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BDV64C Datasheet

Part Manufacturer Description PDF Type
BDV64C Bourns PNP SILICON POWER DARLINGTONS Original
BDV64C Motorola complementary power darlington transistor Original
BDV64C Power Innovations PNP SILICON POWER DARLINGTON Original
BDV64C Mospec Silicon Darlington Power Transistors Scan
BDV64C Motorola Motorola Semiconductor Data & Cross Reference Book Scan
BDV64C Motorola European Master Selection Guide 1986 Scan
BDV64C N/A Shortform Transistor PDF Datasheet Scan
BDV64C N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDV64C N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDV64C Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan
BDV64C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
BDV64C Transys Electronics Darlington Bipolar Transistor, PNP, 120V at Tc=25C, TO-218, 3-Pin Scan
BDV64CF Philips Semiconductors PNP Silicon Darlington Power Transistor Original
BDV64CF N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
BDV64CF N/A Shortform Data and Cross References (Misc Datasheets) Scan
BDV64C-S Bourns TRANS DARLINGTON PNP 120V 12A 3SOT-93 Original
BDV64C-S Bourns PNP DARLINGTON 120V 12A Original

BDV64C

Catalog Datasheet MFG & Type PDF Document Tags

BDV64B

Abstract: BDV64C BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , BDV64 Collector-base voltage (lE = 0) BDV64A 8DV64B BDV64C BDV64 CoRector-emitter voltage (iB = 0) BDV64A BDV64B BDV64C VCEO VC80 SY M BO L VALUE -60 -80 -100 -120 -60 -80 -100 -120 V EBO ·c >CM !b Ptot , not necessaruy irusuoe testing or ait parameters. fj BDV64, BDV64A, BDV64B, BDV64C PNP SILICON , (BR)CEO MIN -60 -80 -100 -120 BDV64A BDV64B BDV64C BDV64 BDV64A B0V64B BDV64C BDV64 BDV64A B0V64B
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BDV65 BDV65A BDV65B BDV65C

BDV64B

Abstract: Bdv64a BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , voltage ( lE = 0) BDV64A BDV64B BDV64C BDV64 Collector-em itter voltage ( lB = 0) BDV64A BDV64B BDV64C Em , not necessarily include testing of all parameters. BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER , BDV64C V > = = = = = = = = = = CÛ O > -30 V -40 V -50 V -60 V -60 V -80 V -100 V -120 V -30 V -40 V -50 V -60 V -5 V lB = 0 CD II o BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C Tc
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BDV64

Abstract: transistors BDV64B BDV64C -120 BDV64 -60 BDV64A VCEO Collector-emitter voltage -80 Open base V BDV64B Emitter-base voltage -100 BDV64C VEBO UNIT -60 BDV64A Collector-base voltage , -80 IC=-30mA, IB=0 V BDV64B -100 BDV64C VCEsat TYP. -120 IC=-5A ,IB=-20mA -2.0 , Collector cut-off current ICBO BDV64A BDV64B BDV64C ICEO VCE=-30V, IB=0 BDV64A VCE=-40V, IB=0 SEM E ANG CH IN BDV64B BDV64C mA -0.4 -2.0 -0.4 -2.0 TOR
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transistors BDV64B BDV64/64A/64B/64C BDV65/65A/65B/65C

BDV64

Abstract: BDV64A BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , ) BDV64B V CBO -80 -100 BDV64C V -120 BDV64 Collector-emitter voltage (IB = 0) UNIT -60 BDV64 BDV64A VALUE -60 BDV64A BDV64B VCEO -80 -100 V -120 BDV64C , BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , = -60 V -0.4 BDV64B -0.4 Collector cut-off VCB = -120 V IE = 0 BDV64C -0.4
Bourns
Original
TCS145AD TCS145AE TCS145AF TIS140AA

BDV64

Abstract: BDV64B BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , ) BDV64B V CBO -80 -100 BDV64C V -120 BDV64 Collector-emitter voltage (IB = 0) UNIT -60 BDV64 BDV64A VALUE -60 BDV64A BDV64B VCEO -80 -100 V -120 BDV64C , BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , = -60 V -0.4 BDV64B -0.4 Collector cut-off VCB = -120 V IE = 0 BDV64C -0.4
Bourns
Original
BDV65, BDV64

