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Part : BDW94B Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 869 Best Price : £0.7180 Price Each : £1.42
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BDW94A Datasheet

Part Manufacturer Description PDF Type
BDW94A Bourns PNP SILICON POWER DARLINGTONS Original
BDW94A Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original
BDW94A Power Innovations PNP SILICON POWER DARLINGTONS Original
BDW94A Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan
BDW94A Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan
BDW94A Mospec Darlington Complementary Silicon Power Transistor Scan
BDW94A Mospec POWER TRANSISTORS(12A,45-100V,80W) Scan
BDW94A Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDW94A N/A Semiconductor Master Cross Reference Guide Scan
BDW94A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDW94A N/A Shortform Transistor Datasheet Guide Scan
BDW94A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDW94A N/A Shortform Transistor PDF Datasheet Scan
BDW94A N/A Cross Reference Datasheet Scan
BDW94A SGS-Ates Shortform Data Book 1977/78 Scan
BDW94A STMicroelectronics Shortform Data Book 1988 Scan
BDW94A Transys Electronics PNP SILICON POWER DARLINGTONS Scan
BDW94A Transys Electronics BJT, PNP, Darlington Power Transistor, IC 12A Scan
BDW94A_NL Fairchild Semiconductor TRANS DARLINGTON PNP 60V Original
BDW94A-S Bourns PNP DARLINGTON 60V 10A Original

BDW94A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary , (unless otherwise noted) RATING SYMBOL BDW94 Collector-base voltage (IE = 0) BDW94A V CBO -60 -80 BDW94C -45 BDW94A BDW94B V CEO BDW94C Emitter-base voltage V -100 , . 1 BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BDW94 BDW94A MAX Bourns
Original
BDW93 BDW93A BDW93B BDW93C TCS135AE TCS135AG
Abstract: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS ● Designed for Complementary , temperature (unless otherwise noted) RATING SYMBOL BDW94 Collector-base voltage (IE = 0) BDW94A BDW94B VALUE -45 V CBO -60 -80 BDW94C -45 BDW94A BDW94B V CEO BDW94C , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW94, BDW94A, BDW94B, BDW94C , noted) PARAMETER TEST CONDITIONS MIN BDW94 Collector-emitter BDW94A -80 IB = 0 Bourns
Original
TCS135AI TIS130AA

BDW94

Abstract: dsa001364 VCBO Value Units : BDW94 : BDW94A : BDW94B : BDW94C VCEO Parameter - 45 - 60 - 80 - 100 V V V V Collector-Emitter Voltage : BDW94 : BDW94A : BDW94B : BDW94C - 45 - , VCEO(sus) ICBO Parameter Collector-Emitter Sustaining Voltage : BDW94 : BDW94A : BDW94B , Units V V V V Collector Cut-off Current : BDW94 : BDW94A : BDW94B : BDW94C - 100 - 100 - 100 - 100 µA µA µA µA : BDW94 : BDW94A : BDW94B : BDW94C ICEO VCB = - 45V, IE = 0
Fairchild Semiconductor
Original
dsa001364 BDW94/A/B/C

BDW94C

Abstract: BDW93 BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , ) BDW94A BDW94B VCBO BDW94C Collector-emitter voltage (IB = 0) BDW94B UNIT -45 -60 -80 V -100 BDW94 BDW94A VALUE -45 VCEO BDW94C -60 -80 V -100 V EBO -5 , BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 1997 , MIN BDW94 -60 BDW94B MAX -80 BDW94A -1 cut-off current V CB = -80 V IB = 0
Power Innovations
Original
Abstract: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS G Designed for Complementary Use , voltage (IE = 0) BDW94A BDW94B VALUE -45 V CBO -60 -80 BDW94C V -100 BDW94 Collector-emitter voltage (IB = 0) UNIT -45 BDW94A BDW94B VCEO -60 -80 V -100 BDW94C VEBO , , BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BDW94 BDW94A -80 -100 IB = -
Original

BDW93

Abstract: BDW93A BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , 0) UNIT -45 BDW94 BDW94A VALUE -45 BDW94A BDW94B VCEO -60 -80 V , , BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , BDW94A -80 IB = 0 VCB = -40 V ICEO IB = 0 BDW94 -1 Collector-emitter VCB = -60 V IB = 0 BDW94A -1 cut-off current VCB = -80 V IB = 0 BDW94B -1 V VCB = -80
Bourns
Original

