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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

BF 199 transistor

Catalog Datasheet MFG & Type PDF Document Tags

bf199 equivalent

Abstract: SMPS CIRCUIT DIAGRAM and working to produce the necessary output voltage. Figure 8 is the block diagram. The BF 199 transistor is used as common-emitter amplifier. The base-emitter diode of another transistor provides temperature , are used. The cascade circuit uses one BC238-C and one BF 199 transistor. The operating point of the BF I99 transistor is set by a voltage divider supplied from the 2.5-V source. The base-emitter , diode current IF and the detector transistor current IC. From the frequency response characteristic it
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bf199 equivalent SMPS CIRCUIT DIAGRAM and working CNY 42 optocoupler 3 phase smps circuit diagram BF 199 transistor BC238C equivalent

BF199

Abstract: transistor BF 199 Preferred device Dispositif recommandé The BF 199 is intended for use in television video intermediate frequency amplifier, in particular for the output stage. vCEO 25 V Le BF 199 est destiné aux étages à , M. mwm 75 - 46 1/5 539 BF 199 STATIC CHARACTERISTICS T . -?5°C (Unless otherwise stated , Capacité de réaction VCE= 10 V Iq = 1 mA f = 10,7 MHz _C12e 0,32 pF 2/5 540 BF 199 DYNAMIC , (jonction-ambiante) Junction-ambient thermal resistance Rth(j-a) 330 °c/w BF 199 STATIC CHARACTERISTICS
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BF199 transistor BF 199 BF 199 transistor NPN BF199 bf199 transistor transistor BF199 CB-76 21E10

transistor BF 199

Abstract: bf199 SIEM ENS BF 199 NPN Silicon RF Transistor â'¢ For common emitter IF TV amplifier stages â'¢ Low feedback capacitance due to shield diffusion Type Marking BF 199 - Pin , Outlines. 334 â  Ã»23SbDS U0bb745 BF 199 Electrical Characteristics at 7a = 25 "C, unless , Aktiengesellschaft 335 - - - - - - BF 199 Collector-emltter breakdown voltage Total , Siemens Aktiengesellschaft I ô23SbGS DDbb747 703 / ( / b) BF 199 Output characteristics
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transistor A11A Q62702-F355

BF199

Abstract: TFK U 217 B A BF 199 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Emitterschaltung. Besonders in Video-ZF-Endstufen , V V mA mA mW °C °C B 2/V. 2. 505/0875 A 1 215 BF 199 Wärmewiderstand Min. Typ. Max , BF 199 218 , Feedback capacitance UCB = 10 V, /c = 1 mA, / = 0,47 MHz CUre 0,32 pF ') -f- = 0,01, ip = 0,3 ms 216 BF
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TFK U 217 B TFK 505 f 199 transistor lamb TFK 001 TFK 505 am

BEL 100N TRANSISTOR

Abstract: bel 187 transistor '" NPN HIGH FREQUENCY TRANSISTORS 94. 95. 96 BF 198 BF 199 BF 959 30 25 20 40 40 30 4 27min. 4 10 , Package PNP OUTPUT TRANSISTOR 79 BC 369 20 25 5 85/375 500 1 2000 1000 .1 .5 60 â'" â'" â'" TO 237 NPN LOW VOLTAGE OUTPUT TRANSISTOR 80 BEL 187 15 25 5 100/300 300 1 1000 600 .1 5 250 â'" â'" â'" TO 92 PNP LOW VOLTAGE OUTPUT TRANSISTOR 81 BEL 188 15 25 5 100/300 300 1 1000 600 .1 .5 250 â'" â'" â'" TO 92 NPN AUDIO OUTPUT TRANSISTOR 82 BEL 100N 50 60 6 50/280 150 1
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BEL 100N TRANSISTOR bel 187 transistor PN3904 bel 188 transistor bel 187 transistor npn bel 187

bel 187 transistor

Abstract: bel187 TRANSISTORS 94. BF 198 30 40 4 27min. 4 10 25 500 â'" â'" 400 â'" â'" â'" TO 92 95. BF 199 25 40 4 37min. 7 , PNP OUTPUT TRANSISTOR 79 BC 369 20 25 5 85/375 500 1 2000 1000 .1 .5 60 â'" â'" â'" TO 237 NPN LOW VOLTAGE OUTPUT TRANSISTOR 80 BEL 187 15 25 5 100/300 300 1 1000 600 .1 5 250 â'" â'" â'" TO 92 PNP LOW VOLTAGE OUTPUT TRANSISTOR 81 BEL 188 15 25 5 100/300 300 1 1000 600 .1 .5 250 â'" â'" â'" TO 92 NPN AUDIO OUTPUT TRANSISTOR 82 BEL 100N 50 60 6 50/280 150 1 1000 1000 .1 .5 130 â'" â
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bel187 BEL188 bel 187 NPN TRANSISTOR transistor bel 187 BEL100N BEL 100p transistor

