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Part : BF259 Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 100 Best Price : - Price Each : -
Part : BF259 Supplier : STMicroelectronics Manufacturer : Bristol Electronics Stock : 500 Best Price : - Price Each : -
Part : BF259 Supplier : Continental Device India Manufacturer : TME Electronic Components Stock : 987 Best Price : $0.2780 Price Each : $0.6480
Part : BF259 Supplier : STMicroelectronics Manufacturer : ComSIT Stock : 390 Best Price : - Price Each : -
Part : BF259 Supplier : STMicroelectronics Manufacturer : Chip One Exchange Stock : 100 Best Price : - Price Each : -
Part : PBF259 Supplier : Motorola Manufacturer : Chip One Exchange Stock : 3,500 Best Price : - Price Each : -
Part : PBF259 Supplier : Motorola Manufacturer : Chip One Exchange Stock : 2,000 Best Price : - Price Each : -
Part : PBF259RS Supplier : Motorola Manufacturer : Chip One Exchange Stock : 3,500 Best Price : - Price Each : -
Part : PBF259RSRL1 Supplier : Motorola Manufacturer : Chip One Exchange Stock : 2,000 Best Price : - Price Each : -
Part : PBF259ZL1 Supplier : Motorola Manufacturer : Chip One Exchange Stock : 1,850 Best Price : - Price Each : -
Part : PBF259ZLI Supplier : Motorola Manufacturer : Chip One Exchange Stock : 1,500 Best Price : - Price Each : -
Part : BF259 Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 775 Best Price : $0.42 Price Each : $0.7420
Part : BF259 Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : - Best Price : £0.3520 Price Each : £0.5410
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BF259 Datasheet

Part Manufacturer Description PDF Type
BF259 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=300 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Original
BF259 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=300 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Original
BF259 STMicroelectronics HIGH VOLTAGE VIDEO AMPLIFIER Original
BF259 Continental Device India Semiconductor Device Data Book 1996 Scan
BF259 Crimson Semiconductor Transistor Selection Guide Scan
BF259 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
BF259 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
BF259 Micro Electronics Semiconductor Device Data Book Scan
BF259 Micro Electronics NPN HIGH VOLTAGE VIDEO AMPLIFIER - Pol=NPN / Pkg=TO39 / Vceo=300 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Scan
BF259 Micro Electronics High Voltage Transistors Scan
BF259 Micro Electronics Semiconductor Devices Scan
BF259 Motorola Motorola Transistor Datasheets Scan
BF259 Motorola The European Selection Data Book 1976 Scan
BF259 Motorola European Master Selection Guide 1986 Scan
BF259 N/A Semiconductor Master Cross Reference Guide Scan
BF259 N/A Shortform Transistor Datasheet Guide Scan
BF259 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BF259 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BF259 N/A Shortform Electronic Component Datasheets Scan
BF259 N/A Basic Transistor and Cross Reference Specification Scan
Showing first 20 results.

BF259

Catalog Datasheet MFG & Type PDF Document Tags

bf257

Abstract: BF257.258 SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259 TO-39 Metal Can Package INTENDED FOR VIDEO , Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 300 V VEBO Peak , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5 , BF257, BF 258, BF259 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G , Notes BF257, BF 258, BF259 TO-39 Metal Can Package Disclaimer The product information and the
Continental Device India
Original
BF257.258 C-120

BF257

Abstract: BF259 Thermal Resistance, Junction to Case R«JC 35 °C/W 1EE 0 I k3b?E54 GOAtM? M | BF257 thru BF259 CASE , CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 30 mAdc, la = 0) BF257 BF258 BF259 V(BR)CE0 160 250 300 â'" - Vdc Collector-Base Breakdown Voltage (IC = 100 pAdc, Ie = 0) BF257 BF258 BF259 V(BR)CBO 160 , ) BF259 ICBO â'" 1 1 1 50 50 50 nAdc ON CHARACTERISTICS DC Current Gain dC = 30 mAdc, VcE = 10 Vdc
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transistors bf259 BF257 MOTOROLA BF258-BF259

