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BDW54A Datasheet

Part Manufacturer Description PDF Type
BDW54A Bourns PNP SILICON POWER DARLINGTONS Original
BDW54A Power Innovations PNP SILICON POWER DARLINGTON Original
BDW54A Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDW54A N/A Semiconductor Master Cross Reference Guide Scan
BDW54A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDW54A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDW54A N/A Shortform Transistor PDF Datasheet Scan
BDW54A Transys Electronics BJT, PNP, Darlington Power Transistor, IC 4A Scan
BDW54A-S Bourns NPN DARLINGTON 100V 4A Original

BDW54A

Catalog Datasheet MFG & Type PDF Document Tags

BDW54

Abstract: BDW54C BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS Copyright © 1997, Power , BDW54C BDW54D V -100 -120 BDW54 -45 BDW54A Collector-emitter voltage (IB = 0) (see Note 1) UNIT -45 BDW54A Collector-base voltage (IE = 0) VALUE BDW54B -60 VCEO , processing does not necessarily include testing of all parameters. 1 BDW54, BDW54A, BDW54B, BDW54C , Collector-emitter BDW54A IC = -30 mA IB = 0 (see Note 5) breakdown voltage MAX -80 BDW54C
Power Innovations
Original
BDW53 BDW53A BDW53B BDW53C BDW53D

BDW54

Abstract: BDW53 BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS Designed for , CBO -80 BDW54C -120 BDW54 V -100 BDW54D -45 -60 BDW54A Collector-emitter voltage (IB = 0) (see Note 1) UNIT -60 BDW54A Collector-base voltage (IE = 0) VALUE -45 , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW54, BDW54A, BDW54B, BDW54C , otherwise noted) PARAMETER TEST CONDITIONS MIN BDW54 V(BR)CEO Collector-emitter BDW54A IC
Bourns
Original
Abstract: BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS ● Designed for , BDW54C BDW54D -120 -45 -60 BDW54A BDW54B V CEO -80 V -100 BDW54C -120 , ) UNIT -60 BDW54A Collector-base voltage (IE = 0) VALUE -45 BDW54 VEBO -5 , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW54, BDW54A, BDW54B, BDW54C , otherwise noted) PARAMETER TEST CONDITIONS MIN BDW54 V(BR)CEO Collector-emitter BDW54A IC Bourns
Original
TCS115AB TCS115AC SAS115AC TIS110AB
Abstract: BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS ● Designed for , °C case temperature (unless otherwise noted) RATING SYMBOL BDW54A Collector-base voltage (IE = 0 , BDW54A BDW54B V CEO BDW54C BDW54D Emitter-base voltage V -100 BDW54 , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW54, BDW54A, BDW54B, BDW54C , otherwise noted) PARAMETER TEST CONDITIONS MIN BDW54 Collector-emitter BDW54A breakdown Bourns
Original

BOW54A

Abstract: BDW540 BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARUNGTONS Copyright C 1997, Power , temperature (unless otherwise noted) RATINO BDW54 Collector-base voltage (lE = 0) BDW54A BDW54B 8DW54C BDW54D BDW54 BDW54A Collector-emitter voltage (!B = 0) (see Note 1) BDW54B BDW54C BDW54D Emitter-base vottage , , BDW54A, BOW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS A U G U ST 1978 - REVISED M ARCH 1997 , BDW54A tc = -30 mA iB = o MIN -45 -60 -60 -100 -120 TYP MAX UNIT Cotlector-emltter V(BR
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OCR Scan
BDWS30 BOW54A BDW540 1978-REVISED

BDW53C

Abstract: BDW54 TBANSYS ELECTRONICS ^^ LIMITED BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER , BDW54A -60 Collector-base voltage (lE = 0) BDW54B VCBO -80 V BDW54C -100 BDW54D -120 BDW54 -45 BDW54A -60 Collector-emitter voltage (lB = 0) (see Note 1) BDW54B VCEO -80 V BDW54C -100 , . BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS electrical characteristics at 25 , -45 V(BR)CEO Collector-emitter breakdown voltage "c = 30 mA lB = 0 (see Note 5) BDW54A BDW54B
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OCR Scan
BDW54B- T0220

