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BDW93A Datasheet

Part Manufacturer Description PDF Type
BDW93A Bourns NPN SILICON POWER DARLINGTONS Original
BDW93A Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original
BDW93A Power Innovations NPN SILICON POWER DARLINGTONS Original
BDW93A Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY / METAL) Scan
BDW93A Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan
BDW93A Mospec POWER TRANSISTORS(12A,45-100V,80W) Scan
BDW93A Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDW93A N/A Semiconductor Master Cross Reference Guide Scan
BDW93A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDW93A N/A Shortform Transistor Datasheet Guide Scan
BDW93A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDW93A N/A Shortform Transistor PDF Datasheet Scan
BDW93A N/A Cross Reference Datasheet Scan
BDW93A SGS-Ates Shortform Data Book 1977/78 Scan
BDW93A_NL Fairchild Semiconductor TRANS DARLINGTON NPN 60V 12A 3 Original
BDW93A-S Bourns NPN DARLINGTON 60V 12A Original

BDW93A

Catalog Datasheet MFG & Type PDF Document Tags

diode PR 93A

Abstract: bdw93 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , , BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEM BER 1993 - REVISED MARCH 1997 electrical , 0 (see Note 3) BDW93A BDW93B BDW93C V V CB= Collector-em itter 'C E O 40 V 60 V 80 V 80 V 45 V 60 V 80 V lB = 0 O O O CD BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C T c = 150°C T c = 150°C T c = 150°C T c = 150°C BDW93 BDW93A BDW93B BDW93C 1 1 1 1 0.1 0.1 0.1 0.1 5
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diode PR 93A BDW94 BDW94A BDW94B BDW94C T0-220

bdw93c

Abstract: BDW94 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ) UNIT 45 BDW93 BDW93A VALUE 45 BDW93A BDW93B VCEO 60 80 V 100 BDW93C , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW93, BDW93A, BDW93B, BDW93C , noted) PARAMETER TEST CONDITIONS MIN BDW93 Collector-emitter BDW93A 80 IB = 0 VCB = 40 V ICEO IB = 0 BDW93 1 Collector-emitter VCB = 60 V IB = 0 BDW93A 1
Bourns
Original
TCS130AE TCS130AG TCS130AI TIS130AA
Abstract: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary , (unless otherwise noted) RATING SYMBOL BDW93 Collector-base voltage (IE = 0) BDW93A V CBO 60 80 BDW93C 45 BDW93A BDW93B V CEO BDW93C Emitter-base voltage V 100 , . 1 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BDW93 BDW93A MAX Bourns
Original
Abstract: BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary , temperature (unless otherwise noted) RATING SYMBOL BDW93 Collector-base voltage (IE = 0) BDW93A BDW93B VALUE 45 V CBO 60 80 BDW93C 45 BDW93A BDW93B V CEO BDW93C Emitter-base , Specifications are subject to change without notice. 1 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER , CONDITIONS MIN BDW93 Collector-emitter BDW93A 80 IB = 0 VCB = 40 V ICEO IB = 0 Bourns
Original

BDW93C

Abstract: BDW93 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , ) BDW93A BDW93B VALUE VCBO 60 80 BDW93C V 100 BDW93 Collector-emitter voltage (IB = 0) UNIT 45 45 BDW93A BDW93B VCEO BDW93C 60 80 V 100 V EBO 5 V , , BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEMBER 1993 - REVISED MARCH 1997 electrical , 60 BDW93B MAX 80 BDW93A 1 cut-off current V CB = 80 V IB = 0 BDW93B 1
Power Innovations
Original

Bow93c

Abstract: BDW930 BDW93, BDW93A, BDW93B, BOW93C NPN SILICON POWER DARLINGTONS Copyright o 1997, Power Innovations , (unless otherwise noted) RATING SY M B O L BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C VCBO , not necessarily indude testing of aH parameters. P 3-83 BDW93, BDW93A, BDW93B, BDW93C NPN , SDW93A 80W 93B BDW93C 8DW93 BDW93A B0W93B BDW93C 45 60 80 100 1 1 1 1 0.1 0.1 0.1 0.1 5 5 5 5 2 1000 , BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS SEPTEM BER 1993 - REVISED M ARCH 1997
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BDW930 BUW93 TCS13QAI

