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BF199 RF

Catalog Datasheet MFG & Type PDF Document Tags

BF199

Abstract: BF199 RF MOTOROLA Order this document by BF199/D SEMICONDUCTOR TECHNICAL DATA RF Transistor NPN Silicon BF199 COLLECTOR 1 3 BASE 2 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value , BF199 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic , , FETs and Diodes Device Data 1000 700 500 10 BF199 VCE = 10 V TA = 25°C 300 C, CAPACITANCE (pF) f T, CURRENT­GAIN - BANDWIDTH PRODUCT (MHz) BF199 200 100 2 Cib 1 0.7 0.5
Motorola
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BF199 RF transistor NPN BF199 bf199 motorola BF199 transistor BF199/D 226AA

BF199 RF

Abstract: BF199 BF199 NPN Silicon Epitaxial Planar Transistor designed for RF applications; low feedback capacitance, especially suited for emitter-grounded IF stages in TV sets. 3-(A)-C S ir max. Q5 * 1,25 , distance of 2 mm from case 88 BF199 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit DC , 0.5 1V - vbb 89 BF199 Common emitter collector characteristics Collector current versus base , BF199 Forward transconductance versus emitter current mS 200 BF 199 A 100 10 V ! - v; mht
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transistor BF 199 Bf 199 BF 199 transistor transistor BF199

bf199 equivalent

Abstract: bF199 transistor BF199 NPN Silicon Transistor Feature: · NPN Silicon Planar Epitaxial RF Transistor. TO , : 1. Base 2. Emitter 3. Collector Page 1 13/05/08 V1.1 BF199 NPN Silicon Transistor , .1 BF199 NPN Silicon Transistor Specifications IC Maximum (A) VCEO Maximum (V) VCBO Maximum , Part Number 0.025 25 40 0.5 550 38 TO-92 BF199 Page 3 13/05/08 V1.1 BF199 NPN Silicon Transistor Notes: International Sales Offices: AUSTRALIA ­ Farnell FINLAND ­
Multicomp
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bf199 equivalent F 9016 transistor transistor 9016 npn 03 transistor data bf199 ic 9400

bf199 equivalent

Abstract: BF199 BF199 NPN Silicon Transistor Features: · NPN Silicon Planar Epitaxial RF Transistor. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 , : 1. Base 2. Emitter 3. Collector Page 1 31/05/05 V1.0 BF199 NPN Silicon Transistor , V Dynamic Characteristics Transition Frequency Page 2 dB 31/05/05 V1.0 BF199 NPN , Number 0.025 25 40 0.5 550 38 TO-92 BF199 Page 3 31/05/05 V1.0 BF199
Multicomp
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bf199

Abstract: data bf199 MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF T ransistor NPN Silicon COLLECTOR 1 2 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage C ollector-B ase Voltage E m itte r-B a se Voltage , Small-Signal Transistors, FETs and Diodes Device Data 2-231 BF199 ELECTRICAL CHARACTERISTICS O a = 25 , Transistors, FETs and Diodes Device Data BF199 BANDWIDTH PRODUCT (MHz) lT, CURRENT-GAIN- 0.1 0.2 , Device Data 2-233 BF199 mmhos le, COLLECTOR CURRENT (mA) Figure 7. g11e(gie) Figure B
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BF199 parameters

Abstract: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR RF EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package E BC ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless otherwise specified) DESCRIPTION SYMBOL Value , Page 1 of 3 BF199 TO-92 Plastic Package TO-92 Plastic Package TO-92 Transistors on Tape and Ammo , kgs Continental Device India Limited Data Sheet Page 2 of 3 Notes BF199 TO-92 Plastic
Continental Device India
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BF199 parameters 100MH C-120 BF199R 110302D
Abstract: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE , Page 1 of 4 BF199 TO-92 Plastic Package TO-92 Plastic Package MIN. MAX. 5.33 4.32 5.20 , BF199 TO-92 Plastic Package TO-92 Tape and Ammo Pack Tape Mechanical Data (p) P h1 T , BF199 TO-92 Plastic Package Disclaimer The product information and the selection guides facilitate Continental Device India
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240403E