BF259

Abstract: BF259 High Voltage Power Transistors Application: · Devices with breakdown voltages of 160V , . Base 3. Collector Page 1 31/05/05 V1.0 BF259 High Voltage Power Transistors Absolute Maximum Ratings Parameter Symbol BF259 Collector Base Voltage VCBO Collector Emitter , Test Condition BF259 Collector Emitter Voltage VCEO IC = 10mA, IB = 0 >300 Collector , .0 BF259 High Voltage Power Transistors Specifications VCEO maximum (V) IC(av) maximum (A) hFE
Multicomp
Original

BF258

Abstract: BF257 BF257 BF258-BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for , for BF257 for BF258 for BF259 Min. Typ. Unit 50 50 50 V CB = 100 V V CB = 200 V V , µA for BF257 for BF258 for BF259 160 250 300 V V V V ( BR) CEO * Collector-emitter Breakdown Voltage (I B = 0) I C = 10 mA for BF257 for BF258 for BF259 160 250 300
STMicroelectronics
Original
BF257-BF258-BF259 bf258bf bf258 equivalent transistor BF 257 bf259 datasheet BF257 THOMSON P008B

7500B

Abstract: ic 7500B THE EF257» BF258, BF259 AREâ'žNPH SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACK-AND-WHITE AND COLOUR TV-RECEIVERS. CASE TO-39 C E B ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage ^CBO Collector-Emitter Voltage vqeo Emitter-Base Voltage vebo Collector Current Total , BF258 BF259 160V 250V 300V 160V 25OV 300V 5V 100mA 5W 800mW -65 to 200°C THERMAL RESISTANCE Junction , : 3-41032 1 â'¢ PARAMETER SYMBOL BP257 MDT MAX BF258 MIN MAX BF259 MIN MAX UÃTIT TEST CONDITIONS - â
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7500B ic 7500B dc 7500B BF251

BF257

Abstract: BF259 Certified Manufacturer NPN SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259 TO-39 Metal Can , Voltage VCBO Collector Base Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5 , BF257, BF 258, BF259 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G , BF257, BF 258, BF259 TO-39 Metal Can Package Disclaimer The product information and the selection
Continental Device India
Original

bf259

Abstract: bf258 0 0 U nit Vdc Vdc Vdc Vdc Ade Watt mW/°C Watt mW/°C °C BF259 CASE 79-04, STYLE 1 TO-39 (TO , Breakdown Voltage dC = 3 0 mAdc, la = 0) V (B R )C EO BF257 BF258 BF259 V (B R )C B O BF257 BF258 BF259 V , BF258 BF259 1 1 1 80 0.1 Vdc nAdc - - - 50 50 50 - 1.0 - Vdc O N C H A R A C T E R
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BF259

Abstract: BF257 SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259 TO-39 Metal Can Package INTENDED FOR VIDEO , Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 300 V VEBO Peak , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5 , BF257, BF 258, BF259 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G , BF257, BF 258, BF259 TO-39 Metal Can Package Disclaimer The product information and the selection
Continental Device India
Original

BF257

Abstract: BF258 Certified Manufacturer NPN SILICON HIGH VOLTAGE POWER TRANSISTORS BF257, BF258, BF259 TO-39 Metal , Current Gain Collector Emitter Saturation Voltage BF259 300 300 hFE BF257 >160 >160 TEST , =6mA SYMBOL fT BF259 >300 >300 , , BF258, BF259 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H J , Page 2 of 3 Notes BF257, BF258, BF259 TO-39 Metal Can Package Disclaimer The product
Continental Device India
Original
BF259 CDIL 100MH 231202E

