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BDW53A Datasheet

Part Manufacturer Description PDF Type
BDW53A Bourns NPN SILICON POWER DARLINGTONS Original
BDW53A Power Innovations NPN SILICON POWER DARLINGTON Original
BDW53A Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDW53A N/A Semiconductor Master Cross Reference Guide Scan
BDW53A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDW53A N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDW53A N/A Shortform Transistor PDF Datasheet Scan
BDW53A-S Bourns NPN DARLINGTON 60V 4A Original

BDW53A

Catalog Datasheet MFG & Type PDF Document Tags

BDW53c

Abstract: BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS ● Designed for , °C case temperature (unless otherwise noted) RATING SYMBOL BDW53A Collector-base voltage (IE = 0) E T E L O S B O BDW53B VALUE V CBO 60 80 BDW53C BDW53D 120 45 BDW53A , are subject to change without notice. 1 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER , TEST CONDITIONS MIN BDW53 Collector-emitter BDW53A breakdown voltage IB = 0 (see
Bourns
Original
BDW54 BDW54A BDW54B BDW54C BDW54D TCS110AB
Abstract: BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS ● Designed for , BDW53C BDW53D 120 45 60 BDW53A BDW53B V CEO 80 V 100 BDW53C 120 BDW53D , BDW53A Collector-base voltage (IE = 0) VALUE 45 BDW53 VEBO 5 Continuous collector , are subject to change without notice. 1 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER , TEST CONDITIONS MIN BDW53 V(BR)CEO Collector-emitter BDW53A IC = 30 mA IB = 0 (see Bourns
Original
TCS110AC SAS110AC TIS110AB

BDW53

Abstract: BDW54 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Designed for , CBO 80 BDW53C 120 BDW53 V 100 BDW53D 45 60 BDW53A Collector-emitter voltage (IB = 0) (see Note 1) UNIT 60 BDW53A Collector-base voltage (IE = 0) VALUE 45 , 2002 Specifications are subject to change without notice. 1 BDW53, BDW53A, BDW53B, BDW53C , otherwise noted) PARAMETER TEST CONDITIONS MIN BDW53 V(BR)CEO Collector-emitter BDW53A IC
Bourns
Original
Abstract: BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Copyright© 1997, Power , temperature (unless otherwise noted) RATING BDW53 BDW53A Collector-base voltage (lE = 0) BDW53B BDW53C BDW53D BDW53 BDW53A Collector-emitter voltage (lB = 0) (see Note 1) BDW53B BDW53C BDW53D Emitter-base , not necessarily include testing of all parameters. BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN , voltage BDW53A Iq = 30 mA lB = 0 (see Note 5) BDW53B BDW53C BDW53D II Il I I II II II II II LU L U L U L U -
OCR Scan
T0-220

BDW54

Abstract: BDW53 BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power , BDW53C BDW53D V 100 120 BDW53 45 BDW53A Collector-emitter voltage (IB = 0) (see Note 1) UNIT 45 BDW53A Collector-base voltage (IE = 0) VALUE BDW53B 60 VCEO BDW53C 80 , processing does not necessarily include testing of all parameters. 1 BDW53, BDW53A, BDW53B, BDW53C , Collector-emitter BDW53A IC = 30 mA IB = 0 (see Note 5) breakdown voltage MAX 80 BDW53C 100
Power Innovations
Original

BDW53

Abstract: BDW53A BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Designed for , CBO 80 BDW53C 120 BDW53 V 100 BDW53D 45 60 BDW53A Collector-emitter voltage (IB = 0) (see Note 1) UNIT 60 BDW53A Collector-base voltage (IE = 0) VALUE 45 , 2002 Specifications are subject to change without notice. 1 BDW53, BDW53A, BDW53B, BDW53C , otherwise noted) PARAMETER TEST CONDITIONS MIN BDW53 V(BR)CEO Collector-emitter BDW53A IC
Bourns
Original

BOW53D

Abstract: 538 NPN transistor BDW53, BDW53A, BDW53B, BDW53C, BDW53D NPN SILICON POWER DARLINGTONS Copyrffiit© 1997, Power , BDW53 BDW53A VALUE 45 v ceo 60 80 100 120 45 60 VCEO 80 100 120 V6BO 5 4 SO 40 2 25 -6510+1 SO -65 t o +150 -65 to +150 V A mA W W mJ D C °C °C V V UNIT BDW 538 BDW 53C 8DW 53D BDW53 BDW53A Pin 2 is in , not necessarily indude testing of ail parameters. INNOVATIONS » 3-51 BDW53, BDW53A, BDW53B , BOW 53B BDW 53C BOW53D BOW 53 BDW 53A BDW 53B BDW 53C BDW53D BDW53 BDW53A BDW 53B BDW 53C V 0.5
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OCR Scan
538 NPN transistor lb 53b

