BF2040R EHA07461 - Datasheet Archive

Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled Operating voltage 5V input stages up to 1GHz Drain AGC HF

BF2040R BF2040R Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled Operating voltage 5V input stages up to 1GHz Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model Type Marking BF2040R BF2040R NCs Pin Configuration 1=D 2=S 3 = G1 Package 4 = G2 SOT143R Maximum Ratings Parameter Symbol Drain-source voltage VDS 8 V Continuos drain current ID 20 mA Gate 1/gate 2 peak source current ±IG1/2SM 10 Gate 1 (external biasing) +VG1SE 7 Total power dissipation, TS = 76 °C Ptot 200 Storage temperature Tstg -55 . 150 Channel temperature Tch 150 Value Unit V mW °C Thermal Resistance Rthchs Channel - soldering point1) 370 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Oct-05-2001 BF2040R BF2040R Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)DS 10 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 nA +IG2SS - - 50 nA IDSS - - 50 µA IDSX - 15 - mA VG2S(p) 0.3 0.7 - V VG1S(p) 0.3 0.6 - DC characteristics Drain-source breakdown voltage V ID = 20 µA, VG1S = 0 V, VG2S = 0 V Gate 1 - source breakdown voltage +IG1S = 10 mA, VG2S = 0 V, VDS = 0 V Gate 2 - source breakdown voltage +IG2S = 10 mA, VG1S = 0 V, VDS = 0 V Gate 1 source leakage current VG1S = 5 V, VG2S = 0 V, VDS = 0 V Gate 2 source leakage current VG2S = 5 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 k Gate 2-source pinch-off voltage VDS = 5 V, ID = 20 µA Gate 1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA 2 Oct-05-2001 BF2040R BF2040R Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. gfs - 42 - mS Cg1ss - 2.9 - pF Cdss - 1.6 - Gps 20 23 - - 1.6 2.2 45 50 - AC characteristics Forward transconductance VDS = 5 V, ID = 15 mA, VG2S = 4 V Gate 1 input capacitance VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 1 MHz Power gain dB VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 800 MHz Noise figure F VDS = 5 V, ID = 15 mA, VG2S = 4 V, f = 800 MHz Gain control range VDS = 5 V, VG2S = 4 . 0V, f = 800 MHz 3 Gps Oct-05-2001 BF2040R BF2040R Total power dissipation Ptot = f (TS ) Drain current ID = f (IG1) VG2S = 4 V 28 mA 300 mW 24 22 ID P tot 20 200 18 16 14 150 12 10 100 8 6 50 4 2 0 0 20 40 60 80 100 120 °C 0 0 150 10 20 30 40 50 60 70 µA 90 IG1 TS Output characteristics ID = f (VDS ) Gate 1 current IG1 = f (VG1S) VG2S = 4 V VDS = 5 V VG1S = Parameter VG2S = Parameter 26 mA 195 µA 22 165 4V 1.4V 20 150 16 14 3.5V 135 1.3V IG1 ID 18 120 105 1.2V 12 3V 90 10 75 1.1V 8 2.5V 60 1V 6 45 4 2 2V 30 15 0 0 1 2 3 4 5 6 7 8 V 0 0 10 VDS 0.4 0.8 1.2 1.6 2 2.4 V 3.2 VG1S 4 Oct-05-2001 BF2040R BF2040R Gate 1 forward transconductance Drain current ID = f (VG1S) gfs = f (ID) VDS = 5 V VDS = 5 V, VG2S = Parameter VG2S = Parameter 45 28 mA 4V mS 4V 35 3V 24 22 3.5V 3V ID gfs 20 30 18 16 25 2V 2.5V 20 14 2V 12 10 15 8 10 1.5V 6 4 5 2 0 0 4 8 12 16 20 24 28 32 mA 0 0 40 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ID V 2 VG1S Drain current ID = f (VGG ) Drain current ID = f (VGG) VDS = 5 V, VG2S = 4 V, RG1 = 100 k VG2S = 4 V (connected to VGG, VGG=gate1 supply voltage ) RG1 = Parameter in k 14 28 mA 80 mA 24 22 10 100 ID ID 20 8 120 18 16 140 14 6 160 12 10 4 8 6 2 4 2 0 0 1 2 3 V 0 0 5 VGG 1 2 3 4 5 6 7 V 9 VGG =VDS 5 Oct-05-2001