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RI-TRP-WFOB-01 Texas Instruments KEYRING TAG (READ WRITE) 1-RFIDP -40 TO 70 visit Texas Instruments
RI-ANT-S01C-00 Texas Instruments SERIES 2000 STICK ANTENNA 1- -30 TO 85 visit Texas Instruments
RI-UHF-11111-01 Texas Instruments EPC GEN2 INTEGRATED CIRCUIT PROCESSED AND UNPROCESSED WAFERS visit Texas Instruments
RI-UHF-00001-01 Texas Instruments EPC GEN2 INTEGRATED CIRCUIT PROCESSED AND UNPROCESSED WAFERS 1-WAFERSALE visit Texas Instruments
RI-TRP-R9QL-20 Texas Instruments 30MM DISK TRANSPONDER 1-RFIDP -25 TO 85 visit Texas Instruments
RI-UHF-STRAP-08 Texas Instruments UHF GEN2 STRAP 1-RFIDS visit Texas Instruments

BF494 h parameters

Catalog Datasheet MFG & Type PDF Document Tags

BF494

Abstract: bf494 pin configuration Certified Manufacturer NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494 BF495 TO-92 Plastic , 200 110 35 65 40 221 500 215 125 135 85 BF494 BF494A BF494B BF 495 BF 495C BF 495D , BF494 BF495 TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise , pF Page 2 of 4 BF494 BF495 TO-92 Plastic Package TO-92 Plastic Package B Ammo Pack Style Uncontrolled MECHANICAL DATA h P T h (p) A1 LABEL H1 Carrier
Continental Device India
Original
bf494 pin configuration BF 495c pin configuration bf494 TRANSISTOR equivalent bf494 equivalent TRANSISTOR BF495 transistors bf494 C-120

bf494 pin configuration

Abstract: BF494 SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494 BF495 TO-92 Plastic Package High Voltage Video , 40 221 500 215 125 135 85 BF494 BF494A BF494B BF 495 BF 495C BF 495D Continental , BF494 BF495 TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise , pF Page 2 of 4 BF494 BF495 TO-92 Plastic Package TO-92 Plastic Package B Ammo Pack Style Uncontrolled MECHANICAL DATA h P T h (p) A1 LABEL H1 Carrier
Continental Device India
Original
bf495 pin configuration 495d transistor BF494 high frequency transistor BF494 BF495C BF495 transistor

BF 495c pin configuration

Abstract: SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494 BF495 TO-92 Plastic Package High Voltage Video , 40 221 500 215 125 135 85 BF494 BF494A BF494B BF 495 BF 495C BF 495D Continental Device India Limited Data Sheet Page 1 of 4 NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF494 , Page 2 of 4 BF494 BF495 TO-92 Plastic Package TO-92 Plastic Package Ammo Pack Style B MECHANICAL DATA Uncontrolled h Carrier Strip P T h (p) A1 LABEL A H1
Continental Device India
Original

transistor C9012

Abstract: transistor c9018 ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ#$ #!"! 9 h vpÃuvhyuhrÃprpv ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ#% TDA8351/56 , 8 Ã ` S U @ H P @ B 7 B S U T S U I TDA 884X CPSÃ9SDW@ U V P B U V P S G 6 8 D U S @ W X @ H P @ B Application Note AN98051 ( I D , V Q U V P Ã S U T Ã @ V G 7 7 B S G P S U I H P Ã 8 ` U B 6 T Y D S U 6 U V Q I D H Ã Ã 7 7 B B S S Y D S U 6 S V I U D T U
Philips Semiconductors
Original
transistor C9012 transistor c9018 dc05 7 segments TDA7075AQ UV1315 tda8842 circuit diagram GTV1000 TDA884X C1023 C1020 C1035 C9010

smd npn 2n2222

Abstract: tunnel diode 45 25 200 350 25 SELECTION GUIDE CHARACTERISTICS h FE (hfe ) at 'c mA fT , ARACTERISTIC S h FE (hfe> (1 2 5 -7 0 0 ) at *C mA fT MHz typ. F dB typ. remarks , n-p-n 30 25 30 25 at ^am b at OC IlFE (h fe) at â'¢c mA fT MHz typ. F dB , RATINGS at Tamb at ° C h FE (hfe> at fT MHz typ. 'c mA F dB typ. 2PA733 , * 3 1,6 > 500 TO-92 var. 40 25 250 45 BF494 n-p-n TO-92 var. 20 30
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smd npn 2n2222 tunnel diode BSR62 equivalent BF494 h parameters BC369 transistor bc547 PH in metal detector 2PC1815L 2PC1815 7Z88986

pin configuration transistor BC547 smd packaging

Abstract: BC547 smd packaging respective Data Sheet be undertaken so as to confirm that the Device(s) meet functionality parameters for the , Sheet be undertaken so as to confirm that the Device(s) meet functionality parameters for the users , confirm that the Device(s) meet functionality parameters for the users application. These products are , parameters for the users application. These products are not designed for use in life saving/life support , that the Device(s) meet functionality parameters for the users application. These products are not
Continental Device India
Original
pin configuration transistor BC547 smd packaging BC547 smd packaging BD469 c5198 C2N3904 BC337 TO-92 Generic DO-35 DO-41 DO-15 DO-201AD DO-41P LL-34

transistor 2N3906 smd 2A SOT23

Abstract: BC327-40 SMD undertaken so as to confirm that the Device(s) meet functionality parameters for the users application , Sheet be undertaken so as to confirm that the Device(s) meet functionality parameters for the users , confirm that the Device(s) meet functionality parameters for the users application. These products are , parameters for the users application. These products are not designed for use in life saving/life support , that the Device(s) meet functionality parameters for the users application. These products are not
Continental Device India
Original
transistor 2N3906 smd 2A SOT23 BC327-40 SMD DIAC DB2 A1941 C5198 application notes W04M pin configuration D1 DB2 Diac LS-31 LS-34 LL-41 DO-213AB DO-214AC DO-214AA

