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BDW52C Datasheet

Part Manufacturer Description PDF Type
BDW52C Central Semiconductor Leaded Power Transistor General Purpose Original
BDW52C Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=15 / Hfe=20-150 / fT(Hz)=3M / Pwr(W)=125 Original
BDW52C Central Semiconductor TO-3 Case Power Transistors Scan
BDW52C Crimson Semiconductor EPITAXIAL BASE Transistor Scan
BDW52C Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDW52C N/A Shortform Transistor PDF Datasheet Scan
BDW52C N/A Cross Reference Datasheet Scan
BDW52C N/A Diode, Transistor, Thyristor Datasheets and more Scan
BDW52C N/A Semiconductor Master Cross Reference Guide Scan
BDW52C N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDW52C N/A Shortform Transistor Datasheet Guide Scan
BDW52C N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDW52C SGS-Ates Shortform Data Book 1977/78 Scan
BDW52C STMicroelectronics Shortform Data Book 1988 Scan
BDW52C STMicroelectronics TRANSISTOR,BJT,NPN,60V V(BR)CEO,15A I(C),TO-3 Scan

BDW52C

Catalog Datasheet MFG & Type PDF Document Tags

DK53

Abstract: dk52 nearest preferred 2N5339 BDW52C BDW52C BDW52C BDW52C BDW52C BDW52C 2N3055 BUX98A BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C MJ2955 BSS44 BSS44 BDW51C , BDW51C BDW51C BDW51C BSS44 BSS44 2N3771 2N3772 BDW52C BDW52C BDW52C BDW52C BDW51C BDW51C , nearest preferred BFX34 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 BDW52C BDW52C BDW52C BDW51C , 2N5339 BUX10 BDW52C BDW52C 2N5884 MJ4502 BDW51C BSS44 Industry standard 2N5782 2N5783
STMicroelectronics
Original
BUL128 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025

DK53

Abstract: dk52 2N5339 BDW52C BDW52C BDW52C BDW52C BDW52C BDW52C 2N3055 BUX98 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C MJ2955 BSS44 BSS44 BDW51C BDW51C 2N3055 BDW51C , BDW51C BDW51C BDW51C BSS44 BSS44 2N3771 2N3772 BDW52C BDW52C BDW52C BDW52C BDW51C INDUSTY , BSS44 2N5884 2N5884 2N5339 BFX34 BFX34 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 BDW52C BDW52C BDW52C BDW51C BDW51C BDW51C 2N4920 2N4920 2N4920 BD235 BD235 BD237 2N5339 2N5339
STMicroelectronics
Original
BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD292 2N3026 2N3076 2N3171 2N3172 2N3173 2N3174

B0411

Abstract: B0733 BDW51C BDW51C BSS44 BSS44 2N3055 BUX98 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C BDW52C TIP2955 BDW52C BDW52C MJ2955 BSS44 BSS44 BDW51C BDW51C 2N3055 BDW51C BDW51C 8DW51C BUX10 2N5339 2N5339 2N5339 SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED 2N5339 BDW52C BDW52C BDW52C BDW52C BDW52C BDW52C 93 , SG&THOMSON PAGE REPLACEMBiT NEARESTPREFERRED 2N3772 BDW52C BDW52C BDW52C BDW52C BDW51C BDW51C BUV50 BSS44 , 2N5339 2N5339 BSS44 2N5884 2N5884 2N5339 BFX34 BFX34 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 MJ2955 BDW52C
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OCR Scan
B0411 B0733 THD200F1 2N5415 REPLACEMENT TIP 2n3055 SGS-Thomson cross reference 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196

BUV48I

Abstract: BU808DXI TIP2955 BSS44 BSS44 BDW52C BDW51C 2N3055 BDW51C BDW51C BDW51C BDW51C 2N5338 2N5338 2N5338 , 2N5680 2N5681 2N5682 MJ14003 2N5686 2N5339 2N5339 BUV20 BUX10 BDW52C BDW52C 2N5884 MJ4502 , 2N3716 2N3716 BDW52C BDW52C BDW52C BDW52C BDW51C BDW51C 2N5885 2N5884 2N5885 2N5886 BUX10 , 2N6124 TIP32B 2N6126 BUX10 TIP41B TIP41B TIP41B TIP42C TIP42C TIP42C MJE340 2N6490 BDW52C , TIP41B TIP41B TIP42C TIP42C TIP42C MJE340 2N6490 BDW52C TIP2955 TIP2955 BDW52C BUW34 MJ13335
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Original
BUV48I BU808DXI buv18a BD241CFI transistor 2SA1046 BUW52I 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235