BDV64

Abstract: BDV65A BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , VCBO BDV64C Collector-emitter voltage (IB = 0) BDV64B UNIT -60 -80 -100 V -120 BDV64 BDV64A VALUE -60 VCEO BDV64C -80 -100 V -120 V EBO -5 V IC -12 , , BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 electrical , -2 IB = 0 BDV64C IE = 0 BDV64 -0.4 IE = 0 BDV64A -0.4 IE = 0 BDV64B
Power Innovations
Original

BDV64

Abstract: BDV64A G füAffSYS BDV64, BDV64A, BDV64B, BDV64C fUGTRONICS pNp SILICON POWER DARLINGTONS LIMITED â , = 0) BDV64 BDV64A BDV64B BDV64C VCBO -60 -80 -100 -120 V Collector-emitter voltage (lB = 0) BDV64 BDV64A BDV64B BDV64C VCEO -60 -80 -100 -120 V Emitter-base voltage VEBO -5 V Continuous collector , air temperature at the rate of 28 mW/°C. BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER , lB = 0 (see Note 4) BDV64A BDV64B BDV64C -80 -100 -120 V VCB = -30 V lB = 0 BDV64 -2 'ceo
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TIS140

Abstract: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary , 150°C free air temperature at the rate of 28 mW/°C. E T E L O S B O BDV64C BDV64A BDV64B VCEO BDV64C VEBO IC IB ICM Ptot Ptot Tj Tstg TL PRODUCT INFORMATION 1 JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDV64, BDV64A, BDV64B, BDV64C PNP SILICON , ) BDV64A BDV64B BDV64C VCB = -30 V ICEO Collector-emitter cut-off current VCB = -40 V VCB = -50 V VCB = -60
Bourns
Original
TIS140
Abstract: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary , Collector-base voltage (IE = 0) BDV64A BDV64B BDV64C BDV64 Collector-emitter voltage (IB = 0) BDV64A BDV64B BDV64C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous , SEPTEMBER 2002 Specifications are subject to change without notice. BDV64, BDV64A, BDV64B, BDV64C PNP , ) BDV64A BDV64B BDV64C VCB = -30 V ICEO Collector-emitter cut-off current VCB = -40 V VCB = -50 V VCB = -60 Bourns
Original

BDV64

Abstract: transistors BDV64B Collector-base voltage -80 Open emitter V BDV64B -100 BDV64C -120 BDV64 -60 BDV64A , BDV64C VEBO UNIT -60 BDV64A VCBO VALUE -120 Open collector -5 V IC , BDV64C BDV64 Collector cut-off current BDV64A -0.4 -2.0 mA -0.4 -2.0 VCE=-40V, IB=0 BDV64B -0.4 -2.0 VCE=-30V, IB=0 VCE=-50V, IB=0 BDV64C ICEO UNIT -80 IC=-30mA, IB=0 BDV64 ICBO MAX -60 BDV64C VCEsat TYP. VCE=-60V, IB=0 -2 Emitter cut-off current
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transistors BDV64B

Abstract: BDV64 V -100 BDV64C VEBO V -100 BDV64C VCEO UNIT -120 Open collector -5 V , MIN MAX UNIT -60 BDV64A -80 IC=-30mA, IB=0 V BDV64B -100 BDV64C VCEsat , -2.0 BDV64 VCE=-30V, IB=0 BDV64A VCE=-40V, IB=0 BDV64B VCE=-50V, IB=0 BDV64C ICEO -2.0 BDV64C ICBO IC=-5A ,IB=-20mA BDV64 VBE Collector-emitter saturation
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64b diode

BDV65, BDV64

Abstract: BOV65B MOTORCLA SC MOTOROLA XSTRS /R F 12E D | b3b7254 D 00` 47bc l 7 | T-33-tf T-33-U TECHNICAL DATA SEMICONDUCTOR BDV65 BDV65A BDV65B BDV6SC NPN BDV64 BDV64A BDV64B BDV64C PNP COMPLEMENTARY SILICON PLASTIC POWER DARLINGTONS . for use as output devices in complementary general purpose amplifier applications. · High DC Current Gain HFE = 1000 (min.) @ 5 Adc · Monolithic Construction with , b o l VCEO VcB Ve b ic B D V 65 B D V 64 B D V 6 5A BDV64A B D V 65B BDV64B B D V 65C BDV64C Unit
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BOV65B transistor npn 3-326 BDV65B-BOV64B BOV65 transistors BDV65c bdv64b transistor T-33- Y145M DV65B T-33-3 415A1 T-33T-29

