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BDW 65 C

Catalog Datasheet MFG & Type PDF Document Tags

diode AE 84A

Abstract: BOW84C BDW 04D BDW84 BDW84A BDW 84B BDW 84C BDW84D BDW84 BDW84A BDW 84B BDW 84C Tc = 150'C Tc = 150*C Tc = 150SC Tc = t50*C Tc = 1 50CC BDW 84D BDW84 BOW84A BDW84B BDW 84C BDW 84D MIN -45 -60 -60 -100 *120 -1 -1 , Innovations Limited, UK A U G U ST 1978 R E V IS E D M A R C H 1997 · Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25°C Case Temperature 15 A Continuous Collector , corrtact with the mounting t absolute maximum ratings at 25°C case temperature (unless otherwise noted
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BOW84C diode AE 84A BOW84 BDW 65 C TRANSISTOR Bdw84d BDW84C TCS145AH

BOW53D

Abstract: 538 NPN transistor BDW53 BDW53A VALUE 45 v ceo 60 80 100 120 45 60 VCEO 80 100 120 V6BO 5 4 SO 40 2 25 -6510+1 SO -65 t o +150 -65 to +150 V A mA W W mJ D C °C °C V V UNIT BDW 538 BDW 53C 8DW 53D BDW53 BDW53A Pin 2 is in , innovations limited, UK AU G U ST 1978 - R E V IS E D M A R C H 1997 Designed for Complementary U se with BDW54, BDW54A, BDW54B, BDW 54C and B D W 540 40 W at 2S°C C ase Temperature b TO-220 P ACKAG E (TOP , - BDW53D B0W 53 BDW 53A B0W 53B BDW 53C BDW53D " o 'e - o is " o * 150°C 120 V 5V 3V 3V 3V 30 mA
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BOW53D 538 NPN transistor lb 53b BDW53B BDW53C

tip 220

Abstract: BDW 65 C 4 180 180 10 TO 39 BDW 91 BDW 92 1000 2 5 2 2 4 5 60 60 65 SOT 82(1) SGS 120 SGS 125 1000 3 3 2 3 12 5 60 60 65 TO 220 TIP 120 TIP 125 1000 3 3 2 3 12 5 80 80 65 SOT 82(1) SGS 121 SGS 126 1000 3 3 , 1000 3 3 2 3 12 5 100 100 65 TO 220 TIP 122 TIP 127 1000 3 3 2 3 12 6 45 45 50 TO 220 BDW 23 BDW 24 , 750 3 3 2 3 12 6 100 100 50 TO 220 BDW 23 C BDW 24 C 750 2 3 2 2 8 6 100 100 60 SOT 82(1) BD 335 BD , '" 180 V 'c VcBO VCEO ptot Package Type "FE î le ' VCE vCEsat ® le 1 >B NPN PNP
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BDX53 tip 220 TIP 122 127 tip 130 TIP 122 tip 127 803 SGS BDX54S

bdx340

Abstract: bdw 34 a 8 100 100 60 TO 220 BDX 53 C BDX 54 C 750 3 3 2 3 12 8 100 100 65 SOT 82(1) SGS 132 SGS 137 1000 4 , 125 SOT 93 BDV 65 A BDV 64 A 1000 5 4 2 5 20 12 100 100 40 ISOWATT 220 BDW 93 CFI BDW 94 CFI 750 5 3 2 5 20 12 100 100 80 TO 220 BDW 93 C BDW 94 C 750 5 3 2 5 20 12 100 100 120 TO 3 BDX 87 C BDX 88 C , DARLINGTONS (Continued) 'c vCBO vCEO Ptot Package Type hFE le ' VCE vCEsat ® lc ' >B NPN PNP , 80 80 60 TO 220 BDX 53 El BDX 54 B 750 3 3 2 3 12 8 80 80 65 SOT 82(1) SGS 131 SGS 136 1000 4 4 2 4
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BDW93 BDV65 2N6284 bdx340 bdw 34 a mj 1001

