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BDX33B Datasheet

Part Manufacturer Description PDF Type
BDX33B Bourns NPN SILICON POWER DARLINGTONS Original
BDX33B Comset Semiconductors Complementary Silicon Power Darlingtons Transistors Original
BDX33B Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BDX33B Micro Commercial Components TRANS DARLINGTON NPN 80V 10A 3TO-220 Original
BDX33B Motorola Darlington Complementary Silicon Power Transistors Original
BDX33B On Semiconductor Darlington Complementary Silicon Power Transistors Original
BDX33B On Semiconductor Darlington Complementary Silicon Power Transistor Original
BDX33B On Semiconductor Darlington Complementary Silicon Power Transistors Original
BDX33B Power Innovations NPN SILICON POWER DARLINGTONS Original
BDX33B STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Original
BDX33B STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Original
BDX33B Continental Device India Plastic Power Transistor Scan
BDX33B Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
BDX33B Ferranti Semiconductors Quick Reference Guide 1985 Scan
BDX33B Ferranti Semiconductors Power Transistors 1977 Scan
BDX33B General Electric 10 A N-P-N darlington power transistor. 80 V. 70 W. Scan
BDX33B Mospec POWER TRANSISTORS(10A,70W) Scan
BDX33B Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDX33B Motorola European Master Selection Guide 1986 Scan
BDX33B Motorola NPN Darlington Complementary Silicon Power Transistors Scan
Showing first 20 results.

BDX33B

Catalog Datasheet MFG & Type PDF Document Tags

BDX33C

Abstract: bdx33a BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL 60 BDX33A BDX33B V CBO 80 BDX33C BDX33D 120 45 60 BDX33A BDX33B V CEO 80 V 100 BDX33C , change without notice. 1 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS , 80 BDX33C 100 120 V VCE = 30 V 0.5 IB = 0 BDX33A 0.5 IB = 0 BDX33B
Bourns
Original
BDX34 BDX34A BDX34B BDX34C BDX34D TCS130AF

BDX34C

Abstract: 10 amp pnp darlington power transistors Device BDX33B BDX33BG BDX33C BDX33CG BDX34B BDX34BG BDX34C BDX34CG Package Shipping TO , BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington , Collector-Emitter Sustaining Voltage at 100 mAdc · · · VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc , Adc - BDX33B, 33C/34B, 34C Monolithic Construction with Build-In Base-Emitter Shunt Resistors , Voltage BDX33B, BDX34B BDX33C, BDX34C VCEO Collector-Base Voltage TO-220AB CASE 221A-09 STYLE
ON Semiconductor
Original
10 amp pnp darlington power transistors marking 33c diode BDX334C BDX33B/D

BDX33C

Abstract: , BDX34C (PNP) ORDERING INFORMATION Device BDX33B BDX33BG BDX33C BDX33CG BDX34B BDX34BG BDX34C , BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors , 100 mAdc â'¢ â'¢ â'¢ VCEO(sus) = 80 Vdc (min) â' BDX33B, BDX334B = 100 Vdc (min) â' BDX33C, BDX334C Low Collectorâ'Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc â' BDX33B , BDX33B, BDX34B BDX33C, BDX34C VCEO Collectorâ'Base Voltage BDX33B, BDX34B BDX33C, BDX34C
ON Semiconductor
Original
220AB

BDX34 equivalent

Abstract: bdx33c NPN BDX33 ­ BDX33A ­ BDX33B ­ BDX33C PNP BDX34 ­ BDX34A ­ BDX34B ­ BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power , BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C Unit 45 60 V 80 100 45 60 V 80 100 1/6 NPN BDX33 ­ BDX33A ­ BDX33B ­ BDX33C , Temperature COMSET SEMICONDUCTORS @ TC = 25° Value BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A
Comset Semiconductors
Original
BDX34 equivalent

BDX33C

Abstract: BDX34C NPN BDX33 ­ BDX33A ­ BDX33B ­ BDX33C PNP BDX34 ­ BDX34A ­ BDX34B ­ BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power , BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C BDX33 BDX34 BDX33A BDX34A BDX33B BDX34B BDX33C BDX34C Unit 45 60 V 80 100 45 60 V 80 100 1/6 NPN BDX33 ­ BDX33A ­ BDX33B ­ BDX33C , Temperature COMSET SEMICONDUCTORS @ TC = 25° Value BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A
Comset Semiconductors
Original
bdx33c datasheet SILICON COMPLEMENTARY transistors darlington Comset BDX34B W

BDX33C

Abstract: BDX33B BDX33B BDX33C BDX34B BDX34C ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B and BDX33C are silicon epitaxial-base NPN power , R 2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Uni t NPN BDX33B BDX33C , . October 1998 1/4 BDX33B BDX33C BDX34B BDX34C THERMAL DATA R t hj-ca se Thermal Resistance , for BDX33B/34B for BDX33C/34C T case = 100 oC for BDX33B/34B for BDX33C/34C V CB = 80 V V CB =
STMicroelectronics
Original
P011C

