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BDW83B Datasheet

Part Manufacturer Description PDF Type
BDW83B Bourns NPN SILICON POWER DARLINGTONS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original
BDW83B Central Semiconductor Leaded Power Transistor Darlington Original
BDW83B Power Innovations NPN SILICON POWER DARLINGTON Original
BDW83B Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original
BDW83B Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDW83B N/A Shortform Transistor PDF Datasheet Scan
BDW83B N/A Shortform Transistor PDF Datasheet Scan
BDW83B N/A Transistor Replacements Scan
BDW83B N/A Cross Reference Datasheet Scan
BDW83B N/A Semiconductor Master Cross Reference Guide Scan
BDW83B N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDW83B N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDW83B Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan
BDW83B-S Bourns Transistors (BJT) - Single, Discrete Semiconductor Products, NPN DARLINGTON 80V 15A Original
BDW83B-S Bourns NPN DARLINGTON 80V 15A Original

BDW83B

Catalog Datasheet MFG & Type PDF Document Tags

BDW83

Abstract: BDW83A BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power , at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW83 BDW83B 60 VCBO 80 , ) UNIT 45 BDW83A Collector-base voltage (IE = 0) VALUE BDW83B 60 VCEO BDW83C 80 , not necessarily include testing of all parameters. 1 BDW83, BDW83A, BDW83B, BDW83C, BDW83D , 120 V VCE = 30 V IB = 0 BDW83B 1 V CE = 50 V IB = 0 BDW83C 1 IB = 0
Power Innovations
Original
BDW84 BDW84A BDW84B BDW84C BDW84D

bdw83

Abstract: BDW83C BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS G Designed for , ) RATING BDW83 BDW83A Collector-base voltage (IE = 0) BDW83B BDW83C BDW83D BDW83 BDW83A Collector-emitter voltage (IB = 0) (see Note 1) BDW83B BDW83C BDW83D Emitter-base voltage Continuous collector current , , BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case , voltage BDW83A IC = 30 mA IB = 0 (see Note 5) BDW83B BDW83C BDW83D VCE = 30 V ICEO Collector-emitter
Bourns
Original

BDW83

Abstract: BDW83A BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Designed for , absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW83B V CBO 80 BDW83C 120 BDW83 45 60 BDW83A BDW83B VCEO 80 V 100 BDW83C , Specifications are subject to change without notice. 1 BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON , current IB = 0 BDW83 1 VCE = 30 V IB = 0 BDW83A 1 VCE = 40 V IB = 0 BDW83B
Bourns
Original
SAS140AB TIS140AB

BDW83

Abstract: BDW83C BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Designed for , absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW83B V CBO 80 BDW83C 120 BDW83 45 60 BDW83A BDW83B VCEO 80 V 100 BDW83C , Specifications are subject to change without notice. 1 BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON , current IB = 0 BDW83 1 VCE = 30 V IB = 0 BDW83A 1 VCE = 40 V IB = 0 BDW83B
Bourns
Original
TCS140AH TCS140AI

TRANSISTOR Bdw83d

Abstract: BDW83B BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS G Designed for , absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW83 BDW83B 60 VCBO 80 BDW83C 120 BDW83 45 BDW83A BDW83B 60 VCEO BDW83C 80 V , are subject to change without notice. 1 BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON , = 0 BDW83 1 VCE = 30 V IB = 0 BDW83A 1 VCE = 40 V IB = 0 BDW83B 1
Bourns
Original
TRANSISTOR Bdw83d SOT93 package

bdw83

Abstract: TRANSISTOR Bdw83d BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS G Designed for , °C case temperature (unless otherwise noted) RATING BDW83 Collector-base voltage (IE = 0) BDW83A BDW83B , BDW83D BDW83 BDW83A BDW83B VCEO BDW83C BDW83D VEBO IC IB Ptot Ptot Tj ½LIC2 Tstg TA These values apply , JUNE 2011 Specifications are subject to change without notice. BDW83, BDW83A, BDW83B, BDW83C , 30 mA IB = 0 (see Note 5) BDW83B BDW83C BDW83D VCE = 30 V ICEO Collector-emitter cut-off current VCE
Bourns
Original

