BDW63 BDW63A BDW63B BDW63C BDW63D BDW64 BDW64A BDW64B BDW64C BDW64D TCS120AD

NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDW64, BDW64A, BDW64B, BDW64C and BDW64D 60 W at 25°C Case

BDW63 BDW63, BDW63A BDW63A, BDW63B BDW63B, BDW63C BDW63C, BDW63D BDW63D NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDW64 BDW64, BDW64A BDW64A, BDW64B BDW64B, BDW64C BDW64C and BDW64D BDW64D 60 W at 25°C Case Temperature 6 A Continuous Collector Current Minimum hFE of 750 at 3V, 2 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW63B BDW63B V CBO 80 BDW63C BDW63C 120 BDW63 BDW63 V 100 BDW63D BDW63D 45 60 BDW63A BDW63A Collector-emitter voltage (IB = 0) (see Note 1) UNIT 60 BDW63A BDW63A Collector-base voltage (IE = 0) VALUE 45 BDW63 BDW63 BDW63B BDW63B VCEO 80 V 100 BDW63C BDW63C 120 BDW63D BDW63D VEB 5 Continuous collector current IC 6 A Continuous base current IB 0.1 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 60 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W ½LIC2 50 mJ Emitter-base voltage Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. NOITAMROFNI NOTES: 1. 2. 3. 4. V TCUDORP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW63 BDW63, BDW63A BDW63A, BDW63B BDW63B, BDW63C BDW63C, BDW63D BDW63D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BDW63 BDW63 V(BR)CEO Collector-emitter BDW63A BDW63A IC = 30 mA IB = 0 (see Note 5) MAX 80 BDW63C BDW63C 100 120 V VCE = 30 V ICEO Collector-emitter cut-off current IB = 0 BDW63 BDW63 0.5 VCE = 30 V IB = 0 BDW63A BDW63A 0.5 VCE = 40 V IB = 0 BDW63B BDW63B 0.5 VCE = 50 V IB = 0 BDW63C BDW63C 0.5 VCE = 60 V BDW63B BDW63B 0.2 IE = 0 BDW63C BDW63C 0.2 Collector cut-off VCB = 120 V IE = 0 BDW63D BDW63D 0.2 current VCB = 45 V IE = 0 TC = 150°C BDW63 BDW63 5 IE = 0 TC = 150°C BDW63A BDW63A 5 VCB = 80 V IE = 0 TC = 150°C BDW63B BDW63B 5 VCB = 100 V IE = 0 TC = 150°C BDW63C BDW63C 5 VCB = 120 V VEC 0.2 IE = 0 VCB = 60 V VCE(sat) BDW63A BDW63A VCB = 100 V VBE(on) 0.2 IE = 0 IE = 0 TC = 150°C BDW63D BDW63D 5 VEB = 5V IC = 0 Forward current VCE = 3V IC = 2 A transfer ratio VCE = 3V IC = 6 A VCE = 3V IC = 2 A mA 0.5 BDW63 BDW63 VCB = 80 V hFE BDW63D BDW63D IE = 0 VCB = 60 V IEBO IB = 0 VCB = 45 V ICBO UNIT 60 BDW63B BDW63B BDW63D BDW63D breakdown voltage TYP 45 Emitter cut-off current Base-emitter voltage Collector-emitter IB = 12 mA IC = 2 A saturation voltage IB = 60 mA IC = 6 A Parallel diode forward voltage IE = 6A 2 750 (see Notes 5 and 6) mA mA 20000 100 (see Notes 5 and 6) 2.5 2.5 (see Notes 5 and 6) 4 IB = 0 3.5 V V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN TYP 2.08 °C/W RJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN TYP ton IB(on) = 12 mA IB(off) = -12 mA 1 µs VBE(off) = -4.5 V RL = 10 tp = 20 µs, dc 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. TCUDORP 2 IC = 3 A Turn-off time NOITAMROFNI Turn-on time toff AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW63 BDW63, BDW63A BDW63A, BDW63B BDW63B, BDW63C BDW63C, BDW63D BDW63D NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS120AD TCS120AD 40000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS120AE TCS120AE 2·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 1·5 1·0 0·5 TC = -40°C TC = 25°C TC = 100°C 0 0·5 IC - Collector Current - A 1·0 10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS120AF TCS120AF VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 10 IC - Collector Current - A Figure 3. NOITAMROFNI TCUDORP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDW63 BDW63, BDW63A BDW63A, BDW63B BDW63B, BDW63C BDW63C, BDW63D BDW63D NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS120AC SAS120AC 1·0 BDW63 BDW63 BDW63A BDW63A BDW63B BDW63B BDW63C BDW63C BDW63D BDW63D 0·1 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS120AB TIS120AB Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. NOITAMROFNI TCUDORP 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.