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BDY25 Datasheet

Part Manufacturer Description PDF Type
BDY25 Comset Semiconductors NPN SILICON TRANSISTOR, DIFFUSED MESA Original
BDY25 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=140 / Ic=6 / Hfe=15-180 / fT(Hz)=10M / Pwr(W)=87.5 Original
BDY25 Iskra Power Silicon Transistors / Switching Transistors Scan
BDY25 N/A Shortform Transistor PDF Datasheet Scan
BDY25 N/A Cross Reference Datasheet Scan
BDY25 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BDY25 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDY25 N/A Shortform Transistor Datasheet Guide Scan
BDY25 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDY25 Semico High Voltage Video Amplifiers / Television and Video Devices Scan
BDY25 SGS-Thomson Transistor Datasheet Scan
BDY25 Thomson-CSF Condensed Data Book 1977 Scan
BDY25 Thomson-CSF Power Transistor Data Book 1975 Scan
BDY25 Unitra Cemi Transistor - Pol=NPN / Pkg=TO3 / Vceo=140 / Ic=6 / Hfe=15-180 / fT(Hz)=10M / Pwr(W)=87.5 Scan
BDY25A Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original
BDY25A N/A Transistor Replacements Scan
BDY25A N/A Semiconductor Master Cross Reference Guide Scan
BDY25A N/A Shortform Transistor Datasheet Guide Scan
BDY25B Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package Original
BDY25B N/A Transistor Replacements Scan
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BDY25

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large , Temperature TStg Storage Temperature @ TC = 25° Value BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 181T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 COMSET SEMICONDUCTORS Unit 60 90 140 60 100 200 Comset Semiconductors
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181T2 B
Abstract: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large , Temperature TStg Storage Temperature @ TC = 25° Value BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 181T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 BDY23, 180T2 BDY24, 181T2 BDY25, 182T2 COMSET SEMICONDUCTORS Unit 60 90 140 60 100 200 Comset Semiconductors
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Abstract: BDY25 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 140V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 6A 7.92 (0.312) 12.70 (0.50) All Semelab hermetically Semelab
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Abstract: Search Results Part number search for devices beginning "BDY25" Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT BDY25 BDY25A BDY25B BDY25C Polarity NPN NPN NPN NPN Package TO3 TO3 TO3 TO3 VCEO 140V 140V 140V 140V IC(cont) 6A 6A 6A 6A HFE(min) 75 15 30 75 HFE(max) 180 45 90 180 @ VCE/IC 4/2 4/2 4/2 4/2 FT 10MHz 10MHz 10MHz 10MHz PD 85W 85W 85W 85W Searched through 3083 records and found 4 products matching your criteria. Top of Page If you are Semelab
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BDY28B BDY79 BDY54 IC-410 BDY26 BDY26A BDY26B BDY26C BDY28 BDY28A
Abstract: BDY25 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 140V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 6A All Semelab hermetically sealed products can Semelab
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Abstract: ISKRA ELECTRONICS INC 5SE I> â  4003477 0000=114 1 â  T-tt'lS' T-2>3 -/J Silicijevi mocnostni transistorji Power silicon transistors Tip/Type Polariteta Polarity .; MCBO. UcEO UEBO . Ptot â Ã¶bp hpE prl/at lc fr UcEsat SI./ Fig. . -
OCR Scan
