQc DQc , DQd Input/ Output 18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM MT58L1MY18D_16_B.fm Micron Technology
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MT58V1MV18D MT58L512Y32D MT58V512V32D MT58L512Y36D MT58V512V36D MT58L512Y3
Abstract: , SCD SyncBurst SRAM MT58L2MY18P1_16_B.fm - Rev. B, Pub 1/03 ©2003, Micron Technology Inc , SyncBurst SRAM MT58L2MY18P1_16_B.fm - Rev. B, Pub 1/03 2 Micron Technology, Inc., reserves the right , information. 36Mb: 2 Meg x 18, 1 Meg x 32/36, Pipelined, SCD SyncBurst SRAM MT58L2MY18P1_16_B.fm - Rev. B , MT58L2MY18P1_16_B.fm - Rev. B, Pub 1/03 NF/DQPc1 DQc DQc VDDQ VSS DQc DQc DQc DQc VSS VDDQ DQc DQc NC VDD NC , , 1 Meg x 32/36, Pipelined, SCD SyncBurst SRAM MT58L2MY18P1_16_B.fm - Rev. B, Pub 1/03 5 Micron Micron Technology
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MT58L2MY18P MT58V2MV18P MT58L1MY32P MT58V1MV32P MT58L1MY36P MT58V1MV36P
Abstract: , Pipelined, DCD SyncBurst SRAM MT58L2MY18D_16_B.fm - Rev. B, Pub. 1/03 1 ©2003, Micron Technology Inc , 2.5V I/O function. 36Mb: 2 Meg x 18, 1 Meg x 32/36, Pipelined, DCD SyncBurst SRAM MT58L2MY18D_16_B.fm , SyncBurst SRAM MT58L2MY18D_16_B.fm - Rev. B, Pub 1/03 3 Micron Technology, Inc., reserves the right to , , DCD SyncBurst SRAM MT58L2MY18D_16_B.fm - Rev. B, Pub 1/03 NF/DQPc1 DQc DQc VDDQ VSS DQc DQc DQc DQc , DQc DQd Input/ Output 36Mb: 2 Meg x 18, 1 Meg x 32/36, Pipelined, DCD SyncBurst SRAM MT58L2MY18D_16_B.fm Micron Technology
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MT58V2MV18D MT58L1MY32D MT58V1MV32D MT58L1MY36D MT58V1MV36D MT58L1MY36DT-10

bfm 11a

Abstract: BFM 4a SRAM MT58L1MY18P1_16_B.fm - Rev. B; Pub 11/02 PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE , MT58L1MY18P1_16_B.fm - Rev. B; Pub 11/02 2 Micron Technology, Inc., reserves the right to change products , Meg x 18, 512K x 32/36, Pipelined, SCD SyncBurst SRAM MT58L1MY18P1_16_B.fm - Rev. B; Pub 11/02 3 , MT58L1MY18P1_16_B.fm - Rev. B; Pub 11/02 NF/DQPc1 DQc DQc VDDQ VSS DQc DQc DQc DQc VSS VDDQ DQc DQc NC VDD , 18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, SCD SyncBurst SRAM MT58L1MY18P1_16_B.fm - Rev. B; Pub 11/02
Micron Technology
Original
bfm 11a BFM 4a MT58L1MY18P MT58V1MV18P MT58L512Y32P MT58V512V32P MT58L512Y36P MT58V512V36P
Abstract: Pipelined ZBT SRAM MT55L2MY18P_16_B.fm - Rev. B, Pub. 1/03 1 ©2003, Micron Technology Inc. PRODUCTS , SRAM MT55L2MY18P_16_B.fm - Rev. B, Pub. 1/03 2 Micron Technology, Inc., reserves the right to , MT55L2MY18P_16_B.fm - Rev. B, Pub. 1/03 3 Micron Technology, Inc., reserves the right to change products , expansion. 36Mb: 2 Meg x 18, 1 Meg x 32/36 Pipelined ZBT SRAM MT55L2MY18P_16_B.fm - Rev. B, Pub. 1/03 , Pipelined ZBT SRAM MT55L2MY18P_16_B.fm - Rev. B, Pub. 1/03 5 Micron Technology, Inc., reserves the Micron Technology
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MT55V2MV18P MT55L1MY32P MT55V1MV32P MT55L1MY36P MT55V1MV36P
Abstract: x 32/36 Flow-through ZBT SRAM MT55L1MY18F_16_B.fm - Rev. B, Pub. 11/02 PRODUCTS AND , , 512K x 32/36 Flow-through ZBT SRAM MT55L1MY18F_16_B.fm - Rev. B, Pub. 11/02 2 Micron Technology , Flow-through ZBT SRAM MT55L1MY18F_16_B.fm - Rev. B, Pub. 11/02 3 Micron Technology, Inc., reserves the , expansion; 36Mb and 72Mb, respectively. 18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM MT55L1MY18F_16_B.fm , Flow-through ZBT SRAM MT55L1MY18F_16_B.fm - Rev. B, Pub. 11/02 5 Micron Technology, Inc., reserves the Micron Technology
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MT55V1MV18F MT55L512Y32F MT55V512V32F MT55L512Y36F MT55V512V36F MS-216

