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Part : BDX67B Supplier : Motorola Manufacturer : Chip One Exchange Stock : 20 Best Price : - Price Each : -
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BDX67 Datasheet

Part Manufacturer Description PDF Type
BDX67 Comset Semiconductors 60V NPN silicon darlington - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=16 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=150 Original
BDX67 Philips Semiconductors Silicon Darlington Power Transistors Original
BDX67 Semelab NPN Epitaxial Base Darlington Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=16 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=150 Original
BDX67 Mullard Quick Reference Guide 1977/78 Scan
BDX67 N/A Basic Transistor and Cross Reference Specification Scan
BDX67 N/A Shortform Transistor PDF Datasheet Scan
BDX67 N/A Shortform Transistor PDF Datasheet Scan
BDX67 N/A Cross Reference Datasheet Scan
BDX67 N/A Diode, Transistor, Thyristor Datasheets and more Scan
BDX67 N/A Semiconductor Master Cross Reference Guide Scan
BDX67 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDX67 N/A Shortform Electronic Component Datasheets Scan
BDX67 N/A Shortform Transistor Datasheet Guide Scan
BDX67 N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDX67 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDX67A Comset Semiconductors NPN Silicon Darlingtons - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=16 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=150 Original
BDX67A Philips Semiconductors Silicon Darlington Power Transistors Original
BDX67A Semelab NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR Original
BDX67A Mullard Quick Reference Guide 1977/78 Scan
BDX67A N/A Basic Transistor and Cross Reference Specification Scan
Showing first 20 results.

BDX67

Catalog Datasheet MFG & Type PDF Document Tags

BDX67

Abstract: transistor bdx67 N AMER PHILIPS/DISCRETE 25E D â  bt.53^31 ooim? 7 â  BDX67; 67A BDX67B; 67C T , Dômifi 1 BDX67; 67A 11 BDX67B; 67C II J V_ T-33-29 c RI typ. 3 ki2 R2 typ. 80 fi Fig. 2 Circuit , power transistors 25E D â  bb53131 oail'm â¡ â  BDX67; 67A BDX67B; 67C CHARACTERISTICS Tj = 25 , BDX67; 67A BDX67B; 67C >/» J 2SE D aoEaoaa 1 CHARACTERISTICS (continued) Tj = 25 °C unless , ) ESE D â  b 1353131 0Q5Q0Q1 3 â  BDX67; 67A BDX67B; 67C 313JI I Jl T-33-29 TIM 0â'"I ru 5mH
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BDX66 BDX66A BDX66B BDX66C transistor bdx67 BDX66B BDX66A BDX66 BDX66B TRANSISTOR transistor sb 772 darlington power transistor 10a T-33-H 7Z82929

BDX67

Abstract: BDX67A Collector Current ICM Value BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Unit 60 80 , BDX67B BDX67C 0.25 A PT Power Dissipation BDX67 BDX67A BDX67B BDX67C 150 Watts W/°C TJ Junction Temperature BDX67 BDX67A BDX67B BDX67C -55 to +200 °C IB TS , 1.17 BDX67 BDX67A BDX67B BDX67C °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise
Comset Semiconductors
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BDX67

Abstract: BDX67A Collector Current ICM Value BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Unit 60 80 , BDX67B BDX67C 0.25 A PT Power Dissipation BDX67 BDX67A BDX67B BDX67C 150 Watts , BDX67A BDX67B BDX67C IB @ TC = 25° BDX67, A, B, C COMSET SEMICONDUCTORS 1/4 BDX67, A , Value Unit 1.17 BDX67 BDX67A BDX67B BDX67C °C/W ELECTRICAL CHARACTERISTICS TC
Comset Semiconductors
Original

BDX67

Abstract: npn 120v 10a transistor applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE BDX67 120 BDX67C 140 BDX67 60 BDX67A 80 BDX67B 100 BDX67C VEBO 100 BDX67B VCEO 80 BDX67A , Sustaining Voltage MAX UNIT 60 BDX67A TYP. 80 IC= 100mA ; L= 25mH V BDX67B 100 , BDX67B VCB= 120V; IE= 0 VCB= 120V; IE= 0; TC=150 1.0 5.0 BDX67C VCB= 140V; IE= 0 VCB= 140V , MAX UNIT 1.17 /W BDX67/A/B/C isc Product Specification INCHANGE Semiconductor
INCHANGE Semiconductor
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npn 120v 10a transistor NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON 120v 10a transistor transistor bdx66 NPN Transistor VCEO 80V 100V hfe 100 BDX66/A/B/C BDX67/A/B/C

bdx67

Abstract: transistor bdx67 N AMER PHILIPS/DISCRETE E5E bL.53â'˜ 3 > 1 Q O nW 7 â  BDX67; 67A BDX67B; 67C T , PHILIPS/BISCRETE BDX67; 67A 1 1 BDX67B; 67C Jl 5SE D bbS3T31 â¡ Q l'm fl ^ T-33-29 R1 typ , 1 U J I | Silicon Darlington power transistors â¡ â  BC BDX67; 67A bc BDX67B; 67C , 1988 773 N ArtER P H I L I P S / D I S C R E T E BDX67; 67A BDX67B; 67C SSE D , 1980 775 N AMER PHILIPS/DISCRETE BDX67; 67A BDX67B; 67C 25E D Jl 1 bbSB'IBl Q02Q0Q2
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S3T31 53T31

