NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| BDY25 | Comset Semiconductors | NPN SILICON TRANSISTOR, DIFFUSED MESA |
4 pages, |
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| BDY25 | Iskra Ltd | Power Silicon Transistors / Switching Transistors |
1 pages, |
Scan | |
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| BDY25 | N/A | Shortform IC and Component Datasheets (Plus Cross Reference Data) |
1 pages, |
Scan | |
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| BDY25 | N/A | Shortform Data and Cross References (Misc Datasheets) |
1 pages, |
Scan | |
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| BDY25 | N/A | Shortform Transistor Datasheet Guide |
1 pages, |
Scan | |
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| BDY25 | Semelab | Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=140 / Ic=6 / Hfe=15-180 / fT(Hz)=10M / Pwr(W)=87.5 |
1 pages, |
Original | |
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| BDY25 | Semiconductors Ltd. | High Voltage Video Amplifiers / Television and Video Devices |
1 pages, |
Scan | |
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| BDY25 | SGS-Thomson | Transistor Datasheet |
4 pages, |
Scan | |
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| BDY25 | Thomson-CSF | Condensed Data Book 1977 |
1 pages, |
Scan | |
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| BDY25 | Thomson-CSF | Power Transistor Data Book 1975 |
9 pages, |
Scan | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: BDY23 BDY23, 180 T2 BDY24 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large , Temperature TStg Storage Temperature @ TC = 25° Value BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 181T2 181T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 COMSET SEMICONDUCTORS Unit 60 90 140 60 100 200 ... | Original |
4 pages, |
182T2 181T2 180T2 BDY24 BDY25 BDY23 BDY23 abstract |
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| Abstract: BDY23 BDY23, 180 T2 BDY24 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large , Temperature TStg Storage Temperature @ TC = 25° Value BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 181T2 181T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 BDY23 BDY23, 180T2 180T2 BDY24 BDY24, 181T2 181T2 BDY25, 182T2 182T2 COMSET SEMICONDUCTORS Unit 60 90 140 60 100 200 ... | Original |
4 pages, |
BDY25 BDY24 BDY23 182T2 181T2 180T2 BDY23 abstract |
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| Abstract: BDY25 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 140V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 6A 7.92 (0.312) 12.70 (0.50) All Semelab hermetically ... | Original |
1 pages, |
BDY25 BDY25 abstract |
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| Abstract: BDY11 * SEMELAB LT» 37E D â- 0133167 QQQQQMß fi iBSMLB T- 3 3'^/ TVPeNo. 5on",y Po,arl* Packa9e V ... | OCR Scan |
1 pages, |
BDY26 BDY20 BDY23 BDY24 BDY25 BDY12 BDY27 BDY29 BDY37 BDY58 BDY71 BDY13 BDY47 BDY61 BDY16 BDY11 BDY12 BDY11 abstract |
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| Abstract: ISKRA ELECTRONICS INC 5SE I> â- 4003477 0000=114 1 â- T-tt'lS' T-2>3 -/J Silicijevi mocnostni transistorji Power silicon transistors Tip/Type Polariteta Polarity .; MCBO. UcEO UEBO . Ptot â- öbp hpE prl/at lc fr UcEsat SI./ Fig. . ... | OCR Scan |
1 pages, |
transistor 2N3442 2N3772 2N3773 2N4348 BDX18 bdx18 me BDY24 BDY25 BDY56 BDY74 BU134 2N3055 BU208A ISKRA BDY24 abstract |
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| Abstract: NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM, MESA DIFFUSES *BDY23/I80T2 BDY23/I80T2 *BDY24 BDY24 181T2 181T2 *BDY25,182T2 182T2 - LF large signal power amplification Amplification BF grands signaux de puissance - High current fast switching Commutation rapide fort courant ^ Preferred device Dispositif recommandé vCEO â- c ptot (60 V < 90 V ( 140 V 6 A 87,5 W BDY 23 BDY 24 BDY 25 180 T2 181 T2 182T2 182T2 Rth(j-c) 2°C/W max (15-45 modèle A h21E(2A) ... | OCR Scan |
9 pages, |
BDY25 BDY24 BDY23 182T2 181T2 180T2 BDY23/I80T2 BDY23/I80T2 abstract |
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| Abstract: 4DR823B 6NZ70 ·BDX54E BDX54E ·BDX54F BDX54F ·BDX54S BDX54S ·BDX85 BDX85 ·BDX86 BDX86 ·BDX87 BDX87 ·BDX88 BDX88 'BDY12B BDY12B 'BDY23 BDY23 'BDY24 BDY24 'BDY25 'BDY73 BDY73 'BDY74 BDY74 'BDY76 BDY76 ... | Original |
266 pages, |
KT707 KF190 KD712 Tesla KT505 KF520 SU160 KUV46A KC237V LQ410 KUY12 kd503 KT708 VQE14 KT725 KD502 datasheet abstract |