BDW93

Abstract: BDW93A I RAM SYS ELECTRONICS ^^ LIMITED BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS , temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (lE = 0) BDW94 BDW94A BDW94B BDW94C VCBO -45 -60 -80 -100 V Collector-emitter voltage (lB = 0) BDW94 BDW94A BDW94B BDW94C VCEO , at the rate of 16 mW/°C. BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS electrical , ) BDW94A BDW94B BDW94C -60 -80 -100 V VCB = -40 V lB = 0 BDW94 -1 'ceo Collector-emitter cut-off
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OCR Scan
T0220

BOW94C

Abstract: BDW948 BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS Copyright C 1987, Power Innovations , ) RATING BDW94 CoHector-base voltage (% = 0) BDW94A BDW94B BDW94C BDW94 CoBector-emitter voltage (lB = 0 , include testing of aB parameters. INNOVATIONS 3-87 BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER , BDW94C BDW94 B0W94A BDW94B BDW94C BDW04 BDW94A BDW94B BOW94C Tc = 150*C Tc = 15QC C Tc = 150°G Tc = 150°C BDW94 BDW94A BDW94B BDW94C MIN -45 -60 -80 -100 TYP M AX UNIT breakdown voltage !c =
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OCR Scan
BDW948 BOW94A 8DW94A B0W94B

BDW93

Abstract: BDW94C BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , 0) UNIT -45 BDW94 BDW94A VALUE -45 BDW94A BDW94B VCEO -60 -80 V , , BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , BDW94A -80 IB = 0 VCB = -40 V ICEO IB = 0 BDW94 -1 Collector-emitter VCB = -60 V IB = 0 BDW94A -1 cut-off current VCB = -80 V IB = 0 BDW94B -1 V VCB = -80
Bourns
Original
BDW93C PNP

BDW94C

Abstract: 300f 2 3a Characteristic Symbol Rating Unit Collector Emitter Voltage BDW94 VcBO - 45 V BDW94A - 60 V BDW94B - 80 V BDW94C - 100 V Collector Emitter Voltage BDW94 VcEO - 45 V BDW94A - 60 V BDW94B - 80 V BDW94C , Voltage BDW94 Vceo(sus) lc=- 100mA, lB=0 - 45 V BDW94A - 60 V BDW94B - 80 V BDW94C - 100 V Collector Cutoff Current BDW94 IcBO VCB = - 45V, Ie= 0 - 100 HA BDW94A VCB = - 60V, lE=0 - , Current BDW94 IcEO VCE = - 45V, Ib= 0 -1 mA BDW94A VCE = - 60V, lB=0 -1 mA BDW94B VCE =- 80V, lB
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OCR Scan
300f 2 3a 300f diode bdw93c applications transistor BDW94A

BDW94

Abstract: BDW94C BDW94C -100 BDW94 -45 BDW94A VCEO Collector-emitter voltage -60 Open base V BDW94B Emitter-base voltage IC -80 BDW94C VEBO UNIT -45 BDW94A VCBO VALUE , sustaining voltage MIN TYP. MAX UNIT -45 BDW94A -60 IC=0.1A, IB=0 V BDW94B -80 , cut-off current BDW94B VCB=-80V, IE=0 VCB=-100V, IE=0 VCE=-45V, IB=0 BDW94A VCE=-60V, IB , BDW94A BDW94C ICBO VCB=-45V, IE=0 VCE=-100V, IB=0 IEBO Emitter cut-off current VEB
-
Original
BDW93/A/B/C
Abstract: BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , all parameters. BDW94, BDW94A, BDW94B, BDW94C PNP SILICON POWER DARLINGTONS SEPTEM BER 1993 - , UNIT breakdown voltage Iq = -100 mA lB = 0 (see Note 3) BDW94A BDW94B BDW94C V V C B = -40 V -60 V -80 V -80 V -45 V -60 V -80 V lB = 0 O O O C D II BDW94 BDW94A BDW94B BDW94C BDW94 BDW94A BDW94B BDW94C T c = 150°C T c = 150°C T c = 150°C T c = 150°C BDW94 BDW94A BDW94B -
OCR Scan
T0-220

BDW94C

Abstract: BDW94 Emitter-base voltage IC -80 BDW94C VEBO UNIT -45 BDW94C BDW94A VCEO OND EMIC GE S BDW94A VCBO CONDITIONS -100 Open collector -5 V Collector current-DC -12 , BDW94A -60 IC=-0.1A, IB=0 V BDW94B -80 BDW94C -100 VCEsat-1 Collector-emitter , Collector cut-off current VCB=-45V, IE=0 BDW94A VCB=-60V, IE=0 BDW94B VCB=-80V, IE , =-45V, IB=0 BDW94A VCE=-60V, IB=0 BDW94B VCE=-80V, IB=0 BDW94C ICEO mA OND IC
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Original

