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Part : BDW93B Supplier : SPC Multicomp Manufacturer : element14 Asia-Pacific Stock : 140 Best Price : $0.51 Price Each : $0.8480
Part : BDW93B Supplier : SPC Multicomp Manufacturer : Farnell element14 Stock : 178 Best Price : £0.5480 Price Each : £1.92
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BDW93B/BDW93C

Catalog Datasheet MFG & Type PDF Document Tags

diode PR 93A

Abstract: bdw93 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , noted) RATING BDW93 Collector-base voltage ( lE = 0) BDW 93A BDW93B BDW93C BDW93 Collector-em itter voltage ( lB = 0) BDW 93A BDW93B BDW93C Em itter-base voltage Continuous collector current Continuous base , , BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEM BER 1993 - REVISED MARCH 1997 electrical , 0 (see Note 3) BDW93A BDW93B BDW93C V V CB= Collector-em itter 'C E O 40 V 60 V 80 V
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diode PR 93A BDW94 BDW94A BDW94B BDW94C T0-220

Bow93c

Abstract: BDW930 (unless otherwise noted) RATING SY M B O L BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C VCBO , not necessarily indude testing of aH parameters. P 3-83 BDW93, BDW93A, BDW93B, BDW93C NPN , BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEM BER 1993 - REVISED M ARCH 1997 , Collector Current - A Figure 3. Power INNOVATIONS 3-85 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON , BDW93, BDW93A, BDW93B, BOW93C NPN SILICON POWER DARLINGTONS Copyright o 1997, Power Innovations
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BDW930 BUW93 8DW93 B0W93B TCS13QAI

BDW93

Abstract: BDW93CTU Parameter Collector-Base Voltage : BDW93 : BDW93A : BDW93B : BDW93C VCEO Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Current (DC) *Collector Current (Pulse) Base Current Collector , : BDW93 : BDW93A : BDW93B : BDW93C Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C ICEO Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C IEBO hFE Emitter Cut-off Current * DC Current , DISSIPATION 80 60 DC 40 1 BDW93 BDW93A BDW93B BDW93C 0.1 1 10 100 1000 20 0 0 25 50
Fairchild Semiconductor
Original
BDW93CTU BDW93/A/B/C BDW23 BDW23A BDW23B BDW23C
Abstract: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary , BDW93B VALUE 45 V CBO 60 80 BDW93C 45 BDW93A BDW93B V CEO BDW93C Emitter-base , Specifications are subject to change without notice. 1 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER , (see Note 3) MAX 60 BDW93B BDW93C V(BR)CEO TYP 45 Emitter cut-off current , , BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION Bourns
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TCS130AE TCS130AG TCS130AI TIS130AA

BDW93C

Abstract: bdw93c applications BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors , BDW93B/BDW93C/BDW94B/BDW94C THERMAL DATA R thj -ca se Thermal Resistance Junction-case o 1.56 , BDW93B/94B for BDW93C/94C o T case = 150 C for BDW93B/94B for BDW93C/94C VCB = 80 V VCB = 100 V , mA mA 2 mA I CEO Collector Cut-off Current (I B = 0) for BDW93B/94B for BDW93C/94C
STMicroelectronics
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bdw93c applications BDW93C PNP malaysia bdw93c BDW93B/BDW93C BDW93B/BDW93C/BDW94B/BDW94C BDW93B/94B BDW93C/94C P011C

bdw93c

Abstract: BDW94 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , = 0) BDW93B V CBO 60 80 BDW93C V 100 BDW93 Collector-emitter voltage (IB = 0) UNIT 45 BDW93 BDW93A VALUE 45 BDW93A BDW93B VCEO 60 80 V 100 BDW93C , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW93, BDW93A, BDW93B, BDW93C , breakdown voltage (see Note 3) MAX 60 BDW93B BDW93C V(BR)CEO TYP 45 Emitter cut-off
Bourns
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BDW93C

Abstract: BDW93 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , ) BDW93A BDW93B VALUE VCBO 60 80 BDW93C V 100 BDW93 Collector-emitter voltage (IB = 0) UNIT 45 45 BDW93A BDW93B VCEO BDW93C 60 80 V 100 V EBO 5 V , , BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 1997 electrical , IB = 0 BDW93C IE = 0 BDW93 0.1 IE = 0 BDW93A 0.1 IE = 0 BDW93B 0.1
Power Innovations
Original