Bow94c

Abstract: MJE 131 TIP 106 1000 3 4 2 3 16 8 100 100 60 TO 220 BDX 53 C BDX 54 C 750 3 3 2 3 12 8 100 100 65 SOT 82(1 , BDW 93 C BDW 94 C 750 5 3 2 5 20 12 160 140 80 TO 220 SGSD 93E 1000 3 3 2 10 20 12 180 160 80 TO , BDW 91 BDW 92 1000 2 5 2 2 4 5 60 60 65 SOT 82(1) SGS 120 SGS 125 1000 3 3 2 3 12 5 60 60 65 TO 220 , 65 TO 220 TIP 122 TIP 127 1000 3 3 2 3 12 6 45 45 50 TO 220 BDW 23 BDW 24 750 2 3 2 2 8 6 60 60 50 , 50 TO 220 BDW 23 C BDW 24 C 750 2 3 2 2 8 6 100 100 60 SOT 82(1) BD 335 BD 336 750 3 3 2 3 12 6 140
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Bow94c MJE 131 BD 147 SGSD93G sgs mosfet b0333

bdx340

Abstract: Bow94c TIP 106 1000 3 4 2 3 16 8 100 100 60 TO 220 BDX 53 C BDX 54 C 750 3 3 2 3 12 8 100 100 65 SOT 82(1 , BDW 93 C BDW 94 C 750 5 3 2 5 20 12 160 140 80 TO 220 SGSD 93E 1000 3 3 2 10 20 12 180 160 80 TO , 60 TO 220 BDX 53 C BDX 54 C 750 3 3 2 3 12 8 100 100 65 SOT 82(1) SGS 132 SGS 137 1000 4 4 2 4 16 8 , BDV 65 A BDV 64 A 1000 5 4 2 5 20 12 100 100 40 ISOWATT 220 BDW 93 CFI BDW 94 CFI 750 5 3 2 5 20 12 100 100 80 TO 220 BDW 93 C BDW 94 C 750 5 3 2 5 20 12 100 100 120 TO 3 BDX 87 C BDX 88 C 1000 5 3 2 6
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b0334 Bow93c bdw 34 BUZ10 d 6283 ic sgsd100

BDW 16.24K5000-C2-5

Abstract: % 480 1857 G-04 ! hFE group BD W 25 BDY 12 BDY 13 C D m BDW 25 BDY 12, BDY 13 , S I E M E N S A K T I E N G E S E L L S C H A F - ~ T - 3 3 - Q C f â'™ BDW 25 â'" 13 , -C < ? D SIEMENS A K T I E N G E S E L L S C H A F - â'" BDW 25 BDY 12 BDY 13 , 2SC D â  flSBSbQS DQQMMBB T H S I E 6 ot* NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are
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BDW 16.24K5000-C2-5 Q62702-D378 Q62702-D378-V4 Q62702-D378-V2 Q62702-D378-V1 Q60204-Y12 Q60204-Y12-B

BDW 65 C

Abstract: BDW93C Current 0.2 A P t ot Total Dissipation at T c 25 C T stg Storage Temperature Tj o Max. O perating Junction Temperature 80 W -65 to 150 o C 150 o C For PNP , e = 150 o C for BDW 93B/94B for BDW 93C/94C V CB = 80 V V CB = 100 V 100 100 µA µA , = 0) Max. I C = 100 mA for BDW93B/94B for BDW 93C/94C 80 100 V V V CE(sat , Parameter Value Uni t NPN BDW 93B BDW 93C PNP BDW 94B BDW 94C V CBO
STMicroelectronics
Original
BDW93B BDW93C BDW94B BDW94C 94B DIODE bdw93c applications BDW93B/BDW93C BDW94B/BDW94C

W93B

Abstract: darlington bd < 25 °C Storage Temperature Junction Temperature NPN PNP* B D W 93 BDW 93A BDW 93B BD W 93C Unit B DW , 100 V V A A A W °C °C 15 0 .2 80 - 65 to 150 150 For PNP types voltage and current , r Z 7 SGS-THOMSON " 7# BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BD W 93Band BDW 93C are silicon epitaxial-base NPN transistors in monolithic Darlington , switching applications. The com plementary PNP types are the BDW94, BDW94A, BDW94B and BDW 94C respectively
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W93B darlington bd W9394 BDW93/A/B/C BDW94/A/B/C 93B/94

