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BFG196 Datasheet

Part Manufacturer Description PDF Type
BFG196 Infineon Technologies For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz Original
BFG196 Siemens NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications) Original
BFG196 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BFG196 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BFG196E6327 Infineon Technologies TRANS GP BJT NPN 12V 0.15A 4 Original
BFG196E6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 12V SOT-223 Original

BFG196

Catalog Datasheet MFG & Type PDF Document Tags

BFG196

Abstract: VPS05163 BFG196 NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in , BFG196 BFG196 Pin Configuration 1=E 2=B 3=E Package 4=C SOT223 Maximum Ratings , calculation of R thJA please refer to Application Note Thermal Resistance 1 Jun-27-2001 BFG196 , gain - IC = 50 mA, VCE = 8 V 2 Jun-27-2001 BFG196 Electrical Characteristics at TA = , Jun-27-2001 BFG196 Total power dissipation Ptot = f (TS ) 900 mW P tot 700 600 500
Infineon Technologies
Original
VPS05163 BFG196 equivalent 900MH
Abstract: BFG196 NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in , : Electrostatic discharge sensitive device, observe handling precaution! Type BFG196 Maximum Ratings Parameter Marking BFG196 1=E Pin Configuration 2=B 3=E 4=C Package SOT223 Symbol VCEO VCES VCBO VEBO IC IB , to Application Note Thermal Resistance 1 Jun-27-2001 BFG196 Electrical Characteristics , 2 Jun-27-2001 BFG196 Electrical Characteristics at TA = 25°C, unless otherwise specified Infineon Technologies
Original

bfg196 "sot223"

Abstract: BCP52-16 BFG196 NPN Silicon RF Transistor* · For low noise, low distortion broadband amplifiers in , ! Type BFG196 Marking Pin Configuration BFG196 1 = E 2 = B 3 = E 4 = C - Package - SOT223 , Resistance 2005-10-11 1 BFG196 Electrical Characteristics at TA = 25°C, unless otherwise specified , 2 BFG196 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values , 6.5 - 1G 1/2) ma = |S21 / S12| (k-(k²-1) 2005-10-11 3 BFG196 Total power
Infineon Technologies
Original
bfg196 "sot223" BCP52-16

BFG196

Abstract: BCP52-16 BFG196 NPN Silicon RF Transistor* · For low noise, low distortion broadband amplifiers in , (Electrostatic discharge) sensitive device, observe handling precaution! Type BFG196 Marking Pin Configuration BFG196 1 = E 2 = B 3 = E 4 = C - Package - SOT223 Maximum Ratings Parameter Symbol , calculation of RthJA please refer to Application Note Thermal Resistance 2007-04-20 1 BFG196 , gain- - IC = 50 mA, VCE = 8 V, pulse measured 2007-04-20 2 BFG196 Electrical
Infineon Technologies
Original
Abstract: BFG196 NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in , : Electrostatic discharge sensitive device, observe handling precaution! Type BFG196 Maximum Ratings Parameter Marking BFG196 1=E Pin Configuration 2=B 3=E 4=C Package SOT223 Symbol VCEO VCES VCBO VEBO IC IB , to Application Note Thermal Resistance 1 Jun-27-2001 BFG196 Electrical Characteristics , 2 Jun-27-2001 BFG196 Electrical Characteristics at TA = 25°C, unless otherwise specified Infineon Technologies
Original

marking BFG

Abstract: GMA marking BFG 196 NPN Silicon RF Transistor For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3 Power amplifier for DECT and PCN Systems 2 fT = 7.5 GHz 1 F = 1.5 dB at 900 GHz VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFG 196 BFG196 Pin Configuration 1=E 2=B 3=E Package 4=C SOT-223 Maximum Ratings
Infineon Technologies
Original
marking BFG GMA marking
Abstract: SIEMENS NPN Silicon RF Transistor · For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA · Power amplifier for DECT and PCN systems · fy = 7.5GHz F = 1.5 dEJ at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 196 BFG196 Q62702-F1292 1= E 2=B 3=E 4=C BFG 196 Package SOT-223 Maximum Ratings Parameter Collector-emitter -
OCR Scan

BFQ58

Abstract: BFQ57 - - - - - - Cerec-X 55 BFP194 BFQ196 N 12 100 500 8.00 1.4 - - 900 18.0 - - 900 Cerec-X 54 BFG196
-
OCR Scan
BF199 BF840 BF450 BF451 BF606A BFQ57 BFQ58 BFT99 RF Bipolar Transistors BFT97 00M5M BF599 BF240 BF241

BFG196

Abstract: Q62702-F1292 BFG 196 NPN Silicon RF Transistor · For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA · Power amplifier for DECT and PCN systems · fT = 7.5GHz F = 1.5 dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 196 SOT-223 BFG196 Q62702-F1292 1=E 2=B 3=E 4=C Maximum Ratings Parameter
Siemens
Original
Abstract: SIEMENS BFG 196 NPN Silicon RF Transistor â'¢ For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5GHz at collector currents from 20mA to 80mA â'¢ Power amplifier for DECT and PCN systems â'¢ f j = 7.5GHz F = 1.5 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFG 196 BFG196 Q62702-F1292 1 =E 2=B Package 3= E 4=C SOT -
OCR Scan
D15177 D1S17 D1217
Abstract: 5.00 - - SOT-223 12 0 BFG196 N N N N 12 100 800 7 20 SOT-223 11 -
OCR Scan
BF517 BF550 BF554 BF569 BF254 BF970

BF777W

Abstract: BFR93W BFG194 P BFG196 N BFG235 N N BFP81 BFP93A N N BFP180 BFP181 N BFP182 N BFP183 N BFP193 N 15 40 20 35
-
OCR Scan
BFQ69 BF777W BFR93W BFE193 BFS480 BFW92 sot23 BF569W BF579 BF660 BF660W BF770A BF772

BGT24MTR11

Abstract: AZ1045-04F N = NPN P = PNP BF517 BF770A BF771 BF775 BF799 BF799W BFG135A BFG193 BFG196 BFG19S
Infineon Technologies
Original
BFR181W BGT24MTR11 AZ1045-04F BAR86-02LRH BGA628L7 24GHz Radar ALPHA&OMEGA DATE CODE BFP182R BFP182W BFP183W BFP193W BFP196 BFP196W

XM0830SJ

Abstract: smd code marking 162 sot23-5 - - - - - - Cerec-X 55 BFP194 BFQ196 N 12 100 500 8.00 1.4 - - 900 18.0 - - 900 Cerec-X 54 BFG196
Infineon Technologies
Original
XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf BFP181R BFQ19S BFR106 BFR181 BFR182 BFR182W

2SC3355 SPICE MODEL

Abstract: transistor C2003 5.00 - - SOT-223 12 0 BFG196 N N N N 12 100 800 7 20 SOT-223 11
Agilent Technologies
Original
2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file LF2810A LF2802A F2001 F2002 F2003 F2004
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