DARLINGTON 30A 100V npn

Abstract: BDX33 (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C · Monolithic construction with Built-in , BDX33B BDX33C 3.66 G 4. Collector(Case) 15.31 C 3. Emitter 14.68 B 2 , .0 BDX33, 34 Darlington Transistors MAXIMUM RATINGS Characteristic Symbol BDX33B BDX33C , ) Characteristic Symbol Minimum Maximum Unit Collector-Emitter Sustaining Voltage (1) BDX33B , Current (VCE = 40V, IB = 0) BDX33B, BDX34B BDX33C, BDX34C (VCE = 50V, IB = 0) ICEO - 0.5 0.5
Multicomp
Original
DARLINGTON 30A 100V npn resistor farnell
Abstract: general purpose and low speed switching applications. NPN BDX33B BDX33C* PNP · High DC Current , (sus) = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C Monolithic Construction with , MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB BDX33B BDX34B 80 80 BDX33C BDX34C 100 100 Unit Vdc Vdc , Publication Order Number: BDX33B/D BDX33B BDX33C BDX34B BDX34C 80 PD, POWER DISSIPATION (WATTS) 60 ON Semiconductor
Original
Abstract: BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS ● Designed for , °C case temperature (unless otherwise noted) RATING SYMBOL BDX33A E T E L O S B O BDX33B V CBO 60 80 BDX33C BDX33D 120 45 BDX33A BDX33B V CEO BDX33C BDX33D , are subject to change without notice. 1 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER , VCE = 40 V IB = 0 BDX33B 0.5 VCE = 50 V IB = 0 BDX33C 0.5 Collector-emitter Bourns
Original
TCS130AH TCS130AJ TIS130AB
Abstract: V : BDX33A 60 V : BDX33B 80 V : BDX33C 100 V 45 V : BDX33A 60 V : BDX33B 80 V : BDX33C 100 V V cbO C ollecto r E m itter V oltage : BDX33 , Sym bol Min Typ Max Unit V : BDX33A 60 V : BDX33B 80 V : BDX33C , : BDX33C 60 V 80 Rbe = 100 Q. : BDX33B V 100 V cev(SUS) : BDX33A V 45 V , Voltage V : BDX33B : BDX33C 100 C ollector C utoff C urrent : BDX33 : BDX33A IcBO V -
OCR Scan
BDX33/A/B/C X34/34A/34B/34C BDX33/34 BDX33B/33C BDX33/33A

R/TRANSISTOR box 34c

Abstract: BDX33B MOTOROLA Order this document by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B , BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C · Low Collector­Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C · Monolithic Construction with Build­In , MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc , 2.5 Vdc VBE(on) - 2.5 Vdc VF - 4.0 Vdc BDX33B, 33C/34B, 34C
Motorola
Original
R/TRANSISTOR box 34c

BDX33D

Abstract: BDX33 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDX33 BDX33B 60 VCBO , ) UNIT 45 BDX33A Collector-base voltage (IE = 0) VALUE BDX33B 60 VCEO BDX33C 80 , not necessarily include testing of all parameters. 1 BDX33, BDX33A, BDX33B, BDX33C, BDX33D , 100 120 V VCE = 30 V 0.5 IB = 0 BDX33A 0.5 IB = 0 BDX33B 0.5 V CE = 50
Power Innovations
Original

BDX33C

Abstract: BDX33B BDX33B/33C BDX34B/34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDX33B and BDX33C are silicon epitaxial-base NPN power transistors , Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Unit NPN BDX33B BDX33C PNP , o C For PNP types voltage and current values are negative. May 1997 1/4 BDX33B/33C , Current (I C = 0) Test Conditions for BDX33B/34B for BDX33C/34C T case = 100 o C for BDX33B/34B
STMicroelectronics
Original
BDX33B/33C/34B/34C BDX33B/34B

33c marking

Abstract: BDX334 , BDX33C (NPN) BDX34B, BDX34C (PNP) ORDERING INFORMATION Device BDX33B BDX33BG BDX33C BDX33CG BDX34B , BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These , mAdc · · · VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - BDX33C, BDX334C Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C Monolithic , Voltage BDX33B, BDX34B BDX33C, BDX34C Collector-Base Voltage BDX33B, BDX34B BDX33C, BDX34C Symbol VCEO
ON Semiconductor
Original
33c marking BDX334 box 34b

BDX33

Abstract: BDX33A noted Symbol VCBO Value Units : BDX33 : BDX33A : BDX33B : BDX33C VCEO Parameter 45 60 80 100 V V V V Collector-Emitter Voltage : BDX33 : BDX33A : BDX33B : BDX33C 45 , : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C * Collector-Emitter Sustaining Voltage : BDX33 : BDX33A : BDX33B : BDX33C Test Condition Min. Typ. Max , Cut-off Current : BDX33 : BDX33A : BDX33B : BDX33C 0.2 0.2 0.2 0.2 mA mA mA mA : BDX33
Fairchild Semiconductor
Original
BDX34/34A/34B/34C