BDW94

Abstract: Collector-Base Voltage : BDW94 : BDW94A : BDW94B : BDW94C VCEO Collector-Emitter Voltage : BDW94 : BDW94A , : BDW94 : BDW94A : BDW94B : BDW94C Collector Cut-off Current : BDW94 : BDW94A : BDW94B : BDW94C ICEO Collector Cut-off Current : BDW94 : BDW94A : BDW94B : BDW94C IEBO hFE Emitter Cut-off Current * DC Current
Fairchild Semiconductor
Original

BDW94

Abstract: BDW94C ) = 45 V (Min) - BDW93.BDW94 = 60 V (Min) - BDW93A, BDW94A = 80 V (Min) - BDW93B.BDW94B = 100 V(Min , * Monolithic Construction with Built-in Base-Emitter Shunt Resistor NPN PNP BDW93 BDW94 BDW93A BDW94A , Symbol BDW93 BDW94 BDW93A BDW94A BDW93B BDW94B BDW93C BDW94C Unit Collector-Emitter Voltage VcEO 45 60 , Sustaining Voltage(1) BDW93, BDW94 (l_= 100 mA, lB= 0) BDW93A, BDW94A BDW93B, BDW94B BDW93C, BDW94C ^CEO(sus , ) BDW93A, BDW94A (V = 80 V, I = 0 ) BDW93B, BDW94B ( VCB= 80 V, lâ'ž= 0 ) BDW93C, BDW94C 'ceo 1.0 1.0 1.0
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OCR Scan

transistor BDW94C

Abstract: BDW94 BDW94/A/B/C POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS PNP EPITAXIAL SILICON TRANSISTOR . Complement to BDW93.BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage BDW94 BDW94A BDW94B Collector Emitter Voltage BDW94C BDW94 BDW94A BDW94B , CHARACTERISTICS (Tc=25 C) Characteristic Collector Emitter Sustaining Voltage BDW94 BDW94A BDW94B Collector Cutoff Current BDW94C BDW94 BDW94A BDW94B Collector Cutoff Current BDW94C BDW94 BDW94A BDW94B BDW94C
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OCR Scan
transistor BDW94C
Abstract: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS · Complement to BDW93, BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Emitter Voltage BDW94 BDW94A BDW94B BDW94C Collector Emitter Voltage BDW94 BDW94A BDW94B , BDW94A BDW94B BDW94C V ceo(s u s ) Collector Cutoff Current BDW94 BDW94A BDW94B BDW94C - 100 - 100 - 100 - 100 -1 -1 -1 - pA liA [lA ma =0 Collector Cutoff Current BDW94 BDW94A -
OCR Scan
Abstract: , BDW94A, BDW94B and BDW94C respectively. INTERNAL SCH EM ATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS V a , Operating Areas (for BDW93, BDW93A, BDW94, BDW94A). Safe Operating Areas (for BDW93B, BDW93C, BDW94B -
OCR Scan
93/A/B/C-BDW 94/A/B/C 7T2T237
Abstract: BDW94A Transistors PNP Darlington Transistor Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)12 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.20k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)3.0 f(T) Min. (Hz) Transition Freq20M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test American Microsemiconductor
Original

BDX53B

Abstract: TRANSISTORS 2.2.3 TO-220 Type Transistors Device Type (A) 2 00 60 80 100 4 5 275 60 80 100 NPN T IP I10 TIP111 TIP112 KSD5018 TIP120 TIP121 TIP122 KSD560 6 45 60 80 100 8 45 60 60 80 80 100 100 150 200 10 45 60 80 80 100 100 12 45 60 80 100 BDW23 BDW23C BDW23B BDW23C 6DX53 BDX53A TIP100 BDX53B TIP101 BDX53C TIP102 BU807 BU806 BDX33 BDX33A BDX33B TIP141T BDX33C TIP142T BDW93 BDW93A BDW93B BDW93C BDX34 BDX34A BDX34B TIP146T BDX34C TIP147T BDW94 BDW94A BDW94B BDW94C 3 3 3 4 3 4 3 3 3 3 4 4 3 5 3 5 5
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OCR Scan
TIP125 TIP126 TIP127 KSB601 BDW24 BDW24C

94B DIODE

Abstract: BDw 32 r Z 7 SGS-THOMSON " 7# BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BD W 93Band BDW 93C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intended for use in power linear and switching applications. The com plementary PNP types are the BDW94, BDW94A, BDW94B and BDW 94C respectively. INTERNAL SCHEM ATIC DIAGRAM NPN PNP RiTyp. 10 K ii Typ. 150 £1 RiTyp. 10 k£2 FteTyp. 150 Î2
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OCR Scan
94B DIODE BDw 32 w94C
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