BDW54

Abstract: BDW53 BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS Designed for , CBO -80 BDW54C -120 BDW54 V -100 BDW54D -45 -60 BDW54A Collector-emitter voltage (IB = 0) (see Note 1) UNIT -60 BDW54A Collector-base voltage (IE = 0) VALUE -45 , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW54, BDW54A, BDW54B, BDW54C , otherwise noted) PARAMETER TEST CONDITIONS MIN BDW54 V(BR)CEO Collector-emitter BDW54A IC
Bourns
Original
Abstract: BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , . Production processing does not necessarily include testing of all parameters. BDW54, BDW54A, BDW54B , transistor parameters. PRODUCT INFORMATION 2 BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON , R O D U C T I N F O R M A T I O N P o W e f INNOVATIONS BDW54, BDW54A, BDW54B , BDW54A; BDW54B BDW54C = BDW54D- 0.01 . -10 -10 -100 -1000 VC E - Collector-Emitter -
OCR Scan
T0-220 DW54D

T0220

Abstract: BDW54 BDW54A BDW54B BDW54C NPN PNP PNP PNP PNP T0220 T0220 T0220 T0220 T0220 100 45
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OCR Scan
BDW51A BDW51B BDW51C BDW52 BDW52A BDW52B

BDW53c

Abstract: BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D ● 40 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 1.5 A TO-220 PACKAGE (TOP VIEW) B This series is obsolete and not recommended for new designs. 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25Â
Bourns
Original
TCS110AB TCS110AC SAS110AC
Abstract: BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D ● 40 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 1.5 A TO-220 PACKAGE (TOP VIEW) B This series is currently available, but not recommended for new designs. 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum Bourns
Original

BDW53

Abstract: BDW54 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D 40 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 3V, 1.5 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW53B V
Bourns
Original

BOW53D

Abstract: 538 NPN transistor BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Copyrffiit© 1997, Power innovations limited, UK AU G U ST 1978 - R E V IS E D M A R C H 1997 Designed for Complementary U se with BDW54, BDW54A, BDW54B, BDW 54C and B D W 540 40 W at 2S°C C ase Temperature b TO-220 P ACKAG E (TOP VIEW) cr 4 A Continuous Collector Current Minimum hra of 750 at 3 V, 1,5 A cc o SYM BOL BDW53 BDW53A VALUE 45 v ceo 60 80 100 120 45 60 VCEO 80 100 120 V6BO 5 4 SO 40 2 25 -6510+1 SO -65 t o
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OCR Scan
BOW53D 538 NPN transistor lb 53b

BDW53

Abstract: BDW53A BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D 40 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 3V, 1.5 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW53B V
Bourns
Original
Abstract: BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Copyright© 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 · Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D 40 W at 25°C Case Temperature B C T0-220 PACKAGE (TOP VIEW) · · · 4 A Continuous Collector Current Minimum hFE of 750 at 3 V, 1.5 A C C Pin 2 is in electrical contact with the mounting base. M D TR A C A absolute maximum ratings at 25°C case -
OCR Scan

BDW54

Abstract: BDW53 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK q AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with BDW54, BDW54A, BDW54B, BDW54C and BDW54D q 40 W at 25°C Case Temperature q 4 A Continuous Collector Current q Minimum hFE of 750 at 3 V, 1.5 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at
Power Innovations
Original

DK53

Abstract: dk52 BDW52B BDW52C BDW53 BDW53A BDW53B BDW53C BDW53D BDW54 BDW54A BDW54B BDW54C BDW54D BDW55
STMicroelectronics
Original
MJ2955 BUL128 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025

DK53

Abstract: dk52 BDW52B BDW52C BDW53 BDW53A BDW53B BDW53C BDW53D BDW54 BDW54A BDW54B BDW54C BDW54D BDW55
STMicroelectronics
Original
BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD292 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173

B0411

Abstract: B0733 BDW51 BDW51A BDW51B B0W51C BDW52 BDW52A BDW52B BDW52C BDW53 BDW53A BDW53B BDW53C BDW53D BDW54 BDW54A
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OCR Scan
B0411 B0733 THD200F1 2N5415 REPLACEMENT TIP 2n3055 SGS-Thomson cross reference 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195

BUV48I

Abstract: BU808DXI BDW53D BDW54 BDW54A BDW54B BDW54C BDW54D BDW55 BDW57 BDW58 BDW63 BDW63A BDW63B BDW63C BDW63D
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Original
BUV48I BU808DXI buv18a BD241CFI transistor 2SA1046 BUW52I 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233

JE350

Abstract: je180 BDW52B BDW52C BDW53 BDW53A BDW53B BDW53C BDW53D BDW54 BDW54A BDW54B BDW54C BDW54D BDW55
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OCR Scan
BD325 JE182 JE350 je180 MJ13004 TP33C JE172 BD135 BD136 BD137 BD138 BD139 BD140
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