BEL 100N TRANSISTOR

Abstract: bel 187 transistor '" NPN HIGH FREQUENCY TRANSISTORS 94. 95. 96 BF 198 BF 199 BF 959 30 25 20 40 40 30 4 27min. 4 10 , Package PNP OUTPUT TRANSISTOR 79 BC 369 20 25 5 85/375 500 1 2000 1000 .1 .5 60 â'" â'" â'" TO 237 NPN LOW VOLTAGE OUTPUT TRANSISTOR 80 BEL 187 15 25 5 100/300 300 1 1000 600 .1 5 250 â'" â'" â'" TO 92 PNP LOW VOLTAGE OUTPUT TRANSISTOR 81 BEL 188 15 25 5 100/300 300 1 1000 600 .1 .5 250 â'" â'" â'" TO 92 NPN AUDIO OUTPUT TRANSISTOR 82 BEL 100N 50 60 6 50/280 150 1
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transistor bf 198 bel 100n transistor npn bel 188 transistor pnp transistor BEL 100P BEL 100N transistor 2222a to-92

BF199 RF

Abstract: BF199 ambient temperature at a distance of 2 mm from case mW BF 199 500 , iboa 0.3 0.2 0.1 BF 199 I 1 l££ = 10V r , BF199 Forward transconductance versus emitter current mS 200 BF 199 A 100 10 V ! - v; mht , BF199 NPN Silicon Epitaxial Planar Transistor designed for RF applications; low feedback capacitance, especially suited for emitter-grounded IF stages in TV sets. 3-(A)-C S ir max. Q5 * 1,25
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BF199 RF

BFW 10 fet

Abstract: transistor bf 494 220 1 10 â'" â'" 260+ 0.9 â'¢ 4 BF 185 N TO-72J 165 30 20 36 125 1 10 â'" â'" 200+ 0.9* 4 BF 199 N , max (V) â'¢c (mA) BF 115 N TO-72J 165 30 30 48 167 1 10 _ 230+ 0.8* 3.5+ BF 162 N TO-106 200 â'" 12 20 â'" 3 10 0.5 10 600 1.2 â'" BF 153 N TO-106 200 â'" 12 20 â'" 3 6 0.5 10 300 1.2 â'" BF 155 N TO-72G 200 20 40 20 â'" 2.5 12 0.3 10 400 0.4+â'¢ 9 BF 158 N TO-106 200 50 12 20 â'" 4 10 0.5 10 700+ 1.2* 3.5 BF 159 N TO-106 200 50 20 20 _ 4 10 0.5 10 700+ 1.2« 3.5 BF 160 N TO-106 200 50 12 20 â
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BFW 10 fet transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 241 transistor BF 253 MELF-005 MT-12 S40/S-

transistor bf 184

Abstract: pnp vhf transistor m ils Uli S .A . TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958 2N 4959 2N 5109 2N 5109A 2N 5109B g_, 3' 2a ! 2 1 6 , -72a 2.5 2 450 T0-72a TO-18a TO-39 - COMPLEMENTARY TRANSISTOR PAIRS T YPE PNP NPN BC 337 BC 327
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transistor bf 184 pnp vhf transistor TO50 transistor BF 184 transistor transistor BF 509 BF 914 transistor T0-72 T0-92 T0-39

transistor BUX 83

Abstract: bux c reverse ta ping; BF 569 R-GS 07. In case of reverse taping, the transistor orientation on the tape is , Storege time M S MS 2720 E- 13 199 TELEFUNKEN ELECTRONIC 1?E D ÖSBÜDRb , transistor on tepe1 1 Additional marking for specials5 1 *i 06 *View on flat side of transistor, view on gummed tape 05 = View on round side of transistor, view on gummed tape s) Additional marking " 0 , orientation of transistor not necessary, because box can be opened on top or botton. Example for order No.: B
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transistor BUX 83 bux c bux 47 MARKING BUX st bux transistor k 2718 T-33-13 15A3DIN

BF516

Abstract: P072A > vf Supersedes issue dated 4/73 199 6/75 BF 516 THERMAL DATA Rth j.amb Thermal resistance , BF 516 SILICON PLANAR PNP UHF-VHF AMPLIFIER The BF516 is a silicon planar epitaxial PNP transistor in a TO-72 metal case, intended as general purpose amplifier up to 1 GHz. ABSOLUTE MAXIMUM RATINGS VcBO Collector-base voltage (1E = 0) -40 V VcEO Collector-emitter voltage (lB = 0) -35 V Vebo , VCB = -12 V Rl = 2 kfi f = 800 MHz lc =-3mA VCB = -12 V Rl = 2 kn f = 200 MHz 11 14 19 dB dB 200 BF
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P072A P072-A

