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BDX62C Datasheet

Part Manufacturer Description PDF Type
BDX62C Comset Semiconductors PNP Silicon Darlingtons - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=8 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=90 Original
BDX62C Philips Semiconductors Silicon Darlington Power Transistors Original
BDX62C Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=8 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=90 Original
BDX62C N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDX62C N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDX62C N/A Shortform Transistor Datasheet Guide Scan
BDX62C N/A Basic Transistor and Cross Reference Specification Scan
BDX62C N/A Shortform Transistor PDF Datasheet Scan
BDX62C Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan
BDX62C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan

BDX62C

Catalog Datasheet MFG & Type PDF Document Tags

BDX62

Abstract: BDX62B (RMS) IC Collector Current ICM IB PT Value BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C Unit -60 -80 -100 -120 -60 -80 -100 -120 V V -5.0 V -8 A -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C @ TC = 25° COMSET SEMICONDUCTORS 1/5 BDX 62, A
Comset Semiconductors
Original
62AB

BDX62

Abstract: BDX62A BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C -60 -80 -100 -120 -60 -80 -100 -120 -5.0 Unit V V V -8 A -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A PT Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C TJ Junction Temperature -55 to +200 °C TS Storage Temperature BDX62 BDX62A BDX62B BDX62C IB @ TC = 25
Comset Semiconductors
Original

BDX62A

Abstract: BDX62B (RMS) IC Collector Current ICM IB PT Value BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C Unit -60 -80 -100 -120 -60 -80 -100 -120 V V -5.0 V -8 A -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C @ TC = 25° COMSET SEMICONDUCTORS 1/5 BDX 62, A
Comset Semiconductors
Original
Fh21e

BDX62

Abstract: transistor BDX62 °C; bdx62b â'¢ -'CBO < 2 mA" iE s o; -vCB = 70 v; Tj= 200 BDX62C Ib = 0;-Vce = -1^Vceo -'ceo < 0 , -I CMmax Cmax 1 â'¢7Z77084.1 6=0,01 s 5 Cs 5 P W BDX62A 8DX62B BDX62C \ 0,1 ms 10
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OCR Scan
BDX63 BDX63A BDX63B BDX63C transistor BDX62 fxs 100 10 S3131 D01TIN7
Abstract: BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 120V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can Semelab
Original

BDX62C

Abstract: BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 120V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 8A 7.92 (0.312) 12.70 (0.50) All Semelab
Semelab
Original
Abstract: BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 120V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can Semelab
Original

bdx65b

Abstract: bdx32 SEMELAB LTD 37E ]> Ö1331Ö7 0DD004b M SMLB T - 3 3 -¿>/ 'C cont Type No. Option'1 *^ Polari'y Package v CEO hFE< Vc e / ' c PD BDX14 BDX16 BDX18 BDX20 BDX27 BDX28 BDX29 BDX30 BDX31 BDX32 BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX35 BDX53 BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B BDX54C BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A HI-REL HI-REL SCREEN SCREEN HI-REL HI-REL HI-REL
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OCR Scan
0DD004 T0220 T0126
Abstract: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 20.3 max. E 1 .0 B 2. 5 16.9 30.1 39.5 max. 4.2 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase Semelab
Original

k 117

Abstract: k117 SENELAB LTD 37E J> m 0133107 OOOmOTfl : MAiMUFACTURIIMG ISMLB Type Na 3>ÃBAX65 BCW34V BCW35/, BCY30A\ i BCY31A-/ 1 BCY32A BCY33A BCY34A BCY39A"' BCY40A.lv Kl BCY58 BCY59 BCY78 BCY79 ) 0 BD106A\ BD106B ! BD107A â'¢ BD107B BD121_J BS/CECC â  BS-O BS-0 BS-O, CV-O BS-O, CV-O BS-O, CV-O BS-O, CV-O BS-O,CV-O ìf/ /Mt^ BD124-à BDX14\ BDX2M BDX30J BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A fBDX65B BDX65C rjO rJ CECC-O CECC-O CECC-O CECC-O CECC-O CECC-O CECC-O
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OCR Scan
k 117 k117 T0532 BD106 12NPN BCW35

diode bdx64c

Abstract: bdx65b SEMELAB LT» Type Na "J&BAX65 37E D â  Ã"1331Ã"7 GODDGTfi 1 MANUFACTURING ISMLB I BCY32A BCY33A BCY34A BCY58 , BCY59 ) BCY78 I BCY79 BD106AN BD106B BD107A BD107B BDX14\ BDX2M BDX30J BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A |^BDX65B BDX65C BS/CECC Polarity Package VCEO 'c cont - BS-0 BS-0 UBS-O, CV-0 ' BS-O, CV-0 Diode Array NPN PNP PNP PNP T077 T018 T018 T05 T05 40 45 45 64 64 0.3 0.6 0.6 0.1 0.1 BS-O, CV-0 BS-O, CV-0 BS-O
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OCR Scan
diode bdx64c pnp 039 10-35* DIODE sot9

