500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : BFG591,115 Supplier : NXP Semiconductors Manufacturer : Avnet Stock : 18,000 Best Price : - Price Each : -
Part : BFG591 Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : - Price Each : -
Part : BFG591,115 Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : $0.4680 Price Each : $1.23
Part : BFG591,115 Supplier : NXP Semiconductors Manufacturer : Newark element14 Stock : - Best Price : $0.43 Price Each : $0.43
Part : BFG591,115 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 1 Best Price : $0.7440 Price Each : $0.7440
Part : BFG591 Supplier : NXP Semiconductors Manufacturer : Farnell element14 Stock : - Best Price : £0.3120 Price Each : £0.8140
Part : BFG591,115 Supplier : NXP Semiconductors Manufacturer : Farnell element14 Stock : - Best Price : £0.3680 Price Each : £0.3680
Shipping cost not included. Currency conversions are estimated. 

BFG591 Datasheet

Part Manufacturer Description PDF Type
BFG591 NXP Semiconductors BFG591 - NPN 7 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; fT: 7 GHz; GUM @ f1: 13 dB; GUM @ f2: 7.5 dB; IC: 200 mA; Ptot: 2000 mW; Polarity: NPN ; VCEO max: 15 V Original
BFG591 Philips Semiconductors NPN 7 GHz wideband transistor Original
BFG591 Philips Semiconductors NPN 8 GHz Wideband Transistor Original
BFG591 Philips Semiconductors NPN 7 GHz wideband transistor Scan
BFG591,115 NXP Semiconductors BFG59 - TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal Original
BFG591,115 NXP Semiconductors NPN 7 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; f<sub>T</sub>: 7 GHz; G<sub>UM</sub> @ f1: 13 dB; G<sub>UM</sub> @ f2: 7.5 dB; I<sub>C</sub>: 200 mA; P<sub>tot</sub>: 2000 mW; Polarity: NPN ; VCEO max: 15 V; Package: SOT223 (SC-73); Container: Tape reel smd Original
BFG591T/R NXP Semiconductors TRANS GP BJT NPN 15V 0.2A 4 Original
BFG591TR Philips Semiconductors NPN 7 GHz wideband transistor Original
BFG591T/R N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan

BFG591

Catalog Datasheet MFG & Type PDF Document Tags

BFG591 Application Notes

Abstract: BFG591 amplifier DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product , Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES , pF Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 , transistor BFG591 CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER , BFG591 MGC791 3.0 Ptot (W) 2.5 MRA749 250 handbook, halfpage h FE 200 2.0 150
Philips Semiconductors
Original
BFG591 Application Notes BFG591 amplifier MJE 340 transistor MGC801 MBC964 transistor fp 1016 MSB002 MSA035

BFG591

Abstract: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEA , specification NPN 7 GHz wideband transistor BFG591 LIM ITIN G VALU ES In accordance with the Absolute , BFG591 C H A R A C T E R IS T IC S Tj = 25 °C (unless otherwise specified). SYM BOL PAR AM ETER , BFG591 MRA749 250 hFE 200 150 100 50 lb '2 10~1 1 10 lc (mA) 102 , Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC79S MGC794 10
-
OCR Scan
7110A2

BFG591 Application Notes

Abstract: BFG591 amplifier DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product , Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES , 2 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 , transistor BFG591 CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER , BFG591 MGC791 3.0 Ptot (W) 2.5 MRA749 250 handbook, halfpage hFE 200 2.0 150
Philips Semiconductors
Original
npn transistor high current DIN45004B

BFG591 amplifier

Abstract: BFG591 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES , NPN 7 GHz wideband transistor BFG591 LIMITING VALUES In accordance with the Absolute Maximum Rating , GHz wideband transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). BFG591 SYMBOL , specification NPN 7 GHz wideband transistor BFG591 3.0 Hot (W) 2.5 2.0 1.5 1.0 0.5 50 MGC791 100 150 , Manufacturer Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 25 gain
-
OCR Scan
equivalent of SL 100 NPN Transistor 2T3 transistor sl 100 Transistor Equivalent list SL 100 NPN Transistor NPN power transistor spice transistor 9206

BFG591,115

Abstract: BFG591 Application Notes DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product , base emitter collector 1 Top view BFG591 DESCRIPTION NPN silicon planar epitaxial transistor in , to Ts = 80 C; note 1 CONDITIONS open emitter open base open collector 65 MIN. BFG591 MAX , GHz; Tamb = 25 C s 21 Vo Notes 2 BFG591 MIN. 20 15 3 60 TYP. MAX. 100 250 , Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC791 3.0 Ptot (W) 2.5
NXP Semiconductors
Original
R77/02/ 771-BFG591-T/R