BDW 65 C

Abstract: BDW93C BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s , types voltage and current values are negative. June 1997 1/6 BDW93B/BDW93C/BDW94B/BDW94C , 20 2 4 V V BDW93B/BDW93C/BDW94B/BDW94C Safe Operating Area DC Current Gain (NPN types , Saturation Voltage (NPN types) Collector Emitter Saturation Voltage (PNP types) 3/6 BDW93B/BDW93C , Transconductance (PNP types) 4/6 BDW93B/BDW93C/BDW94B/BDW94C TO-220 MECHANICAL DATA mm DIM. MIN
STMicroelectronics
Original
BDW 65 C 94B DIODE Darlington npn

BDW93C

Abstract: BDW93 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , = 0) BDW93B V CBO 60 80 BDW93C V 100 BDW93 Collector-emitter voltage (IB = 0) UNIT 45 BDW93 BDW93A VALUE 45 BDW93A BDW93B VCEO 60 80 V 100 BDW93C , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW93, BDW93A, BDW93B, BDW93C , breakdown voltage (see Note 3) MAX 60 BDW93B BDW93C V(BR)CEO TYP 45 Emitter cut-off
Bourns
Original
Abstract: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary , 60 80 BDW93C 45 BDW93A BDW93B V CEO BDW93C Emitter-base voltage V 100 , . 1 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS electrical characteristics at 25 , 60 BDW93B 80 BDW93C Collector-emitter TYP 100 V ICEO IC = 100 mA IB = 0 , ) VCB = 80 V 0.1 BDW93B 0.1 Collector cut-off VCB = 100 V IE = 0 BDW93C 0.1 Bourns
Original
Abstract: Collector-Base Voltage : BDW93 : BDW93A : BDW93B : BDW93C VCEO Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC , : BDW93 : BDW93A : BDW93B : BDW93C Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C ICEO Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C IEBO hFE Emitter Cut-off Current * DC Current Fairchild Semiconductor
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BDW93

Abstract: BDW93A noted Symbol VCBO Value Units : BDW93 : BDW93A : BDW93B : BDW93C VCEO Parameter 45 60 80 100 V V V V Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C 45 , : BDW93A : BDW93B : BDW93C Test Condition Min. IC = 100mA, IB = 0 Typ. Max. 45 60 80 100 Units V V V V Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C 100 100 100 100 µA µA µA µA : BDW93 : BDW93A : BDW93B : BDW93C ICEO VCB = 45V, IE = 0
Fairchild Semiconductor
Original
Abstract: RATINGS C haracteristic Collector Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Current (DC) Collector Current (Pulse) Base Current , : BDW93A : BDW93B : BDW93C Collector Cutoff Current : BDW93A : BDW93B : BDW93C Collector Cutoff Current : BDW93A : BDW93B : BDW93C Emitter Cutoff Current ` DC Current Gain : BDW93 : BDW93 (Tc=25°C) Symbol -
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BDW93

Abstract: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS · Complement to BDW94, BDW94A, BDW94B and BDW94C respectively TO -220 ABSOLUTE MAXIMUM RATINGS 4 Ï ' Characteristic C o lle cto r Base Voltage BDW93 BDW93A BDW93B BDW93C C ollecto r E m itter Voltage BDW93 BDW93A BDW93B BDW93C C o lle c to r Current (DC) C ollecto r Current (Pulse , BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C Symbol VcEo(S US ) Test
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BOW93B

Abstract: INDUSTRIAL EQUIPMENT D E S C R IP T IO N 3 1 The BDW93B, and BDW93C are silicon epitaxial-base NPN , negative. 1/4 173 BDW93B/BDW93C/BDW94B/BDW94C TH E R M A L DATA R th j- C i ¡Thermal , Parameter Collector Cut-off Current (I e = 0) Unit UA mA for BDW93B/94B for BDW93C/94C Tease = 1 50 °C for BDW93B/94B for BDW93C/94C for BDW93B/94B for BDW93C/94C V6B = 5 V lc = 100 mA V cb = 8 0 V , - ¡¡jjj SCS-THOMSON _ _ »cwMJKrrsewres Kmmm 174 BDW93B/BDW93C/BDW94B/BDW94C Safe
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BOW93B

