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BF1005 Datasheet

Part Manufacturer Description PDF Type
BF-1005 Essentra Components Catalog Bumpers, Feet, Pads, Grips, Hardware, Fasteners, Accessories, BUMPERS/FEET BLACK 1.10"CUSH DIA Original
BF1005 Infineon Technologies Single Full Biased; Package: PG-SOT143-4; I<sub>D</sub> (max): 25.0 mA; P<sub>tot</sub> (max): 200.0 mW; g<sub>fs</sub> (typ): 24.0 mS; G<sub>p</sub> (typ): 19.0 dB; F (typ): 1.6 dB; Original
BF1005 Infineon Technologies Silicon N-Channel MOSFET Tetrode Original
BF1005 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BF1005 Siemens Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Original
BF1005 Temex Standard coaxial devices 1 to 18 GHz Original
BF1005 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BF1005 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BF1005E6327 Infineon Technologies RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 25MA SOT-143 Original
BF1005R Infineon Technologies Single Full Biased; Package: PG-SOT143-4; I<sub>D</sub> (max): 25.0 mA; P<sub>tot</sub> (max): 200.0 mW; g<sub>fs</sub> (typ): 24.0 mS; G<sub>p</sub> (typ): 19.0 dB; F (typ): 1.6 dB; Original
BF1005R Infineon Technologies Silicon N-Channel MOSFET Tetrode Original
BF1005R Infineon Technologies Dual-MOS FET Monolithic Integrated Circuit Original
BF1005S Infineon Technologies TRANS MOSFET N-CH 8V 0.025A 4SOT143 Original
BF1005S Infineon Technologies Silicon N-Channel MOSFET Tetrode Original
BF1005S Infineon Technologies Single Full Biased; Package: PG-SOT143-4; I<sub>D</sub> (max): 25.0 mA; P<sub>tot</sub> (max): 200.0 mW; g<sub>fs</sub> (typ): 30.0 mS; G<sub>p</sub> (typ): 22.0 dB; F (typ): 1.6 dB; Original
BF1005S Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original
BF1005S Siemens Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Original
BF1-005-S500-11 E-tec Interconnect Connector: Wire to Board Connector: F: 5: 2.54: THRU Original
BF1005SE6327 Infineon Technologies RF FETs, Discrete Semiconductor Products, MOSFET N-CH 8V 25MA SOT-143 Original
BF1005SE6327 Infineon Technologies FET Transistor, Enhancement, N Channel, ID 0.025A, Tape And Reel Original
Showing first 20 results.

BF1005

Catalog Datasheet MFG & Type PDF Document Tags

BF1005

Abstract: 2007-04-20 BF1005. Total power dissipation Ptot = Æ'(TS) BF1005, BF1005R Total power dissipation , BF1005. Silicon N-Channel MOSFET Tetrode â'¢ For low noise, high gain controlled input stages , BF1005 SOT143 1=S 2=D 3=G2 4=G1 - - MZs BF1005R SOT143R 1=D 2=S 3 , BF1005. Thermal Resistance Parameter Symbol Value Unit Channel - soldering point 1 , calculation of R thJA please refer to Application Note Thermal Resistance 2 2007-04-20 BF1005.
Infineon Technologies
Original
Abstract: Package Pin Configuration Marking BF1005 BF1005R BF1005W* * on request only SOT143 SOT143R SOT343 , (external biasing) Total power dissipation TS 76 °C, BF1005, BF1005R TS 94 °C, BF1005W Storage temperature , power dissipation Ptot = (TS) BF1005, BF1005R Total power dissipation Ptot = (TS) BF1005W 220 mW , BF1005. Silicon N-Channel MOSFET Tetrode · For low noise, high gain controlled input stages up , . 1 Sep-29-2004 BF1005. Thermal Resistance Parameter Channel - soldering point 1) BF1005 Infineon Technologies
Original
EHA07215
Abstract: 8 Unit V mA V mW TS ≤ 76 °C, BF1005, BF1005R 200 TS ≤ 94 °C, BF1005W 200 , '(TS) BF1005, BF1005R Total power dissipation Ptot = Æ'(TS) BF1005W 220 220 mW mA , BF1005. Silicon N-Channel MOSFET Tetrode â'¢ For low noise, high gain controlled input stages , =G1 - - MZs BF1005R SOT143R 1=D 2=S 3=G1 4=G2 - - MZs BF1005W , recommended to apply external DC-voltage on Gate 1 in active mode. 1 2005-11-03 BF1005. Thermal Infineon Technologies
Original
Abstract: BF1005. Total power dissipation Ptot = (TS) BF1005, BF1005R Total power dissipation Ptot = (TS , BF1005. Silicon N-Channel MOSFET Tetrode · For low noise, high gain controlled input stages up , BF1005 BF1005R Parameter Package SOT143 SOT143R 1=S 1=D 2=D 2=S Pin Configuration 3=G2 3=G1 4=G1 4 , calculation of R thJA please refer to Application Note Thermal Resistance 1 2006-08-31 BF1005. , 2006-08-31 BF1005. Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Infineon Technologies
Original