BFG591

Abstract: DISCRETE SEMICONDUCTORS DAT BFG591 NPN 7 GHz wideband transistor Product specification , wideband transistor BFG591 FEATURES DESCRIPTION ï'· High power gain NPN silicon planar , NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 LIMITING , Product specification NPN 7 GHz wideband transistor BFG591 CHARACTERISTICS Tj = 25 ï'°C (unless , transistor BFG591 MGC791 MRA749 250 3.0 Ptot (W) 2.5 handbook, halfpage hFE 200
NXP Semiconductors
Original

SOT23 W1P

Abstract: MARKING W1P SOT143 1999 Jul 21 2 N44 T1 T2 BFG591 N0 N2 FA FF FB BFQ34/01 V2p V2 BFQ68 BFQ135 , SOT143 SOT143 SOT343 BFG590/X BFG590W BFG590W/X BFG591 BFM505 BFM520 BFQ17 BFQ18A BFQ19 , BFG198 BFG541 SOT223 SOT223 SOT223 BFG135 BFG198 BFG541 BFG591 BFQ34/01 BFQ68 BFQ135 BFQ136 SOT223 SOT122E SOT122E SOT172 SOT122E BFG591 BFQ34 BFQ68 BFQ135 BFQ136 BFQ270
Philips Semiconductors
Original
SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 BF547 BF547W BF747 BFC505 BFG11 BFG11/X

BFG540 N43

Abstract: w1p 22 SOT363 BFG591 N0 N2 SOT89 SOT89 SOT89 FA FF FB SOT122E SOT23 BFQ34/01 V2p , BFG591 BFM505 BFM520 V12 V26 P8 SOT223 SOT143 SOT143 SOT143 BFG520 BFG520/X BFG520/XR , V1p V10 W1p W1 X1p X1 PSH10 BFG541 BFG591 SOT223 SOT223 BFG541 BFG591 BFQ34/01
Philips Semiconductors
Original
BFG540 N43 w1p 22 sot143 Marking code V12 f763 SOT89 MARKING CODE BF689K BFG67 BFG67R BFG67/X BFG67/XR BFG92A

BFG591 Application Notes

Abstract: BFG591 DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product , NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION High power gain NPN silicon , specification NPN 7 GHz wideband transistor BFG591 LIMITING VALUES In accordance with the Absolute , Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 CHARACTERISTICS Tj = 25 C , Product specification NPN 7 GHz wideband transistor BFG591 MGC791 MRA749 250 3.0 Ptot
NXP Semiconductors
Original

SOT23 W1P

Abstract: BFG540 N43 BFG540W BFG540W/X BFG540W/XR BFG541 BFG590 BFG590/X BFG590/XR BFG590W BFG590W/X BFG590W/XR BFG591 BFM505 , BFG591 NO N2 FA FF FB BFQ34/01 V2p V2 BFQ68 BFQ135 BFQ136 FG BFQ270 PACKAGE SOT23 SOT323 SOT54 SOT23 , BFG591 BFQ34/01 BFQ68 BFQ135 BFQ136 BFQ270 BFQ621 BFR94A E1 E1p E2 E2p E6p E15 E16 F689K F763 FA FB FF FG , SOT323 TYPE NUMBER BFG16A BFG31 BFG35 BFG94 BFG97 BFG135 BFG198 BFG541 BFG591 BFQ34 BFQ68 BFQ135
-
OCR Scan
sot143 Marking code p1 sot143 sot343 w1p code SOT23 W1P 27 SOT23 MARKING N72 BF763 BFC520 BFE505 BFE520 BFG10 BFG10/X

BFG591

Abstract: BFG591 amplifier ^53131 GD314bb S23 â  APX -iBPrelimir^^ BFG591 LIE Dâ"¢ Philips Semiconductors | NPN 8 GHz wideband transistor iâ'"N AMER PHILIPS/DISCRETE FEATURES PINNING â'¢ High power gain PIN DESCRIPTION â'¢ Low noise figure 1 emitter â'¢ High transition frequency 2 base â'¢ Gold metallization ensures 3 emitter excellent reliability. 4 collector DESCRIPTION The BFG591 is an NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as MATV/CATV amplifiers and RF
-
OCR Scan
philips MATV amplifiers GD314 50K/W
Abstract: Philips Semiconductors bbSB'lBl 0D31Mbb 2E3 â  APX Preliminary specification NPN 8 GHz wideband transistor â'" â'" BFG591 N AUER PHILIPS/DISCRETE fc^E J>" PINNING FEATURES DESCRIPTION â'¢ High power gain PIN â'¢ Low noise figure 1 emitter â'¢ High transition frequency 2 base â'¢ Gold metallization ensures excellent reliability. 3 emitter 4 collector DESCRIPTION The BFG591 is an NPN silicon planar epitaxial transistor -
OCR Scan
0D31M

