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BDW93C Datasheet

Part Manufacturer Description PDF Type
BDW93C Bourns NPN SILICON POWER DARLINGTONS Original
BDW93C Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BDW93C Power Innovations NPN SILICON POWER DARLINGTONS Original
BDW93C STMicroelectronics complementary darlington power transistor Original
BDW93C STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Original
BDW93C Various Russian Datasheets Transistor Original
BDW93C Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan
BDW93C Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
BDW93C Mospec POWER TRANSISTORS(12A,45-100V,80W) Scan
BDW93C Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDW93C N/A Shortform Transistor PDF Datasheet Scan
BDW93C N/A Cross Reference Datasheet Scan
BDW93C N/A Cross Reference Datasheet Scan
BDW93C N/A Semiconductor Master Cross Reference Guide Scan
BDW93C N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDW93C N/A Shortform Transistor Datasheet Guide Scan
BDW93C N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDW93C N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDW93C SGS-Ates Shortform Data Book 1977/78 Scan
BDW93C STMicroelectronics Shortform Data Book 1988 Scan
Showing first 20 results.

BDW93C

Catalog Datasheet MFG & Type PDF Document Tags

BDW93C

Abstract: BDW94C BDW93C BDW94B/BDW94C ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS I I I , DIODE APPLICATIONS I LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 1 DESCRIPTION The BDW93C , PNP Unit BDW93C BDW94B BDW94C V CBO Collector-Base Voltage (I E = 0) 80 100 V , . October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj-case Thermal Resistance Junction-case , for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C V CB = 80 V VCB = 100 V
STMicroelectronics
Original
bdw93c applications BDW93C/BDW94B/BDW94C P011C
Abstract: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary , BDW93B VALUE 45 V CBO 60 80 BDW93C 45 BDW93A BDW93B V CEO BDW93C Emitter-base , Specifications are subject to change without notice. 1 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER , IE = 0 BDW93C 0.1 current VCB = 45 V IE = 0 TC = 150°C BDW93 5 IE = 0 , IE = 0 VCB = 80 V VBE(sat) IE = 0 IE = 0 TC = 150°C BDW93C 5 VEB = 5V Bourns
Original
BDW94 BDW94A TCS130AE TCS130AG TCS130AI TIS130AA

BDW930

Abstract: Bow93c (unless otherwise noted) RATING SY M B O L BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C VCBO , not necessarily indude testing of aH parameters. P 3-83 BDW93, BDW93A, BDW93B, BDW93C NPN , Coltectof-emitter breakdown voltage lc = 100 mA lB = 0 (see Note 3) BDW93 8DW93A 8DW938 BDW93C BÛW93 SDW93A 80W 93B BDW93C 8DW93 BDW93A B0W93B BDW93C 45 60 80 100 1 1 1 1 0.1 0.1 0.1 0.1 5 5 5 5 2 1000 , BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEM BER 1993 - REVISED M ARCH 1997
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OCR Scan
BDW930 Bow93c BUW93 BOW93C TCS13QAI

BDW93C

Abstract: bdw93c applications BDW93C BDW94B/BDW94C ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s , BDW93C is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration mounted , PNP Unit BDW93C BDW94B BDW94C V CBO Collector-Base Voltage (I E = 0) 80 100 V , 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj-case Thermal Resistance Junction-case o , for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C V CB = 80 V VCB = 100 V 100 100
STMicroelectronics
Original
BDW93C TRANSISTOR malaysia bdw93c

BDW93C

Abstract: bdw93c applications BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors , BDW93C PNP BDW94B BDW94C V CBO Collector-Base Voltage (I E = 0) 80 100 V V CEO , BDW93B/BDW93C/BDW94B/BDW94C THERMAL DATA R thj -ca se Thermal Resistance Junction-case o 1.56 , BDW93B/94B for BDW93C/94C o T case = 150 C for BDW93B/94B for BDW93C/94C VCB = 80 V VCB = 100 V
STMicroelectronics
Original
BDW93C PNP BDW93B/BDW93C BDW93B/BDW93C/BDW94B/BDW94C BDW93C/94C