BDX330

Abstract: BDX338 B0X33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Copyright® 1997, Power , BDX33C BDX33D 8DX33 BDX33A Coflector-emitter voltage Ob = BDX33B BDX33C BDX33D Emitter-base voltage , indude testing of alt parameters. I NNOVAT I ONS P 3-91 BDX33, BDX33A, BDX33B, BDX33C, BDX33D , (see Note 3) BOX33B BDX33C BDX33D BDX33 BDX33A BDX33B BDX33C BDX33D V VCE = 30 V VCE = 30 V , Collector-emitter cut-off current Tq = 100°C Tc = 100"C Tc = 100°C Tc = 100°C Tc = 100°C BDX33 BDX33A BDX33B
-
OCR Scan
8DX33B BOX33 BDX330 BDX338 TRANSISTOR BDX330 BOX33D T1903- B0X330 T1S130AB

BDX33D

Abstract: TIS130 BDX33B BDX33C BDX33D Collector-Emitter Voltage (IB=0) BDX33 BDX33A BDX33B BDX33C BDX33D , ) BDX33 BDX33A BDX33B BDX33C BDX33D Q T (OHFWULFDO &KDUDFWHULVWLFV # & 8QOHVV 2WKHUZLVH , (VCE=30V, IB=0) BDX33 0.5 (VCE=30V, IB=0) BDX33A 0.5 ICEO (VCE=40V, IB=0) BDX33B 0.5 (VCE , =30V, IB=0, TC=100 ) ÄÃ BDX33B (VCE=40V, IB=0, TC=100 ) ÄÃ BDX33C (VCE=50V, IB=0, TC=100 ) ÄÃ , =60V, IE=0) BDX33A 1.0 ICBO (VCB=80V, IE=0) BDX33B 1.0 (VCB=100V, IE=0) BDX33C 1.0 (VCB=100V, IE
-
Original
TIS130 VCe-30V

BDX33D

Abstract: BDX33 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS Designed for , BDX33A BDX33B V CBO 80 BDX33C 120 BDX33 V 100 BDX33D 45 60 BDX33A Collector-emitter voltage (IB = 0) UNIT 45 BDX33 Collector-base voltage (IE = 0) VALUE BDX33B , change without notice. 1 BDX33, BDX33A, BDX33B, BDX33C, BDX33D NPN SILICON POWER DARLINGTONS , 80 BDX33C 100 120 V VCE = 30 V 0.5 IB = 0 BDX33A 0.5 IB = 0 BDX33B
Bourns
Original

Box 34C

Abstract: box 34b ON Semiconductor ) NPN Darlington Complementary Silicon Power Transistors BDX33B BDX33C , Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) - BDX33B, 34B 100 Vdc (min.) - BDX33C, 34C Low Collector­Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C Monolithic , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc , Publication Order Number: BDX33B/D BDX33B BDX33C BDX34B BDX34C PD, POWER DISSIPATION (WATTS) 80
ON Semiconductor
Original
Box 34C

box 34b

Abstract: Box 34C MOTOROLA Order this document by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B , BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C · Low Collector­Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C · Monolithic Construction with Build­In , MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc , 2.5 Vdc VBE(on) - 2.5 Vdc VF - 4.0 Vdc BDX33B, 33C/34B, 34C
Motorola
Original
BDX33C MOTOROLA

BDX33c equivalent

Abstract: P6019 BDX33, BDX33A, BDX33B, BDX33C, BDX33D HARRIS SEMICOND SECTOR SbE D File Number 693 10 , ) Gain of 750 at 3 A (BDX33B, BDX33C, BDX33D) (FLANGE) 4 3 0 2 8 7 1 O D M O b l l S34 « H A S 7 ^ 3 , amplifiers O 9 2 C S -3 9 9 6 9 -C c JEDEC TO-22ÛAB The BDX33, BDX33A. BDX33B, BDX33C. and , circuits. The BDX33, BDX33A, BDX33B, and BDX33C are comple mentary to the BDX34, BDX34B, and BDX34C , 2-269 POWER TRANSISTORS HARRIS SEMICOND SECTOR SbE » BDX33. BDX33A. BDX33B. BDX33C. BDX33D
-
OCR Scan
P6019 BDX33c equivalent BDX33D equivalent X33B 69-6R 92CS-20697R2 92CS-20700RI I992S 98C3-20701R1 92CS-2CS94

BDX33CG

Abstract: BDX33BG BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington , ·Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - , BDX33B, 33C/34B, 34C ·Monolithic Construction with Build-In Base-Emitter Shunt Resistors ·Pb-Free , TRANSISTORS 80-100 VOLTS, 65 WATTS MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BDX33B , Vdc 1 80 100 VCB BDX33B, BDX34B BDX33C, BDX34C Emitter-Base Voltage Value 2 3
ON Semiconductor
Original
Showing first 20 results.