BF258

Abstract: BF259 TRANZYSTORY n-p-n * BF257, BF258 i BF259 20-74/2 1 Tranzystory krzemowe planarne áredniej mocy wielkiej czçstotliwosci. Sg przeznaczone do stosowania we wzmacniaczach duzych sygnalów , eksploatacyjnych Typ BF257 BF258 BF259 Napiçcie kolektor-baza Ucb o 160 250 300 V Napiçcie kolektor , 1 mA, / = 0,5 MHz Cues TRANZYSTOR BF259 Parametry statyczne przy tamb = 298 K (25°C) Pr^d , ( brjeb0 5 BF 257 BF258 BF259 - S V
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tranzystory bf 695 0jm0 C22B M100 1111II

bf258

Abstract: 'Zf v y ^ iÃ* \ ~"l ^ B F 257 â  B F 258 â  B F 259 'NPN HIGH VOLTAGE VIDEO AMPLIFIER .VîtfAÿï'^B ïÃSaWî?1A ^ i K ! , â ÃXÃ'c-l^B « . V.d'.tr J THE BF257, BF258, BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACKAND-WHITE AND COLOUR TV-RECEIVERS. C E B BF257 ABSOLUTE MAXIMUM RATINGS EF258 BF259 , (TA=250C unless otherwise noted) BP257 MIN MAX BF258 MIN MAX BF259 UNIT MIN MAX
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S3363 7300B

BC207b

Abstract: BC113 SGS 40 150 10 40 3.5 3531 IC 66 BF258 250 1000 40 150 10 40 3.5 35312A 66 BF259 300 1000 25 â'" 30 90 , =25"C. Outline Drawing No. 66 applies to BF257, BF258, BF259 only. Max. ratings Characteristics m 25°C Code , BF259 300 300 100 25 30 50 250 1 30/6 31269F »BSY79 120 120 30 30 1 50 90 0.5 2/0.2 7861G â'¢NOTE , BF258 1 250 250 0.1 25 30 31520E 66 BF259 1 300 300 0.1 25 30 31521C 66 BF457 1.25 160 160 0.1 25 30
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BC113 BC114 BC115 BC207 BC207A BC208A BC207b BC113 SGS BC209B 35289X 35Z90C

sx3704

Abstract: BRC157 V Texas BF259 Base X SG S/ATES BF259 Base X M otorola BF259 Base X VT109* Texas BF259 Base V SG S/ATES BF259 Base V M otorola BF259 Base V VT110* Texas BF259 Base V SG S/ATES BF259 Base V M otorola BF259 *VT108, VT109, VT110â'" do not m ix alternatives VT108 * Diodes W101 W102 , . *VT105, VT106, VT107â'" do no t m ix alternatives Base \ VT108* Texas BF259 Base \ SG S/ATES BF259 . Base \ M otorola BF259 Base \ VT109* Texas BF259 Base SG S/ATES BF259 . M otorola
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sx3704 BRC157 Germanium Diode aa143 BRC-116 BY238 1n4148 ITT VT701 R2540 VT702 1N4005 BZX83-C30 BZX79-C30

BF259

Abstract: BF236 \ ) BF 257 â  BF 258 â  BF 259 THE BF257, BF258, BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACK-AND-WHITE AND COLOUR TV-RECEIVERS. CASE TO-39 C E B ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V^H) Collector-Emitter Voltage VqeO Emitter-Base Voltage VebO Collector Current ic Total Power Dissipation @ Tc ^25°C Ptot @Ta^25°C Operating Junction & Storage Temperature Tj, Tstg BF257 BF236 BF259 l60V 250V 300V 160V 250V 300V 5V 100mA 5W 800mW -65 to 200Â
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3-00B4

2n2222 itt

Abstract: 2N2222A itt =25"C. Outline Drawing No. 66 applies to BF257, BF258, BF259 only. Max. ratings Characteristics m 25°C Code , BF259 300 300 100 25 30 50 250 1 30/6 31269F »BSY79 120 120 30 30 1 50 90 0.5 2/0.2 7861G â'¢NOTE
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2N2218 2N2218A 2N2219 2N2219A 2N2221 2N2221A 2n2222 itt 2N2222A itt itt 2n2222 BSY86 BSY85 itt 2N2222A 31275X 27786X
Abstract: 3G E D â  T 'ì a 'is a ? G o a D ^ s GL SGS-THOMSON J*l®IILi(gÂ¥^MO(gS S G 3 â  T ^ S Ï T o s BF257 BF258-BF259 S -T H O M S O N HIGH VOLTAGE VIDEO AMPLIFIERS D ESC RIPTIO N The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for video out­ put stages in CTV and , . ABSOLUTE MAXIMUM RATINGS S ym b o l V a lu e P a ra m e te r U n it BF257 B F 25 8 BF259 -
OCR Scan
T-33-05 EO160V