BOW83

Abstract: BOW83C BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Copyright O 1997, Power , BDW83A Collector-base voltage {fE = 0} BDW83B BOW83C BDW83D 8D W 83 BDW83A Collector-emitter voltage Ob = °) (see Note 1) BDW83B BDW83C BDW83D Emitter-base vottage Continuous collector current Continuous , (BR)CEO IH N 45 60 80 100 120 TYP MAX UNIT BDW83A lc = 30 mA lB = 0 (see Note 5} BDW83B BDW83C BDW83D V CE = 30 V « 5= 0 o U breakdown voltage V BDWB3 BDW83A BDW83B BDW83C BDW83D
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OCR Scan
BOW83 D 1878 TRANSISTOR

ED 83A

Abstract: BDW83B BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , ) RATING BDW83 BDW 83A Collector-base voltage ( lE = 0) BDW83B BDW83C BDW83D BDW83 BDW 83A Collector-em itter voltage ( lB = 0) (see Note 1) BDW83B BDW83C BDW83D Em itter-base voltage Continuous collector , all parameters. BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS AUG UST 1978 , BDW 83A Iq = 30 mA lB = 0 (see Note 5) BDW83B BDW83C BDW83D > 30 V 30 V 40 V 50 V 60 V 45 V 60 V 80 V
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OCR Scan
ED 83A

BDW83

Abstract: BDW83C CONDITIONS DUC ICON BDW83 BDW83A Collector-base voltage SEM E BDW83B ANG TOR VALUE , 45 60 BDW83B Open base 80 BDW83C Emitter-base voltage V 100 BDW83D VEBO , Collector-emitter breakdown voltage MAX UNIT 45 BDW83A TYP. 60 BDW83B IC=30mA, IB=0 V , current BDW83B BDW83C BDW83D VCE=30V, IB=0 BDW83A VCE=30V, IB=0 BDW83B VCE=40V, IB
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Original
diode 83C BDW83/83A/83B/83C/83D BDW84/84A/84B/84C/84D

BDW83D

Abstract: BDW83C VALUE BDW83 VCBO Collector-base voltage 45 BDW83A 60 BDW83B Open emitter 80 BDW83C 45 BDW83A Collector-emitter voltage 120 BDW83 60 BDW83B Open base 80 , MAX UNIT 45 BDW83A TYP. 60 BDW83B IC=30mA, IB=0 V 80 BDW83C 100 , VBE BDW83 BDW83A ICBO Collector cut-off current BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B VCE=40V, IB=0 VCE=50V, IB=0 BDW83D Collector cut-off current VCE=30V, IB=0 BDW83C
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Original

bdw83a

Abstract: O M S O N 3 DE IC O B T-33-29 Max. U nit for BDW83A/84A for BDW83B/84B for BDW83C/84C 0.5 0.5 0.5 mA mA mA for BDW83A/84A for BDW83B/84B for BDW83C/84C 5 5 5 mA mA mA for BDW83A/84A for BDW83B/84B for BDW83C/84C 1 1 1 mA mA mA 2 mA T e , Sustaining Voltage lc =30m A for BDW83A/84A for BDW83B/84B for BDW83C/84C VcE(sat
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OCR Scan
BDW84A/B/C BDW83A/B/C BDW83B/84B

SOT93

Abstract: BDW83C BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or
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Original
SOT93

tip142/TIP147 AMPLIFIER CIRCUIT

Abstract: BDV65, BDV64 ) (V) (A) fT (MHz) MAX *TYP MIN BDW83B BDW84B 15 130 80 80 750
Central Semiconductor
Original
BDV65 BDV65A BDV65B TIP33A TIP33B TIP33C tip142/TIP147 AMPLIFIER CIRCUIT BDV65, BDV64 TIP36C to-247 TIP147 tip147 data sheet TIP2955 BDV64B BDV64 BDV64A