TRANSISTOR BDX

Abstract: BDX63A BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 20.3 max. E 1 .0 B 2. 5 16.9 30.1 39.5 max. 4.2 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase
Semelab
Original
TRANSISTOR BDX Transistor 63B transistor BDX 65 darlington complementary power amplifier

BDW36

Abstract: BuW83 BDX62A HR PNP T03 80 8 lkmin 3/3 7M 90 BDX62B HR PNP T03 100 8 lkmin 3/3 7M 90 bdx62c HR PNP T03 120 8
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OCR Scan
BDS29C BUV92 BDV95 BDV96 BDW21 BDW30 BDW36 BuW83 BUW83A BDW34 BDW32 1331B7 D0D044 S0T93M S0T93
Abstract: ; BDX62A l E = 0; - V CB = 60 V ; T j = 200 °C; BDX62B l E = 0; â'" CB = 70 V; Tj = 200 °C; BDX62C V -
OCR Scan
T-33-31 S3T31 T-33-3T 7Z6732S 53T31

WF VQE 13

Abstract: BDX63B N AMER PHILIPS/DISCRETE 5SE D â  ^53131 DOinS? b â  BDX63; 63A BDX63B; 63C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BDX62A, BDX62B and BDX62C. QUICK REFERENCE DATA BDX63 63A 63 B 63 C Collector-base voltage (open emitter) vCBO max. 80 100 120 140 V Collector-emitter voltage (open base) VCEO max. 60 80 100 120
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OCR Scan
WF VQE 13 wf vqe 14 e WF VQE 11 E WF vqe 13 D Wf vqe 14 WF VQE 12 7Z697001 T-33-29 BDX63R- 7Z82177 7Z77086 S313L

BDX63

Abstract: N ANER PHILIPS/DISCRETE S5E D bbSETEl 0D111S7 b â  BDX63; 63A BDX63B; 63C T - Z Z - W SIL IC O N DARLIN GTO N PO W ER T R A N S IS T O R S N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BD X62A, B D X62B and BDX62C. Q U IC K R E F E R E N C E D A T A B D X63 v CBO max. Collector-emitter voltage (open base) V C EO max. Collector-base voltage
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OCR Scan

BDY11

Abstract: BDX65C SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67CECC BDX67A BDX67A CECC BDX67B BDX67B CECC BDX67C BDX83 BDX83A BDX83B BDX83C BDX84 BDX84A BDX84B BDX84C BDX85 BDX85A BDX85B BDX85C BDX86 BDX86A BDX86B BDX86C BDX87 BDX87A BDX87B BDX87C BDX88 BDX88A BDX88B BDX88C BDX91 BDX91 CECC BDX92 BDX92 CECC BDX93
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OCR Scan
BDY11 BDY23 BDX94 BDX95 BDX96 BDY10 BDY12

FET BFW10

Abstract: KP101A BDV94 BDV95 BDV96 BDX35 BDX38 BDX37 BDX42 BDX43 BDX44 BDX45 BDX46 BDX47 BDX62 BDX62A BDX62B BDX62C BDX63
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OCR Scan
BA583 FET BFW10 KP101A FET BFW11 KPZ20G CQY58A BFW10 FET BA220 BA221 BA223 BA281 BA314 BA315

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor SEMELAB LTD 37E ]> Ö1331Ö7 0DD004b M SMLB T - 3 3 -¿>/ 'C cont Type No. Option'1 *^ Polari'y Package v CEO hFE< Vc e / ' c PD BDX14 BDX16 BDX18 BDX20 BDX27 BDX28 BDX29 BDX30 BDX31 BDX32 BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX35 BDX53 BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B BDX54C BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A HI-REL HI-REL SCREEN SCREEN HI-REL HI-REL HI-REL
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Original
TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 2N109 2N1304 2N1305 2N1307 2N1613 2N1711

BGY41

Abstract: BFW10 FET transistor BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 120V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can
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OCR Scan
BGY41 BFW10 FET transistor CQY58 germanium RX101 JFET BFW10 SPECIFICATIONS LCD01

BU 450 bdx

Abstract: bdx 330 BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 20.3 max. E 1 .0 B 2. 5 16.9 30.1 39.5 max. 4.2 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase
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OCR Scan
BDV67 BDV66 BDV65 BDV64 BUV74 BUV54 BU 450 bdx bdx 330 BUX 837 BUX37 ESM855 T0-220

TRANSISTOR BDX

Abstract: transistor BDX 62 A BDX62A HR PNP T03 80 8 lkmin 3/3 7M 90 BDX62B HR PNP T03 100 8 lkmin 3/3 7M 90 bdx62c HR PNP T03 120 8
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transistor BDX 62 A transistor BU 184 darlington NPN 1000V 8a transistor BU800 transistor BU 109 transistor BU 104 130CIV 109DP 104DP CB-244 CB-19 CB-159
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