BDW94

Abstract: BDW94C ) = 45 V (Min) - BDW93.BDW94 = 60 V (Min) - BDW93A, BDW94A = 80 V (Min) - BDW93B.BDW94B = 100 V(Min , * Monolithic Construction with Built-in Base-Emitter Shunt Resistor NPN PNP BDW93 BDW94 BDW93A BDW94A , Symbol BDW93 BDW94 BDW93A BDW94A BDW93B BDW94B BDW93C BDW94C Unit Collector-Emitter Voltage VcEO 45 60 , Sustaining Voltage(1) BDW93, BDW94 (l_= 100 mA, lB= 0) BDW93A, BDW94A BDW93B, BDW94B BDW93C, BDW94C ^CEO(sus , ) BDW93A, BDW94A (V = 80 V, I = 0 ) BDW93B, BDW94B ( VCB= 80 V, lâ'ž= 0 ) BDW93C, BDW94C 'ceo 1.0 1.0 1.0
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bdw93c applications

BDW93

Abstract: BDW93CTU Parameter Collector-Base Voltage : BDW93 : BDW93A : BDW93B : BDW93C VCEO Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Current (DC) *Collector Current (Pulse) Base Current Collector , : BDW93 : BDW93A : BDW93B : BDW93C Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C ICEO Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C IEBO hFE Emitter Cut-off Current * DC Current , DISSIPATION 80 60 DC 40 1 BDW93 BDW93A BDW93B BDW93C 0.1 1 10 100 1000 20 0 0 25 50
Fairchild Semiconductor
Original
BDW93/A/B/C BDW23 BDW23A BDW23B BDW23C

BDW93C

Abstract: BDW93 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ) UNIT 45 BDW93 BDW93A VALUE 45 BDW93A BDW93B VCEO 60 80 V 100 BDW93C , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW93, BDW93A, BDW93B, BDW93C , noted) PARAMETER TEST CONDITIONS MIN BDW93 Collector-emitter BDW93A 80 IB = 0 VCB = 40 V ICEO IB = 0 BDW93 1 Collector-emitter VCB = 60 V IB = 0 BDW93A 1
Bourns
Original

BDW93

Abstract: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS · Complement to BDW94, BDW94A, BDW94B and BDW94C respectively TO -220 ABSOLUTE MAXIMUM RATINGS 4 Ï ' Characteristic C o lle cto r Base Voltage BDW93 BDW93A BDW93B BDW93C C ollecto r E m itter Voltage BDW93 BDW93A BDW93B BDW93C C o lle c to r Current (DC) C ollecto r Current (Pulse , BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW93B BDW93C Symbol VcEo(S US ) Test
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bdw93c applications

Abstract: BDW93C BDW93A Collector-emitter voltage DUC ICON BDW93A SEM GE Collector-base voltage TOR , ) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 45 BDW93A 60 IC=0.1A, IB=0 V , Collector cut-off current VCB=45V, IE=0 BDW93A VCB=60V, IE=0 BDW93B VCB=80V, IE=0 BDW93C VCB=100V, IE=0 OND IC SEM GE BDW93 VCE=45V, IB=0 TOR UC BDW93A HAN INC
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Original
npn DARLINGTON 10A BDW94/A/B/C
Abstract: Collector-Base Voltage : BDW93 : BDW93A : BDW93B : BDW93C VCEO Collector-Emitter Voltage : BDW93 : BDW93A , : BDW93 : BDW93A : BDW93B : BDW93C Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C ICEO Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C IEBO hFE Emitter Cut-off Current * DC Current Fairchild Semiconductor
Original

BDW93C

Abstract: BDW93 RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage: BDW93 VcbO 45 V : BDW93A 60 V : BDW93B 80 V : BDW93C 100 V Collector Emitter Voltage: BDW93 VcEO 45 V : BDW93A 60 V : BDW93B 80 V , ) lc= 100mA, lB=0 45 V : BDW93A 60 V : BDW93B 80 V : BDW93C 100 V Collector Cutoff Current : BDW93 IcBO VCB = 45V, Ie= 0 100 HA : BDW93A VCB = 60V, lE=0 100 HA : BDW93B VCB = 80V , , IB= 0 1 mA : BDW93A VCE = 60V, lB=0 1 mA : BDW93B VCE = 80V, IB=0 1 mA : BDW93C VCE =
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NPN Transistor TO220 VCEO 80V 100V BDW93C TRANSISTOR 100MA 45 V NPN NPN Transistor VCEO 80V 100V DC Current gain 100 LF 5A