BOW93B

Abstract: INDUSTRIAL EQUIPMENT D E S C R IP T IO N 3 1 The BDW93B, and BDW93C are silicon epitaxial-base NPN , Value BDW93C BDW94C 100 100 12 15 0.2 80 -65 to 150 150 Unit VcBO VCEO lc Collector-Base , negative. 1/4 173 BDW93B/BDW93C/BDW94B/BDW94C TH E R M A L DATA R th j- C i ¡Thermal , Parameter Collector Cut-off Current (I e = 0) Unit UA mA for BDW93B/94B for BDW93C/94C Tease = 1 50 °C for BDW93B/94B for BDW93C/94C for BDW93B/94B for BDW93C/94C V6B = 5 V lc = 100 mA V cb = 8 0 V
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OCR Scan
BOW93B

BDW94B

Abstract: NPN/bow 94c BDW93C BDW94B/BDW94C ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s , DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 DESCRIPTION The BDW93C is a , negative. May 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R t hj-ca se Thermal Resistance , Un it for BDW94B for BDW93C/94C T cas e = 150 oC for BDW94B for BDW93C/94C V CB = 80 V V , BDW93C/94C I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus ) Collector-Emitter
STMicroelectronics
Original
NPN/bow 94c 94B DIODE

BDW93C

Abstract: BDW93 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , = 0) BDW93B V CBO 60 80 BDW93C V 100 BDW93 Collector-emitter voltage (IB = 0) UNIT 45 BDW93 BDW93A VALUE 45 BDW93A BDW93B VCEO 60 80 V 100 BDW93C , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW93, BDW93A, BDW93B, BDW93C , Collector cut-off VCB = 100 V IE = 0 BDW93C 0.1 current VCB = 45 V IE = 0 TC = 150
Bourns
Original

BDW94

Abstract: BDW94C ) - BDW93C,BDW94C * Collector-Emitter Saturation Voltage VcE(tat)= 2.0 V (Max.) @ lc = 5.0 A , BDW93B BDW94B BDW93C BDW94C 12 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS , Symbol BDW93 BDW94 BDW93A BDW94A BDW93B BDW94B BDW93C BDW94C Unit Collector-Emitter Voltage VcEO 45 60 , Sustaining Voltage(1) BDW93, BDW94 (l_= 100 mA, lB= 0) BDW93A, BDW94A BDW93B, BDW94B BDW93C, BDW94C ^CEO(sus , ) BDW93A, BDW94A (V = 80 V, I = 0 ) BDW93B, BDW94B ( VCB= 80 V, lâ'ž= 0 ) BDW93C, BDW94C 'ceo 1.0 1.0 1.0
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OCR Scan

bdw93c

Abstract: BDW94 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , = 0) BDW93B V CBO 60 80 BDW93C V 100 BDW93 Collector-emitter voltage (IB = 0) UNIT 45 BDW93 BDW93A VALUE 45 BDW93A BDW93B VCEO 60 80 V 100 BDW93C , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW93, BDW93A, BDW93B, BDW93C , Collector cut-off VCB = 100 V IE = 0 BDW93C 0.1 current VCB = 45 V IE = 0 TC = 150
Bourns
Original
Abstract: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary , 60 80 BDW93C 45 BDW93A BDW93B V CEO BDW93C Emitter-base voltage V 100 , . 1 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS electrical characteristics at 25 , 60 BDW93B 80 BDW93C Collector-emitter TYP 100 V ICEO IC = 100 mA IB = 0 , ) VCB = 80 V 0.1 BDW93B 0.1 Collector cut-off VCB = 100 V IE = 0 BDW93C 0.1 Bourns
Original

BDW93

Abstract: status/pricing/packaging Product BDW93CTU BDW93C Product status Full Production Full Production Pricing , Parameter Collector-Base Voltage : BDW93 : BDW93A : BDW93B : BDW93C VCEO Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Current (DC) *Collector Current (Pulse) Base Current Collector , : BDW93 : BDW93A : BDW93B : BDW93C Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C ICEO Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C IEBO hFE Emitter Cut-off Current * DC Current
Fairchild Semiconductor
Original
BDW93/A/B/C BDW23 BDW23A BDW23B BDW23C

diode PR 93A

Abstract: bdw93 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , noted) RATING BDW93 Collector-base voltage ( lE = 0) BDW 93A BDW93B BDW93C BDW93 Collector-em itter voltage ( lB = 0) BDW 93A BDW93B BDW93C Em itter-base voltage Continuous collector current Continuous base , , BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEM BER 1993 - REVISED MARCH 1997 electrical , 0 (see Note 3) BDW93A BDW93B BDW93C V V CB= Collector-em itter 'C E O 40 V 60 V 80 V
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OCR Scan
diode PR 93A T0-220