BFE505

Abstract: BFRS20 ) BFG540(/X)(/XR) BFG590(/X)(/XR) BFG10(/X) BFG11(/X) BFG541 BFG591 SOT223 SOT323 BFS25A BFS505 BFS520 , BFG591 BFQ540 BFQ621 BFR50S BFRS20 BFR540 BFS25A BFS505 BFS520 BFS540 BFT25A 2) V c E s j- S 0 -
-
OCR Scan
SOT-343 BFR505 BFR520 BFG25A/X BFG505 BFG25AW BFG505W

BFG520

Abstract: BFQ67 O SC Driver amp PA1 BFG540/X BFG590/X BFQ67 BFR520 BFG67/X BFG520/X BFG35 BFG198 BFG541 BFG591 . , BFG67/X BFG505/X BFG520/X BFG67/X BFG520/X BFG540/X BFG540/X BFG590/X BFG10/X BFG11/X BFG541 BFG591
-
OCR Scan
BFR92A BFR93AW BFR93A Philips RF PREAMP cordless phone circuit blt81 sot103 BFR92AW BFG92A/X BFQ67W

BFG591 amplifier

Abstract: SC08a BFG590/XR BFG591 BFG621 (note 1) BFG741 (note 1) (21) (22) BFR521 (note 1) (23) BFR541 (note 1) (24 , BFG591 BLT50 (note 2) BFG135 BFG621 (note 3) PA3 BLT80 (note 2) BLT81 (note 2) Notes 1. 2. 3. European , (note 2) BFG741 (note 2) BLT11 4th 3rd 4th 4th BFG591 PA2 and PC1 PB1 PB2 BFG540/X BFG590/X
-
OCR Scan
SC08a sot173x BB544 bfr591 BFG65 philips bfw92 BFS17W BFG17A BF747W BFT25 BFS17 BFS17A
Abstract: BFG591 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.2 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Max. Current gain.250 @I(C) (A) (Test Condition)90m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq8GÃ' @I(C) (A) (Test Condition)90m @V(CE) (V) (Test Condition)10 Power Gain Min. (dB)12Ã' @I(C) (A) (Test Condition American Microsemiconductor
Original

BFG505W

Abstract: BFG520W BFG541 BFG590 BFG590/X BFG590/XR BFG590W BFG590W/X BFG590W/XR BFG591 BFM505 BFM520 BFQ17 BFQ18A BFQ19
-
OCR Scan
BFG403W BFG520W BFG10W/X BFG11W/X BFQ149 BFR53 BFR92 BFR93

BFQ67W

Abstract: ) BFG590 (/X)(/XR) (22) BFS25A BFR540 (21) BFG25A/X BFR520 (20) BFG591 BFG590W , ) (22) NPN SOT343 15 200 500 BFG591 (22) NPN SOT223 15 200 2000 , 7.5 2000 BFG590W(/X)(/XR) 5 13 900 7.5 2000 80 5 BFG591 7 13 900
Philips Semiconductors
Original
BFT93 BFR106 BFT92W BFG93A BFT93W BFT92

BFG591 amplifier

Abstract: BFM505 ) BFG590 (/X)(/XR) BFQ621 BFG10(/X) BFG11(/X) BFG541 BFG591 SURFACE-MOUNT SOT223 SOT323 BFS25A BFS505 , )(/XR) BFG591 BFM505 BFM520 Note 1V CE S - Selection guide » t /Ic CURVE (see Fig.1) (20) (21) (21 , )(/XR) BFG590W(/X)(/XR) BFG591 BFM505 BFM520 Note 1. At dim = -6 0 dB, measured according to DIN45004B
-
OCR Scan
S0T343 Philips Semiconductors Selection Guide BLt92 sot172 BFG197 DCS1800

BFC505

Abstract: BFG520W BFG92A/X 218 BFG591 394 BFT93W 657 BFG92A/XR 218 BFM505 403 BLT70 674
Philips Semiconductors
Original
transistor BFR92 BFG410W BFG425W BFG505/XR BFG505W/X BFG505W/XR BFG520W/X

transistor 20107

Abstract: transistor dk 50 ) BFG590 (/X)(/XR) BFQ621 BFG10(/X) BFG11(/X) BFG541 BFG591 SURFACE-MOUNT SOT223 SOT323 BFS25A BFS505 , )(/XR) BFG540W(/X)(/XR) BFG541 BFG590(/X)(/XR) BFG590W(/X)(/XR) BFG591 BFM505 BFM520 Note 1VcES , ) BFG540(/X)(/XR) BFG540W(/X)(/XR) BFG541 BFG590(/X)(/XR) BFG590W(/X)(/XR) BFG591 BFM505 BFM520 Note 1. At
-
OCR Scan
transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note DK 51* transistor bfg520 antenna preamplifier SA5200 SA611 SA2420 SA621 SA1620 SA1921
Showing first 20 results.