KT972A

Abstract: BD876 PNP 50.0 60 80 100 NPN 60,0 330 BDV65A BDV65B BDV65C BDV64A BDV64B BDV64C BD875 NPN
INTEGRAL
Original
KT8115A KT8115B KT8116A KT8116B KT8214A KT8214B KT972A BD876 kt8156a KT973 KT973A KT973B KT8115 KT8116

T0220

Abstract: BDT62C SOT93 BDV64C 12 120 125 1000 SOT93 BDW94C 12 100 80 750 T0220 2SB1647 15 150 130 SOT93 BDW84C 15
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BC516 BCV26 MPSA64 BDX47 T0126 BSP61 BDT62C MJ2501 SOT93 MJ4032 T03 pnp T0-220 BD682

MN2488

Abstract: T0220 125 1000 T0220 BDV64C 120 12 125 1000 SOT93 BDW84D 120 15 150 750 SOT93 BDX66C 120 16 150 1000 T03
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BCV27 BD675A BD678 TIP125 BCV47 2SD1196-SAN MN2488 MJ11033-MOT 2SD2390 BD648

BUS47AP

Abstract: BUS48AP 125 125 120 BOV65C BDV64C 1k min 5 125 350 BU323P 150 min 6 15 15 6 125 400 BU323AP 150
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MJH16032 MJH16034 MJH16002 MJH16004 MJH16002A MJH16024 BUS47AP BUS48AP BUS47P BUT51P MJH16010A tip142

R3381

Abstract: R3498 BDV64C BDV64C-S BDV64-S BDV65 BDV65A BDV65A-S BDV65B BDV65B-S BDV65C BDV65C-S BDV65-S BDV66
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MP150SG BD250C-S BD251 BDW85 BDW85-S R3381 R3498 a101 transistor R3381-S buv49 BLBF40 MG15G-1040R MG15F-1040R E34947 BD245

philips BDV64A

Abstract: T1P121 10A BDV65 BDV65A BDV65B BDV65C BDV64 BDV64A BDV64B BDV64C SOT-93 12A 60V 80V 100V 120V 1000 at 5A 2V
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BDT63A philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

philips BDV64A

Abstract: BDX67 BDV65B BDV65C BDV64 BDV64A BDV64B BDV64C SOT-93 12A 60V 80V 100V 120V 1000 at 5A
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BDX67 53T31 BD679 BD681 BD684 BDT61 BDT61A
Abstract: TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS â'¢ Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C â'¢ 125 W at 25°C Case Temperature â'¢ 12 A Continuous Collector Current â'¢ Minimum hFE of 1000 at 4 V, 5 A SOT-9C PACKAGE (TO PVIEW) B C 1 C C y~~ *o O 3 b C Pin 2 is in electrical contact with the New Jersey Semiconductor
Original

bdx 330

Abstract: DARLINGTON ESM 749 MOTORCLA SC MOTOROLA XSTRS /R F 12E D | b3b7254 D 00` 47bc l 7 | T-33-tf T-33-U TECHNICAL DATA SEMICONDUCTOR BDV65 BDV65A BDV65B BDV6SC NPN BDV64 BDV64A BDV64B BDV64C PNP COMPLEMENTARY SILICON PLASTIC POWER DARLINGTONS . for use as output devices in complementary general purpose amplifier applications. · High DC Current Gain HFE = 1000 (min.) @ 5 Adc · Monolithic Construction with , b o l VCEO VcB Ve b ic B D V 65 B D V 64 B D V 6 5A BDV64A B D V 65B BDV64B B D V 65C BDV64C Unit
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BDV67 BUV74 BUV37 bdx 330 DARLINGTON ESM 749 box53a DARLINGTON ESM 30 800V PNP BUX 837 BDX33 BDX53 BDX54 BUV54

pnp 400v 10a

Abstract: box53a BDW74C BDW74D TIP135 TIP136 TIP137 BDX34B BDX34C BDX34D TIP147 BDV64C BDW94B BDW94C BDW84B , BDW74D TIP135 TIP136 TIP137 BDX34B BDX34C BDX34D TIP147 BDV64C BDW94B BDW94C BDW84B BDW84C
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pnp 400v 10a bdv 648 vceo 800V PNP bdx 66 bdx 67 BUX37 BDX33d

TIC106M SCR

Abstract: TIC106D equivalent 125 1000 T0220 BDV64C 120 12 125 1000 SOT93 BDW84D 120 15 150 750 SOT93 BDX66C 120 16 150 1000 T03
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TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP30C BD240C TIPP32C BD242B BD242C TIP32B
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