BDX67

Abstract: SavantIC Semiconductor Product Specification BDX67 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter , Semiconductor Product Specification BDX67 Silicon NPN Power Transistors CHARACTERISTICS Tj , dimensions 3 BDX67 -
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BDX67C

Abstract: BDX67C BDX67B BDX67A BDX67 BDX66B BDX66A BDX66 BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 20.3 max. E 1 .0 B 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 30.1 39.5 max. 4.2 10.9 12.8 PNP complements are: BDX66, BDX66A , VCEO 7/99 BDX67 BDX67A BDX67B BDX67C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise
Semelab
Original
BDX67C BDX67B BDX67A BDX67 BDX66B BDX66A BDX66 BDX66C Transistor TRANSISTOR BDX transistor BDX 80 diagram DARLINGTON BDX 78

BDX66C

Abstract: BDX67C BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 20.3 max. E 1 .0 B 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 30.1 39.5 max. 4.2 10.9 12.8 PNP complements are: BDX66, BDX66A , : sales@semelab.co.uk 7/99 BDX67 BDX67A BDX67B BDX67C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise
Semelab
Original

BDV56

Abstract: BDV57 BDS15 BDS16 BDS17 BDS18 BDS19 BDS20 BDS21 BDS28/A/B/C BDS29/A/B/C BDX67 BDX67A 50004-113 50004-113 No , 50004-057 Type BDX67B BDX91 BDX92 BDX93 BDX94 BDX95 BDX96 BDY55 BDV56 BDV57 BDY58 BDY90 BDY91 BDY92 BFT32A
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2N3055 2N6033 TIPL777 cv9936 BUS11A BUX11 2N2218 2N2218A 2N2219 2N2219A 2N2913 2N2914
Abstract: BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67A BDX67B BDX67C BDX83 BDX83A BDX83B BDX83C -
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00GG44T BDX65 BDX65A BDX65B BDX84 BDX84A

BDX71

Abstract: BDY10 SEMELAB LTD 37E J> fll331fl? 0000D47 t â  SMLB TVpeNo. Sep"lon,ily P°lari* Package VCE0 ^ hFE( VCE/'C PD BDX66B SCREEN PNP TO 3 100 16 lkmin 3/10 7M 150 BDX66C SCREEN PNP TO 3 120 16 lkmin 3/10 7M 150 BDX67 CECC NPN * TO 3 60 16 lkmin 3/10 7M 150 BDX67A CECC NPN * TO 3 80 16 lkmin 3/10 7M 150 BDX67B CECC NPN * T03 100 16 lkmin 3/10 7M 150 BDX67C HI-REL NPN * TO 3 120 16 lkmin 3/10 7M 150 BDX70 NPN T0220 60 10 20-80 4/4 75 BDX71 NPN T0220 60 10 20-80 4/4 75 BDX72 NPN
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BDX74 BDX86C BDY10 I/BDX72 bdx83c bdx84c BDx77 BDX73 BDX75 BDX77 BDX78 BDX84B

transistor bdx66

Abstract: BDX66B TRANSISTOR isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE BDX66 VEBO Collector-Emitter Voltage -100 BDX66B -120 -140 -60 BDX66A -80 BDX66B -100 BDX66C VCEO
INCHANGE Semiconductor
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Audio Output Transistor Amplifier BDX66 Darlington data transistor darlington for High Power Audio

philips BDV64A

Abstract: T1P121 -220AB 12A 60V 80V 100V 120V 1000 at 5A 2V at 5 A/20 m A PNP - 2.5ps NPN = 6/is at 5A BDX67 BDX67A BDX67B BDX67C BDX66 BDX66A BDX66B BDX66C TO-3 16A 60V 80V 100V 120V 1000 at 10A 2 V at 10A/40mA 3.5ns at 10A
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BDT63A philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

philips BDV64A

Abstract: BDX67 PNP - 2.5jrs NPN = 6 /is a t5 A BDX67 BDX67A BDX67B BDX67C BDX66 BDX66A BDX66B BDX66C
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BD679 BD681 BD678 BD682 BD684 BDT61