2n2222 itt

Abstract: BSY86 . 66 applies to BF257, BF258, BF259 only. Max. ratings Characteristics m 25°C Code VcBO (V) Vceo (V , 160 160 100 25 30 50 100 1 30/6 31267X BF258 250 250 100 25 30 50 200 1 30/6 31268H BF259 300 300 , BF257 1 160 160 0.1 25 30 31519B 66 BF258 1 250 250 0.1 25 30 31520E 66 BF259 1 300 300 0.1 25 30
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BSX20 BSX26 2N914 2N2369 2N2369A BC119 ME6002 ME6102 BFY72 MA8003 BFY50 35250H 35251F 35252D

BF336

Abstract: PE7058 transistor BF259 300 25/- 0.03 1.0 0.03 75 1.0 TO-39 9 D40N3F 300 30/90 0.02 â'" â'" 40 10 Dynawatt 10 D40N4F , 300 40/200 30 40 4.0 1230 4.17 TO-92 21 BF259 300 25/- 30 90 (Typ) 4.2 1000 7.0 TO-39 22 MPSA92
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BF336 BF337 BF338 D40N1F D40N2F 2N5059 PE7058 transistor SE7055 2N5832 SE7056

BF337

Abstract: 2N5832 40/200 30 50 3.0 878 2.08 TO-92 20 PE7059 300 40/200 30 40 4.0 1230 4.17 TO-92 21 BF259 300 25/- , Dynawatt 7 D40N2F 250 60/180 0.02 â'" â'" 40 10 Dynawatt 8 BF259 300 25/- 0.03 1.0 0.03 75 1.0 TO-39 9
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BC533 MPS5551M 2N5831 2N5833 BD115 2N4926 FAIRCHILD TO-106 2N5058

BF259

Abstract: BF259 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016) 0.53 (0.021) dia. IC = 0.1A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications
Semelab
Original

BF259

Abstract: bf 233 U, CBO -'CEO 7EBO tot stg BF 257 BF 258 BF259 160 250 300 V 160 250 300 V 5 V 100 mA 5
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bf 233 BF 235 bf 258 bf 236 A1233

BF258

Abstract: BF259 VrFn1 6( (BF2 57) -» (BF258) VCE0 250V (BF259) \tEO 300V I .
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210E transistor 139 BF

BF259

Abstract: BF258 ) h\ -t -T ' r1 (second breakdown)- CBF257) VCEq 160V (BF258) VCEO 250V (BF259) \£E0 300V 10
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EIF257

transistor BF 257

Abstract: BF257 40 150 10 40 3.5 3531 IC 66 BF258 250 1000 40 150 10 40 3.5 35312A 66 BF259 300 1000 25 â'" 30 90 , =25"C. Outline Drawing No. 66 applies to BF257, BF258, BF259 only. Max. ratings Characteristics m 25°C Code , BF259 300 300 100 25 30 50 250 1 30/6 31269F »BSY79 120 120 30 30 1 50 90 0.5 2/0.2 7861G â'¢NOTE , BF258 1 250 250 0.1 25 30 31520E 66 BF259 1 300 300 0.1 25 30 31521C 66 BF457 1.25 160 160 0.1 25 30
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OCR Scan
ltls signaux BF 259 C22E

KT 819 transistor

Abstract: 2N2222A 338 retrofit. BF259 VCEO(SUS) = 300V h =25 min. @ 30mA 40850 VCERlsusl = 400 V hFE = 25 min. @ 750 mA tT = , 10W max 2N3439* BF257 BF258 BF259 2N4063 2N4064 High Voltage, High-Speed High Voltage
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KT 819 transistor 2N2222A 338 SF129D SF137D SSY20B KT819W 400MH
Showing first 20 results.