BF1201WR |
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NXP Semiconductors
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BF1201WR - N-channel dual-gate PoLo MOS-FETs - CIS TYP: 2.6 pF; COS: 0.9 pF; ID: 30 mA; IDSS: 11 to 19 mA; Noise figure: 1.9@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 10 V; YFS min.: 23 mS |
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Original |
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BF1201WR |
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Philips Semiconductors
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N-Channel Dual-Gate PoLo MOS-FET |
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Original |
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BF1201WR,115 |
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NXP Semiconductors
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BF1201 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal |
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Original |
PDF
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BF1201WR,115 |
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NXP Semiconductors
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N-channel dual-gate PoLo MOS-FETs - CIS TYP: 2.6 pF; COS: 0.9 pF; ID: 30 mA; IDSS: 11 to 19 mA; Noise figure: 1.9@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 10 V; YFS min.: 23 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
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Original |
PDF
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BF1201WR,135 |
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NXP Semiconductors
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BF1201WR - N-channel dual-gate PoLo MOS-FETs, SOT343R Package, Standard Marking, Reel Pack, SMD, Large |
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Original |
PDF
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BF1201WR,135 |
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NXP Semiconductors
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N-channel dual-gate PoLo MOS-FETs - CIS TYP: 2.6 pF; COS: 0.9 pF; ID: 30 mA; IDSS: 11 to 19 mA; Noise figure: 1.9@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 10 V; YFS min.: 23 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
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Original |
PDF
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BF1201WRT/R |
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NXP Semiconductors
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N-channel dual-gate PoLo MOS-FETs - CIS TYP: 2.6 pF; COS: 0.9 pF; ID: 30 mA; IDSS: 11 to 19 mA; Noise figure: 1.9@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 10 V; YFS min.: 23 mS |
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Original |
PDF
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BF1201WRTR |
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Philips Semiconductors
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N-channel dual-gate PoLo MOS-FET |
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Original |
PDF
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