BF1005

Abstract: BF1005R (TS) BF1005, BF1005R Total power dissipation Ptot = (TS) BF1005W 220 220 mW mA 160 , BF1005. Silicon N-Channel MOSFET Tetrode · For low noise, high gain controlled input stages up , Marking BF1005 SOT143 1=S 2=D 3=G2 4=G1 - - MZs BF1005R SOT143R 1 , to apply external DC-voltage on Gate 1 in active mode. 1 2007-04-20 BF1005. Thermal , Application Note Thermal Resistance 2 2007-04-20 BF1005. Electrical Characteristics at TA = 25
Infineon Technologies
Original
BFP181 BFP181R

BF1005

Abstract: Package Pin Configuration Marking BF1005 BF1005R BF1005W* * on request only SOT143 SOT143R SOT343 , (external biasing) Total power dissipation TS 76 °C, BF1005, BF1005R TS 94 °C, BF1005W Storage temperature , power dissipation Ptot = (TS) BF1005, BF1005R Total power dissipation Ptot = (TS) BF1005W 220 mW , BF1005. Silicon N-Channel MOSFET Tetrode · For low noise, high gain controlled input stages up , . 1 Sep-29-2004 BF1005. Thermal Resistance Parameter Channel - soldering point 1) BF1005
Infineon Technologies
Original

BF1005

Abstract: BF1005R 8 Unit V mA V mW TS 76 °C, BF1005, BF1005R 200 TS 94 °C, BF1005W 200 Storage , = 800 GHz 3 Feb-18-2004 BF1005. Total power dissipation Ptot = (TS) BF1005, BF1005R , BF1005. Silicon N-Channel MOSFET Tetrode · For low noise, high gain controlled input stages up , =G1 - - MZs BF1005R SOT143R 1=D 2=S 3=G1 4=G2 - - MZs BF1005W , to apply external DC-voltage on Gate 1 in active mode. 1 Feb-18-2004 BF1005. Thermal
Infineon Technologies
Original
200MH

BF1005

Abstract: Package Pin Configuration Marking BF1005 BF1005R BF1005W* * on request only SOT143 SOT143R SOT343 , (external biasing) Total power dissipation TS 76 °C, BF1005, BF1005R TS 94 °C, BF1005W Storage temperature , power dissipation Ptot = (TS) BF1005, BF1005R Total power dissipation Ptot = (TS) BF1005W 220 mW , BF1005. Silicon N-Channel MOSFET Tetrode · For low noise, high gain controlled input stages up , . 1 Sep-29-2004 BF1005. Thermal Resistance Parameter Channel - soldering point 1) BF1005
Infineon Technologies
Original

