BDX87C BDX88C - Datasheet Archive

 

Product Specification BDX87C Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type

 

SavantIC Semiconductor Product Specification BDX87C BDX87C Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type BDX88C BDX88C ·DARLINGTON APPLICATIONS ·Designed for use in power linear and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current(peak) 18 A IB Base current 0.2 A PT Total power dissipation 120 W Tj Max. operating Junction temperature Tstg TC=25 Storage temperature 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.45 /W SavantIC Semiconductor Product Specification BDX87C BDX87C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=24mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=12A ;IB=120mA 3.0 V Base-emitter saturation voltage IC=12A ;IB=120mA 4.0 V VBE Base-emitter on voltage IC=6A ; VCE=3V 2.8 V hFE-1 DC current gain IC=5A ; VCE=3V 1000 hFE-2 DC current gain IC=6A ; VCE=3V 750 hFE-3 DC current gain IC=12A ; VCE=3V 100 ICBO Collector cut-off current VCB=100V; IE=0 TC=150 0.5 5.0 mA ICEO Collector cut-off current VCE=50V; IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA VF-1 Diode forward voltage IF=3A 1.8 V VF-2 Diode forward voltage IF=8A VBEsat CONDITIONS MIN TYP. 100 UNIT V 18000 2.5 2 MAX V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDX87C BDX87C