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BF258 Datasheet

Part Manufacturer Description PDF Type
BF258 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Original
BF258 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Original
BF258 STMicroelectronics HIGH VOLTAGE VIDEO AMPLIFIER Original
BF258 Continental Device India Semiconductor Device Data Book 1996 Scan
BF258 Crimson Semiconductor Transistor Selection Guide Scan
BF258 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan
BF258 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan
BF258 Micro Electronics Semiconductor Device Data Book Scan
BF258 Micro Electronics NPN HIGH VOLTAGE VIDEO AMPLIFIER - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Scan
BF258 Micro Electronics High Voltage Transistors Scan
BF258 Micro Electronics Semiconductor Devices Scan
BF258 Motorola Motorola Transistor Datasheets Scan
BF258 Motorola The European Selection Data Book 1976 Scan
BF258 Motorola European Master Selection Guide 1986 Scan
BF258 N/A Semiconductor Master Cross Reference Guide Scan
BF258 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BF258 N/A Shortform Transistor Datasheet Guide Scan
BF258 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BF258 N/A Shortform Electronic Component Datasheets Scan
BF258 N/A Basic Transistor and Cross Reference Specification Scan
Showing first 20 results.

BF258

Catalog Datasheet MFG & Type PDF Document Tags

BF258

Abstract: BF257 BF257 BF258-BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are , Unit BF 257 BF258 BF25 9 V CBO Collector-base Voltage (I E = 0) 160 250 300 V V , for BF257 for BF258 for BF259 Min. Typ. Unit 50 50 50 V CB = 100 V V CB = 200 V V , µA for BF257 for BF258 for BF259 160 250 300 V V V V ( BR) CEO * Collector-emitter Breakdown Voltage (I B = 0) I C = 10 mA for BF257 for BF258 for BF259 160 250 300
STMicroelectronics
Original
BF257-BF258-BF259 bf258bf bf258 equivalent transistor BF 257 bf259 datasheet transistors bf259 P008B

BF258

Abstract: BF259 TRANZYSTORY n-p-n * BF257, BF258 i BF259 20-74/2 1 Tranzystory krzemowe planarne áredniej , eksploatacyjnych Typ BF257 BF258 BF259 Napiçcie kolektor-baza Ucb o 160 250 300 V Napiçcie kolektor , mA, f = 0,5 MHz Cues â'" 2,5 pF 20-74/2 2 ícbo TRANZYSTOR BF258 Parametry statyczne przy , ( brjeb0 5 BF 257 BF258 BF259 - S V , ; Ia =0,2/7)4 [mA] 60 50 40 20 10 BF 257 BF258 BF 259
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OCR Scan
tranzystory bf 695 0jm0 C22B M100 1111II

BF257

Abstract: BF258 Certified Manufacturer NPN SILICON HIGH VOLTAGE POWER TRANSISTORS BF257, BF258, BF259 TO-39 Metal , BF258 250 250 BF257 160 160 VEBO IC ICM DYNAMIC CHARACTERISTICS DESCRIPTION Transition , ) BF258 >250 >250 >5 MIN TYP 75 2.5 UNITS V V V nA nA nA V MAX UNITS MHz pF , , BF258, BF259 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H J , Page 2 of 3 Notes BF257, BF258, BF259 TO-39 Metal Can Package Disclaimer The product
Continental Device India
Original
BF259 CDIL 100MH C-120 231202E

BF257

Abstract: BF259 CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 30 mAdc, la = 0) BF257 BF258 BF259 V(BR)CE0 160 250 300 â'" - Vdc Collector-Base Breakdown Voltage (IC = 100 pAdc, Ie = 0) BF257 BF258 BF259 V(BR)CBO 160 , Collector Cutoff Current (VCB = 100 Vdc, Ie = 0) BF257 (Vcb = 200 Vdc, Ie = 0) BF258 (VCB = 250 Vdc, Ie = 0
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OCR Scan
BF257 MOTOROLA

7500B

Abstract: ic 7500B THE EF257» BF258, BF259 AREâ'žNPH SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACK-AND-WHITE AND COLOUR TV-RECEIVERS. CASE TO-39 C E B ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage ^CBO Collector-Emitter Voltage vqeo Emitter-Base Voltage vebo Collector Current Total , BF258 BF259 160V 250V 300V 160V 25OV 300V 5V 100mA 5W 800mW -65 to 200°C THERMAL RESISTANCE Junction , : 3-41032 1 â'¢ PARAMETER SYMBOL BP257 MDT MAX BF258 MIN MAX BF259 MIN MAX UÃTIT TEST CONDITIONS - â
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OCR Scan
7500B ic 7500B dc 7500B BF251

sx3704

Abstract: BRC157 NPN . Base K 3D215 Silicon Power NPN High Voltage S ilicon NPN BF337 BF258 19 , TIS91 (coded green, blue, violet or grey) Texas BF258 . SGS/ATES BF258 , , violet or grey) Texas BF258 . SGS/ATES BF258 . Texas BC184LC . Texas BC184LB . Texas TIS91 (coded green, blue, violet or grey) Texas BF258 . SG S/ATES BF258 Base Base Base Base Base Base Base Base Base Base Base A W G W
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OCR Scan
sx3704 BRC157 Germanium Diode aa143 BRC-116 BY238 BC107/spice model bf199 VT701 R2540 VT702 1N4005 BZX83-C30 BZX79-C30