BDW94

Abstract: BDW93C 80V (Minimum) - BDW93B, BDW94B = 100V (Minimum) - BDW93C, BDW94C · Collector-Emitter saturation , 2.48 2.98 3. Emitter O 3.70 PNP BDW94B BDW94C 3.66 G NPN BDW93B BDW93C , Darlington Transistors MAXIMUM RATINGS Characteristic Symbol BDW93B BDW93C BDW94B BDW94C , Voltage (1) (IC = 100mA, IB = 0) BDW93B, BDW94B BDW93C, BDW94C Collector Cut off Current (VCE = 80V, IB = 0) BDW93B, BDW94B BDW93C, BDW94C (VCE = 80V, IB = 0) Collector Base Cut off Current (VCB
Multicomp
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bdw93c applications

Abstract: BDW93C VCBO PARAMETER CONDITIONS BDW93 Open emitter BDW93B VCEO HAN INC BDW93C BDW93 , BDW93B 80 BDW93C 100 VCEsat-1 Collector-emitter saturation voltage IC=5A ,IB , VCE=60V, IB=0 BDW93B VCE=80V, IB=0 BDW93C VCE=100V, IB=0 IEBO Emitter cut-off , VALUE 45 60 V 80 100 45 60 Open base V 80 100 Emitter-base voltage IC BDW93B BDW93C VEBO UNIT Open collector 5 V Collector current-DC 12 A ICM Collector
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npn DARLINGTON 10A BDW94/A/B/C

24ae

Abstract: DW93 SGS-THOMSON R fflD m © IILIO ra© iD O i BDW93B/BDW93C BDW94B/BDW94C COMPLEMENTARY SILICON POWER _ DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BDW93B, and BDW93C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec T0-220 plastic package. They are intented for use in power linear and switching , C H K H K E C irnO U O C S BDW93B/BDW93C/BDW94B/BDW94C TO-220 MECHANICAL DATA mm MIN. A C D
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24ae DW93 W94B dw94 dw94c DW93C/B DW94B/B DW94C

BDW94B

Abstract: BDW93C PNP BDW93B, BDW94B 100V (Minimum) - BDW93C, BDW94C · Collector-emitter saturation voltage-VCE (sat) = 2.0V , Transistors 45 - 100 Volts 80 Watts 3.66 G NPN PNP BDW93B BDW94B BDW93C BDW94C 3.70 3.90 , (1) (IC = 100mA, IB = 0) BDW93B,BDW94B BDW93C,BDW94C VCEO (sus) 80 100 - V Collector Cut off Current (VCE = 80V, IB = 0) BDW93B,BDW94B BDW93C,BDW94C ICEO - 1.0 mA , 750 80 100 TO-220 PNP Page 5 Part Number BDW94B BDW93B BDW93C BDW94C 08/05/06
Multicomp
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Complementary Darlington current Amplifier DARLINGTON 30A 100V npn
Abstract: BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW 93B V c e o (s u s 100mA, lB =0 Collector , Voltage : BDW93 : BDW93A : BDW93B : BDW 93C Collector Current (DC) Collector Current (Pulse) Base Current , 1.3 1.8 2 4 20000 UA uA uA uA mA mA mA mA mA Collector Cutoff Current BDW93C BDW93 BDW93A BDW93B BDW 93C IcEO V ce Vce = Ie b o 100V, Ib = 0 lc = Emitter Cutoff Current *DC -
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BUV48I

Abstract: BU808DXI TIP121 TIP122 BDX53C BDX53BFI BDW94A BDW94B BDW94C BDW94DFI (*) BDW93A BDW93B BDW93C BDW93C , TIP121 TIP122 BDX53C BDX53BFI BDW94B BDW94B BDW94C BDW93B BDW93B BDW93C BDW93C TIP146T
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BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025
Abstract: TRANSISTORS 2.2.3 TO-220 Type Transistors lc (A) 2 VcEO (V) 60 80 100 4 5 275 60 80 100 6 45 60 80 100 8 45 60 60 80 80 100 100 150 200 10 45 60 80 80 100 100 12 45 60 80 100 Device Type NPN TIP110 TIP111 TIP112 KSD5018 TIP120 TIP121 TIP122 KSD560 BDW23 BDW 2ÎC BCW23B BDW23C BDX53 BDX53A TIP 100 BDX53B TIP101 BDX53C TIP 102 BU807 BU806 BDX33 BDX33A BDX33B TIP141T BDX33C TIP14ÎT BDW93 BDW93A BDW93B BDW93C BDX34 BDX34A BDX34B TIP146T BDX34C TIP147T BDW94 BDW94A BDW94B BDW94C 3 3 3 4 3 4 3 3 3 3 4 4 3 5 3 5 5 -
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TIP125 TIP126 TIP127 KSB601 BDW24 BDW24C
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