BDV65, BDV64

Abstract: tip142 Power Transistors TO-218 Case* (Continued) General Purpose Amplifier type no. â'¢c Pd bvcbo bvceo h fe @ lc @ vCE vce(sa t)@'c h (A) (W) (v) (V) (A) (v) (v) (A) (MHz) "typ npn pnp min min min max max min bdv65 bdv64 12 125 60 60 1,000 â'" 5.0 4.0 2.0 5.0 60* bdv65a bdv64a 12 125 80 80 1,000 â'" 5.0 4.0 2.0 5.0 60* bdv65b bdv64b 12 125 100 100 1,000 â'" 5.0 4.0 2.0 5.0 60* bdw83a bdw84a 15 130 60 60 750 20,000 6.0 3.0 2.5 6.0 . bdw83b bdw84b 15 130 80 80 750 20,000 6.0 3.0
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OCR Scan
tip142 TIP-1 TIP3055 DARLINGTON TRANSISTORS

BDW83B

Abstract: BDW83B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 80V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 15A 7.92 (0.312) 12.70 (0.50) All Semelab
Semelab
Original
Abstract: BDW83B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 80V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can Semelab
Original

TIC106M SCR

Abstract: TIC106D equivalent BDW73C BDW73D TIP130 TIP131 TIP132 BDX33B BDX33C BDX33D TIP142 BDV65C BDW93B BDW93C BDW83B , BDW93C BDW83B BDW83C BDW83D 2 2 2 4 4 4 5 6 6 8 8 8 8 8 8 8 8 8 10 10 10 10 , BDW73D BDW74 BDW74A BDW74B BDW74C BDW74D BDW83 BDW83A BDW83B BDW83C BDW83D BDW84 BDW84A
Bourns
Original
TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP30C BD240C TIPP32C BD242B BD242C TIP32B
Abstract: BDW83B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 80V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can Semelab
Original

tip142/TIP147 AMPLIFIER CIRCUIT

Abstract: tip141 equivalent 2.5 6.0 - BDW83B BDW84B 15 130 80 80 750 20,000 6.0 3.0 2.5
Central Semiconductor
Original
TIP35A TIP35B TIP35C tip141 equivalent TIP35C EQUIVALENT TIP34A TIP34B TIP34C TIP36A

tip142/TIP3055

Abstract: TIP35C TIP36C Power Transistors TO-218 Case* (Continued) General Purpose Amplifier TYPE NO. â'¢c PD bvcbo bvceo h FE @ lc @ vCE VCE(SA T) ® "C h (A) (W) (V) (V) (A) (V) (V) (A) (MHz) "TYP NPN PNP MIN MIN MIN MAX MAX MIN BDV65 BDV64 12 125 60 60 1,000 â'" 5.0 4.0 2.0 5.0 60* BDV65A BDV64A 12 125 80 80 1,000 â'" 5.0 4.0 2.0 5.0 60* BDV65B BDV64B 12 125 100 100 1,000 â'" 5.0 4.0 2.0 5.0 60* BDW83A BDW84A 15 130 60 60 750 20,000 6.0 3.0 2.5 6.0 . BDW83B BDW84B 15 130 80 80 750 20,000 6.0 3.0
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OCR Scan
tip142/TIP3055 TIP35C TIP36C TIP35C TI TIP36B TIP36C TIP140 TIP141 TIP146 TIP3055

w83a

Abstract: BDW73C BDW73D TIP130 TIP131 TIP132 BDX33B BDX33C BDX33D TIP142 BDV65C BDW93B BDW93C BDW83B , BDW93C BDW83B BDW83C BDW83D 2 2 2 4 4 4 5 6 6 8 8 8 8 8 8 8 8 8 10 10 10 10 , BDW73D BDW74 BDW74A BDW74B BDW74C BDW74D BDW83 BDW83A BDW83B BDW83C BDW83D BDW84 BDW84A
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OCR Scan
w83a 83B/84B

TIC106D equivalent

Abstract: TIC106M SCR 3/3 3/3 3/3 3/3 3/3 1M 1M 1M 1M 1M 80 80 80 80 80 BDW83 BDW83A BDW83B BDW83C
Bourns
Original
BD249 EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent TIP32C BD540C BD244B BD244C TIP42B TIP42C

T0220

Abstract: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or
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OCR Scan
T0220 BDW51A BDW51B BDW51C BDW52 BDW52A BDW52B
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