BDV64/64A/64B/64C BDV65/65A/65B/65C BDV64 BDV64A BDV64B BDV64C -100V -120V - Datasheet Archive

 

Product Specification BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement

 

SavantIC Semiconductor Product Specification BDV64/64A/64B/64C BDV64/64A/64B/64C Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDV65/65A/65B/65C BDV65/65A/65B/65C ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in general purpose amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS BDV64 BDV64 VCBO Collector-base voltage BDV64A BDV64A VALUE -60 Open emitter -80 BDV64B BDV64B Collector-emitter voltage -120 BDV64 BDV64 -60 BDV64A BDV64A Open base -80 BDV64B BDV64B Emitter-base voltage V -100 BDV64C BDV64C VEBO V -100 BDV64C BDV64C VCEO UNIT -120 Open collector -5 V IC Collector current -12 A ICM Collector current-peak -15 A IB Base current -0.5 A PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 125 Ta=25 3.5 W SavantIC Semiconductor Product Specification BDV64/64A/64B/64C BDV64/64A/64B/64C Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BDV64 BDV64 V(BR)CEO Collector-emitter breakdown voltage MIN MAX UNIT -60 BDV64A BDV64A -80 IC=-30mA, IB=0 V BDV64B BDV64B -100 BDV64C BDV64C VCEsat TYP. -120 V Base-emitter on voltage IC=-5A ; VCE=-4V -2.5 V VCB=-60V, IE=0 VCB=-30V, IE=0;TC=150 -0.4 -2.0 BDV64A BDV64A VCB=-80V, IE=0 VCB=-40V, IE=0;TC=150 -0.4 -2.0 BDV64B BDV64B VCB=-100V -100V, IE=0 VCB=-50V, IE=0;TC=150 -0.4 -2.0 VCB=-120V -120V, IE=0 VCB=-60V, IE=0;TC=150 -0.4 -2.0 BDV64 BDV64 VCE=-30V, IB=0 BDV64A BDV64A VCE=-40V, IB=0 BDV64B BDV64B VCE=-50V, IB=0 BDV64C BDV64C ICEO -2.0 BDV64C BDV64C ICBO IC=-5A ,IB=-20mA BDV64 BDV64 VBE Collector-emitter saturation voltage VCE=-60V, IB=0 Collector cut-off current Collector cut-off current mA -2 Emitter cut-off current VEB=-5V; IC=0 hFE DC current gain IC=-5A ; VCE=-4V VEC Diode forward voltage -5 IE=-10A mA -3.5 IEBO mA V 1000 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.0 2 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BDV64/64A/64B/64C BDV64/64A/64B/64C PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.1mm) 3