BDW93C

Abstract: BDW93 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , ) BDW93A BDW93B VALUE VCBO 60 80 BDW93C V 100 BDW93 Collector-emitter voltage (IB = 0) UNIT 45 45 BDW93A BDW93B VCEO BDW93C 60 80 V 100 V EBO 5 V , , BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 1997 electrical , IB = 0 BDW93C IE = 0 BDW93 0.1 IE = 0 BDW93A 0.1 IE = 0 BDW93B 0.1
Power Innovations
Original

BDW93

Abstract: bdw93c applications emitter 60 80 BDW93C Collector-emitter voltage 45 BDW93A BDW93B Open base BDW93C , MIN TYP. MAX UNIT 45 BDW93A 60 IC=0.1A, IB=0 V BDW93B 80 BDW93C 100 , =80V, IE=0 VCB=100V, IE=0 VCE=45V, IB=0 BDW93A VCE=60V, IB=0 BDW93B VCE=80V, IB=0 BDW93C ICEO VCB=60V, IE=0 BDW93 Collector cut-off current BDW93A BDW93C ICBO VCB=45V, IE
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Original
BDW94/A/B/C

bdw93c applications

Abstract: BDW93C BDW93C BDW94B/BDW94C ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s , DIODE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 1 DESCRIPTION The BDW93C , Un it BDW93C BDW94B BDW94C V CBO Collector-Base Voltage (IE = 0) 80 100 V V , . October 1999 1/6 BDW93C/BDW94B/BDW94C THERMAL DATA R thj -case Thermal Resistance , . Unit for BDW94B for BDW93C/94C T case = 150 o C for BDW94B for BDW93C/94C V CB = 80 V VCB =
STMicroelectronics
Original

dw94c

Abstract: BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS â  STMicroelectronics , APPLICATIONS . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDW93C is a silicon Epitaxial-Base , current values are negative. O ctober 1999 1/6 BDW93C/B DW94B/B DW94C THERMAL DATA J u n c tio , > > > V CE(sat)* V ce = 10 V 20 2 4 V V BDW93C/B DW94B/B DW94C Safe Operating Area DC , 3 M Collector Emitter Saturation Voltage (PNP types) 3/6 BDW93C/B DW94B/B DW94C
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OCR Scan
BDW93C/B

BDW93

Abstract: BDW93A noted Symbol VCBO Value Units : BDW93 : BDW93A : BDW93B : BDW93C VCEO Parameter 45 60 80 100 V V V V Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C 45 , : BDW93A : BDW93B : BDW93C Test Condition Min. IC = 100mA, IB = 0 Typ. Max. 45 60 80 100 Units V V V V Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C 100 100 100 100 uA uA uA uA : BDW93 : BDW93A : BDW93B : BDW93C ICEO VCB = 45V, IE = 0
Fairchild Semiconductor
Original

bdw93c applications

Abstract: BDW93C VCBO PARAMETER CONDITIONS BDW93 Open emitter BDW93B VCEO HAN INC BDW93C BDW93 , BDW93C VEBO UNIT Open collector 5 V Collector current-DC 12 A ICM Collector , BDW93B 80 BDW93C 100 VCEsat-1 Collector-emitter saturation voltage IC=5A ,IB , =0 BDW93C VCB=100V, IE=0 OND IC SEM GE BDW93 VCE=45V, IB=0 TOR UC BDW93A HAN INC VCE=60V, IB=0 BDW93B VCE=80V, IB=0 BDW93C VCE=100V, IB=0 IEBO Emitter cut-off
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Original
npn DARLINGTON 10A
Abstract: Collector-Base Voltage : BDW93 : BDW93A : BDW93B : BDW93C VCEO Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC , : BDW93 : BDW93A : BDW93B : BDW93C Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C ICEO Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C IEBO hFE Emitter Cut-off Current * DC Current Fairchild Semiconductor
Original

BDW 65 C

Abstract: BDW93C BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s , BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are , types voltage and current values are negative. June 1997 1/6 BDW93B/BDW93C/BDW94B/BDW94C , 20 2 4 V V BDW93B/BDW93C/BDW94B/BDW94C Safe Operating Area DC Current Gain (NPN types , Saturation Voltage (NPN types) Collector Emitter Saturation Voltage (PNP types) 3/6 BDW93B/BDW93C
STMicroelectronics
Original
BDW 65 C Darlington npn
Showing first 20 results.