BD469

Abstract: DIAC DB2 completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for , Data Sheet be undertaken so as to confirm that the Device(s) meet functionality parameters for the , functionality parameters for the users application. These products are not designed for use in life saving/life , functionality parameters for the users application. These products are not designed for use in life saving/life , (s) meet functionality parameters for the users application. These products are not designed for use
Continental Device India
Original
C2N5551 cbc337 SMD SOT23 transistor MARK Y2 A1941 1N4007 MINI MELF KBPC8010

PT895

Abstract: 2n6259 ssi , Manufacturers Service Representative ENGINEERING EDITORS Kerin Klukowski Janice H. Perley Frederick A. West , . Notice the sequencing parameters in top right corner of the page 7. SILICON FIELD EFFECT TRANSISTORS - N , the manufacturer code and thus the name. h. Local offices of the manufacturer can be found in Section , [TEST COnB Vg$ Vp TVgs &Vds«0j PARAMETERS COMMON SOCTiCE' IN ORDER OF (1) DISSIPATION (21 TYPE No , electrical parameters surrounding the known number to determine the suitable alternatives. Symbols and codes
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PT895 2n6259 ssi Germanium itt STA93 PTC SY 16P MMT*3960A 201069F S-171 CH-5400

W1p 48 TRANSISTOR

Abstract: transistor w1P 83 Letter symbols 79 S-parameters 85 D EVIC E DATA (in a lp h an u m eric sequence) 89 , TYPE NUMBER VC O B (V) ^CE O (V) CHARACTERISTICS lc (mA) P« (mW) h FE min , semiconductors CHARACTERISTICS RATINGS TYPE NUMBER h PE - 7.5 0.85 687 - 7.5 0.85 , ) ^C E O 60 45 (V) at h FE L (mA) (mW) at lr min. max. (mA) 500 1500 , (V) ^ceo (V ) lc (A) CHARACTERISTICS P,c (W ) h FE min. at lc (A) at ^C
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W1p 48 TRANSISTOR transistor w1P 83 transistor BD139 PH 71 W1P 59 transistor transistor SMD marked RNW transistor w1P 91 197/197X S310N

transistor f6 13003

Abstract: equivalent transistor bj 131-6 . Mounting and Soldering recommendations fo r CATV H y b rid s , parameters , -126 envelopes Thermal Characteristics of SOT23, SOT143, SOT223, SOT37 and SOT103 envelopes CA TV parameters , parameters TYPE DESIGNATION PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type , '", multiples of such devices and semiconductor chips. "A lth o u g h not all type numbers accord w ith the Pro
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transistor f6 13003 equivalent transistor bj 131-6 BB112 BFQ25 BU705 BFR95

BGY41

Abstract: BFW10 FET transistor . Scattering parameters , . B. C. D. E. F. G. H. L. N. P. Q. R. S. T. U. X. Y. Z. DIODE; signal, low power , SWITCHING DEVICE; e.g. thyristor, low power (Rt h j-mb > 15 K/W) TRANSISTOR; low power, switching (Rth j-mb > 15 K/W) CONTROL AND SWITCHING DEVICE; e.g. thyristor, power (Rt h j-m b < 15 K/W) TRANSISTOR; power , supply voltage. 22 May 1983 S-PARAMETERS J V SCATTERING PARAMETERS In d istin ctio n to
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BGY41 BFW10 FET transistor CQY58 germanium RX101 JFET BFW10 SPECIFICATIONS LCD01

germanium

Abstract: KPL 3009 Comments The coding determines the significance of the electrical parameters given in the columns , transistors Transistors no sym bol-* B, -ft P, () -» P, U + -ft P. hFE h2 E , 1 h,e, h21 (at 1kHz) e hfe , Field-effect transistors no symbol - * lD UD , S () UG s no symbol - * lc 0 - f t lE * -ft lB xix 1 k H z , shorted h â'ž = 1/yâ'ž or h*, = l/G * input admittance, output shorted y â'ž or y* noise voltage Vn , are only depicted symbolically, and various static and dynamic parameters have had to be omitted for
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KPL 3009 BLY34 AF339 ADY20 bf197 BDY38 C9/C10

APY12

Abstract: BAV77 Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E , power, high frequency G. MULTIPLE OF DISSIMILAR DEVICES-MISCELLANEOUS (e .g .osci11ators ) H. DIODE , I5.c/H Code de designation des semiconducteurs Ce code de designation s'applique aux , osci11ateurs) H. DIDDE : sensible aux champs magnetiques L. TRANSISTOR : puissance, haute frequence N , : BPW50/6 , BPW50/9 , BPW50/12 NOTE : Faible puissance : Puissance j_mb > 15°C/W : Rt h j . mb i
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APY12 BAV77 bux transient voltage suppressor BAV12 ASY80 RTc BD142 NS348 NS349 NS256 NS357 BS3934 SO-26