CF-100

Abstract: bss25 as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orientation on the tape , as reverse ta ping: BF 569 R-GS 07. In case of reverse taping, the transistor orientation on the tape , \ 120 °C ^arnb- '' g is 199 3635 ft-04 TELEFUNKEN ELECTRONIC filC D , -92 Transistors Orientation of transistor on ta p e 1 1 Additional marking for specialsa ) ') 06 * View on fiat side of transistor, view on gummed tape 05 « =View on round side of transistor, view on gummed tape
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50B4DIN41867 CF-100 bss25 A08 transistor transistor bf 203 A08 marking 569-GS

Tfk 680

Abstract: TFK 201 V BF 184 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor , mW °C -55. +175 B 2/V.2. 502/0875 A 1 199 BF 184 72800 Tfk , 740 mV UBE ') 1 V Afe 67 115 220 200 BF 184 Dynamische KenngröÃen Min. Typ. Max. AC , fe KurzschluÃ-Ausgangsadmittanz goe 6 ^S Short circuit output admittance ç 145 pp 201 BF 184 , 11 pS Short circuit output admittance c 1 g pp 202 BF 184 72872 Tfk
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Tfk 680 TFK 201 tfk 140 TFK 175 tfk 830 tfk 145

1412D

Abstract: UDN2983A equivalent Tr.Array TD62500 to 599 D-MOS Transistor TD62000 to 199 TD62300 to 499 Bipolar Transistor , TD62318 TD62064 TD62308 TD62164 TD62318 BP,BP-1 BF 80 V VCEF Parasitic Transistor , Output Output Channel 1. TRANSISTOR ARRAY IC 1. TRANSISTOR ARRAY IC 2. BASIC TRANSISTOR AMPLIFIER CIRCUIT 2. BASIC TRANSISTOR AMPLIFIER CIRCUIT COMMON INPUT OUTPUT GND EXAMPLE , RESISTOR) OPERATE DIRECTLY WITH 6V-15V CMOS Cross Reference of Standard Transistor Array Cross
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1412D UDN2983A equivalent 1411d M54522P equivalent DARLINGTON SINK DRIVER TLP251 equivalent ULN2000 TD62M RS232C RS422 IEEE1482 TD62600

BF199 RF

Abstract: BF199 BF 199 NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR [VIIGF*CU EL.ECTRDNICS BF199 is an NPN silicon planar epitaxial transistor designed for RF amplifiers and video IF amplifiers in common emitter configuration. case t0-92e ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA^45°C Operating Junction & Storage Temperature EEECTEECAL CHARACTERISTICS (TA=25°C) vcbo vceo vebo ic ib Ptot Tj, Tstg 40V 25V 4V
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HF transistor 10JIA 100MH TELEX-43510

8ch pnp DARLINGTON TRANSISTOR ARRAY

Abstract: pnp DARLINGTON TRANSISTOR ARRAY -ch High-Current Darlington Driver 199 TB62706BN/BF 16-Bit Shift Register/Latch & Constant Current , S-Driver Series TD62S××× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type (MCT array) Intelligent Driver Series TD62M×××× TD62C××× TB62××× Transistor Array Product Line Characteristics Series Devices S-Driver 9 9 Bipolar Transistor Array 47 228 Special Driver 10
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M54597P PA2981C PA2982C 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p TB62/TD/ULN/ULQ TB62003P/F/FW TB62725AP/AF/ TB62004P/F/FW TB62726AN/AF TB62006P/F/FW
Abstract: Syntax) : Transistor Chip Data IS = 4.8499 fA BF = 84.113 - VAF = 21.742 NE = , SIEMENS BFP 182W NPN Silicon RF Transistor â'¢ For low noise, high-gain broadband , 199 8-1 1 -0 1 525 â  SIEMENS BFP 182W Electrical Characteristics at TA = 25°C, unless , ¡ I S l ' i Q ' ] 199 8-1 1 -0 1 Mbl â  SIEMENS BFP 182W Electrical Characteristics at , ) 199 8-1 1-01 TSb â  SIEMENS Collector-base capacitance Ccb = M^Cb) V'be = Hje = 0, f = 1MHz -
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900MH BFP182W Q62702-F1502 E35LD5
Abstract: BF 199 NPN SILICON PLANAR EPITAXIAL HF TRANSISTOR MICRO EL.ECTRDNICS CASE T0-92E BF199 is an NPN s ilic o n p la n a r e p ita x ia l tr a n s is to r designed f o r RF a m p lifie rs and video IF a m p lifie rs in common e m itte r c o n fig u ra tio n . CBE ABSOLUTE MAXIMUM RATINGS C o llecto r-B ase V oltage C o lle c to r-E m itte r V oltage E m itter-B ase V oltage C o lle c to r C urrent Base C urrent T o tal Power D iss ip a tio n TA^45°C O perating Ju n c tio n & S torage Tem -
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AC125K

Abstract: 6AN7 329 B 339 B 719 BF 61 CV 283 CV 455 CV 491 CV 492 CV 1375 C V 1376 CV 1535 CV 1977 CV 2128 CV 2901 CV
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A741PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 tungsram 72741N 72747N 72748N 7B131N 76149N 1709C
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