BF1005

Abstract: VPS05178 BF1005 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up , discharge sensitive device, observe handling precaution! Type Marking BF1005 MZs Pin , -28-2001 BF1005 Electrical Characteristics at T A = 25°C, unless otherwise specified. Symbol Values , -28-2001 BF1005 Total power dissipation Ptot = f (TS ) Drain current ID = f (VG2S) 300 12 mA mW , Jun-28-2001 BF1005 f = 200MHz f = 200MHz 3.0 pF 3.0 pF 2.4 2.4 2.2 2.2
Infineon Technologies
Original
VPS05178
Abstract: power dissipation P to i= f(T S) DCHDD55 7b4 â  BF1005 Drain current /D = f (tfegs) 300 , Gate 1 input capacitance Cgi ss = f (V^s) f=1 MHz DDTQDSb bTO â  BF1005 Output capacitance -
OCR Scan
Q62702-F1498 800MH

SMD Schottky Barrier Diode 0603

Abstract: schottky diode B5 Package type BD-0603 BF-1005 This datasheet contains new product information. Anachip Corp. reserves
Anachip
Original
ASB0230 SMD Schottky Barrier Diode 0603 schottky diode B5 smd marking BD Diode smd marking b5 MIL-STD-750

smd bf

Abstract: BD-0603 (approximately) Ordering information A XX XXX XX XX Feature lo Vo Package type BD-0603 BF-1005
Anachip
Original
ASB00340 smd bf smd marking sb diode schottky 40v 30ma

smd diode bd

Abstract: 43 SMD : ASB42 43: ASB43 Package type BD-0603 BF-1005 This datasheet contains new product information
Anachip
Original
smd diode bd 43 SMD 30V 200mA schottky barrier diode Diode smd BD smd marking BD diode ASB42/43

SMD B7 diode

Abstract: smd diode b7 Vo Package type BD-0603 BF-1005 SB : Schottky Barrier This datasheet contains new product
Anachip
Original
ASB0240 SMD B7 diode smd diode b7

schottky barrier diode 40v 40mA

Abstract: ASB40 Package type BD-0603 BF-1005 This datasheet contains new product information. Anachip Corp. reserves
Anachip
Original
ASB40 schottky barrier diode 40v 40mA

smd diode S4

Abstract: ASS355 SS : Small Singal XX 355 XX Package type PN BD-0603 BF-1005 This datasheet
Anachip
Original
ASS355 smd diode S4

diode schottky 40v 30ma

Abstract: Vo Package type BD-0603 BF-1005 This datasheet contains new product information. Anachip Corp
Anachip
Original

smd diode B3

Abstract: b3 smd diode lo XX XX XX Vo Package type BD-0603 BF-1005 This datasheet contains new product
Anachip
Original
smd diode B3 b3 smd diode b3 smd transistor SMD transistor b3 ASB0130

smd diode B3

Abstract: b3 smd diode Package type BD-0603 BF-1005 This datasheet contains new product information. Anachip Corp. reserves
Anachip
Original
smd b3 smd diode marking B3
Abstract: FILE # BF-1005 MATâ'™L: SEE NOTES RE: SEE ECN #1125 FOR CHANGES ENGR DATE DWG IN E3 IN -
OCR Scan
S-240 RMS-114

Q62702-F1498

Abstract: BF1005 Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled input stages up , discharge sensitive device, observe handling precaution! Type Marking BF1005 MZs Pin , -28-2001 BF1005 Electrical Characteristics at T A = 25°C, unless otherwise specified. Symbol Values , -28-2001 BF1005 Total power dissipation Ptot = f (TS ) Drain current ID = f (VG2S) 300 12 mA mW , Jun-28-2001 BF1005 f = 200MHz f = 200MHz 3.0 pF 3.0 pF 2.4 2.4 2.2 2.2
Siemens
Original
Abstract: power dissipation P to i= f(T S) DCHDD55 7b4 â  BF1005 Drain current /D = f (tfegs) 300 , Gate 1 input capacitance Cgi ss = f (V^s) f=1 MHz DDTQDSb bTO â  BF1005 Output capacitance -
OCR Scan

marking code g1s

Abstract: Q62702-F1498 FILE # BF-1005 MATâ'™L: SEE NOTES RE: SEE ECN #1125 FOR CHANGES ENGR DATE DWG IN E3 IN
Siemens
Original
marking code g1s
Showing first 20 results.