BF199

Abstract: bF199 transistor Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO , Data Sheet Page 1 of 4 BF199 TO-92 Plastic Package TO-92 Plastic Package A , _1 240403E Continental Device India Limited Data Sheet Page 2 of 4 BF199 TO-92 Plastic Package , Continental Device India Limited Data Sheet Page 3 of 4 Notes BF199 TO-92 Plastic Package
Continental Device India
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s parameters RF NPN POWER TRANSISTOR 100MHz

BF199

Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO , Sheet Page 1 of 4 BF199 TO-92 Plastic Package TO-92 Plastic Package A Uncontrolled , Continental Device India Limited Data Sheet Page 2 of 4 BF199 TO-92 Plastic Package TO-92 Tape , Limited Data Sheet Page 3 of 4 Notes BF199 TO-92 Plastic Package Disclaimer The product
Continental Device India
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transistor Common Base configuration india 310303E

BF199

Abstract: MW front END Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BF199 TO-92 Plastic Package C EB RF Transistor ABSOLUTE , 1 of 4 BF199 TO-92 Plastic Package TO-92 Plastic Package A Uncontrolled DIM MIN , Continental Device India Limited Data Sheet Page 2 of 4 BF199 TO-92 Plastic Package TO-92 Tape , Limited Data Sheet Page 3 of 4 Notes BF199 TO-92 Plastic Package Disclaimer The product
Continental Device India
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MW front END c 2579 transistor

BF199

Abstract: BF199 FAIRCHILD SEMICONDUCTOR BF199 BF199 NPN RF Transistor TO-92 1 1. Collector 2. Emitter 3. Base Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 25 VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 4.0 V IC Collector Current 50 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 , Corporation Rev. A, September 2002 BF199 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58
Fairchild Semiconductor
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BF199 FAIRCHILD SEMICONDUCTOR BF199 fairchild

PN3563

Abstract: 2N5179 TO-92 RF Amplifiers bfif: T> m t.SD113D D03^SEfi ISA «NSCS NATL SEniCON]) ( DISCRETE ) Devices VCE0{Sint) (Volts) Min «e (mA) Max h FE ® 'c Vâ'¬E «T (MHZ) Min .ç* PF Max NF (dB) @ f Package NPN PNP Min mA V Max MHz 2N3663 12 50 20 8.0 10 700 1.70 6.5 60 T0-92(94) 2N5179 12 50 25 3.0 1.0 900 1.0 4.5 200 TO-72 MMBT5179 12 50 25 3.0 1.0 900 1.0 4.5 200 TO-236* MPS5179 12 50 25 3.0 , 600 1.7 6.0 60 T0-92(92) BF199 25 100 40 7.0 10 750 Typ. 0.35 Typ. 2.5 .Typ. 35 T0-92(98) MMBTH10
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2N5770 2N918 MMBT918 PN918 MPSH24 PN3563 2N5179 TO-92 MPSH10 MMBTH11

sx3704

Abstract: BRC157 . OP . RF . , G . Base W TVT5 RF Germanium AF239 . Base R RF Germanium AF139 BF197 . Base G TVT6 TVT2 RF S ilicon NPN 17 Large Signal IF Silicon NPN , RF Germanium RF S ilicon NPN BF200 AF139 Large Signal IF S ilicon NPN BF197 . Base G TVT6 TVT2 RF10 17 TVT5 RF Germanium . Base R . Base R Video
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sx3704 BRC157 Germanium Diode aa143 BRC-116 1n4148 ITT TRANSISTOR BC147 VT701 R2540 VT702 1N4005 BZX83-C30 BZX79-C30