abstract for UART simulation using VHDL

Abstract: VIRTEX-5 DDR2 controller Application Note: Embedded Processing R XAPP1110 (v1.0) April 13, 2009 Abstract BFM , Virtex®-5 FPGA. A Bus Functional Model (BFM) drives the EDK system. Xilinx provides a simulation , Functional Models (BFM) for IBM CoreConnect The Bus Functional Models for PLBv46 are available from http , : System Simulation Since the PLBv46 transactions are done using the IBM Bus Functional Models and BFM , system, uncomment the MicroBlaze processor and comment the three BFM cores in the system.mhs file
Xilinx
Original
ML505 ML555 abstract for UART simulation using VHDL VIRTEX-5 DDR2 controller pcie microblaze XILINX PCIE XPS Central DMA UG197 UG341 XAPP1030 XAPP1111 XAPP1000

HSTL standards

Abstract: micron sram site-http://www.micron.com/numberguide. 256K x 36 2.5V VDD, HSTL, Pipelined DDR SRAM MT57V256H36E_16_B.fm , , Pipelined DDR SRAM MT57V256H36E_16_B.fm - Rev. B, Pub. 1/03 2 Micron Technology, Inc., reserves the , , Pipelined DDR SRAM MT57V256H36E_16_B.fm - Rev. B, Pub. 1/03 3 Micron Technology, Inc., reserves the , : 10A for 72Mb 256K x 36 2.5V VDD, HSTL, Pipelined DDR SRAM MT57V256H36E_16_B.fm - Rev. B, Pub. 1/03 , , Pipelined DDR SRAM MT57V256H36E_16_B.fm - Rev. B, Pub. 1/03 5 Micron Technology, Inc., reserves the
Micron Technology
Original
HSTL standards micron sram MT57V256H36EF-

JQC - 3F -1C

Abstract: DSASL 4A - 4B 4C RAM AD RUM CH RUM CHC R 4D - 4E RBFM M I 3 2 1 , 2 1 0 R XBFM X BFM XBFM XBFM XBFM XBFM XBFM XBFM W 52 XBFM , RAM LD 3 2 1 0 BYTE DMA4 DRAM RBFM M I R BFM D I R 53 RM0D6 SEC
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OCR Scan
JQC - 3F -1C DSASL TC8563 D02fc hard disk toshiba TC8561F 506/E TC8561F-1 TC8561F-88 QFP144-P-2626 625TYP

LDR 03

Abstract: valvo halbleiter W A IT RBCTHL 47 R 7 - RDMAW W BCTH RBCTHU 48 W BCTD RBCTDL 49 W BCTD RBCTDU 4A W
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OCR Scan
LDR 03 valvo halbleiter cny63 LDR -03 CNY62 BYX 71 800

FND LT 542

Abstract: RBL 43 P 530 SE (35 °C) 4A (35 °C) 10 A (35 °C) 6A (100 °C) 90 A (30 °C) 12 A (65 °C) 30 A (35 °C) Typ OSB 9115-4
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OCR Scan
FND LT 542 RBL 43 P 530 SE TMPZ84C00 pins of FND LT 542 TC8561F-87 TC8561F-89 QFP144 TC8561F-90

RPY 86

Abstract: valvo halbleiter virtually unchanged. bfm Switch lpf vco bfm PLL vco lpf Figure 1. Basic Super , 0 0.25 0.5 Figure 4a & 4b. Thin-Film vs NP0 MLC Ceramic 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 Frequency (GHz) Figure 4a shows the
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OCR Scan
RPY 86 BV EI 30-20 3001 CQY 24 RPY94 diode byx 64 600 valvo transistoren DO-34

BFM 4a

Abstract: CP0805 >30dB Hor/Ver 27 '™ dia HDGD24HDGD24- 24 1700-2700 24 8 >24dB Hor/Ver , Discharge, .4dB IL, 3GHz 2.75 x 1.25 x 1.75 4.5oz SP3-90SP3-90-6 -BFM Bulkhead Surge Protector , -230SP6-230-BFF DC-6GHz Bulkhead Surge Protector, Bulkhead N Fem to N Fem 2.4 x 1.2 x 0.9 4.5oz SP6-230SP6-230-BFM
AVX
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CP0805 LP0805 40 gHz spiral antenna LP0603 S-HF0M806-N

BFM 27a

Abstract: Sm -100 -90 dB 3 SH 20 % 4 7*- >0,1 25 % 4 BfM^ Vdt 2 mV 5 Ta=60 , 4IsjhB 1 .'" ('J- K7U-A) «JBt® HgAtfV? v >r- v(i, A y ^- -y'flj® K7U-A£ 1~o -17â'"
Pacific Wireless
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BFM 27a 900MH 928MH YA9WYA9W-11 YA9WYA9W-13 HDGD9HDGD9-15 LP800-2500LP800

ICX229AL

Abstract: BFM 17A Electronics â 1b3H ( bmi bfM wthi H o a d â'¢ ( h n c i n n a l i . 0 1 1 Ibbâ'™Od P h o n o ( b l n ) B/ 1 , core halfway out of the coil form. Carbonyl E & J cores are available 1/', 5/16â' or 3/8â' long
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OCR Scan
ICX229AL ICX209AL BFM 17A LTCM500S CXD1267 J00330A3Z H02-GND
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