2N3055

Abstract: 2N3055H BDX63A BDX64 BDX64C BDX65 BDX65A-MOD BDX65B BDX65C BDX66A/02 BDX66B BDX66C BDX67 BDX67C BDX92 BDX96
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U3158 2N2891 BDY25C BSW68A BUV26 BUX51 2N3055H bu103a bu102 TRANSISTOR 2N1890 2N1893 2N2060 2N2102 2N2102LL

2N3055

Abstract: mj2955 * B D S2I* BDX67 BDX67A BDX67B B D X 9I BDX92 BDX93 BDX94 BDX95 BDX96 BDY55 BDY56 BDY57 BDY58 BDY90
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BSV64 BSW68 mj2955 50004 2N3440 ST T0220SM 0220M 2N5338 2N5339 2N54I6 2N567I

BDX67

Abstract: transistor bdx66 LMTED Jk>X kbc 2JcO S A Co . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and genera! amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A, BDX67B and BDX67C. quick reference data BDX66 66A 66B 66C Collector-base voltage (open emitter) ~VC80 max. 60 80 100 120 V Collector-emitter voltage {open base) ~vCEO max. 60 80 100 ' 120 V Collector current (peak value) -'cm max. 20
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HC10A T700 VC80 T250 transistor NES 7Z57S01

BDY11

Abstract: BDX65C SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67CECC BDX67A BDX67A CECC BDX67B BDX67B CECC BDX67C BDX83 BDX83A BDX83B BDX83C BDX84 BDX84A BDX84B BDX84C BDX85 BDX85A BDX85B BDX85C BDX86 BDX86A BDX86B BDX86C BDX87 BDX87A BDX87B BDX87C BDX88 BDX88A BDX88B BDX88C BDX91 BDX91 CECC BDX92 BDX92 CECC BDX93
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BDY11 BDY23 BDY12 BDY13 BDY16 BDY20

BDX66

Abstract: transistor bdx66 N AMER PHILIPS/DISCRETE E5E D m ^53^31 DOmä? M â  BDX66; 66A . BDX66B; 66C T-ZZ-31 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A, BDX67B and BDX67C. QUICK REFERENCE DATA Collector current (peak value) Total power dissipation up to Tmb=25 °C Junction temperature D.C. current gain -IC= 1A;-VCE = 3V -lc= 10A;-VCE = 3 V
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12697 transistor 66a transistor B 764 T-33-31 7Z66446
Abstract: N AMER PHILIPS/DISCRETE HSE D ^ 53^31 DoniB? 4 â  BDX66; 66A . BDX66B; 66C T-3S -3I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67, BDX67A, BDX67B and BDX67C. QUICK REFERENCE DATA 66A 66B 66C â' VCBO max. BDX66 60 80 100 120 V Collector-emitter voltage (open base) â' v CEO max. 60 -
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T-33-3T T-33-37

BU 450 bdx

Abstract: bdx 330 SavantIC Semiconductor Product Specification BDX67 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter , Semiconductor Product Specification BDX67 Silicon NPN Power Transistors CHARACTERISTICS Tj , dimensions 3 BDX67 -
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BDV67 BDV66 BDV65 BDV64 BDX33 BDX53 BU 450 bdx bdx 330 BUX 837 BUX37 ESM855

TRANSISTOR BDX

Abstract: transistor BDX 62 A BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 20.3 max. E 1 .0 B 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 30.1 39.5 max. 4.2 10.9 12.8 PNP complements are: BDX66, BDX66A , VCEO 7/99 BDX67 BDX67A BDX67B BDX67C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise
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BUV54 transistor BDX 62 A transistor BU 184 darlington NPN 1000V 8a transistor BU800 transistor BU 109 transistor BDX 65 130CIV 109DP 104DP CB-244 CB-19 CB-159

bdx 330

Abstract: DARLINGTON ESM 749 BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 20.3 max. E 1 .0 B 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 30.1 39.5 max. 4.2 10.9 12.8 PNP complements are: BDX66, BDX66A , : sales@semelab.co.uk 7/99 BDX67 BDX67A BDX67B BDX67C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise
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BUV74 BUV37 DARLINGTON ESM 749 box53a DARLINGTON ESM 30 800V PNP bov66 BDX54 T0-220 CB-117 CB-285

pnp 400v 10a

Abstract: box53a BDS15 BDS16 BDS17 BDS18 BDS19 BDS20 BDS21 BDS28/A/B/C BDS29/A/B/C BDX67 BDX67A 50004-113 50004-113 No
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pnp 400v 10a bdv 648 vceo 800V PNP BDV65, BDV64 bdx 66 bdx 67 BDX33d

BDX 625

Abstract: tip 120 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE BDX66 VEBO Collector-Emitter Voltage -100 BDX66B -120 -140 -60 BDX66A -80 BDX66B -100 BDX66C VCEO
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BDX 625 tip 120
Showing first 20 results.