BF199 RF

Abstract: bF199 transistor RftJA 357 °C/W Thermal Resistance, Junction to Case Rfljc 125 "CAN BF199 CASE 29-04, STYLE 21 TO-92 (TO-226AA) 1 Collector 2 Emitter RF TRANSISTOR NPN SILICON Refer to BF240 for graphs. ELECTRICAL
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TO226AA

n3904

Abstract: BF509 SMALL-SIGNAL TRANSISTORS â'" PLASTIC (continued) RF Transistors The RF transistors are designed for Small Signal amplification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges. Several types are AGC characterised. The transistors are listed in order of decreasing Fy Min. bvceo Pd 'c cre Device Pin min. max. max. hfe , 625 50 20 8 10 800 1.7 6* 60 m ps3563 ebc 12 625' 50 20 8 10 800 1.7 6* 60 bf199 ceb 25 625 100 40 7
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n3904 BF509 CEB npn BF255 BF240 CEB pnp BF959

BCX29

Abstract: BF199 RF MPS2907 40 625 600 75 - MPS2222 30 625 600 75 RF TRANSISTORS (TO-92) The RF Transistors are designed for Small-Signal amplification from RF to VHF/UHF frequencies. They are also used as mixers and , 625 100 70 BEC 25 625 100 35 EBC 25 625 50 20 AM/FM > NPN PNP BF240 BF198* BF199 BF254
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BCX25 BCX26 BCX27 BCX28 BCX29 BCX30 BF368 BF906

BFT98

Abstract: BF255 RF Bipolar Transistors For complete package outlines, refer to pages PO-1 through PO-6 RF Bipolar Transistors I Type M axim um R atings C haracteristics (T& =25°C) Case Lead N=NPN P=PNP V BF199 BF240 BF241 BF254 BF255 BF414 BF450 BF451 BF506 BF606A BF763 BF959 BF970 BFQ69 BFQ70 BFQ71 BFQ72 BFQ73S BFQ74 BFQ75 BFQ76 BFQ82 BFR90 BFR91A BFR96S BFS55A BFT66 BFT98 BFT98B BFT99 BFW92 BFX59 BFX59F BFY90 N N N N N P P P P P N N P N N N N N N P P N N N N N N N N N N N N N 25 40 40 20 20 30 40 40 35 30 15 20
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transistors bfs17p BF599 BF840 BF841 BF554 BF550 BF660

F240 transistor

Abstract: Transistor F240 BF199 M A X IM U M RATINGS Rating C o lle cto r-E m itte r Voltage C ollector-B ase Voltage E m itter-Base Voltage C ollector C urrent - C ontinuous Total Device D issipation (S > T a = 25°C Derate above 25°C Total Device D issipation (a>Tc = 25°C Derate above 25°C O perating and Storage Ju nctio n Tem perature Range Sym bol VCEO VCBO VEBO Value 25 40 4.0 100 350 2.8 1.0 8.0 - 55 to + 1 5 0 U nit Vdc Vdc Vdc , Resistance, Junction to Case Symbol r »j a Max 357 125 Unit °C-W °C/W RF TRANSISTOR NPN SILICON
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F240 transistor Transistor F240
Abstract: BF 199 NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR MICRO EL.ECTRDNICS CASE T0-92E BF199 is an NPN s ilic o n p la n a r e p ita x ia l tr a n s is to r designed f o r RF a m p lifie rs and video IF a m p lifie rs in common e m itte r c o n fig u ra tio n . CBE ABSOLUTE MAXIMUM RATINGS C o llecto r-B ase V oltage C o lle c to r-E m itte r V oltage E m itter-B ase V oltage C o lle c to r C urrent Base C urrent T o tal Power D iss ip a tio n TA^45°C O perating Ju n c tio n & S torage Tem -
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TELEX-43510

BF199 RF

Abstract: BF199 BF 199 NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR [VIIGF*CU EL.ECTRDNICS BF199 is an NPN silicon planar epitaxial transistor designed for RF amplifiers and video IF amplifiers in common emitter configuration. case t0-92e ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA^45°C Operating Junction & Storage Temperature EEECTEECAL CHARACTERISTICS (TA=25°C) vcbo vceo vebo ic ib Ptot Tj, Tstg 40V 25V 4V
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HF transistor 10JIA
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