3055t

Abstract: bdw 51 52 15 3 4 1.5 6 600 6 100 100 65 TO 220 BD 243 C BD 244 C 15 3 4 1.5 6 1000 6 100 100 65 TO 220 TIP 41 , BD 912 15 5 4 1 5 500 15 100 100 125 TO 3 BDW 51 C BDW 52 C 20 5 4 1 5 500 16 100 100 200 TO 3 2N , TRANSISTORS (Continued) 'c vCBO VCEO ptot Package Type MDM DMD hFE « à ic ' VCE vCEsat @ Ic 1 â B , 1 4 1.2 3 600 3 100 100 40 TO 220 TIP 31 C TIP 32 C 25 1 4 1.2 3 375 3 115 100 40 TO 220 BD 241 C BD 242 C 25 1 4 1.2 3 600 4 22 22 36 TO 126 BD 433 BD 434 50 2 1 0.5 2 200 4 32 32 36 TO 126 BD 435
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2N5190 2N5191 2N5192 2N5195 3055t bdw 51 52 SGS TIP 32 mj 3055 npn bd 3055 TIP 3771 2N6121 2N6123

bdw 51 52

Abstract: bdw52 r Z 7 S G S -T H O M S O N ^7# BDW51/A/B/C BDW52/A/B/C POWER LINEAR AND SWITCHING APPLICATIONS D E S C R IP T IO N The BDW 51, BDW51A, BDW51B and BDW 51C are silicon epitaxial-base NPN power , BDW 52B BDW 52C 60 60 60 5 15 20 7 U nit V V V V A A A W °C °C VcBO V cE S 80 80 80 100 100 100 < V ebo lc I CM Ib P to t T st g O o m £ 25 °C 125 - 65 to 200 200 , . The complem entary PNP types are the BDW52, BDW52A, BDW 52B and BDW 52C respectively. IN T E R N A
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BDW 66 C bdw 52 BDW51/A/B/C BDW52/A/B/C BDW51 BDW51C BDW52B BDW52C

Bow94c

Abstract: MTP3055A TIP 106 1000 3 4 2 3 16 8 100 100 60 TO 220 BDX 53 C BDX 54 C 750 3 3 2 3 12 8 100 100 65 SOT 82(1 , BDW 93 C BDW 94 C 750 5 3 2 5 20 12 160 140 80 TO 220 SGSD 93E 1000 3 3 2 10 20 12 180 160 80 TO , DARLINGTONS 'c vCBO VCEO p»ot Package Type hFE 3) (c ill £ vCEsat , 5 60 60 65 SOT 82(1) SGS 120 SGS 125 1000 3 3 2 3 12 5 80 80 65 SOT 82(1) SGS 121 SGS 126 1000 3 3 2 3 12 5 100 100 65 SOT 82(1) SGS 122 SGS 127 1000 3 3 2 3 12 6 60 60 60 SOT 82 (1) BD 331 BB 332
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SGSP222 BUZ10A BUZ71 BUZ11 SGSP492 STVHD90 MTP3055A IRFZ22 mosfet SGS137 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI

BE 64A

Abstract: BDw 32 ^tot ^tot i/ 2LIc 2 -5 -6 -0.1 60 2 50 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C , BDW64 Collector-em itter '(B R )C E O MIN -45 -60 -80 TYP MAX UNIT BDW 64A -30 mA lR = , BDW64C BDW64D BDW64 BDW 64A BDW64B BDW64C BDW64D T c = 150°C T c = 150°C T c = 150°C T c = 150°C T c = 150°C BDW64 BDW 64A BDW64B BDW64C BDW64D II II o o LU LU C ollector-em itter cut-off , BDW64, BDW64A, BDW64B, BDW64C, BDW64D PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power
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BE 64A BDw 32 BDW 64 BDW63 BDW63A BDW63B BDW63C BDW63D T0-220

BDW84C

Abstract: BDW84D BDW84B BDW84C BDW84D T c = 150°C T c = 150°C T c = 150°C T c = 150°C T c = 150°C BDW84 BDW 84A BDW84B , BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , , BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25°C Case Temperature 15 A Continuous Collector Current , with the m ounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW84 BDW 84A Collector-base voltage ( lE = 0) BDW84B BDW84C BDW84D BDW84 BDW 84A Collector-em
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DW84D

ED 83A

Abstract: BDW83B O O O O > > > > CÛ CÛ CÛ CÛ < O C D current BDW83 BDW 83A BDW83B BDW83C BDW83D Il , BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , , BDW84A, BDW84B, BDW84C and BDW84D 150 W at 25°C Case Temperature 15 A Continuous Collector Current , with the m ounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDW83 BDW 83A Collector-base voltage ( lE = 0) BDW83B BDW83C BDW83D BDW83 BDW 83A Collector-em
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ED 83A