BDW51C diagram

Abstract: BDW52C linear and switching applications. The complementary PNP is the BDW52C. INTERNAL SCHEMATIC DIAGRAM C , Ä 7# rZ 7 SGS-THOMSON BDW51C BDW52C SILICON NPN SWITCHING TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED , NPN PNP Value BDW51C BDW52C Unit Veso VcES VcEO V ebo lc ICM Ib Ptot Tstg T , negative. June 1997 1/2 169 BDW51C / BDW52C THERMAL DATA [ Rthj-case (Therm al R esistance
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BDW51C diagram

BDW52C

Abstract: BDW51C power linear and switching applications. The complementary PNP is the BDW52C. TO-3 INTERNAL , BDW51C BDW52C SILICON NPN SWITCHING TRANSISTORS s s s s s SGS-THOMSON PREFERRED , Max. Operating Junction Temperature Value BDW51C BDW52C 100 100 100 5 15 20 7 125 -65 to , negative. July 1997 1/4 BDW51C / BDW52C THERMAL DATA R thj-case Thermal Resistance , . 2/4 VCE = 4 V 20 5 3 150 MHz BDW51C / BDW52C TO-3 MECHANICAL DATA mm DIM
STMicroelectronics
Original
BDW51C schematics P003F

BDW52C

Abstract: BDW51C SavantIC Semiconductor Product Specification BDW52C Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type BDW51C ·Excellent safe operating area APPLICATIONS ·For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 , UNIT /W SavantIC Semiconductor Product Specification BDW52C Silicon PNP Power Transistors , tolerance:±0.1mm) 3 BDW52C -
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Original
Abstract: BDW52C. TO-3 INTERNAL SCHEMATIC DIAGRAM C o (TAB) ( 1) C o (TAB) (1 ) â'¬ ) â , r r 7 SGS-THOMSON Ã" 7 # RaoeifäoiiLiÃra©«! BDW51C BDW52C SILICON NPN SWITCHING TRANSISTORS . . . . . SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT , negative. July 1997 1/4 BDW51C / BDW52C THERMAL DATA Rthj-c T h e rm a l R e s is ta n c e , 20 5 3 V 150 MHz BDW51C / BDW52C TO-3 MECHANICAL DATA mm inch DIM. MIN. TYP -
OCR Scan

ot 409

Abstract: BDW52C applications. The complementary PNP is the BDW52C. TO-3 INTERNAL SCHEMATIC DIAGRAM C o (TAB) C o (TAB , et er NP N PNP V cB O Value BDW51C BDW52C Unit C ollector-B ase V oltage (Ie = 0) C o lle , * For PNP types voltage and current values are negative. April 1997 1/4 BDW51C/BDW52C , /BDW52C TO-3 MECHA NIC AL DATA mm DIM. MIN. T YP. MAX. MI N. i nch T YP. MAX. A B C D E G N P , m o e s f Z 7 SGS-mOMSON 3/4 BDW51C/BDW52C Inlormalionturnished is believed to be
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ot 409 PA 1515 transistor w52c transistor 1547 b BDW51C/BDW52C

BDW52

Abstract: BDW51 linear and switching applications. The complementary PNP types are the BDW52, BDW52A, BDW52B and BDW52C , BDW52B BDW51C BDW52C VcBO Collector-base Voltage (lE =0) 45 60 80 100 V VcES Collector-emitter Voltage , ," BDW52B, BDW52C). K>' VfcE (*> DC Current Gain (PNP types). hFE| DC Transconductance (PNP types
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BDW51 BDW51A BDW51B 66s6 BDW51/A/B/C BDW52/A/B/C BDW51/A/B/C-52/A/B/C
Abstract: complementary PNP types are the BDW52, BDW52A, BDW52B and BDW52C respectively. INTERNAL SCHEMATIC DIAGRAMS , BDW51B, BDW51C, BDW52B, BDW52C). DC Current Gain (NPN types). DC Current Gain (PNP types). hFEÃ -
OCR Scan
T-33-13 BDW51/A/B/C-52/A/B