BDW93

Abstract: bdw93c applications PARAMETER CONDITIONS BDW93 VCBO Collector-base voltage BDW93A BDW93B VALUE 45 Open emitter 60 80 BDW93C Collector-emitter voltage 45 BDW93A BDW93B Open base BDW93C , MIN TYP. MAX UNIT 45 BDW93A 60 IC=0.1A, IB=0 V BDW93B 80 BDW93C 100 , =80V, IE=0 VCB=100V, IE=0 VCE=45V, IB=0 BDW93A VCE=60V, IB=0 BDW93B VCE=80V, IB=0 BDW93C ICEO VCB=60V, IE=0 BDW93 Collector cut-off current BDW93A BDW93C ICBO VCB=45V, IE
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Original

BDW93

Abstract: BDW93A noted Symbol VCBO Value Units : BDW93 : BDW93A : BDW93B : BDW93C VCEO Parameter 45 60 80 100 V V V V Collector-Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C 45 , : BDW93A : BDW93B : BDW93C Test Condition Min. IC = 100mA, IB = 0 Typ. Max. 45 60 80 100 Units V V V V Collector Cut-off Current : BDW93 : BDW93A : BDW93B : BDW93C 100 100 100 100 µA µA µA µA : BDW93 : BDW93A : BDW93B : BDW93C ICEO VCB = 45V, IE = 0
Fairchild Semiconductor
Original
Abstract: RATINGS C haracteristic Collector Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Emitter Voltage : BDW93 : BDW93A : BDW93B : BDW93C Collector Current (DC) Collector Current (Pulse) Base Current , : BDW93A : BDW93B : BDW93C Collector Cutoff Current : BDW93A : BDW93B : BDW93C Collector Cutoff Current : BDW93A : BDW93B : BDW93C Emitter Cutoff Current ` DC Current Gain : BDW93 : BDW93 (Tc=25°C) Symbol -
OCR Scan
Abstract: Voltage : BDW93 : BDW93A : BDW93B : BDW 93C Collector Current (DC) Collector Current (Pulse) Base Current , BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW 93B V c e o (s u s 100mA, lB =0 Collector , 1.3 1.8 2 4 20000 UA uA uA uA mA mA mA mA mA Collector Cutoff Current BDW93C BDW93 BDW93A -
OCR Scan
Abstract: r Z 7 SG S-TH O M SO N ^ 7 # &W^@lLl(§ir[RMO(gS BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BDW93Band BDW93C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intended for use in power linear and switch ing applications. The com­ plementary PNP types are the BDW94 , Operating Areas (for BDW93, BDW93A, BDW94, BDW94A). Safe Operating Areas (for BDW93B, BDW93C, BDW94B -
OCR Scan
93/A/B/C-BDW 94/A/B/C 7T2T237
Abstract: BDW93A Transistors NPN Darlington Transistor Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)12 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.20k @I(C) (A) (Test Condition)5.0 @V(CE) (V) (Test Condition)3.0 f(T) Min. (Hz) Transition Freq20M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test American Microsemiconductor
Original

BDW94C

Abstract: 300f 2 3a BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS â'¢ Complement to BDW93, BDW93A, BDW93B and BDW93C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage BDW94 VcBO - 45 V BDW94A - 60 V BDW94B - 80 V BDW94C - 100 V Collector Emitter Voltage BDW94 VcEO - 45 V BDW94A - 60 V BDW94B - 80 V BDW94C - 100 V Collector Current (DC) lc - 12 A Collector Current (Pulse) lc - 15 A Base Current Ib -
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300f 2 3a 300f diode transistor BDW94A

93c100

Abstract: BDW93A Collector-emitter voltage DUC ICON BDW93A SEM GE Collector-base voltage TOR , ) Collector-emitter sustaining voltage MIN TYP. MAX UNIT 45 BDW93A 60 IC=0.1A, IB=0 V , Collector cut-off current VCB=45V, IE=0 BDW93A VCB=60V, IE=0 BDW93B VCB=80V, IE=0 BDW93C VCB=100V, IE=0 OND IC SEM GE BDW93 VCE=45V, IB=0 TOR UC BDW93A HAN INC
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93c100

W93B

Abstract: darlington bd Voltage : BDW93 : BDW93A : BDW93B : BDW 93C Collector Current (DC) Collector Current (Pulse) Base Current , BDW93 BDW93A BDW93B BDW93C BDW93 BDW93A BDW 93B V c e o (s u s 100mA, lB =0 Collector , 1.3 1.8 2 4 20000 UA uA uA uA mA mA mA mA mA Collector Cutoff Current BDW93C BDW93 BDW93A
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W93B darlington bd W9394 93B/94
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