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| Abstract: ) KD135 KD135 BD135 BD135 KDY25 KDY25 BDY25 KYS30/30 KYS30/30 BYS30/30 BYS30/30 ') KD136 KD136 BD136 BD136 KDY26 KDY26 BDY26 BDY26 KYS30/40 KYS30/40 BYS30/30 BYS30/30 ') KD137 KD137 BDI 37 ... | OCR Scan |
14 pages, |
KU606 KC508 KU612 KU602 KUY12 KC635 AD161/AD162 SF245 Tesla KU611 SU161 KFY46 KD3055 KU608 KC507 KD503 datasheet abstract |
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| Abstract: bpdp30 74151N BTP-128-400 BDY24 BDY24 1156232205006 31 .36 _ BC414 BC414 1156211307008 27 37 - BDY25 1166232206007 31 36 '- BC416 BC416 - 27 37 - ... | OCR Scan |
116 pages, |
tyrystor HRY7450R dIODA zENER btp129-650 dioda zener B12 BD286 UCY74123 BD285 bdp620 BTP128 BTP129 BD282 blyp22 BZP683 datasheet abstract |
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| Abstract: STR6020 BDW36 STRS6309 STR5412 STRS6307 2N3054 2N3054 TO-66 2N32741 2N32741 TO-66 2N4240 2N4240 TO-66 2N4908 2N4908 TO-3 2N3054A 2N3054A TO-66 2N3766 2N3766 TO-66 2N4273 2N4273 TO-66 2N4909 2N4909 TO-3 2N3055 2N3055 TO-3 2N3767 2N3767 TO-66 2N4298 2N4298 TO-66 2N4910 2N4910 TO-66 2N3171 2N3171 TO-3 2N3771 2N3771 TO-3 2N4347 2N4347 TO-3 2N4911 2N4911 TO-66 2N3172 2N3172 TO-3 2N3772 2N3772 TO-3 2N4348 2N4348 TO-3 2N4912 2N4912 TO-66 2N3173 2N3173 TO-3 2N3773 2N3773 TO-3 2N4387 2N4387 TO-66 2N4913 2N4913 TO-3 2N3174 2N3174 TO-3 2N3789 2N3789 TO-3 2N4388 2N4388 TO-66 2N4914 2N4914 TO-3 2N3183 2N3183 TO-3 2N3790 2N3790 T ... | Original |
26 pages, |
mj2955 TO-220 BDY11 bu508df 2SA1941 equivalent 2sc2625 equivalent BU102 2SC3262 2sc1027 2SC3883 S2000A3 2N3055 TO-220 2N3054 2N3055 2N3171 2N3054 abstract |
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| Abstract: TO 3 (CB 19) Power transistors NPN « Triple diffused » Fast switching Transistors de puissance NPN « Triple diffusés » Commutation rapide Type Case Ptnt *VCEX ic h21E /'c VCE sat/'C f'B fT td+tr 's tf TPu76 Boitier (Wl VCEO (VI (Al min max (A) (VI max M (Al (MHz) min •typ (MS) max •typ (MS) max •typ (lis) max •typ page ESM 1503 TO 3 60 "1500 5 2 4 2 •0,5 •2,5 •0.6 # BU 142 TO 3 70 •900 12 1,5 8 1,8 1 # BU 143 TO 3 70 •1000 12 1,5 8 1,8 1 # BU 144 TO 3 70 •1100 12 1.5 8 1 ... | OCR Scan |
1 pages, |
185t2 182T2 BU 647 datasheet abstract |
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| Abstract: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM, MESA DIFFUSES 2N 1208 2N 1209 • LF large signal amplification Amplification BF grands signaux - High current switching Commutation fort courant 60 V 2N 1208 CEO 45 V 2N 1209 'c 5 A Ptot 85 W Rth (j-c) 2,05°C/W max. h21E (2 A) 15 min. 2N 1208 20 min. 2N 1209 Dissipation derating Variation de dissipation N V i i i \ s. i i i i \ i i i \ Case TO-61 - See outline drawing CB-69 CB-69 on ... | OCR Scan |
717 pages, |
THOMSON-CSF PRODUCTS esm 231 Thomson Power Transistor 1975 tyn 277 transistor bul 791 bul 810 TH LG 631 TV LG transistor 3055 out hv equivalent of transistor bul 38 da transistor ST TYN 616 amplificateur BF datasheet abstract |
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| Abstract: 2. TRANZYSTORY Wykaz oznaczert parametrów technicznych CCBO pojemnoéó kolektor - baza C12es pojemnoóò sprzezenla zwrotnego w ukladzie wapòlnego «altera /OE/ C12ss pojemnoaò sprzeienia zwrotnego w ukladzie wspòlnego iròdla /OS/ t^ oziatotiiwoà é pomiarowa fT oziatotilwos6 graniczna F wspòlczynnlk szumòw h2le malosygnalowy zwarciowy wspòlczynnlk prz*MSzenia pr^dowego w OE IB pr^d bazy Ic prqd kolektora I pr^d drenu IDSS prqd drenu przy zwarciu bramka - ¿ròdio /UGS «0/i przy okreélonym UDg IG prqd b ... | OCR Scan |
29 pages, |
BDP 396 bdp 286 BdP 285 BDP 284 650X 406X 323X CB-19 BS 6004 datasheet abstract |
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| Part | Manufacturer | Description | Shortform Datasheet | Ordering |
| BDY25 | N/A | High Power, High Voltage, High Frecvency | |
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| BDY25A | N/A | High Power, High Voltage, High Frecvency | |
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| BDY25(A-C) | N/A | Silicon NPN | |
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| BDY25B | N/A | High Power, High Voltage, High Frecvency | |
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| BDY25C | N/A | High Power, High Voltage, High Frecvency | |
| NTE Electronics Part | Industry Part |
| Part | Similar Part | Notes |
| BDY25 Buy | 180T2 Buy | |
| BDY25 Buy | 180T2A Buy | |
| BDY25 Buy | 181T2 Buy | |
| BDY25 Buy | 181T2A Buy | |
| BDY25 Buy | 182T2 Buy | |
| BDY25 Buy | 182T2A Buy | |
| BDY25 Buy | 182T2C Buy | |
| BDY25 Buy | 2N2018 Buy | |
| BDY25 Buy | 2N2019 Buy | |
| BDY25 Buy | 2N2020 Buy |