BDY13

Abstract: bdy12 12, BDY 13 10* DC current gain /ife =' (/c) Vcs = 1V; Teas, = parameter BDW 25-6, BDY 12-6, BDY , parameter BDW 25-10, BDY 12-10. BDY 13-10 DC current gain hfe = f (/c) Vce = 1V; Taâ'ž = parameter BDY , /c = t (Ife) /g = parameter (common emitter configuration) mA BDY12 200 BDW 25 BDY 12 BDY 13 , ESC D â  flSBSbQS 0004433 T HSIEG NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT
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BDY13 BDV13 bdy 12 Q60204-Y12-C Q60204-Y12-D Q60204-Y13 Q60204-Y13-B Q60204-Y13-C Q60204-Y13-D

BDW 65 C

Abstract: BDW25 (Tu = 25°C) Der Transistor BDW 25 wird bei Ic = 1 A und UCE = 1 V nach der statischen , : Typ BDW 25 BDW 25 fl-Gruppe 4 6 10 UCE /c B B B ^BE (V) (A) Ic/h Idh Idh (V) 1 0,01 _ , NPN-Silizium-Leistungstransistor für hochwertige BDW 25 NF-Endstufen und Schalteranwendungen , Spitzenstrom1) IBM 1 A Sperrschichttemperatur Tj 175 °C Lagertemperatur ' S -65 bis +175 °C Gesamtverlustleistung (7"G = 45°C; UCE < 13 V) Ptot 26 W Wärmewiderstand Kollektorsperrschicht - Transistorgehäuse
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BDW25 MS265

Bow94c

Abstract: Bow93c TIP 106 1000 3 4 2 3 16 8 100 100 60 TO 220 BDX 53 C BDX 54 C 750 3 3 2 3 12 8 100 100 65 SOT 82(1 , BDW 93 C BDW 94 C 750 5 3 2 5 20 12 160 140 80 TO 220 SGSD 93E 1000 3 3 2 10 20 12 180 160 80 TO , DARLINGTONS 'c vCBO VCEO p»ot Package Type hFE 3) (c ill £ vCEsat , 5 60 60 65 SOT 82(1) SGS 120 SGS 125 1000 3 3 2 3 12 5 80 80 65 SOT 82(1) SGS 121 SGS 126 1000 3 3 2 3 12 5 100 100 65 SOT 82(1) SGS 122 SGS 127 1000 3 3 2 3 12 6 60 60 60 SOT 82 (1) BD 331 BB 332
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SGS transistors box 53c IC SGS6388 BO 336 BOW93B bipolar transistors SGS 2N6286 MJ11013 IRFP153 IRFP151 BUZ11S2 MTH40N06

ksd 302 250v, 10a

Abstract: irf 5630 65/45 80/60 80/60 60/25 32/30 60/45 3.00 6.00 ($45°C) 3.00 6.00 ($45°C) 3.00 6.00 ($45°C) 15.00 , . In der Regel gelten diese Werte bei 25°C wenn nicht anders vermerkt wurde. â'c Bei Transistoren , apply at 25°C, unless otherwise indicated. "c With transistors, the usal situation is for UC 0 , inferieure (> = min.) garantie. En regie g6nerale ces valeurs sont valables a une temperature de 25°C, sauf , quelli superiori (< = max.) o inferiori (> = min.) garantiti. Di regola, i valori si riferiscono a 25° C
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ksd 302 250v, 10a irf 5630 transistor 2SB 367 bf199 IRF 3055 transistor ESM 2878 ZTX751 ZTX3866 2SD2182 2SD1642 2SC4489
Abstract: -50 40 2 25 -65 to +150 -65 to +150 -65 to +150 UNIT V V V A mA W W mJ °C °C °C These , itter '(B R )C E O MIN -45 -60 -80 TYP MAX UNIT BDW 54A -30 mA lR = 0 (see Note 5 , BDW54 BDW 54A BDW54B BDW54C BDW54D T c = 150°C T c = 150°C T c = 150°C T c = 150°C T c = 150°C BDW54 BDW , BDW54, BDW54A, BDW54B, BDW54C, BDW54D PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , , BDW53A, BDW53B, BDW53C and BDW53D 40 W at 25°C Case Temperature B C T0-220 PACKAGE (TOP VIEW) · · -
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DW54D
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