BC207b

Abstract: BC113 SGS 40 150 10 40 3.5 3531 IC 66 BF258 250 1000 40 150 10 40 3.5 35312A 66 BF259 300 1000 25 â'" 30 90 , =25"C. Outline Drawing No. 66 applies to BF257, BF258, BF259 only. Max. ratings Characteristics m 25°C Code , ) Stock No. BF257 160 160 100 25 30 50 100 1 30/6 31267X BF258 250 250 100 25 30 50 200 1 30/6 31268H , BF258 1 250 250 0.1 25 30 31520E 66 BF259 1 300 300 0.1 25 30 31521C 66 BF457 1.25 160 160 0.1 25 30
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OCR Scan
BC113 BC114 BC115 BC207 BC207A BC208A BC207b BC113 SGS BC209B 35289X 35Z90C

bf259

Abstract: bf258 Breakdown Voltage dC = 3 0 mAdc, la = 0) V (B R )C EO BF257 BF258 BF259 V (B R )C B O BF257 BF258 BF259 V , BF258 BF259 1 1 1 80 0.1 Vdc nAdc - - - 50 50 50 - 1.0 - Vdc O N C H A R A C T E R
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OCR Scan

bf258

Abstract: 'Zf v y ^ iÃ* \ ~"l ^ B F 257 â  B F 258 â  B F 259 'NPN HIGH VOLTAGE VIDEO AMPLIFIER .VîtfAÿï'^B ïÃSaWî?1A ^ i K ! , â ÃXÃ'c-l^B « . V.d'.tr J THE BF257, BF258, BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACKAND-WHITE AND COLOUR TV-RECEIVERS. C E B BF257 ABSOLUTE MAXIMUM RATINGS EF258 BF259 , (TA=250C unless otherwise noted) BP257 MIN MAX BF258 MIN MAX BF259 UNIT MIN MAX
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OCR Scan
S3363 7300B

BF259

Abstract: BF258 BF 257 BF 258 BF 259 SILICON PLANAR NPN HIGH VOLTAGE VIDEO AMPLIFIERS The EIF257, BF258 arid BF 259 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are particularly designed for video output stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. ABSOLUTE MAXIMUM RATINGS BF 257 BF 258 BF 259 VcBO Collector-base voltage , ) h\ -t -T ' r1 (second breakdown)- CBF257) VCEq 160V (BF258) VCEO 250V (BF259) \£E0 300V 10
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OCR Scan

BF258

Abstract: BF259 BF 257 BF 258 SILICON PLANAR NPN BF 259 HIGH VOLTAGE VIDEO AMPLIFIERS The BF 257, BF258 and BF 259 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are particularly designed for video output stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. ABSOLUTE MAXIMUM RATINGS BF 257 BF 258 BF 259 VcBO Collector-base voltage , VrFn1 6( (BF2 57) -» (BF258) VCE0 250V (BF259) \tEO 300V I .
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OCR Scan
210E BF 258 transistor 139 BF

2n2222 itt

Abstract: 2N2222A itt =25"C. Outline Drawing No. 66 applies to BF257, BF258, BF259 only. Max. ratings Characteristics m 25°C Code , ) Stock No. BF257 160 160 100 25 30 50 100 1 30/6 31267X BF258 250 250 100 25 30 50 200 1 30/6 31268H
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OCR Scan
2N2218 2N2218A 2N2219 2N2219A 2N2221 2N2221A 2n2222 itt 2N2222A itt itt 2n2222 BSY86 BSY85 itt 2N2222A 31275X 27786X
Abstract: 3G E D â  T 'ì a 'is a ? G o a D ^ s GL SGS-THOMSON J*l®IILi(gÂ¥^MO(gS S G 3 â  T ^ S Ï T o s BF257 BF258-BF259 S -T H O M S O N HIGH VOLTAGE VIDEO AMPLIFIERS D ESC RIPTIO N The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for video out­ put stages in CTV and , Is/b (second breakdown) - I' lì â -ft}: It [BF257) \fcEO160V (BF258) 250V B F 2 5 9 X -
OCR Scan
T-33-05 EO160V