BDW52

Abstract: BDW51 Power Ttanslstors TO-3 Case (Continued) o (Is-â'"a TYPE NO. â'¢c Pd bvcbo bvceo hFE TYP eie VCE(SAT) @'C *r "TYP (A)
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2N6674 2N6675 BDX85 BDX86C BU208 BUW35 BUW46 BDX86 BDX86A BDX85B

BDW52C

Abstract: BDW52C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 15A 7.92 (0.312) 12.70 (0.50) All Semelab
Semelab
Original

BDW52C

Abstract: BDW52C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can
Semelab
Original
Abstract: BDW52C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can Semelab
Original

BDW51C

Abstract: BDW52C SavantIC Semiconductor Product Specification BDW51C Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type BDW52C ·Excellent safe operating area APPLICATIONS ·For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base
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Original

bux11

Abstract: BUW36 BDW52B BDW52C BDX88 BDX86A BOX86S BDX86C BDX88 B0X88A BDXB8B BDX88C ^ 15 15 15 15 5.0 5.0 5.0 5.0
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BUW36 bux11 BDX85C B0X87 BDX87A BDX87C BDY90 BDY91

BDW52

Abstract: BDY90 Power itanslstors TO-3 Case (Continued) type no. â'¢c Pd bvcbo bvceo hfe typ @«c vce(sat) @>c h typ (a)
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BDY92 BUY69A haba BU208A BUW44 BUW45 BUX43 BUX44

T0220

Abstract: 37E D SEMELAB LT» â  0 13310? 0000045 5 â  SMLB T'3 3-0/ - Type No. Reliability Polarity Option BDW51A BDW51B BDW51C BDW52 BDW52A HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN PNP PNP BDW52B BDW52C BDW53 BDW53A BDW53B HI-REL HI-REL PNP PNP NPN NPN NPN P ackage Vc e o * * * * * * â'¢ c hF E ( cont Vce /c I PD T03 T03 T03 T03 T03 60 30 100 45 60 15 15 15 15 15 20-150 20-150 20-150 20-150
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OCR Scan
T0220 BDW53C BDW54 BDW54A BDW54B BDW54C

BDW51C

Abstract: BDW52C Inchange Semiconductor Product Specification BDW51C Silicon NPN Power Transistors DESCRIPTION With TO-3 package Complement to type BDW52C Excellent safe operating area APPLICATIONS For use in power linear and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol TOR UC Absolute maximum ratings(Ta=) SYMBOL PARAMETER OND IC VALUE UNIT 100 V 100
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Original

JE350

Abstract: je180 applications. The complementary PNP is the BDW52C. TO-3 INTERNAL SCHEMATIC DIAGRAM C o (TAB) C o (TAB , et er NP N PNP V cB O Value BDW51C BDW52C Unit C ollector-B ase V oltage (Ie = 0) C o lle , * For PNP types voltage and current values are negative. April 1997 1/4 BDW51C/BDW52C , /BDW52C TO-3 MECHA NIC AL DATA mm DIM. MIN. T YP. MAX. MI N. i nch T YP. MAX. A B C D E G N P , m o e s f Z 7 SGS-mOMSON 3/4 BDW51C/BDW52C Inlormalionturnished is believed to be
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BD325 JE182 JE350 je180 MJ13004 TP33C JE172 BD135 BD136 BD137 BD138 BD139 BD140

bdw 51 52

Abstract: bdw52 complementary PNP types are the BDW52, BDW52A, BDW52B and BDW52C respectively. INTERNAL SCHEMATIC DIAGRAMS , BDW51B, BDW51C, BDW52B, BDW52C). DC Current Gain (NPN types). DC Current Gain (PNP types). hFEÃ
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bdw 51 52 BDW 66 C bdw 52 G-46SZ
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