T0220

Abstract: 37E D SEMELAB LT» â  0 13310? 0000045 5 â  SMLB T'3 3-0/ - Type No. Reliability Polarity Option BDW51A BDW51B BDW51C BDW52 BDW52A HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN PNP PNP BDW52B BDW52C BDW53 BDW53A BDW53B HI-REL HI-REL PNP PNP NPN NPN NPN P ackage Vc e o * * * * * * â'¢ c hF E ( cont Vce /c I PD T03 T03 T03 T03 T03 60 30 100 45 60 15 15 15 15 15 20-150 20-150 20-150 20-150
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OCR Scan
T0220 BDW63 BDW64 BDW73 BDW73A BDW73B

BOW54A

Abstract: BDW540 BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARUNGTONS Copyright C 1997, Power Innovations Limited, UK _ AUGUST 1978-REVISED MARCH 1997 · Designed (or Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDWS30 40 W at 25°C Case Temperature B C TO-220 PACKAGE (T O P V *W ) · · 4 A Continuous Collector Current C C E C · Minimum hFE of 750 at 3 V, 1.S A Pin 2 is in electrical contact with the mounting base, MDTRACA absolute maximum ratings at 25°C case
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OCR Scan
BOW54A BDW540 BOW54B 8DW54C

BDW54

Abstract: BDW53 BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDW53D 40 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 3V, 1.5 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW54B V
Bourns
Original
Abstract: BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDW53D ● 40 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 1.5 A TO-220 PACKAGE (TOP VIEW) B This series is currently available, but not recommended for new designs. 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum Bourns
Original
TCS115AB TCS115AC SAS115AC
Abstract: BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDW53D ● 40 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 1.5 A TO-220 PACKAGE (TOP VIEW) B This series is obsolete and not recommended for new designs. 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25 Bourns
Original

BDW53C

Abstract: BDW54 TBANSYS ELECTRONICS ^^ LIMITED BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS â'¢ Designed for Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDW53D â'¢ 40 W at 25°C Case Temperature â'¢ 4 A Continuous Collector Current â'¢ Minimum hFE of 750 at 3 V, 1.5 A TO-22C) PACKAGE (TOP VIEW) B C C C E C o Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDW54 -45
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OCR Scan
BDW54B-

BDW54

Abstract: BDW53 BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDW53D 40 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 3V, 1.5 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW54B V
Bourns
Original

BDW54

Abstract: BDW54C BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK q AUGUST 1978 - REVISED MARCH 1997 Designed for Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDW53D q 40 W at 25°C Case Temperature q 4 A Continuous Collector Current q Minimum hFE of 750 at 3 V, 1.5 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at
Power Innovations
Original
Abstract: BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations Limited, UK AUG UST 1978 - REVISED MARCH 1997 · Designed for Complementary Use with BDW53, BDW53A, BDW53B, BDW53C and BDW53D 40 W at 25°C Case Temperature B C T0-220 PACKAGE (TOP VIEW) · · · 4 A Continuous Collector Current Minimum hFE of 750 at 3 V, 1.5 A C C Pin 2 is in electrical contact with the m ounting base. MDTRACA absolute maximum ratings at 25°C case temperature -
OCR Scan
DW54D

DK53

Abstract: dk52 BDW52B BDW52C BDW53 BDW53A BDW53B BDW53C BDW53D BDW54 BDW54A BDW54B BDW54C BDW54D BDW55
STMicroelectronics
Original
MJ2955 BUL128 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025

DK53

Abstract: dk52 BDW52B BDW52C BDW53 BDW53A BDW53B BDW53C BDW53D BDW54 BDW54A BDW54B BDW54C BDW54D BDW55
STMicroelectronics
Original
BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD292 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173

B0411

Abstract: B0733 BDW51 BDW51A BDW51B B0W51C BDW52 BDW52A BDW52B BDW52C BDW53 BDW53A BDW53B BDW53C BDW53D BDW54 BDW54A
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OCR Scan
B0411 B0733 THD200F1 2N5415 REPLACEMENT TIP 2n3055 SGS-Thomson cross reference 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195

BUV48I

Abstract: BU808DXI BDW48 BDW51 BDW51A BDW51B BDW51C BDW52 BDW52A BDW52B BDW52C BDW53 BDW53A BDW53B BDW53C
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Original
BUV48I BU808DXI buv18a BD241CFI transistor 2SA1046 BUW52I 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233

JE350

Abstract: je180 BDW52B BDW52C BDW53 BDW53A BDW53B BDW53C BDW53D BDW54 BDW54A BDW54B BDW54C BDW54D BDW55
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OCR Scan
BD325 JE182 JE350 je180 MJ13004 TP33C JE172 BD135 BD136 BD137 BD138 BD139 BD140
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