BF336

Abstract: PE7058 transistor 50 1.0 TO-39 4 BF338 225 20/- 0.03 â'" 50 1.0 TO-39 5 BF258 250 25/- 0.03 1.0 0.03 75 1.0 TO , 4.17 TO-92 14 BF338 225 20/- 30 80 (3.5) 800 â'" TO-39 15 BF258 250 40/150 10 40 3.5 1000 7.0 TO
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OCR Scan
BF336 D40N1F D40N2F D40N3F 2N5059 SE7055 PE7058 transistor 2N5832 SE7056 BD115 D40N4F

2n2222 itt

Abstract: BSY86 . 66 applies to BF257, BF258, BF259 only. Max. ratings Characteristics m 25°C Code VcBO (V) Vceo (V , 160 160 100 25 30 50 100 1 30/6 31267X BF258 250 250 100 25 30 50 200 1 30/6 31268H BF259 300 300 , BF257 1 160 160 0.1 25 30 31519B 66 BF258 1 250 250 0.1 25 30 31520E 66 BF259 1 300 300 0.1 25 30
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OCR Scan
BSX20 BSX26 2N914 2N2369 2N2369A BC119 ME6002 ME6102 BFY72 MA8003 BFY50 35250H 35251F 35252D

bf257

Abstract: BF257.258 Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 300 V VEBO Peak , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5
Continental Device India
Original
BF257.258

BF259

Abstract: BF257 Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 300 V VEBO Peak , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5
Continental Device India
Original

BF337

Abstract: 2N5832 -39 15 BF258 250 40/150 10 40 3.5 1000 7.0 TO-39 16 2N4927 250 20/200 30 30 (6.0) 1000 7.0 TO-39 17 , 1.0 TO-39 5 BF258 250 25/- 0.03 1.0 0.03 75 1.0 TO-39 6 D40N1F 250 30/90 0.02 â'" â'" 40 10
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OCR Scan
BC533 MPS5551M 2N5831 2N5833 2N4926 MPSA43 FAIRCHILD TO-106 2N5058 pe7059

BF257

Abstract: BF259 Voltage VCBO Collector Base Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5
Continental Device India
Original
Abstract: BF258 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 250V 5.08 (0.200) typ. IC = 0.1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS Semelab
Original

BF259

Abstract: bf 233 BF 257 BF 258 BF 259 SILICON PLANAR NPN HIGH VOLTAGE VIDEO AMPLIFIERS The EIF257, BF258 arid BF 259 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are particularly designed for video output stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. ABSOLUTE MAXIMUM RATINGS BF 257 BF 258 BF 259 VcBO Collector-base voltage , ) h\ -t -T ' r1 (second breakdown)- CBF257) VCEq 160V (BF258) VCEO 250V (BF259) \£E0 300V 10
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OCR Scan
bf 233 BF 235 bf 236 A1233

transistor BF 257

Abstract: BF257 BF 257 BF 258 SILICON PLANAR NPN BF 259 HIGH VOLTAGE VIDEO AMPLIFIERS The BF 257, BF258 and BF 259 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are particularly designed for video output stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. ABSOLUTE MAXIMUM RATINGS BF 257 BF 258 BF 259 VcBO Collector-base voltage , VrFn1 6( (BF2 57) -» (BF258) VCE0 250V (BF259) \tEO 300V I .
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OCR Scan
ltls signaux BF 259 C22E

RCA 40636 transistor

Abstract: rca 40636 \ ) BF 257 â  BF 258 â  BF 259 THE BF257, BF258, BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACK-AND-WHITE AND COLOUR TV-RECEIVERS. CASE TO-39 C E B ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V^H) Collector-Emitter Voltage VqeO Emitter-Base Voltage VebO Collector Current ic Total Power Dissipation @ Tc ^25°C Ptot @Ta^25°C Operating Junction & Storage Temperature Tj, Tstg BF257 BF236 BF259 l60V 250V 300V 160V 250V 300V 5V 100mA 5W 800mW -65 to 200Â
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OCR Scan
RCA 40636 transistor rca 40636 rca 40327 RCA 40325 40327 rca RCA 2N3055 transistor TQ-66 2N6177 2N3439 2N5415 2N358S 2N6213

RCA 2N3055 transistor

Abstract: 2N3055 RCA . 66 applies to BF257, BF258, BF259 only. Max. ratings Characteristics m 25°C Code VcBO (V) Vceo (V , 160 160 100 25 30 50 100 1 30/6 31267X BF258 250 250 100 25 30 50 200 1 30/6 31268H BF259 300 300 , BF257 1 160 160 0.1 25 30 31519B 66 BF258 1 250 250 0.1 25 30 31520E 66 BF259 1 300 300 0.1 25 30
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OCR Scan
2N3055 RCA transistor 2N 3440 300V transistor pnp 2a 40321 2n3055 RCA data 40327 2N6079 2N5840 2N6175 2N3440 BUX67 2N3583
Showing first 20 results.