BDY74 2N3442 2N4348 2N3055 BDY56 2N3773 ISKRA TIP 2n3055 iskra by 325 BU208A TIP NPN BU134
Abstract: BDY23 BDY23B BDY24 BDY25 BDY26 BBY27 BDY28 BDY29 BDY37 BDY38 BDY39 BDY42 BDY43 BBY44 -
OCR Scan
00GG44T BDX65 BDX65A BDX65B BDX65C BDX66
Abstract: * SEMELAB LT» 37E D â  0133167 QQQQQMà fi iBSMLB T- 3 3'^/ TVPeNo. 5on",y Po,arl* Packa9e V -
OCR Scan
BDY11 BDY12 BDY13 BDY16 BDY20 BDY27 BDY77 BDY61 BDY47 BDY71
Abstract: BDY23B BDY23C BDY24 BDY24B BDY25 BDY25A Page 29 im Semelab NATO LISTED TRANSISTOR PRO D UCT , 5961-999989798 SEMELAB PART NUMBER BDY25B BDY25C BDY26 BDY27B BDY28 BDY28A BDY28C BDY55 BDY56 BDY57 BDY58 BDY58B -
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U3158 BSW68A BUV26 2N3055H 2n2243 transistor transistor BUX22 Transistor BFX79 bu103a 2N1890 2N1893 2N2060 2N2102 2N2102LL
Abstract: NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM, MESA DIFFUSES *BDY23/I80T2 *BDY24 181T2 *BDY25,182T2 - LF large signal power amplification Amplification BF grands signaux de puissance - High current fast switching Commutation rapide fort courant ^ Preferred device Dispositif recommandé vCEO â c ptot (60 V < 90 V ( 140 V 6 A 87,5 W BDY 23 BDY 24 BDY 25 180 T2 181 T2 182T2 Rth(j-c) 2°C/W max (15-45 modèle A h21E(2A) -
OCR Scan
BDY 11 T2140 BDV25 BDV23 p 181 V BDY 24 CB-19
Abstract: ·BDX54E ·BDX54F ·BDX54S ·BDX85 ·BDX86 ·BDX87 ·BDX88 'BDY12B 'BDY23 'BDY24 'BDY25 'BDY73 'BDY74 'BDY76 -
OCR Scan
2N2431 AL102 ATES 2N2222A mps 2N4265 AD149 SFT353 TIS88 RS276-2001 RS276-2002 RS270-2003 RS276-2004 BS276-200S RS276-2008
Abstract: BYS26/40 ') KD135 BD135 KDY25 BDY25 KYS30/30 BYS30/30 ') KD136 BD136 KDY26 BDY26 KYS30/40 BYS30/30 ' -
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VQE14 VQE24 bu2527af wk16412 WK16414 WK16413 Tesla katalog GT322 GT322A GT328A GT328B GT346A GT346B
Abstract: 10 10 10 1 1 1 I T03/2 T03/2 T03/2 T03/2 T03/2 T03/2 BDY23 BDY24 BDY25 BDY73 BDY74 BDY76 Analog -
OCR Scan
KD3055 KC635 KD502 KU607 KU605 KFY18 KD503 KF517 101NU70 102NU70 103NU70 104NU70 105NU70 106NU70
Abstract: -3 BDY96 TO-3 BDY24 TO-3 BDY48 TO-3 BDY75 TO-3 BDY97 TO-3 BDY25 TO-3 BDY49 TO -
OCR Scan
KF520 KT725 KT707 diac kr 206 KT206-200 KYS 30 40 diode KA136 KA206 KA207 KA221 KA222 KA223
Abstract: TRANSISTORS £0,84 BDX14 BDX18 BDY25 BDY25a BDY25b BDY25c BDY26 BDY26a BDY26b BDY26c BDY27 -
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3DD207 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766
Abstract: 1156211306007 27 37 â'" BDY24 1156232205006 31 .36 _ BC414 1156211307008 27 37 â'" BDY25 1166232206007 31 36 -
OCR Scan
2N2222A 338 TFK 949 BSY19 ad161 ac128 al103 2CY17 2CY18 2CY19 2CY20 2CY21 500MA
Abstract: ISKRA ELECTRONICS INC 5SE I> â  4003477 0000=114 1 â  T-tt'lS' T-2>3 -/J Silicijevi mocnostni transistorji Power silicon transistors Tip/Type Polariteta Polarity .; MCBO. UcEO UEBO . Ptot â Ã¶bp hpE prl/at lc fr UcEsat SI./ Fig. . -
OCR Scan
y51 h 120c BFQ59 bd192 Silec Semiconductors MM1711 2SD325 240MWF 100MWF 300MWF 100MA 150MWF 300MA
Abstract: BYS26/40 ') KD135 BD135 KDY25 BDY25 KYS30/30 BYS30/30 ') KD136 BD136 KDY26 BDY26 KYS30/40 BYS30/30 ' -
OCR Scan
2M222 8D139 2SC1313 equivalent Avantek rf amplifier UAA-8616M hitachi 2SJ82 RCA 40934 transistor T0226 T0237
Abstract: TRANSISTORS £0,84 BDX14 BDX18 BDY25 BDY25a BDY25b BDY25c BDY26 BDY26a BDY26b BDY26c BDY27 -
OCR Scan
axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART 74151N diode zener ph c5v6 SESCOSEM semiconductor BR705A BR71A BR72A BR74A BR76A BR78A
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